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    MOSFET P CHANNEL 30V 3A Search Results

    MOSFET P CHANNEL 30V 3A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJK0393DPA-00#J53 Renesas Electronics Corporation 30V, 40A, 4.3MΩ Max. N Channel Power MOSFET High Speed Power Switching Visit Renesas Electronics Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET P CHANNEL 30V 3A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STS3C3F30L

    Abstract: No abstract text available
    Text: STS3C3F30L N-CHANNEL 30V - 0.050 Ω - 3.5A SO-8 P-CHANNEL 30V - 0.140 Ω - 3A SO-8 STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS3C3F30L(N-Channel) STS3C3F30L(P-Channel) 30 V 30 V < 65 mΩ < 165 mΩ 3.5 A 3A TYPICAL RDS(on) (N-Channel) = 50 mΩ


    Original     		PDF STS3C3F30L STS3C3F30L

    STS3C3F30L

    Abstract: No abstract text available
    Text: STS3C3F30L N-CHANNEL 30V - 0.050 Ω - 3.5A SO-8 P-CHANNEL 30V - 0.140 Ω - 3A SO-8 STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS3C3F30L(N-Channel) STS3C3F30L(P-Channel) 30 V 30 V < 65 mΩ < 165 mΩ 3.5 A 3A TYPICAL RDS(on) (N-Channel) = 50 mΩ


    Original     		PDF STS3C3F30L STS3C3F30L

    27BSC

    Abstract: MS-012AA ZXMC3A17DN8 ZXMC3A17DN8TA ZXMC3A17DN8TC
    Text: ZXMC3A17DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel : V BR DSS= 30V : RDS(on)= 0.050 ; ID= 5.4A P-Channel : V(BR)DSS= -30V : RDS(on)= 0.070 ; ID= -4.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that


    Original     		PDF ZXMC3A17DN8 27BSC MS-012AA ZXMC3A17DN8 ZXMC3A17DN8TA ZXMC3A17DN8TC

    Untitled

    Abstract: No abstract text available
    Text: ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure


    Original     		PDF ZXMC3A16DN8 ZXMC3A16DNlephone:

    Transistor Mosfet N-Ch 30V

    Abstract: P Channel STripFET STS3C3F30L P-channel N-Channel power mosfet SO-8
    Text: STS3C3F30L N-CHANNEL 30V - 0.050 Ω - 3.5A SO-8 P-CHANNEL 30V - 0.140 Ω - 3A SO-8 STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS3C3F30L(N-Channel) STS3C3F30L(P-Channel) 30 V 30 V < 65 mΩ < 165 mΩ 3.5 A 3A TYPICAL RDS(on) (N-Channel) = 50 mΩ


    Original     		PDF STS3C3F30L STS3C3F30L Transistor Mosfet N-Ch 30V P Channel STripFET P-channel N-Channel power mosfet SO-8

    STS3C3F30L

    Abstract: No abstract text available
    Text: STS3C3F30L N-CHANNEL 30V - 0.050 Ω - 3.5A SO-8 P-CHANNEL 30V - 0.140 Ω - 3A SO-8 STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS3C3F30L(N-Channel) STS3C3F30L(P-Channel) 30 V 30 V < 65 mΩ < 165 mΩ 3.5 A 3A TYPICAL RDS(on) (N-Channel) = 50 mΩ


    Original     		PDF STS3C3F30L STS3C3F30L

    ZXMC3A16DN8

    Abstract: ZXMC3A16DN8TA ZXMC3A16DN8TC zxmc 3a16
    Text: ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure


    Original     		PDF ZXMC3A16DN8 ZXMC3A16DN8TA ZXMC3A16DN8 ZXMC3A16DN8TA ZXMC3A16DN8TC zxmc 3a16

    Untitled

    Abstract: No abstract text available
    Text: ZXMC3A18DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel = V BR DSS= 30V : RDS(on)= 0.025 ; ID= 7.6A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.035 ; ID= -6.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that


