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    MOSFET P DGS Search Results

    MOSFET P DGS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET P DGS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LP0801K1

    Abstract: Diode SOT-23 Marking code B.V LP0801ND N mosfet sot-23 p mos sot23 MOSFET P-Channel sot-23 SS MARKING sot23 Diode SOT-23 marking 3V marking code SS SOT23 MOSFET DRIVER oni 350 SWITCH
    Text: LP0801 ^ S u p e r ta x n i c . Low Threshold Preliminary P-Channel Enhancement-Mode Lateral MOSFET Ordering Information Order Number / Package BVDSS /' BV DGS p DS ON *D(ON) (max) (min) VGS(th) (max) TO-236AB* Dice P 8U * -16.5V 12.0Q -200mA -1.0V LP0801K1


    OCR Scan     		LP0801 O-236AB* -200mA LP0801K1 LP0801ND OT-23. OT-23: -50mA -150mA, Diode SOT-23 Marking code B.V LP0801ND N mosfet sot-23 p mos sot23 MOSFET P-Channel sot-23 SS MARKING sot23 Diode SOT-23 marking 3V marking code SS SOT23 MOSFET DRIVER oni 350 SWITCH PDF

    Untitled

    Abstract: No abstract text available
    Text: LP0801 h m . _ Low ThreshoJ P relim ina ry P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV DSS / BV DGS -16.5V D max (min) V GS(th) (max) 12.0Q -20 0m A -1.0V DS(ON) ^D(ON) Order Number / Package TO-236AB*


    OCR Scan     		LP0801 O-236AB* LP0801K1 0801N -150m -100m -200m 300jxs PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ . LP07 Supertex inc P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BVDSS / BV p DGS DS ON *D(ON) (max) (min) V GS(th) (max) 1.50 -1-25A -1.0V -16.5V Order Number / Package TO-92 LP0701N3 Features DICE LP0701ND Advanced MOS Technology Ultra low threshold


    OCR Scan     		LP0701ND -1-25A LP0701N3 PDF

    Untitled

    Abstract: No abstract text available
    Text: LP0701 inc. P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV DSS / BV ° ¥ dgs p Order Number / Package max (min) V GS(th) (max) TO-92 SO-8 □ice 1 .5 ÌÌ -1.25A -1.0V LP0701N3 LP0701LG LP0701ND DS(ON) -16.5V '[>(ON) Features □ Ultra low threshold


    OCR Scan     		LP0701 LP0701N3 LP0701LG LP0701ND PDF

    Diode SMD SJ 66A

    Abstract: No abstract text available
    Text: P D -9.1646 International IGR Rectifier IR F 7 5 2 1 D 1 PRELIMINARY FETKY MOSFET and Schottky Diode • • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint


    OCR Scan     		5545S Diode SMD SJ 66A PDF

    DSS SOT23

    Abstract: marking code MV mosfet SOT23 Diode SOT-23 marking 3V lp0801k1
    Text: LP0801 Supertex inc. Low Threshold Preliminary P-Channel Enhancement-Mode Lateral MOSFET Ordering Information p Order Number / Package B V dcs max (min) VGSflh) (max) TO-236AB* Die P8U * -16.5V 120 -200mA -1.0V LP0801K1 LP0801ND where * = 2-week alpha date code


    OCR Scan     		LP0801 -200mA O-236AB* LP0801K1 LP0801ND OT-23: OT-23. DSS SOT23 marking code MV mosfet SOT23 Diode SOT-23 marking 3V PDF

    VQ3001

    Abstract: No abstract text available
    Text: lJì Supertex inc. TQ3001 VQ3001 VQ7254 Surface Mount N- and P-Channel Quad Power MOSFET Arrays Ordering Information Standard Commercial Devices V ^ D S ON GS |ttl) Order Number / Package (max) (max) Q1 + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 14-Pin C-Dip*


    OCR Scan     		TQ3001 VQ3001 VQ7254 14-Pin VQ3001N6 TQ3001N6 VQ7254N6 VQ3001N7 TQ3001N7 PDF

    VQ3001/VQ7254

    Abstract: No abstract text available
    Text: TQ3001 VQ3001 VQ7254 Surface Mount | N- and P-Channel Quad Power MOSFET Arrays Ordering Information R b v dss/ dS VGS th (ON) Order Number / Package (max) (max) Q1 + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 14-Pin C-Dip* 20 Terminal LCC Quad 40V 3Q


