9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
|
Original
|
PDF
|
2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
|
Untitled
Abstract: No abstract text available
Text: FDH210N08 N-Channel UniFETTM MOSFET 75 V, 210 A, 5.5 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
|
Original
|
PDF
|
FDH210N08
|
mosfet SOA testing
Abstract: MOSFET testing linear mosfet MOSFET 1000 VOLTS
Text: POWER MOS PRODUCTS - Linear MOSFETs W E N HERMETIC LINEAR MOSFETs What is a Linear MOSFET? A MOSFET specifically designed to be more robust than a standard MOSFET when operated with concurrent high voltage and high current near DC conditions >100msecs . applications. This new Linear MOSFET
|
Original
|
PDF
|
100msecs)
APL1001P
APL501P
mosfet SOA testing
MOSFET testing
linear mosfet
MOSFET 1000 VOLTS
|
mosfet SPICE MODEL
Abstract: self-heating subckt pspice high frequency mosfet A SPICE II subcircuit representation for power MOSFETs using empirical methods ronan difference between orcad pspice parallel mosfet MOSFET S1A FDP038AN08A0 PSPICE Orcad
Text: Application Note 7533 October 2003 A Revised MOSFET Model With Dynamic Temperature Compensation Alain Laprade, Scott Pearson, Stan Benczkowski, Gary Dolny, Frank Wheatley Abstract An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macromodel implementation is the culmination of years of evolution in MOSFET
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Programmable Temperature Controlled MOSFET Driver ISL25700 Features The Temperature Controlled MOSFET Driver is a highly integrated solution that combines a MOSFET driver with overcurrent protection and two 8-bit resolution DACs on a monolithic CMOS integrated circuit IC .
|
Original
|
PDF
|
ISL25700
ISL25700
ISL2570
076mm
MO-255UABD
5M-1994.
FN6885
|
Untitled
Abstract: No abstract text available
Text: VNB35NV04-E VNP35NV04-E, VNV35NV04-E OMNIFET II fully autoprotected Power MOSFET Datasheet - production data • Direct access to the gate of the Power MOSFET analog driving • Compatible with standard Power MOSFET 10 Description 3 1 1 D2PAK PowerSO-10
|
Original
|
PDF
|
VNB35NV04-E
VNP35NV04-E,
VNV35NV04-E
PowerSO-10
VNB35NV04-E,
VNP35NV04-E
VNV35NV04-E
O-220
DocID023550
|
Untitled
Abstract: No abstract text available
Text: SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device
|
Original
|
PDF
|
SiP4282A
SC75-6
SiP4282A-3
18-Jul-08
|
MOSFET TOSHIBA 2SK
Abstract: transistor 2sk equivalent 2sk2698 mosfet equivalent 2sk2837 mosfet MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR MOSFET TOSHIBA 2Sj TO-3P package land pattern TPCS8201 toshiba lateral mos Transistor TOSHIBA 2SK
Text: [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail 1. Part Number Format transistors and accessories 1.1 Transistors (example) 2SK 2232 A 1st 2nd 3rd 1st group: transistor types are indicated as shown in the table immediately below.
|
Original
|
PDF
|
|
transistor 2sk
Abstract: MOSFET TOSHIBA 2Sj equivalent 2sk2698 mosfet MOSFET TOSHIBA 2SK HIGH POWER MOSFET TOSHIBA equivalent 2sk2837 mosfet TE161 2SK2615 2SK2698 2SK2837
Text: [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail 1. Part Number Format transistors and accessories 1.1 Transistors (example) 2SK 2232 A 1st 2nd 3rd 1st group: transistor types are indicated as shown in the table immediately below.
