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    MOSFET MODULE Search Results

    MOSFET MODULE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG250YD2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET MODULE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


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    2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS PDF

    N mosfet 250v 600A

    Abstract: mosfet 600V 100A ST mosfet 600v MOSFET Module mosfet j 114 QJQ0224005 M5 DIODE mosfet low idss mosfet 600V 100A mosfet 600a 600v
    Text: QJQ0224005 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 240A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: ? ?


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    QJQ0224005 FS40SM-5 N mosfet 250v 600A mosfet 600V 100A ST mosfet 600v MOSFET Module mosfet j 114 QJQ0224005 M5 DIODE mosfet low idss mosfet 600V 100A mosfet 600a 600v PDF

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 49mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


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    APTMC60TLM55CT3AG PDF

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    Abstract: No abstract text available
    Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 110mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


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    APTMC60TL11CT3AG PDF

    800V 40A mosfet

    Abstract: mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG
    Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 55mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


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    APTMC60TLM55CT3AG 800V 40A mosfet mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG PDF

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 98mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


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    APTMC60TL11CT3AG PDF

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 20mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


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    APTMC60TLM20CT3AG PDF

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 17mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


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    APTMC60TLM20CT3AG PDF

    N mosfet 250v 600A

    Abstract: mosfet 200A mosfet 600V 100A mosfet 600v "MOSFET Module" mosfet 100a 600v 3150 mosfet FS40SM-5 QJQ0220001 mosfet low idss
    Text: QJQ0220001 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 200A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: • •


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    QJQ0220001 FS40SM-5 N mosfet 250v 600A mosfet 200A mosfet 600V 100A mosfet 600v "MOSFET Module" mosfet 100a 600v 3150 mosfet QJQ0220001 mosfet low idss PDF

    SiC POWER MOSFET

    Abstract: sic MOSFET APTMC60TLM14CAG
    Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode


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    APTMC60TLM14CAG SiC POWER MOSFET sic MOSFET APTMC60TLM14CAG PDF

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    Abstract: No abstract text available
    Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode


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    APTMC60TLM14CAG PDF

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode


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    APTMC60TLM14CAG PDF

    CMLM0574

    Abstract: PB CMLM0574 mosfet 4812 4812 mosfet CMLM0584 schottky diode
    Text: Product Brief CMLM0574 Multi Discrete Module 30V, 450mA, N-Channel MOSFET and 40V, 500mA Schottky diode SOT-563 Typical Electrical Characteristic: Description: MOSFET: The CENTRAL SEMICONDUCTOR CMLM0574 is a Multi Discrete Module consisting of a single N-Channel Enhancement Mode MOSFET


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    CMLM0574 450mA, 500mA OT-563 CMLM0574 OT-563 450mA 500mA 200mA, 350mV PB CMLM0574 mosfet 4812 4812 mosfet CMLM0584 schottky diode PDF

    CMLM8205

    Abstract: PB CMLM8205 mosfet 4812 marking 34 diode SCHOTTKY sot-563 MOSFET D1 P-Channel Enhancement MOSFET module 4812 mosfet "Schottky Diode" Schottky Diode power mosfet 500 A
    Text: Product Brief CMLM8205 Multi Discrete Module 50V, 280mA, P-Channel MOSFET and 40V, 500mA Schottky Diode SOT-563 Typical Electrical Characteristic: Description: MOSFET: The CENTRAL SEMICONDUCTOR CMLM8205 is a Multi Discrete Module consisting of a single P-Channel Enhancement Mode MOSFET


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    CMLM8205 280mA, 500mA OT-563 CMLM8205 OT-563 100mA 21x9x9 27x9x17 20x18x5 PB CMLM8205 mosfet 4812 marking 34 diode SCHOTTKY sot-563 MOSFET D1 P-Channel Enhancement MOSFET module 4812 mosfet "Schottky Diode" Schottky Diode power mosfet 500 A PDF

    Untitled

    Abstract: No abstract text available
    Text: SiC MOSFET-based Power Modules Utilizing Split Output Topology for Superior Dynamic Behavior Michael Frisch, Vincotech GmbH, Biberger Str. 93, 82008 Unterhaching Germany 1. Abstract The body diode reverse recovery charge of a SiC MOSFET is lower than that of an Si MOSFET,


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    PDF

    FCA50CC50

    Abstract: IG2U
    Text: MOSFET MODULE FCA50CC50 UL;E76102 (M) FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.(2 devices are serial connected with a fast recovery diode (trr≦100ns)reverse connected across each MOSFET.) The mounting base of the


