Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET P-CHANNEL 2A Search Results

    MOSFET P-CHANNEL 2A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET P-CHANNEL 2A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VEC2605

    Abstract: No abstract text available
    Text: VEC2605 Ordering number : ENN8197 P-Channel and N-Channel Silicon MOSFET VEC2605 General-Purpose Switching Device Applications Features • • • • Best suited for DC/DC converters. The VEC2605 incorporates a P-channel MOSFET and an N-channel MOSFET that feature low ON-resistance


    Original     		PDF VEC2605 ENN8197 VEC2605

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2P06 Power MOSFET -2A, 60V D-S P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2P06 is a P-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge.


    Original     		PDF UT2P06 UT2P06 UT2P06G-AE3-R OT-23 2P06G QW-R502-B01

    MCH3314

    Abstract: SCH2805
    Text: SCH2805 Ordering number : ENN7760 SCH2805 Features MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET MCH3314 and a Schottky barrier diode (SB0105)


    Original     		PDF SCH2805 ENN7760 MCH3314) SB0105) MCH3314 SCH2805

    Untitled

    Abstract: No abstract text available
    Text: SCH2805 SCH2805 Features Ordering number : ENN7760 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET MCH3314 and a Schottky barrier diode (SB0105)


    Original     		PDF SCH2805 ENN7760 MCH3314) SB0105) SCH2805/D

    ENN8206

    Abstract: CPH5810 MCH3312
    Text: CPH5810 Ordering number : ENN8206 CPH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS001)


    Original     		PDF CPH5810 ENN8206 MCH3312) SBS001) ENN8206 CPH5810 MCH3312

    EMH2603

    Abstract: No abstract text available
    Text: EMH2603 Ordering number : ENA0657 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2603 General-Purpose Switching Device Applications Features • • • The EMH2603 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and


    Original     		PDF EMH2603 ENA0657 EMH2603 A0657-7/7

    Untitled

    Abstract: No abstract text available
    Text: EMH2602 Ordering number : EN8732 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2602 General-Purpose Switching Device Applications Features • • The EMH2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and


    Original     		PDF EMH2602 EN8732 EMH2602

    Untitled

    Abstract: No abstract text available
    Text: ECH8660 Ordering number : ENA1358B SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8660 General-Purpose Switching Device Applications Features • • • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and


    Original     		PDF ECH8660 ENA1358B ECH8660 A1358-8/8

    EMH2601

    Abstract: EN8731 it10408
    Text: EMH2601 Ordering number : EN8731 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2601 General-Purpose Switching Device Applications Features • • The EMH2601 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and


    Original     		PDF EMH2601 EN8731 EMH2601 EN8731 it10408

    a1358

    Abstract: ECH8660
    Text: ECH8660 Ordering number : ENA1358 SANYO Semiconductors DATA SHEET ECH8660 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and


    Original     		PDF ECH8660 ENA1358 ECH8660 PW10s, A1358-6/6 a1358

    W360

    Abstract: FW360
    Text: Ordering number : ENN7556 FW360 N-Channel and P-Channel Silicon MOSFETs FW360 Ultrahigh-Speed Switching, Motor Driver Applications Preliminary Features • The FW360 incorporates an N-channel MOSFET and a unit : mm P-channel MOSFET that feature low ON-resistance and 2129


    Original     		PDF ENN7556 FW360 FW360 FW360] W360

    ECH8620

    Abstract: No abstract text available
    Text: ECH8620 Ordering number : ENA0659 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8620 General-Purpose Switching Device Applications Features • • The ECH8620 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and


    Original     		PDF ECH8620 ENA0659 ECH8620 A0659-6/6

    EMH2602

    Abstract: No abstract text available
    Text: EMH2602 Ordering number : EN8732A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2602 General-Purpose Switching Device Applications Features • • The EMH2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and


    Original     		PDF EMH2602 EN8732A EMH2602

    Untitled

    Abstract: No abstract text available
    Text: ECH8668 Ordering number : ENA1510 SANYO Semiconductors DATA SHEET ECH8668 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and


    Original     		PDF ENA1510 ECH8668 ECH8660 PW10s, 900mm2 A1510-6/6

    ECH8668

    Abstract: ECH8660 a15102
    Text: ECH8668 Ordering number : ENA1510 SANYO Semiconductors DATA SHEET ECH8668 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and


    Original     		PDF ECH8668 ENA1510 ECH8660 A1510-6/6 ECH8668 a15102

    Untitled

    Abstract: No abstract text available
    Text: ECH8660 Ordering number : ENA1358B SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8660 General-Purpose Switching Device Applications Features • • • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and


    Original     		PDF ECH8660 ENA1358B ECH8660 A1358-8/8

    ECH8619

    Abstract: ech8 sanyo
    Text: ECH8619 Ordering number : ENA0658 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8619 General-Purpose Switching Device Applications Features • • The ECH8619 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and


    Original     		PDF ECH8619 ENA0658 ECH8619 A0658-6/6 ech8 sanyo

    w343

    Abstract: 7555 7555 ID D1003 FW343 7555-1 EN755
    Text: FW343 Ordering number : EN7555A N-Channel and P-Channel Silicon MOSFETs FW343 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage


    Original     		PDF FW343 EN7555A PW10s) PW100ms) w343 7555 7555 ID D1003 FW343 7555-1 EN755

    W356

    Abstract: FW356
    Text: FW356 Ordering number : ENN7743 FW356 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • For motor drives, inverters. The FW356 in corporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,


    Original     		PDF FW356 ENN7743 FW356 W356

    a1358

    Abstract: a-1358
    Text: ECH8660 Ordering number : ENA1358A SANYO Semiconductors DATA SHEET ECH8660 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and


    Original     		PDF ENA1358A ECH8660 ECH8660 PW10s, 1200mm2 A1358-6/6 a1358 a-1358

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6980 CPH5804 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171


    Original     		PDF ENN6980 CPH5804 MCH3312) SBS006M) CPH5804]

    TA 8403 A

    Abstract: w507 FW507 MCH3312 SB1003M
    Text: FW507 Ordering number : ENN8403 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FW507 General-Purpose Switching Device Applications Features • • Composite type with a low ON-resistance, ultrahigh-speed switching, low voltage drive, P-channel MOSFET and


    Original     		PDF FW507 ENN8403 FW507 MCH3312 SB1003M TA 8403 A w507

    MCH3312

    Abstract: CPH5854 SB1003M3 A05166 marking YG
    Text: CPH5854 Ordering number : ENA0516 SANYO Semiconductors DATA SHEET CPH5854 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type containing a P-Channel MOSFET MCH3312 and a Schottky Barrier Diode (SB1003M3),


    Original     		PDF CPH5854 ENA0516 MCH3312) SB1003M3) A0516-6/6 MCH3312 CPH5854 SB1003M3 A05166 marking YG

    CPH5802

    Abstract: No abstract text available
    Text: Ordering number : ENN6899 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5802 DC / DC Converter Applications Package Dimensions Features • Composite type with a P-Channel Sillicon MOSFET M CH3306 and a Schottky Barrier Diode (SBS004)


    OCR Scan     		PDF ENN6899 CPH5802 CH3306) SBS004) CPH5802]