|
Original
|
PDF
|
|
MAX5048AAUT
Abstract: Low Power PWM controller 6-pin Power PWM controller 6-pin AKW SOT23 MAX5048BAUT-TG16 MAX5048BAUT-T
Text: 19-2419; Rev 4; 7/05 7.6A, 12ns, SOT23/TDFN, MOSFET Driver Features The MAX5048A/MAX5048B are high-speed MOSFET drivers capable of sinking/sourcing 7.6A/1.3A peak currents. These devices take logic input signals and drive a large external MOSFET. The MAX5048A/MAX5048B
|
Original
|
PDF
|
OT23/TDFN,
MAX5048A/MAX5048B
MAX5048AAUT
Low Power PWM controller 6-pin
Power PWM controller 6-pin
AKW SOT23
MAX5048BAUT-TG16
MAX5048BAUT-T
|
Untitled
Abstract: No abstract text available
Text: New Product SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device
|
Original
|
PDF
|
SiP4282A
SC75-6
SiP4282A-3
08-Apr-05
|
73851
Abstract: No abstract text available
Text: New Product SiP4282 Vishay Siliconix 1 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282 is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device
|
Original
|
PDF
|
SiP4282
SC75-6
SiP4282-3
08-Apr-05
73851
|
SC75
Abstract: SC-75 SiP4282A
Text: New Product SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device
|
Original
|
PDF
|
SiP4282A
SC75-6
SiP4282A-3
18-Jul-08
SC75
SC-75
|
73851
Abstract: SC75 SC-75 SiP4282 SiP4282-1-T1-E3 SiP4282-3-T1-E3 SiP4282DVP-1-T1-E3
Text: New Product SiP4282 Vishay Siliconix 1 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282 is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device
|
Original
|
PDF
|
SiP4282
SC75-6
SiP4282-3
18-Jul-08
73851
SC75
SC-75
SiP4282-1-T1-E3
SiP4282-3-T1-E3
SiP4282DVP-1-T1-E3
|
|
|
Untitled
Abstract: No abstract text available
Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 ABFP D G D S G S Features MOSFET
|
Original
|
PDF
|
10N60C5M
O-220
|
SOT23-6 MARKING 310
Abstract: AAT4280IGU-1-T1 AAT4280IGu AAT4250 AAT4280 AAT4280-1 AAT4280-2 AAT4280-3 SC70JW-8 aat4280ijs-3-t1
Text: AAT4280 Slew Rate Controlled Load Switch General Description Features The AAT4280 SmartSwitch is a member of AATI's Application Specific Power MOSFET™ ASPM™ product family. The AAT4280 is a P-channel MOSFET power switch designed for high-side loadswitching applications. The P-channel MOSFET
|
Original
|
PDF
|
AAT4280
AAT4280
AAT4250
SC70JW-8
048REF
SOT23-6 MARKING 310
AAT4280IGU-1-T1
AAT4280IGu
AAT4280-1
AAT4280-2
AAT4280-3
SC70JW-8
aat4280ijs-3-t1
|
IRF540
Abstract: IRF540 mosfet with maximum VDS 30 V FULLY PROTECTED MOSFET IRFZ24 IRLZ44 MH10 MIC5018 MIC5018BM4 MIC5018YM4 Si9410DY
Text: MIC5018 IttyBitty High-Side MOSFET Driver General Description Features The MIC5018 IttyBitty™ high-side MOSFET driver is designed to switch an N-channel enhancement-type MOSFET from a TTL compatible control signal in high- or low-side switch applications. This driver features the tiny
|
Original
|
PDF
|
MIC5018
MIC5018
OT-143
M9999-042406
IRF540
IRF540 mosfet with maximum VDS 30 V
FULLY PROTECTED MOSFET
IRFZ24
IRLZ44
MH10
MIC5018BM4
MIC5018YM4
Si9410DY
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER F ield -E ffect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFET High Gain, Rugged Device
|
OCR Scan
|
PDF
|
MRF185
MRF185
|
Untitled
Abstract: No abstract text available
Text: Ordering number: ENN6980 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 /SANYO, DC / DC Converter Applications Features Package Dimensions • Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171
|
OCR Scan
|
PDF
|
ENN6980
CPH5804
MCH3312)
SBS006M)
CPH5804]
|
Untitled
Abstract: No abstract text available
Text: [ Ordering nufnb^rEN N 6981 | MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5805 SAWYD DC / DC Converter Applications Features Package Dimensions • Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3412 and a Schottky Barrier Diode (SBS006) 2171
|
OCR Scan
|
PDF
|
CPH5805
MCH3412)
SBS006)
CPH5805]
|
Zener diode with 9v FOR POWER SUPPLY
Abstract: 9V 1A MOSFET N-channel n02 mosfet MH10 inductor input 5 volt 3 v voltage mosfet marking micrel sot cd sot143 fet
Text: mica MIC5018 IttyBitty High-Side MOSFET Driver Preliminary Information General Description Features The MIC5018 IttyBitty™ high-side MOSFET driver is de signed to switch an N-channel enhancement-type MOSFET from a TTL compatible control signal in high- or low-side
|
OCR Scan
|
PDF
|
MIC5018
OT-143
MIC5018
Zener diode with 9v FOR POWER SUPPLY
9V 1A MOSFET N-channel
n02 mosfet
MH10 inductor
input 5 volt 3 v voltage mosfet
marking micrel sot cd
sot143 fet
|
Untitled
Abstract: No abstract text available
Text: PD-91816 International IÖR Rectifier sMPs MosFET IRFIB5N65A HEXFET Power MOSFET A pplications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed pow er switching • High V oltage Isolation = 2.5K V R M S V dss 650V
|
OCR Scan
|
PDF
|
PD-91816
IRFIB5N65A
|
501B 8 P
Abstract: 5018B
Text: MIC5018 IE ü b IttyBitty High-Side MOSFET Driver L Preliminary Information General Description Features The MIC5018 IttyBitty™ high-side MOSFET driver is de signed to switch an N-channel enhancement-type MOSFET from a TTL compatible conlrol signal in high- or low-side
|
OCR Scan
|
PDF
|
MIC5018
MIC5018
IC5018
F540-
501B 8 P
5018B
|
Power MOSFET TT 2146
Abstract: transistor TT 2146 mosfet TT 2146 MOTOROLA N-Channel MOSFET
Text: MOTOROLA O rder this docum ent by M RF185/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER F ield -E ffect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFET
|
OCR Scan
|
PDF
|
RF185/D
MRF185
Power MOSFET TT 2146
transistor TT 2146
mosfet TT 2146
MOTOROLA N-Channel MOSFET
|
