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    MOSFET N60 Search Results

    MOSFET N60 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf7n60

    Abstract: n60 equivalent POWER MOSFET Rise Time 1 ns IRF7 p channel mosfet 100v 7A, 100v fast recovery diode CMT07N60 J 115 mosfet single HIGH SPEED POWER MOSFET mosfet nA idss
    Text: IRF7N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ‹ Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ‹ Avalanche Energy Specified without degrading performance over time. In addition, this


    Original     		PDF IRF7N60 O-220 O-220FP irf7n60 n60 equivalent POWER MOSFET Rise Time 1 ns IRF7 p channel mosfet 100v 7A, 100v fast recovery diode CMT07N60 J 115 mosfet single HIGH SPEED POWER MOSFET mosfet nA idss

    N60S5

    Abstract: triac ansteuerung 3.5kw pfc smps 450W 2kw mosfet mos sot223, 300v SPN-25 mosfet 1000v smps 5kw 2kw pfc welding
    Text: COOLMOS TM COOLMOSTM von SIEMENS* Ein Quantensprung in der Hochvolt MOSFET-Technologie macht Anwenderträume wahr Lorenz L., März M., Deboy G. Power-MOSFET zählen seit nunmehr 20 Jahren zu den bedeutendsten Komponenten in der Transistorwelt. Mit einem Marktvolumen von 1.4 Mrd. US$ in 1997 und einem prognostizierten


    Original     		PDF

    N6040

    Abstract: No abstract text available
    Text: DMN6040SK3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max 60V 40mΩ @ V GS = 10V 50mΩ @ V GS = 4.5V ID T C = +25°C 20A 16A Description This new generation MOSFET has been designed to minimize the on- • • • Low Input Capacitance


    Original     		PDF DMN6040SK3 AEC-Q101 DS35733 N6040

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN6068SE ADVANCE INFORMATION 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on ID TA = +25C • 100% Unclamped Inductive Switch (UIS) test in production  Low on-resistance 68m @ VGS= 10V 5.6A 


    Original     		PDF DMN6068SE DS32033

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN6068SE ADVANCE INFORMATION 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on ID TA = +25C • 100% Unclamped Inductive Switch (UIS) test in production  Low on-resistance 68mΩ @ VGS= 10V 5.6A 


    Original     		PDF DMN6068SE AEC-Q101 DS32033

    Untitled

    Abstract: No abstract text available
    Text: DMN6070SFCL 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCE INFORMATION 60V Features and Benefits RDS(ON) max ID max TA = +25°C • Typical off board profile of 0.5mm - ideally suited for thin 85 mΩ @ VGS = 10V 3.0A • applications


    Original     		PDF DMN6070SFCL AEC-Q101 DS36502

    Untitled

    Abstract: No abstract text available
    Text: DMN6070SFCL 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCE INFORMATION 60V Features and Benefits RDS(ON) max ID max TA = +25°C • Typical off board profile of 0.5mm - ideally suited for thin 85 mΩ @ VGS = 10V 3.0A • applications


    Original     		PDF DMN6070SFCL AEC-Q101 DS36502

    DMN6068

    Abstract: DMN6068SE DMN6068SE-13
    Text: A Product Line of Diodes Incorporated DMN6068SE ADVANCE INFORMATION 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 68mΩ @ VGS= 10V 100% Unclamped Inductive Switch (UIS) test in production • Low on-resistance


    Original     		PDF DMN6068SE AEC-Q101 J-STD-020 DS32033 DMN6068 DMN6068SE DMN6068SE-13

    N6068

    Abstract: DMN6068 n606
    Text: A Product Line of Diodes Incorporated DMN6068SE ADVANCE INFORMATION 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 68mΩ @ VGS= 10V 100% Unclamped Inductive Switch (UIS) test in production • Low on-resistance


    Original     		PDF DMN6068SE AEC-Q101 DS32033 522-DMN6068SE-13 DMN6068SE-13 N6068 DMN6068 n606

    01N60

    Abstract: BFR 965 01N6 dpak 369C NDD01N60
    Text: NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ABSOLUTE MAXIMUM RATINGS TJ = 25°C unless otherwise noted Drain−to−Source Voltage


    Original     		PDF NDD01N60, NDT01N60 NDD01N60/D 01N60 BFR 965 01N6 dpak 369C NDD01N60

    Untitled

    Abstract: No abstract text available
    Text: DMN6070SFCL 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCE INFORMATION 60V Features and Benefits RDS(ON) max ID max TA = +25°C • Typical off board profile of 0.5mm - ideally suited for thin 85 mΩ @ VGS = 10V 3.0A  applications


    Original     		PDF DMN6070SFCL AEC-Q101 DS36502

    DMN6068

    Abstract: N6068 DMN6068SE DMN6068SE-13 diode Marking code A2
    Text: A Product Line of Diodes Incorporated DMN6068SE ADVANCE INFORMATION 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 68mΩ @ VGS= 10V 100% Unclamped Inductive Switch (UIS) test in production • Low on-resistance


