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    MOSFET OF HIGH POWER RATING Search Results

    MOSFET OF HIGH POWER RATING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET OF HIGH POWER RATING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640-P Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer


    Original     		PDF UF640-P 18OHM, UF640-P O-220 QW-R502-A17

    AN705

    Abstract: schematic diagram reverse forward motor Si9910DJ Si9910 Si9910DY VN50300 VN50300T motordrive circuits fast recovering diodes for spike protection application note gate driver with bootstrap capac
    Text: AN705 Si9910 Adaptive Power MOSFET Driver Improves Performance in High-Voltage Half-Bridge Applications Jim Harnden The Si9910 is the first of a new generation of “adaptive” power MOSFET gate drivers. These adaptive drivers provide protection for the power MOSFET switching


    Original     		PDF AN705 Si9910 Si9910 15-Feb-94 Si9910DJ AN705 schematic diagram reverse forward motor Si9910DY VN50300 VN50300T motordrive circuits fast recovering diodes for spike protection application note gate driver with bootstrap capac

    AN705

    Abstract: application note gate driver with bootstrap capac motordrive circuits Si9910DJ fast recovering diodes for spike protection Si9910 Si9910DY VN50300 VN50300T INTRINSIC SAFE CIRCUIT
    Text: AN705 Si9910 Adaptive Power MOSFET Driver Improves Performance in High-Voltage Half-Bridge Applications Jim Harnden The Si9910 is the first of a new generation of “adaptive” power MOSFET gate drivers. These adaptive drivers provide protection for the power MOSFET switching


    Original     		PDF AN705 Si9910 Si9910 Si9910DJ Si9910DY AN705 application note gate driver with bootstrap capac motordrive circuits fast recovering diodes for spike protection VN50300 VN50300T INTRINSIC SAFE CIRCUIT

    UF1010EL

    Abstract: UF1010EL-TA3-T UF1010E UF1010EL TO-220
    Text: UNISONIC TECHNOLOGIES CO., LTD UF1010E Power MOSFET HEXFET POWER MOSFET „ DESCRIPTION Using high technology of UTC, UTC UF1010E has the features such as: low RDS ON , fast switching, and low gate charge. Like features of all HEFET power MOSFET devices’ features,


    Original     		PDF UF1010E UF1010E UF1010EL UF1010EG UF1010E-TA3-T UF1010EL-TA3-T QW-R502-306 UF1010EL UF1010EL-TA3-T UF1010EL TO-220

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original     		PDF UF640 18OHM, UF640 QW-R502-066

    uf640

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original     		PDF UF640 18OHM, UF640 QW-R502-066

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640V Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET „ DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original     		PDF UF640V 18OHM, UF640V QW-R502-916,

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET „ DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original     		PDF UF640 18OHM, UF640 QW-R502-066

    Si9910DJ

    Abstract: Si9910 mosfet triggering circuit motor forward reverse diagram schematic diagram motor siliconix MOSFET applications book fast high side driver fast recovering diodes for spike protection HIGH-VOLTAGE HALF BRIDGE DRIVER MA28
    Text: AN705 Vishay Siliconix Si9910 Adaptive Power MOSFET Driver Improves Performance in High-Voltage Half-Bridge Applications The Si9910 is the first of a new generation of “adaptive” power MOSFET gate drivers. These adaptive drivers provide protection for the power MOSFET switching element while


    Original     		PDF AN705 Si9910 15-Feb-94 Si9910DY Si9910DJ mosfet triggering circuit motor forward reverse diagram schematic diagram motor siliconix MOSFET applications book fast high side driver fast recovering diodes for spike protection HIGH-VOLTAGE HALF BRIDGE DRIVER MA28

    UF1010EL

    Abstract: UF1010EL-TA3-T uf1010e
    Text: UNISONIC TECHNOLOGIES CO., LTD UF1010E Power MOSFET N-CHANNEL POWER MOSFET „ DESCRIPTION Using high technology of UTC, UTC UF1010E has the features such as: low RDS ON , fast switching, and low gate charge. Like features of all power MOSFET devices’ features, UTC


    Original     		PDF UF1010E UF1010E UF1010EL-TA3-T UF1010EG-TA3-T UF1010EL-TF1-T UF1010EG-TF1-T O-220 O-220F1 QW-R502-306 UF1010EL

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF1010E Power MOSFET N-CHANNEL POWER MOSFET „ DESCRIPTION Using high technology of UTC, UTC UF1010E has the features such as: low RDS ON , fast switching, and low gate charge. Like features of all power MOSFET devices’ features, UTC


    Original     		PDF UF1010E UF1010E UF1010EL-TA3-T UF1010EG-TA3-T UF1010EL-TF1-T UF1010EG-TF1-T UF1010EL-TF2-T UF1010EG-TF2-T QW-R502-306

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF1010E Power MOSFET N-CHANNEL POWER MOSFET „ DESCRIPTION Using high technology of UTC, UTC UF1010E has the features such as: low RDS ON , fast switching, and low gate charge. Like features of all power MOSFET devices’ features, UTC


    Original     		PDF UF1010E UF1010E UF1010EL-TA3-T UF1010EG-TA3-T UF1010EL-TF1-T UF1010EG-TF1-T QW-R502-306

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF1010E Power MOSFET N-CHANNEL POWER MOSFET  1 DESCRIPTION 1 TO-220 Using high technology of UTC, UTC UF1010E has the features such as: low RDS ON , fast switching, and low gate charge. Like features of all power MOSFET devices’ features, UTC


