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    MOSFET P-CHANNEL G5 Search Results

    MOSFET P-CHANNEL G5 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET P-CHANNEL G5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    d467

    Abstract: No abstract text available
    Text: MCA002 MECHANICAL DATA Dimensions in mm inches MULTI CHIP ARRAY 4 COMMON SOURCE P-CHANNEL MOSFETS AND 4 COMMON SOURCE N-CHANNEL FETS DESCRIPTION The MCA002 is a ceramic surface mount MOSFET array designed for high reliability applications. It contains 4 common source P Channel and 4 N Channel


    Original     		PDF MCA002 MCA002 200mA d467

    Untitled

    Abstract: No abstract text available
    Text: MCA002 MECHANICAL DATA Dimensions in mm inches MULTI CHIP ARRAY 4 COMMON SOURCE P-CHANNEL MOSFETS AND 4 COMMON SOURCE N-CHANNEL FETS DESCRIPTION The MCA002 is a ceramic surface mount MOSFET array designed for high reliability applications. It contains 4 common source P Channel and 4 N Channel


    Original     		PDF MCA002 MCA002

    EIGHT p-channel MOSFET ARRAY

    Abstract: DIODE G7 EIGHT MOSFET ARRAY G781-1 P-Channel 200V MOSFET AP0130NA AP0130 d5613 p channel mosfet 100v SOW-20
    Text: AP0116 AP0132 AP0120 AP0140 AP0130 8-Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information * * † Order Number / Package BVDSS/ BVDGS min RDS(ON) (max) ID(ON) (min) IDSS* @ VDS = -100V Max IDSS* @ VDS = -250V Max 18-Lead Plastic DIP


    Original     		PDF AP0116 AP0132 AP0120 AP0140 AP0130 -100V -250V 18-Lead SOW-20* -15mA EIGHT p-channel MOSFET ARRAY DIODE G7 EIGHT MOSFET ARRAY G781-1 P-Channel 200V MOSFET AP0130NA AP0130 d5613 p channel mosfet 100v SOW-20

    DIODE marking S4 23a

    Abstract: No abstract text available
    Text: APM2807QB P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C G S MOSFET • -20V/-2.3A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • • Super High Dense Cell Design A Reliable and Rugged NC D


    Original     		PDF APM2807QB -20V/-2 500mA. APM2807 150oC R0-2000 DIODE marking S4 23a

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD 96944 IRIS-G5653 Features INTEGRATED SWITCHER • Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology. • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.


    Original     		PDF IRIS-G5653 100uA G5653A TG3A-1128

    G5653

    Abstract: IRIS-G5653 SMPS Switcher IC of DIP 7 Converter Type SMPS 6 pin smps power control top mosfet IRIS-G5600
    Text: Data Sheet No. PD 96944A IRIS-G5653 Features INTEGRATED SWITCHER • Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology. Package Outline • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.


    Original     		PDF 6944A IRIS-G5653 100uA G5653 TG3A-1128 G5653 IRIS-G5653 SMPS Switcher IC of DIP 7 Converter Type SMPS 6 pin smps power control top mosfet IRIS-G5600

    ap0420

    Abstract: AP0432
    Text: A P04 inc. G a te P ro te cte d Preliminary 8 Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package * t 700n -15mA -1 .5nA — AP0416NA AP0416WG AP0416ND -200V 600n -15mA — — AP0420NA — AP0420ND -300V


    OCR Scan     		PDF -160V -200V -300V -320V -400V -100V -250V 18-Lead AP0416NA AP0420NA ap0420 AP0432

    Untitled

    Abstract: No abstract text available
    Text: fà k S u p e rte x AP0116 AP0132 AP0120 AP0140 AP0130 in c . 8-Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information _ Order Number / Package BVqgs min 11 BVDS9/ ^DS(O N) (max) loss* VDS= -100V Max loss* ® Vos -2S0V Max


    OCR Scan     		PDF AP0116 AP0132 AP0120 AP0140 AP0130 -100V 18-Lead SOW-20* -160V -15mA