    OCR Scan     		TQ3001 VQ3001 VQ7254 VQ3001NF TQ3001NF 14-Pin VQ3001N6 TQ3001N6 VQ7254N6 VQ3001/VQ7254 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TQ3001 VQ3001 VQ7254 S urface M ount N- and P-Channel Quad Power MOSFET Arrays Ordering Information V R DS ON GS (ttl) Order Number / Package (max) (max) Q1 + 0 2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 14-Pin C-Dip* 20 Terminal LCC Quad


    OCR Scan     		TQ3001 VQ3001 VQ7254 14-Pin VQ3001N6 TQ3001N6 VQ7254N6 VQ3001NF TQ3001NF PDF

    MOSFET 923 54

    Abstract: N06L vq3001 quad N-Channel MOSFET dip package 40v N- and P-Channel dip
    Text: TQ3001 VQ3001 VQ7254 Supertax inc. N- and P-Channel Quad Power MOSFET Arrays Ordering Information vYa s th R ds (ON) (max) Q l + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 40V 3.0Q 2.0V -3.0V VQ3001N6 — 40V 3.o n 1.6V -2.4V — TQ3001N7 20V 3.0Q 2.0V


    OCR Scan     		TQ3001 VQ3001 VQ7254 14-Pin VQ3001N6 VQ7254N6 TQ3001N7 250mA VQ7254 MOSFET 923 54 N06L quad N-Channel MOSFET dip package 40v N- and P-Channel dip PDF

    TQ3001

    Abstract: VQ3001 VQ3001N6 VQ7254 VQ7254N6 Supertex Quad quad N-Channel MOSFET dip package 2NQ1
    Text: VQ3001 VQ7254 Supertex inc. N- and P-Channel Quad Power MOSFET Arrays Ordering Information V GS th R d S (ON) b v dss/ Order Num ber / Package (max) (max) Q1 + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 40V 3.0Î2 2.0V -3.0V VQ3001N6 20V 3.0Î2 2.0V


    OCR Scan     		VQ3001 VQ7254 14-Pin VQ3001N6 VQ7254N6 VQ3001 300jis TN06L TP06L TQ3001 VQ3001N6 VQ7254 VQ7254N6 Supertex Quad quad N-Channel MOSFET dip package 2NQ1 PDF

    EIGHT p-channel MOSFET ARRAY

    Abstract: AP0116NA AP0116NB AP0116ND AP0116WG AP0120NA AP0120NB AP0120ND SOW-20
    Text: SUPERTEX INC Gl D e J fl773S‘lS_D0ai7b3 3 | ~ 8 Channel Power MOSFET Array Monolithic P-channel Enchancement Mode Ordering Information Order Number / Package BVDSS/ min ^DS(ON) (max) -160V -200V -300V -320V -400V 700n 600n 600n 700Q 700n SI b v dgs *DSS* @ ^DS =


    OCR Scan     		fl773aiS -250V 18-Lead SOW-20* -160V -15mA AP0116NB AP0116NA AP0116WG EIGHT p-channel MOSFET ARRAY AP0116ND AP0120NA AP0120NB AP0120ND SOW-20 PDF

    Untitled

    Abstract: No abstract text available
    Text: LP0701 Çh Supertex inc. Low'Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV / BV “ *DGS D max (min) VGS(th> (max) 1.5£2 -1 ,25A -1.0V DS(ON) -16.5V ^D(OH) Order Number / Package TO-92 SO-8 Dice LP0701N3 LP0701 LG LP0701ND


    OCR Scan     		LP0701 LP0701N3 LP0701 LP0701ND PDF

    Untitled

    Abstract: No abstract text available
    Text: fà k S u p e rte x AP0116 AP0132 AP0120 AP0140 AP0130 in c . 8-Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information _ Order Number / Package BVqgs min 11 BVDS9/ ^DS(O N) (max) loss* VDS= -100V Max loss* ® Vos -2S0V Max


    OCR Scan     		AP0116 AP0132 AP0120 AP0140 AP0130 -100V 18-Lead SOW-20* -160V -15mA PDF

    Untitled

    Abstract: No abstract text available
    Text: LP0701 Supertex inc. Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information D DS ON (max) -16.5V 1 . 50 . JÎ BV DSS / BV DGS Order Number / Package V GS(th) -1.25A (max) TO-92 SO-8 Die -1.0V LP0701N3 LP0701LG LP0701ND Features Advanced MOS Technology