    Original     		PDF UF1010E O-220 UF1010E O-220F2 O-263 O-220F1 UF1010EL-at QW-R502-306

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 1 1 TO-252 „ DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original     		PDF UF640 O-252 O-263 UF640 O-220 O-220F O-220F2 QW-R502-066

    tc4426

    Abstract: TC4428CPA TC4426COA TC4426CPA TC4427 TC4428
    Text: 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4426 TC4427 TC4427 TC4428 TC4428 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ The TC4426/4427/4428 are improved versions of the earlier TC426/427/428 family of buffer/drivers with which


    Original     		PDF TC4426 TC4427 TC4428 TC4426/4427/4428 TC426/427/428 tc4426 TC4428CPA TC4426COA TC4426CPA TC4427 TC4428

    rd22

    Abstract: 7103 AAT7103 AAT7103IAS-T1 52G1
    Text: AAT7103 25V N-Channel Power MOSFET General Description Features The AAT7103 25 V N-Channel Power MOSFET is a member of AnalogicTech's TrenchDMOS product family. Using the ultra-high density proprietary TrenchDMOS technology, the product demonstrates high power handling and small size.


    Original     		PDF AAT7103 AAT7103 AAT7103IAS-T1 rd22 7103 AAT7103IAS-T1 52G1

    SC70JW-8

    Abstract: AAT9560 AAT9560IJS-T1 1000 V N-channel mosfet A204V rg-6
    Text: AAT9560 30V N-Channel Power MOSFET General Description Features The AAT9560 30V N-Channel Power MOSFET is a member of AnalogicTech's TrenchDMOS product family. Using the ultra-high density proprietary TrenchDMOS technology, this product demonstrates high power handling and small size.


    Original     		PDF AAT9560 AAT9560 SC70JW-8 SC70JW-8 AAT9560IJS-T1 048REF AAT9560IJS-T1 1000 V N-channel mosfet A204V rg-6

    9055

    Abstract: AAT9055 AAT9055INY-T1
    Text: AAT9055 30V N-Channel Power MOSFET General Description Features The AAT9055 30 V N-Channel Power MOSFET is a member of AnalogicTech's TrenchDMOS product family. Using the ultra-high density proprietary TrenchDMOS technology, this product demonstrates high power handling and small size.


    Original     		PDF AAT9055 AAT9055 O-252 AAT9055INY-T1 9055 AAT9055INY-T1

    7128

    Abstract: AAT7128 AAT7128IAS-T1 Rd32
    Text: AAT7128 30V N-Channel Power MOSFET General Description Features The AAT7128 30V N-Channel Power MOSFET is a member of AnalogicTech's TrenchDMOS product family. Using the ultra-high density proprietary TrenchDMOS technology, this product demonstrates high power handling and small size.


    Original     		PDF AAT7128 AAT7128 AAT7128IAS-T1 7128 AAT7128IAS-T1 Rd32

    sop-8 marking 9121

    Abstract: AAT9121 AAT9121IAS-B1 AAT9121IAS-T1 ADVANCED ANALOGIC TECHNOLOGY 30V vgs A204V
    Text: AAT9121 30V N-Channel Power MOSFET General Description Features The AAT9121 30V N-Channel Power MOSFET is a member of AnalogicTech's TrenchDMOS product family. Using the ultra-high density proprietary TrenchDMOS technology, this product demonstrates high power handling and small size.


    Original     		PDF AAT9121 AAT9121 1000mm sop-8 marking 9121 AAT9121IAS-B1 AAT9121IAS-T1 ADVANCED ANALOGIC TECHNOLOGY 30V vgs A204V

    AAT7126

    Abstract: AAT7126IAS-T1
    Text: AAT7126 30V N-Channel Power MOSFET General Description Features The AAT7126 30V N-Channel Power MOSFET is a member of AnalogicTech's TrenchDMOS product family. Using the ultra-high density proprietary TrenchDMOS technology, this product demonstrates high power handling and small size.


    Original     		PDF AAT7126 AAT7126 AAT7126IAS-T1 AAT7126IAS-T1

    AAT9060

    Abstract: AAT9060INY-T1 90602
    Text: AAT9060 30V N-Channel Power MOSFET General Description Features The AAT9060 30 V N-Channel Power MOSFET is a member of AnalogicTech's TrenchDMOS product family. Using the ultra-high density proprietary TrenchDMOS technology, this product demonstrates high power handling and small size.


    Original     		PDF AAT9060 AAT9060 O-252 AAT9060INY-T1 AAT9060INY-T1 90602

    A204V

    Abstract: sop-8 marking 9121 AAT9121 AAT9121IAS-B1 AAT9121IAS-T1
    Text: AAT9121 30V N-Channel Power MOSFET General Description Features The AAT9121 30V N-Channel Power MOSFET is a member of AnalogicTech's TrenchDMOS product family. Using the ultra-high density proprietary TrenchDMOS technology, this product demonstrates high power handling and small size.


    Original     		PDF AAT9121 AAT9121 AAT9121IAS-B1 AAT9121IAS-T1 A204V sop-8 marking 9121 AAT9121IAS-B1 AAT9121IAS-T1

    ufn720

    Abstract: UFN723 UFN721 15AQ
    Text: UFN720 UFN721 UFN722 UFN723 POWER MOSFET TRANSISTORS 400 Volt, 1.8 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosum and a high transconductance. The Unitrode power MOSFET features all of the advantages of MOS technology such as


    OCR Scan     		PDF UFN720 UFN721 UFN722 UFN723 UFN720 UFN721 UFN722 UFN723 15AQ