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    MOSFET P CHANNEL SOT-23 TSM2301CX Search Results

    MOSFET P CHANNEL SOT-23 TSM2301CX Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3J356R Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -2 A, 0.3 Ω@-10 V, SOT-23F Visit Toshiba Electronic Devices & Storage Corporation
    SSM3J332R Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -30 V, -6 A, 0.042 Ω@-10 V, SOT-23F Visit Toshiba Electronic Devices & Storage Corporation
    SSM3J351R Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -3.5 A, 0.134 Ω@-10 V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET P CHANNEL SOT-23 TSM2301CX Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TSM2301CX

    Abstract: TSM2301 P-Channel MOSFET code 1A
    Text: TSM2301 20V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 130 @ VGS = -4.5V -2.8 190 @ VGS = -2.5V -2.0 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		TSM2301 OT-23 TSM2301CX TSM2301 P-Channel MOSFET code 1A PDF

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    Abstract: No abstract text available
    Text: TSM2301 20V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(m) SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 130 @ VGS = -4.5V -2.8 190 @ VGS = -2.5V -2.0 Block Diagram  Advance Trench Process Technology  High Density Cell Design for Ultra Low On-resistance


    Original     		TSM2301 OT-23 TSM2301CX PDF