Untitled
Abstract: No abstract text available
Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 49mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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Abstract: No abstract text available
Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 110mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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800V 40A mosfet
Abstract: mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG
Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 55mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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APTMC60TLM55CT3AG
800V 40A mosfet
mosfet 1200V 40A
MOSFET 40A 600V
APTMC60TLM55CT3AG
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Untitled
Abstract: No abstract text available
Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 98mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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Abstract: No abstract text available
Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 20mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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Abstract: No abstract text available
Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 17mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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SiC POWER MOSFET
Abstract: sic MOSFET APTMC60TLM14CAG
Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
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APTMC60TLM14CAG
SiC POWER MOSFET
sic MOSFET
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MCH3408
Abstract: MCH5803 SBS006M
Text: Ordering number : ENN6958 MCH5803 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5803 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3408 and a Schottky Barrier Diode (SBS006M) 2195
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ENN6958
MCH5803
MCH3408)
SBS006M)
MCH5803]
MCH3408
MCH5803
SBS006M
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Untitled
Abstract: No abstract text available
Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
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Untitled
Abstract: No abstract text available
Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
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Text: Ordering number : ENN6899 CPH5802 CPH5802 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Package Dimensions unit : mm 2171 [CPH5802] 2.9 0.15 0.2 4 3 2.8 0.6 5 1.6 Composite type with a P-Channel Sillicon MOSFET
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ENN6899
CPH5802
CPH5802]
MCH3306)
SBS004)
CPH5802/D
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CPH5802
Abstract: MCH3306 SBS004
Text: Ordering number : ENN6899 CPH5802 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5802 DC / DC Converter Applications Package Dimensions unit : mm 2171 [CPH5802] 2.9 0.15 0.2 4 3 0.6 5 0.05 2.8 1.6 Composite type with a P-Channel Sillicon MOSFET
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ENN6899
CPH5802
CPH5802]
MCH3306)
SBS004)
CPH5802
MCH3306
SBS004
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FDPF51N25
Abstract: No abstract text available
Text: FDP51N25 / FDPF51N25 / FDPF51N25YDTU N-Channel UniFETTM MOSFET 250 V, 51 A, 60 mW Features Description • R DS on = 60 mW (Max.) @ VGS = 10 V, ID = 25.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDP51N25
FDPF51N25
FDPF51N25YDTU
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Application Note 91
Abstract: 81227 power BJT anti saturation diode IGBT gate driver ic optocoupler without base pin for mosfet driver IGBT EQUIVALENT BJT isolated Base Drive circuit mosfet igbt gate driver ic IGBT parallel DRIVE OSCILLATION optocoupler pnp
Text: VISHAY SEMICONDUCTORS www.vishay.com Optocouplers and Solid-State Relays Application Note 91 IGBT/MOSFET Gate Drive Optocoupler INTRODUCTION TO IGBT The Insulated Gate Bipolar transistor IGBT is a cross between a MOSFET (metal oxide semiconductor field effect
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24-Oct-11
Application Note 91
81227
power BJT anti saturation diode
IGBT gate driver ic
optocoupler without base pin for mosfet driver
IGBT EQUIVALENT
BJT isolated Base Drive circuit
mosfet igbt gate driver ic
IGBT parallel DRIVE OSCILLATION
optocoupler pnp
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FDFMA2P853
Abstract: No abstract text available
Text: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET
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diode ja
Abstract: No abstract text available
Text: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET
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Text: PRODUCT SPECFICATION PE4120DIE Ultra-High Linearity Broadband Quad MOSFET Array Product Description The PE4120 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range. This quad array operates with differential signals at all ports RF, LO,
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PE4120DIE
PE4120
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Untitled
Abstract: No abstract text available
Text: APTMC120AM08CD3AG Phase leg MOSFET Power Module VDSS = 1200V RDSon = 10mΩ max @ Tj = 25°C ID = 260A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET
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Text: tm FDS4935BZ Dual 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.
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Untitled
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Text: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET
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FDFMA2P853
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CPH5802
Abstract: No abstract text available
Text: Ordering number : ENN6899 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5802 DC / DC Converter Applications Package Dimensions Features • Composite type with a P-Channel Sillicon MOSFET M CH3306 and a Schottky Barrier Diode (SBS004)
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ENN6899
CPH5802
CH3306)
SBS004)
CPH5802]
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mosfet specification
Abstract: TA4180
Text: Fuji power MOSFET Specification 2 3 1. Scope This specifies Fuji power MOSFET 2. Outline I Construction H) Application DI) Outview 1 O 1 6 2 SK 1 0 1 6 N-channel enhancement mode power MOSFET for switching T0-3P 3. Absolute raaxiamia ratings at Tc=25 ’
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MT5F1306
MT5F1308JÂ
MT5F130S
MT5F1306
MT5F13QBfa
MT5F13061
MT5F1306^
MT5F130e^
F1308$
MT5F1306jS
mosfet specification
TA4180
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Untitled
Abstract: No abstract text available
Text: Ordering number :EN4885 No-4885 FX602 // N-Channel Silicon MOSFET SAHYO i Ultrahigh-Speed Switching Applications • H L _ I I _ _ F eatu res ■Composite type composed of two low ON-resistance N-channel MOSFET chips for ultrahigh-speed
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EN4885
No-4885
FX602
FX602
2SK2152,
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Untitled
Abstract: No abstract text available
Text: National February 1996 Semiconductor" NDS8852H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DM O S technology. This very high density process is especially tailored to
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NDS8852H
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