Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET N SOT323 Search Results

    MOSFET N SOT323 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET N SOT323 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK3018

    Abstract: 3018G 2SK3018 UTC
    Text: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ DESCRIPTION The UTC 2SK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is


    Original     		PDF UK3018 2SK3018 400mA UK3018G-AE2-R UK3018G-AL3-R OT-23-3 OT-323 QW-R502-313 3018G 2SK3018 UTC

    NX3020NAK

    Abstract: No abstract text available
    Text: NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 30 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF NX3020NAKW OT323 SC-70) NX3020NAK

    Untitled

    Abstract: No abstract text available
    Text: SO T3 23 NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF NX3020NAKW OT323 SC-70)

    Untitled

    Abstract: No abstract text available
    Text: NX7002AKW 60 V, single N-channel Trench MOSFET 11 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF NX7002AKW OT323 SC-70)

    placeholder for manufacturing site code

    Abstract: No abstract text available
    Text: PMF87EN 30 V, single N-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMF87EN OT323 SC-70) placeholder for manufacturing site code

    3018G

    Abstract: UK3018G Device Marking 313
    Text: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ DESCRIPTION The UTC UK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is particularly suited for low


    Original     		PDF UK3018 UK3018 400mA UK3018G-AE2-R UK3018G-AL3-R OT-23-3 OT-323 QW-R502-313 3018G UK3018G Device Marking 313

    2.5V "Power MOSFET"

    Abstract: MOSFET IGSS 100A n-channel mosfet SOT-23 2SK3018 2SK3018 SOT-23
    Text: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ 3 DESCRIPTION SOT-23 The UTC 2SK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is


    Original     		PDF UK3018 OT-23 2SK3018 OT-323 400mA UK3018L UK3018G UK3018-AE3-R UK3018-ALt QW-R502-313 2.5V "Power MOSFET" MOSFET IGSS 100A n-channel mosfet SOT-23 2SK3018 SOT-23

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 02N06Z Preliminary Power MOSFET 0.2A, 60V SILICON N-CHANNEL MOSFET „ DESCRIPTION The UTC 02N06Z is a silicon N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge.


    Original     		PDF 02N06Z 02N06Z 200mA 02N06ZL-AL3-R 02N06ZG-AL3-R OT-323 QW-R502-906

    2N7002PW

    Abstract: No abstract text available
    Text: 2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002PW OT323 SC-70) AEC-Q101 50itions 771-2N7002PW-115 2N7002PW

    Untitled

    Abstract: No abstract text available
    Text: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF 2N7002BKW OT323 SC-70) AEC-Q101

    2N7002BKW

    Abstract: 2n7002bk TRANSISTOR SMD MARKING CODE 50 006-AA
    Text: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF 2N7002BKW OT323 SC-70) AEC-Q101 771-2N7002BKW115 2N7002BKW 2n7002bk TRANSISTOR SMD MARKING CODE 50 006-AA

    2N7002PW

    Abstract: smd code marking WV transistor sc-70 marking codes SOT323 MOSFET P
    Text: 2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002PW OT323 SC-70) AEC-Q101 gate-s13 2N7002PW smd code marking WV transistor sc-70 marking codes SOT323 MOSFET P

    Untitled

    Abstract: No abstract text available
    Text: 2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002PW OT323 SC-70) AEC-Q101

    MARKING SMD x9

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 smd code marking WV 2n7002bkw transistor smd code marking nc
    Text: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF 2N7002BKW OT323 SC-70) AEC-Q101 MARKING SMD x9 MOSFET TRANSISTOR SMD MARKING CODE A1 smd code marking WV 2n7002bkw transistor smd code marking nc

    Untitled

    Abstract: No abstract text available
    Text: SO T3 23 PMF77XN 30 V, single N-channel Trench MOSFET Rev. 1 — 27 March 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMF77XN OT323 SC-70)

    Untitled

    Abstract: No abstract text available
    Text: SO T3 23 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF BSS138BKW OT323 SC-70) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: SO T3 23 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF BSS138BKW OT323 SC-70) AEC-Q101

    bss138bkw

    Abstract: No abstract text available
    Text: SO T3 23 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF BSS138BKW OT323 SC-70) AEC-Q101 771-BSS138BKW115 BSS138BKW

    Untitled

    Abstract: No abstract text available
    Text: SO T3 23 NX3008NBKW 30 V, 350 mA N-channel Trench MOSFET Rev. 1 — 2 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF NX3008NBKW OT323 SC-70) AEC-Q101

    NX7002AKW

    Abstract: No abstract text available
    Text: SO T3 23 NX7002AKW 60 V, single N-channel Trench MOSFET Rev. 1 — 1 March 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF NX7002AKW OT323 SC-70) NX7002AKW

    PMF63UN

    Abstract: No abstract text available
    Text: SO T3 23 PMF63UN 20 V, single N-channel Trench MOSFET Rev. 1 — 22 March 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMF63UN OT323 SC-70) PMF63UN

    AF1332N

    Abstract: No abstract text available
    Text: AF1332N N-Channel Enhancement Mode Power MOSFET „ Features „ Description - Simple Gate Drive - 2KV ESD Rating Per MIL-STD-883D - Small Package Outline (SOT323) The advanced power MOSFET provides the designer with the best combination of fast switching, low


    Original     		PDF AF1332N MIL-STD-883D) OT323) 600mA 1332N OT323 AF1332N

    mosfet W03

    Abstract: FDS6690A
    Text: F/MRCHII-D S E M IC O N D U C T O R April 1999 t FDS6690A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been


    OCR Scan     		PDF FDS6690A mosfet W03

    S6680A

    Abstract: FDS6680A
    Text: January 1998 FAIRCHILD SEM ICONDUCTO R PRELIMINARY tm FDS6680A Single N-Channel, Logic Level, PowerTrench, MOSFET General Description Features These N-Channel Logic Level MOSFET are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to


    OCR Scan     		PDF FDS6680A S6680A