    Untitled

    Abstract: No abstract text available
    Text: AP0116 AP0132 AP0120 AP0140 mm_ 8-Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package b v dss/ Plastic -250V Max Plastic DIP SOW-20* -1.5nA — AP0116NA AP0116W G AP0116ND -15mA — — AP0120NA — AP0120ND


    OCR Scan     		PDF AP0116 AP0132 AP0120 AP0140 18-Lead AP0116NA AP0120NA AP0130NA AP0132NA AP0140NA

    EIGHT p-channel MOSFET ARRAY

    Abstract: AP0116NA AP0116NB AP0116ND AP0116WG AP0120NA AP0120NB AP0120ND SOW-20
    Text: SUPERTEX INC Gl D e J fl773S‘lS_D0ai7b3 3 | ~ 8 Channel Power MOSFET Array Monolithic P-channel Enchancement Mode Ordering Information Order Number / Package BVDSS/ min ^DS(ON) (max) -160V -200V -300V -320V -400V 700n 600n 600n 700Q 700n SI b v dgs *DSS* @ ^DS =


    OCR Scan     		PDF fl773aiS -250V 18-Lead SOW-20* -160V -15mA AP0116NB AP0116NA AP0116WG EIGHT p-channel MOSFET ARRAY AP0116ND AP0120NA AP0120NB AP0120ND SOW-20

    Untitled

    Abstract: No abstract text available
    Text: SUPERTEX INC blE » fiTTBE'îS DDDaSin 3T1 ISTX AP04 V . Supertex inc. G ate Protected Preliminary 8 Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package BVoss/ BVoos min RDS(ON) (max) •dcon) (min) loss” V|)S =


    OCR Scan     		PDF -100V -250V 18-Lead SOW-20* -160V -15mA AP0416NA AP0416WG AP0416ND -200V

    23p06

    Abstract: No abstract text available
    Text: O M 23P06ST O M 20P10ST O M 12P10ST O M 8P20ST O M 8P25ST O M 2P50ST Û M 23P 06S A O M 20P10SA O M 12P10SA O M 8P20SA O M 8P25SA OM 2P50SA POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE, P-CHANNEL 60V To 500V P-Ch annel MOSFET In A H e r m e tic Package


    OCR Scan     		PDF 23P06ST 20P10ST 12P10ST 8P20ST 8P25ST 2P50ST 20P10SA 12P10SA 8P20SA 8P25SA 23p06

    Untitled

    Abstract: No abstract text available
    Text: . yjj Supertex inc 8-Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information_ O rd er N um b er / Package BV qqs m in If B V DSS/ F*ds(on) (m ax) I dss* V ds = -100V Max -160V 700Q -15mA -1.5nA


    OCR Scan     		PDF AP0116WG AP0132WG AP0140W AP0116ND AP0120ND AP0130ND AP0132ND AP0140ND -160V -200V

    EIGHT MOSFET ARRAY

    Abstract: EIGHT n-channel MOSFET ARRAY
    Text: A N 04 inc. G a te P ro te cte d Preliminary 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information Order Number / Package BVdss/ ^DS ON (min) 160V (max) 350n 200V 300V Plastic SOW-20* Diet — 18-Lead Plastic DIP AN0416NA AN0416WG


    OCR Scan     		PDF 18-Lead AN0416NA AN0420NA AN0430NA AN0432NA AN0440NA SOW-20* AN0416WG AN0416ND AN0420ND EIGHT MOSFET ARRAY EIGHT n-channel MOSFET ARRAY

    Untitled

    Abstract: No abstract text available
    Text: OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST OM23P06SA OM20P10SA OM12P10SA OM8P20SA OM8P25SA OM2P50SA POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE, P-CHANNEL 60V To 500V P -C h a n n e l M O S F E T In A H erm etic P a ck a g e FEATURES •


    OCR Scan     		PDF OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST OM23P06SA OM20P10SA OM12P10SA OM8P20SA