    OCR Scan     		LP0701 LP0701N3 LP0701LG LP0701ND PDF

    ap0140a

    Abstract: 8 Channel Power Mosfet Array
    Text: SUPERTEX INC Gl D e J fl773S‘lS_D0ai7b3 3 | ~ 8 Channel Power MOSFET Array Monolithic P-channel Enchancement Mode Ordering Information BVDSS/ ^D S O N (min) (max) 700n -160V -200V -300V -320V -400V 600n 600n 700Q 70 0n SI b v dgs @ ^DS -100 V Max *D SS*


    OCR Scan     		fl773S` -160V -200V -300V -320V -400V 18-Lead AP0116NB AP0120NB AP0130NB ap0140a 8 Channel Power Mosfet Array PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -9.1484A International IO R Rectifier IRF9Z24N PRELIMINARY HEXFET^ Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Voss = -55V ^ D S o n =


    OCR Scan     		IRF9Z24N PDF

    Untitled

    Abstract: No abstract text available
    Text: AP0116 AP0132 AP0120 AP0140 mm_ 8-Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package b v dss/ Plastic -250V Max Plastic DIP SOW-20* -1.5nA — AP0116NA AP0116W G AP0116ND -15mA — — AP0120NA — AP0120ND


    OCR Scan     		AP0116 AP0132 AP0120 AP0140 18-Lead AP0116NA AP0120NA AP0130NA AP0132NA AP0140NA PDF

    BV 726 C

    Abstract: BV 724 C
    Text: LP0701 Supertex inc. Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV / BVDGS Order Number / Package DS ON '□(ON) (max) (min) VGS(ttl) (max) TO-92 SO-8 Die 1.5U -1.25A -1.0V LP0701N3 LP0701LG LP0701ND D -16.5V Features Advanced MOS Technology


    OCR Scan     		LP0701 LP0701N3 LP0701LG LP0701ND BV 726 C BV 724 C PDF

    Untitled

    Abstract: No abstract text available
    Text: . yjj Supertex inc 8-Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information_ O rd er N um b er / Package BV qqs m in If B V DSS/ F*ds(on) (m ax) I dss* V ds = -100V Max -160V 700Q -15mA -1.5nA


    OCR Scan     		AP0116WG AP0132WG AP0140W AP0116ND AP0120ND AP0130ND AP0132ND AP0140ND -160V -200V PDF

    EIGHT MOSFET ARRAY

    Abstract: EIGHT n-channel MOSFET ARRAY
    Text: A N 04 inc. G a te P ro te cte d Preliminary 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information Order Number / Package BVdss/ ^DS ON (min) 160V (max) 350n 200V 300V Plastic SOW-20* Diet — 18-Lead Plastic DIP AN0416NA AN0416WG


    OCR Scan     		18-Lead AN0416NA AN0420NA AN0430NA AN0432NA AN0440NA SOW-20* AN0416WG AN0416ND AN0420ND EIGHT MOSFET ARRAY EIGHT n-channel MOSFET ARRAY PDF

    Untitled

    Abstract: No abstract text available
    Text: mi BFC50 SEME LAB 4TH GENERATION MOSFET T 0 2 4 7 - A D P a cka g e O u tlin e. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Vpss ^D(cont) ^DS(on) 500V 23.0A 0.250 BSC Terminal 1 Terminal 3 Gate Source Terminal 2 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		BFC50 A1331S7 PDF

    d3s diode

    Abstract: EIGHT n-channel MOSFET ARRAY AN0140ND
    Text: AN01 in c . 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information_ Order Number / Package * ' If BV qss/ BV dgs min RDS(ON) (max) 160V 350Ü 200V 300Ì2 300V 300CÌ 25mA 320V 350£2 25mA 400V 350£2


    OCR Scan     		18-Lead AN0116NA AN0120NA AN0130NA AN0132NA AN0140NA SOW-20* AN0116WG AN0132WG AN0140WG d3s diode EIGHT n-channel MOSFET ARRAY AN0140ND PDF

    IF444

    Abstract: SGSF544
    Text: 7 G 2ci537 DGSTlflT Q SGS-THOMSON L i [O T O iD D i P 23.- o SG SF344/IF344 SG SF444/IF444/F544 S G S-THOMSON 3QE D FASTS WITCH HOLLOW-EMITTER NPN TRANSISTORS • HIG H S W IT C H IN G S PEED NPN PO W ER TRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR O FF-LINE APPLIC A­


    OCR Scan     		SF344/IF344 SF444/IF444/F544 50kHz 500ms IF444 SGSF544 PDF