    Original     		PDF ZXMC3A18DN8 ZXMC3A18DN8TA ZXMC3A18DN8TC

    MS-012AA

    Abstract: ZXMC3A17DN8 ZXMC3A17DN8TA ZXMC3A17DN8TC
    Text: ZXMC3A17DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel : V BR DSS= 30V : RDS(on)= 0.050 ; ID= 5.4A P-Channel : V(BR)DSS= -30V : RDS(on)= 0.070 ; ID= -4.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that


    Original     		PDF ZXMC3A17DN8 MS-012AA ZXMC3A17DN8 ZXMC3A17DN8TA ZXMC3A17DN8TC

    Untitled

    Abstract: No abstract text available
    Text: ZXMC3A17DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel : V BR DSS= 30V : RDS(on)= 0.050 ; ID= 5.4A P-Channel : V(BR)DSS= -30V : RDS(on)= 0.070 ; ID= -4.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that


    Original     		PDF ZXMC3A17DN8

    ZXMC3A16DN8

    Abstract: ZXMC3A16DN8TA ZXMC3A16DN8TC zxmc 3a16 135s3
    Text: ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure


    Original     		PDF ZXMC3A16DN8 ZXMC3A16DN8TA ZXMC3A16DN8 ZXMC3A16DN8TA ZXMC3A16DN8TC zxmc 3a16 135s3

    P Channel STripFET

    Abstract: STripFET STS3DPFS30 mosfet p channel 30v 3a
    Text: STS3DPFS30 P - CHANNEL 30V - 0.065Ω - 3A - S0-8 MOSFET PLUS SCHOTTKY RECTIFIER  STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on ID 30V 0.09Ω 3A SCHOTTKY IF(AV) V RRM V F(MAX) 3A 30V 0.51V SO-8 DESCRIPTION: This product associates the latest low voltage


    Original     		PDF STS3DPFS30 P Channel STripFET STripFET STS3DPFS30 mosfet p channel 30v 3a

    27BSC

    Abstract: ZXMC3A18DN8 ZXMC3A18DN8TA ZXMC3A18DN8TC
    Text: ZXMC3A18DN8 ADVANCE INFORMATION COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel = V BR DSS= 30V : RDS(on)= 0.025 ; ID= 7.6A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.035 ; ID= -6.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that


    Original     		PDF ZXMC3A18DN8 27BSC ZXMC3A18DN8 ZXMC3A18DN8TA ZXMC3A18DN8TC

    STripFET

    Abstract: STS3DPFS30
    Text: STS3DPFS30 P - CHANNEL 30V - 0.065Ω - 3A - S0-8 MOSFET PLUS SCHOTTKY RECTIFIER  STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on ID 30V 0.09Ω 3A SCHOTTKY IF(AV) V RRM V F(MAX) 3A 30V 0.51V SO-8 DESCRIPTION: This product associates the latest low voltage


    Original     		PDF STS3DPFS30 STripFET STS3DPFS30

    ZXMC3A17DN8

    Abstract: MS-012AA ZXMC3A17DN8TA ZXMC3A17DN8TC
    Text: ZXMC3A17DN8 ADVANCE INFORMATION COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel : V BR DSS= 30V : RDS(on)= 0.050 ; ID= 5.4A P-Channel : V(BR)DSS= -30V : RDS(on)= 0.070 ; ID= -4.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that


    Original     		PDF ZXMC3A17DN8 ZXMC3A17DN8 MS-012AA ZXMC3A17DN8TA ZXMC3A17DN8TC

    mosfet "marking code 44" sot-23-6

    Abstract: APM2706C MOSFET N SOT-23 STD-020C apm27 AB SOT-23-6
    Text: APM2706C Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel D1 S1 30V/3A, D2 RDS(ON)= 55mΩ(typ.) @ VGS= 10V RDS(ON)= 80mΩ(typ.) @ VGS= 4.5V • G1 P-Channel S2 G2 -30V/-2.2A, Top View of SOT-23-6 RDS(ON)= 100mΩ(typ.) @ VGS= -10V


    Original     		PDF APM2706C -30V/-2 OT-23-6 mosfet "marking code 44" sot-23-6 APM2706C MOSFET N SOT-23 STD-020C apm27 AB SOT-23-6

