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    MOSFET POPWER Search Results

    MOSFET POPWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET POPWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UF2805B

    Abstract: 1000 MHz transistor 5W
    Text: UF2805B RF Power MOSFET Transistor 5W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration


    Original     		PDF UF2805B UF2805B 1000 MHz transistor 5W

    UF2840P

    Abstract: No abstract text available
    Text: UF2840P RF Power MOSFET Transistor 40W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration


    Original     		PDF UF2840P UF2840P

    Untitled

    Abstract: No abstract text available
    Text: UF28100M RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - 08.07 Features • • • • • • PACKAGE OUTLINE N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power


    Original     		PDF UF28100M 25-j1

    UF28100M

    Abstract: UF28100 transistor 200mhz 100w
    Text: UF28100M RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - 08.07 Features • • • • • • PACKAGE OUTLINE N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power


    Original     		PDF UF28100M UF28100M UF28100 transistor 200mhz 100w

    UF2820P

    Abstract: No abstract text available
    Text: UF2820P RF Power MOSFET Transistor 20W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration


    Original     		PDF UF2820P UF2820P

    UF28100H

    Abstract: No abstract text available
    Text: UF28100H RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Features • • • • • • PACKAGE OUTLINE N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power


    Original     		PDF UF28100H 25-j1 UF28100H

    UF2815B

    Abstract: k 815 MOSFET
    Text: UF2815B RF Power MOSFET Transistor 15W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Package Outline Features • • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration


    Original     		PDF UF2815B UF2815B k 815 MOSFET

    UF28100H

    Abstract: 75J10 power supply 100w UF28100 transistor 200mhz 100w
    Text: UF28100H RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Features • • • • • • PACKAGE OUTLINE N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power


    Original     		PDF UF28100H UF28100H 75J10 power supply 100w UF28100 transistor 200mhz 100w

    Untitled

    Abstract: No abstract text available
    Text: UF2815B RF Power MOSFET Transistor 15W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Package Outline Features • • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration


    Original     		PDF UF2815B

    Untitled

    Abstract: No abstract text available
    Text: UF28100V RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Features • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than competitive devices


    Original     		PDF UF28100V 25-j1

    UF28100V

    Abstract: UF28100 mosfet popwer
    Text: UF28100V RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Features • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than competitive devices


    Original     		PDF UF28100V UF28100V UF28100 mosfet popwer

    UF2805B

    Abstract: No abstract text available
    Text: UF2805B RF Power MOSFET Transistor 5W, 100-500 MHz, 28V Released; RoHS Compliant 20 Jan 11 Package Outline Features •      N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration


    Original     		PDF UF2805B UF2805B