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    FCA50CC50 E76102 FCA50CC50 trr100nsreverse 30max 31max VDSS500V 50msec-10sec 00A/s IG2U PDF

    FCA50CC50

    Abstract: IG2U
    Text: MOSFET MODULE FCA50CC50 UL;E76102 (M) FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.(2 devices are serial connected with a fast recovery diode (trr≦100ns)reverse connected across each MOSFET.) The mounting base of the


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    FCA50CC50 E76102 FCA50CC50 trr100nsreverse 30max 31max 50sec-10sec 50msec-10sec 00A/s IG2U PDF

    FCA75CC50

    Abstract: No abstract text available
    Text: MOSFET MODULE FCA75CC50 UL;E76102 (M) FCA75CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current. (2 devices are serial connected with a fast recovery diode (trr≦100ns)reverse connected across each MOSFET.) The mounting base of the


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    FCA75CC50 E76102 FCA75CC50 trr100nsreverse 30max 31max VDSS500V 50msec-10sec 1msec-50msec PDF

    FCA50CC50

    Abstract: RL4R FBA50CA45 FBA50CA50 FBA75CA45 FBA75CA50 FCA75CC50 SF100 107506
    Text: MOSFET MODULE FCA50CC50 UL;E76102 (M) FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.(2 devices are serial connected with a fast recovery diode (trr≦100ns)reverse connected across each MOSFET.) The mounting base of the


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    FCA50CC50 E76102 FCA50CC50 trr100nsreverse 30max 31max 50msec10sec 50sec50msec RL4R FBA50CA45 FBA50CA50 FBA75CA45 FBA75CA50 FCA75CC50 SF100 107506 PDF

    inverters circuit diagram igbt

    Abstract: MOSFET FOR 50HZ SWITCHING APPLICATIONS power inverters circuit diagram
    Text: PSDM-6 Driver Modules www.schurter.com/pg86 DC/DC Converter for IGBT- or MOSFET Driver Modules 600V IGBT/MOSFET Driver modules with integrated DC/DC converter PSDM-6O Data transfer via transformer PSDM-6T (Data transfer via optocoupler) Description – Driver module for safe driving of IGBT or MOSFET power


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    com/pg86 PSDM-0DN1-5040 inverters circuit diagram igbt MOSFET FOR 50HZ SWITCHING APPLICATIONS power inverters circuit diagram PDF

    4422 mosfet

    Abstract: MOSFET 4420 Matching MOSFET Drivers to MOSFETs parallel mosfet 4469 mosfet use of zener diode 4420 mosfet mosfet 4468 4422 dual mosfet irf4501
    Text: APPLICATION NOTE 30 MATCHING MOSFET DRIVERS TO MOSFETs MATCHING MOSFET DRIVERS TO MOSFETs AN-30 INTRODUCTION V TelCom offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/MOSFET to the application.


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    AN-30 TC4424 4422 mosfet MOSFET 4420 Matching MOSFET Drivers to MOSFETs parallel mosfet 4469 mosfet use of zener diode 4420 mosfet mosfet 4468 4422 dual mosfet irf4501 PDF

    Untitled

    Abstract: No abstract text available
    Text: NCP5338 Integrated Driver and MOSFET The NCP5338 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5338


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    NCP5338 NCP5338 NCP5338/D PDF

    HG62G

    Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
    Text: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2


    OCR Scan
    PF0025 PF0026 NMT900, PF0027 PF0030 PF0031 NMT900 PF0032 PF0040 PF0042 HG62G HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035 PDF

    MOSFET Modules

    Abstract: 2MI100F-025 "MOSFET Modules" 2MI50S-050 2M150F-050 2MI100F-050 2MI50F-050 M210 2MI100F
    Text: COLLMER SEMICONDUCTOR INC 34E I> 2 2 3 â 7 cia GG01553 T ' 3 ^ BICOL - i 5 FUJI MOSFET M odules 250V 500V MOSFET Module advantages: • Increase carrier frequencies • Improve control accuracy MOSFET Modules are used on: • Switch-mode power supplies SMPS


    OCR Scan
    20kHz) 120VAC 240VAC 20kHz 25-35kg MOSFET Modules 2MI100F-025 "MOSFET Modules" 2MI50S-050 2M150F-050 2MI100F-050 2MI50F-050 M210 2MI100F PDF