    Untitled

    Abstract: No abstract text available
    Text: STB70NFS03L N-channel - 30V - 0.0075Ω - 70A D2PAK STripFET Power MOSFET plus schottky rectifier General features Type VDSS RDS on ID STB70NFS03L 30V <0.0095Ω 70A Schottky IF(AV) VRRM VF(MAX) 3A 30V 0.51V u d o 3 1 r P e D²PAK Description This product associates a Power MOSFET of the


    Original     		PDF STB70NFS03L STB70NFS03L

    Untitled

    Abstract: No abstract text available
    Text: STB70NFS03L N-channel - 30V - 0.0075Ω - 70A D2PAK STripFET Power MOSFET plus schottky rectifier General features Type VDSS RDS on ID STB70NFS03L 30V <0.0095Ω 70A Schottky IF(AV) VRRM VF(MAX) 3A 30V 0.51V u d o 3 1 r P e D²PAK Description This product associates a Power MOSFET of the


    Original     		PDF STB70NFS03L

    STS3DPFS30L

    Abstract: No abstract text available
    Text: STS3DPFS30L  P - CHANNEL 30V - 0.13Ω - 3A S0-8 MOSFET PLUS SCHOTTKY RECTIFIER  STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on 30V <0.16Ω 3A SCHOTTKY IF (A V) V RRM V F(M AX) 3A 30V 0.51V ID SO-8 DESCRIPTION: This product associates the latest low voltage


    Original     		PDF STS3DPFS30L STS3DPFS30L

    STS3DPFS30

    Abstract: mosfet p channel 30v 3a
    Text: STS3DPFS30  P - CHANNEL 30V - 0.065Ω - 3A - S0-8 MOSFET PLUS SCHOTTKY RECTIFIER  STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on 30V 0.09Ω 3A SCHOTTKY IF (A V) V RRM V F(M AX) 3A 30V 0.51V ID SO-8 DESCRIPTION: This product associates the latest low voltage


    Original     		PDF STS3DPFS30 STS3DPFS30 mosfet p channel 30v 3a

    P-Channel MOSFET code L 1A

    Abstract: APM4532 APM4532J MS-001 STD-020C
    Text: APM4532J Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 30V/4.3A, RDS(ON) =35mΩ(typ.) @ VGS = 10V RDS(ON) =60mΩ(typ.) @ VGS = 4.5V • P-Channel Top View of PDIP − 8 -30V/-3A, RDS(ON) =85mΩ(typ.) @ VGS =-10V RDS(ON) =135mΩ(typ.) @ VGS =-4.5V


    Original     		PDF APM4532J -30V/-3A, P-Channel MOSFET code L 1A APM4532 APM4532J MS-001 STD-020C

    STS4C3F30L

    Abstract: JESD97
    Text: STS4C3F30L N-channel 30V - 0.044Ω - 5A - SO-8 STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F30L (n-ch) 30V <0.055Ω 5A STS4C3F30L (p-ch) 30V <0.165Ω 3A • Low threshold drive ■ Standard outline for easy automated surface mount assembly


    Original     		PDF STS4C3F30L STS4C3F30L JESD97

    JESD97

    Abstract: STS4C3F30L STS4C3F30L,
    Text: STS4C3F30L N-channel 30V - 0.044Ω - 5A - SO-8 STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F30L (n-ch) 30V <0.055Ω 5A STS4C3F30L (p-ch) 30V <0.165Ω 3A • Low threshold drive ■ Standard outline for easy automated surface mount assembly


    Original     		PDF STS4C3F30L JESD97 STS4C3F30L STS4C3F30L,

    Untitled

    Abstract: No abstract text available
    Text: ZXMC3A18DN8 Complementary 30V enhancement mode MOSFET Summary N-Channel = V BR DSS= 30V : RDS(on)= 0.025⍀; ID= 7.6A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.035⍀; ID= -6.3A Description D1 This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of


    Original     		PDF ZXMC3A18DN8 D-81541