    Original     		PDF DMN6068SE AEC-Q101 J-STD-020 DS32033 DMN6068 N6068 DMN6068SE DMN6068SE-13 diode Marking code A2

    DMN6068LK3

    Abstract: No abstract text available
    Text: DMN6068LK3 Green Product Summary V BR DSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits ID RDS(on) TA = +25°C 68mΩ @ VGS = 10V 8.5A 100mΩ @ VGS = 4.5V 7.0A • 100% Unclamped Inductive Switch (UIS) test in production • Low on-resistance


    Original     		PDF DMN6068LK3 AEC-Q101 J-STD-020 DS32057 DMN6068LK3

    NDD01N60

    Abstract: No abstract text available
    Text: NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ABSOLUTE MAXIMUM RATINGS TJ = 25°C unless otherwise noted Drain−to−Source Voltage


    Original     		PDF NDD01N60, NDT01N60 NDD01N60/D NDD01N60

    DMN6069SE

    Abstract: No abstract text available
    Text: DMN6069SE 60V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary V BR DSS 60V Features • 100% Unclamped Inductive Switch (UIS) test in production RDS(ON) max ID TA = +25°C  Fast switching speed  Low on-resistance 69mΩ @ VGS = 10V


    Original     		PDF DMN6069SE AEC-Q101 DS36474 DMN6069SE

    DMN6068LK3

    Abstract: DMN6068LK3-13 DMN6068
    Text: A Product Line of Diodes Incorporated DMN6068LK3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 68mΩ @ VGS= 10V 8.5A 60V 100mΩ @ VGS= 4.5V 7.0A • 100% Unclamped Inductive Switch (UIS) test in production


    Original     		PDF DMN6068LK3 AEC-Q101 O252-3L DS32057 DMN6068LK3 DMN6068LK3-13 DMN6068

    N6066SD

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN6066SSD ADVANCE INFORMATION 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C • Low on-resistance • Fast switching speed • 100% Unclamped Inductive Switch (UIS) test in production


    Original     		PDF DMN6066SSD AEC-Q101 DS32109 N6066SD

    DMN6066SSD

    Abstract: N6066SD DMN6066SSD-13 1E-32
    Text: A Product Line of Diodes Incorporated DMN6066SSD ADVANCE INFORMATION 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) TA = 25°C 66mΩ @ VGS= 10V 4.4A 97mΩ @ VGS= 4.5V 3.6A 60V Low on-resistance •


    Original     		PDF DMN6066SSD AEC-Q101 DS32109 DMN6066SSD N6066SD DMN6066SSD-13 1E-32

    DMN6068LK3

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN6068LK3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS ID RDS(on) TA = 25°C 68mΩ @ VGS = 10V 8.5A 60V 100mΩ @ VGS = 4.5V 7.0A • 100% Unclamped Inductive Switch (UIS) test in production


    Original     		PDF DMN6068LK3 AEC-Q101 O252-3L DS32057 DMN6068LK3

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN6066SSD ADVANCE INFORMATION 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) TA = 25°C 66mΩ @ VGS = 10V 4.4A 97mΩ @ VGS = 4.5V 3.6A 60V Low on-resistance •


    Original     		PDF DMN6066SSD AEC-Q101 DS32109

    DS3205

    Abstract: DMN6068LK3
    Text: A Product Line of Diodes Incorporated DMN6068LK3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 68mΩ @ VGS = 10V 8.5A 60V 100mΩ @ VGS = 4.5V 7.0A • 100% Unclamped Inductive Switch (UIS) test in production


    Original     		PDF DMN6068LK3 AEC-Q101 O252-3L DS32057 DS3205 DMN6068LK3

    N6068L

    Abstract: DMN6068LK3-13 DMN6068LK3 J-STD-020D DMN6068
    Text: A Product Line of Diodes Incorporated DMN6068LK3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 68mΩ @ VGS= 10V 8.5A 100mΩ @ VGS= 4.5V


    Original     		PDF DMN6068LK3 O252-3L N6068L DMN6068LK3-13 DMN6068LK3 J-STD-020D DMN6068

    N6040SD

    Abstract: d2 marking N6040 N6040s
    Text: DMN6040SSD 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary V BR DSS Features and Benefits • • • • • • ID RDS(on) max TA = 25°C 40mΩ @ VGS = 10V 5.0A 55mΩ @ VGS = 4.5V 4.4A 60V Low Input Capacitance Low On-Resistance


    Original     		PDF DMN6040SSD AEC-Q101 DS35673 N6040SD d2 marking N6040 N6040s

    dt6001

    Abstract: mosfet n60a
    Text: SSW/I1N60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ I B V DSS - 6 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 p A Max. @ Vw = 600V


    OCR Scan     		PDF SSW/I1N60A 300nF dt6001 mosfet n60a