Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTT8P03-H Power MOSFET -8A, -30V, P-CHANNEL MOSFET DESCRIPTION The UTC UTT8P03-H is a P-channel MOSFET. it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge.
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UTT8P03-H
UTT8P03-H
UTT8P03G-K08-3020-R
QW-R210-006
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ENN8206
Abstract: CPH5810 MCH3312
Text: CPH5810 Ordering number : ENN8206 CPH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS001)
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CPH5810
ENN8206
MCH3312)
SBS001)
ENN8206
CPH5810
MCH3312
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EMH2603
Abstract: No abstract text available
Text: EMH2603 Ordering number : ENA0657 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2603 General-Purpose Switching Device Applications Features • • • The EMH2603 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
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EMH2603
ENA0657
EMH2603
A0657-7/7
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Untitled
Abstract: No abstract text available
Text: EMH2602 Ordering number : EN8732 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2602 General-Purpose Switching Device Applications Features • • The EMH2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
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EMH2602
EN8732
EMH2602
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UT4435-H Power MOSFET -8A, -30V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT4435-H is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed, low gate charge and a minimum on-state
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UT4435-H
UT4435-H
UT4435G-S08-R
QW-R208-053
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EMH2601
Abstract: EN8731 it10408
Text: EMH2601 Ordering number : EN8731 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2601 General-Purpose Switching Device Applications Features • • The EMH2601 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
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EMH2601
EN8731
EMH2601
EN8731
it10408
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W360
Abstract: FW360
Text: Ordering number : ENN7556 FW360 N-Channel and P-Channel Silicon MOSFETs FW360 Ultrahigh-Speed Switching, Motor Driver Applications Preliminary Features • The FW360 incorporates an N-channel MOSFET and a unit : mm P-channel MOSFET that feature low ON-resistance and 2129
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ENN7556
FW360
FW360
FW360]
W360
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EMH2602
Abstract: No abstract text available
Text: EMH2602 Ordering number : EN8732A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2602 General-Purpose Switching Device Applications Features • • The EMH2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
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EMH2602
EN8732A
EMH2602
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN6980 CPH5804 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171
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ENN6980
CPH5804
MCH3312)
SBS006M)
CPH5804]
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MCH3312
Abstract: CPH5854 SB1003M3 A05166 marking YG
Text: CPH5854 Ordering number : ENA0516 SANYO Semiconductors DATA SHEET CPH5854 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type containing a P-Channel MOSFET MCH3312 and a Schottky Barrier Diode (SB1003M3),
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CPH5854
ENA0516
MCH3312)
SB1003M3)
A0516-6/6
MCH3312
CPH5854
SB1003M3
A05166
marking YG
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diode N1004
Abstract: CPH5822 MCH3312 N1004 SBS010M
Text: CPH5822 Ordering number : ENN7702A CPH5822 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS010M)
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CPH5822
ENN7702A
MCH3312)
SBS010M)
diode N1004
CPH5822
MCH3312
N1004
SBS010M
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Untitled
Abstract: No abstract text available
Text: CPH5822 Ordering number : ENN7702 CPH5822 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General Purpose Switching Device Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS010M)
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ENN7702
CPH5822
MCH3312)
SBS010M)
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VEC2609
Abstract: INVERTER BOARD SANYO
Text: VEC2609 Ordering number : ENA0103 VEC2609 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • • The best suited for inverter applications. The VEC2609 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,
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VEC2609
ENA0103
VEC2609
A0103-6/6
INVERTER BOARD SANYO
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN6899 CPH5802 CPH5802 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Package Dimensions unit : mm 2171 [CPH5802] 2.9 0.15 0.2 4 3 2.8 0.6 5 1.6 Composite type with a P-Channel Sillicon MOSFET
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ENN6899
CPH5802
CPH5802]
MCH3306)
SBS004)
CPH5802/D
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CPH5821
Abstract: MCH3312 SBS004 marking qx
Text: CPH5821 Ordering number : ENN7701 CPH5821 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS004)
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CPH5821
ENN7701
MCH3312)
SBS004)
CPH5821
MCH3312
SBS004
marking qx
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30P04 Power MOSFET 40A, 21V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTC’s advanced
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UTT30P04
UTT30P04
O-252
UTT30P04L-TN3-R
UTT30P04G-TN3-R
QW-R502-613
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AN 7468
Abstract: diode N1004 ic 74682 TA-3804 CPH5813 MCH3318 N1004 SBS010M 74682
Text: CPH5813 Ordering number : ENN7468A CPH5813 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • Composite type with a P-Channel Sillicon MOSFET MCH3318 and a Schottky Barrier Diode (SBS010M) contained in one package facilitating high-density mounting.
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CPH5813
ENN7468A
MCH3318)
SBS010M)
AN 7468
diode N1004
ic 74682
TA-3804
CPH5813
MCH3318
N1004
SBS010M
74682
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Untitled
Abstract: No abstract text available
Text: STS8C6H3LL N-channel 30 V, 0.019 Ω typ., 8 A, P-channel 30 V, 0.024 Ω typ., 6 A STripFET Power MOSFET in a SO-8 package Datasheet - preliminary data Features Order code Channel VDS RDS on max ID 0.021 Ω 8A 0.030 Ω 5A N STS8C6H3LL 30 V P • STripFET™V N-channel Power MOSFET
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DocID023495
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT30P04 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT30P04 is a P-channel enhancement mode Power MOSFET, providing customers fast switching, ruggedized device design, low on-resistance and cost-effectiveness with UTC’s
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UT30P04
UT30P04
O-252
UT30P04L-TN3-R
UT30P04G-TN3-R
QW-R502-465
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613 MOSFET
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30P04 Power MOSFET 40A, 21V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTC’s advanced
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UTT30P04
UTT30P04
O-252
UTT30P04L-TN3-R
UTT30P04G-TN3-R
QW-R502-613
613 MOSFET
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CPH5802
Abstract: MCH3306 SBS004
Text: Ordering number : ENN6899 CPH5802 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5802 DC / DC Converter Applications Package Dimensions unit : mm 2171 [CPH5802] 2.9 0.15 0.2 4 3 0.6 5 0.05 2.8 1.6 Composite type with a P-Channel Sillicon MOSFET
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ENN6899
CPH5802
CPH5802]
MCH3306)
SBS004)
CPH5802
MCH3306
SBS004
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CPH6619
Abstract: No abstract text available
Text: CPH6619 Ordering number : ENA0473 SANYO Semiconductors DATA SHEET CPH6619 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • • Composite type of a low on-resistance ultra-high switching P-channel MOSFET and a small signal N-channel MOSFET
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CPH6619
ENA0473
A0473-7/7
CPH6619
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UTT20P04
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT20P04 Power MOSFET -40V, -20A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT20P04 is a P-channel Power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.
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UTT20P04
UTT20P04
UTT20P04L-TN3-R
UTT20P04G-TN3-R
O-252
QW-R502-774
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w907
Abstract: ENA1810
Text: FW907 Ordering number : ENA1810 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW907 General-Purpose Switching Device Applications Features • • • ON-resistance Nch: RDS on 1=13mΩ(typ.), Pch: RDS(on)1=20mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET
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FW907
ENA1810
PW100ms)
PW10s)
A1810-6/6
w907
ENA1810
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