    IRF7205

    Abstract: No abstract text available
    Text: P D -9 .1 1 0 4 B International i R Rectifier IRF7205 H EXFET P o w er M O S F E T • Adavanced Process Technology • Ultra Low On-Resistance • P-Channel MOSFET • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching


    OCR Scan     		PDF IRF7205 IRF7205

    Untitled

    Abstract: No abstract text available
    Text: 4055452 Q Q I S n b G54 • INR International Rectifier HEXFET Power MOSFET • • • • • • • PD-9.837 IRFI9540G INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm P-Channel 175°C Operating Temperature


    OCR Scan     		PDF IRFI9540G O-220 \50KQ

    g118ap

    Abstract: G118 diode EE d129 st s466
    Text: W T Siliconix J Q P incorporated 1 Q • ■w Monolithic 6-Channel Enhancement-type MOSFET Switch FEATURES BENEFITS APPLICATIONS • Internal Zener Diode Protects the Gate • • Switching Analog Signals • Multiplexing • Six Switches Per Chip • Designed to Operate with


    OCR Scan     		PDF

    G118AL

    Abstract: No abstract text available
    Text: w r J j P S ilic o n * in c o r p o r a te d f i l I 1 Q I W Monolithic 6-Channel Enhancement-type MOSFET Switch FEATURES BENEFITS APPLICATIONS • Internal Z en e r Diode Protects th e Gate • • Switching Analog Signals • M ultiplexing • Six Sw itches Per Chip


    OCR Scan     		PDF 2-125p85Â G118AL

    Untitled

    Abstract: No abstract text available
    Text: Temic SÌ4559EY S e m i c o n d u c t o r s Dual N- and P-Channel 60-Y, 175°C Rated MOSFET Product Summary V d s V N-Channel r DS(on) ( ß ) I d (A ) 0.055 @ V os = 10 V ± 4.5 0.075 @ VGS = 4.5 V ± 3 .9 0.120 @ VGs = -10 V ± 3.1 0.150 @ VGS = -4 .5 V


    OCR Scan     		PDF 4559EY S-49520-- 18-Dec-96 18-Dec-%

    Untitled

    Abstract: No abstract text available
    Text: bOE ]> • SEHELAB 0133107 □□□G53‘ì 711 ■SMLB PLC r r rT ' - ' 3 ^ ' Z 3 M A Gl\IA TEC BUZ 9 0 5 b u z 90S NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES


    OCR Scan     		PDF BUZ900 BUZ901 BUZ900D BUZ905D BUZ901D BUZ906D

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Standard Power MOSFET IRFP250 VDSS = 200 V ID cont = 30 A P DS(on) = 85 mQ N-Channel Enhancement Mode Symbol Test Conditions V DSS ^ V DGR T.J = 25°C to 150°C;’ v GS Maximum Ratings = 25 °C to 150°C 200 V 200 V Continuous ±20 V v GSM Transient


    OCR Scan     		PDF IRFP250 O-247

    N-Channel Depletion-Mode MOSFET

    Abstract: No abstract text available
    Text: LND250 P relim ina ry N-Channel Depletion-Mode MOSFET Ordering Information Order Num ber / Package Product marking for SOT-23: min TO-236AB* NDE* 1.0mA LND250K1 where * = 2-week alpha date code BVd s x / ^DS(ON) Idss B V dgx (max) 500V 1.0KQ *S am e as SO T-23. All units shipped on 3,000 piece carrier tape reels.


    OCR Scan     		PDF LND250 O-236AB* LND250K1 OT-23: 300jxs N-Channel Depletion-Mode MOSFET

    41113

    Abstract: No abstract text available
    Text: T e m ic siliconi»_SÌ6955DQ Dual P-Channel Enhancement-Mode MOSFET Product Summary VDs V H)S(on) (Q ) I d (A) 0.085 @ V G S= - 1 0 V ±2.5 0.19 @ V os = -4 .5 V ±1.8 30 Si o o TSSOP-8 D, C I s. C I s. C I G, I Z T | D2 • S Í6 9 5 5 D Q


    OCR Scan     		PDF 6955DQ S-41113-- 41113