9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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N mosfet 250v 600A
Abstract: mosfet 600V 100A ST mosfet 600v MOSFET Module mosfet j 114 QJQ0224005 M5 DIODE mosfet low idss mosfet 600V 100A mosfet 600a 600v
Text: QJQ0224005 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 240A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: ? ?
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QJQ0224005
FS40SM-5
N mosfet 250v 600A
mosfet 600V 100A ST
mosfet 600v
MOSFET Module
mosfet j 114
QJQ0224005
M5 DIODE
mosfet low idss
mosfet 600V 100A
mosfet 600a 600v
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Untitled
Abstract: No abstract text available
Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 49mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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APTMC60TLM55CT3AG
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Untitled
Abstract: No abstract text available
Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 110mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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APTMC60TL11CT3AG
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800V 40A mosfet
Abstract: mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG
Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 55mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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APTMC60TLM55CT3AG
800V 40A mosfet
mosfet 1200V 40A
MOSFET 40A 600V
APTMC60TLM55CT3AG
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Untitled
Abstract: No abstract text available
Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 98mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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APTMC60TL11CT3AG
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Untitled
Abstract: No abstract text available
Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 20mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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APTMC60TLM20CT3AG
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Untitled
Abstract: No abstract text available
Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 17mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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APTMC60TLM20CT3AG
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N mosfet 250v 600A
Abstract: mosfet 200A mosfet 600V 100A mosfet 600v "MOSFET Module" mosfet 100a 600v 3150 mosfet FS40SM-5 QJQ0220001 mosfet low idss
Text: QJQ0220001 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 200A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: • •
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QJQ0220001
FS40SM-5
N mosfet 250v 600A
mosfet 200A
mosfet 600V 100A
mosfet 600v
"MOSFET Module"
mosfet 100a 600v
3150 mosfet
QJQ0220001
mosfet low idss
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SiC POWER MOSFET
Abstract: sic MOSFET APTMC60TLM14CAG
Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
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APTMC60TLM14CAG
SiC POWER MOSFET
sic MOSFET
APTMC60TLM14CAG
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Untitled
Abstract: No abstract text available
Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
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Untitled
Abstract: No abstract text available
Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
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APTMC60TLM14CAG
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CMLM0574
Abstract: PB CMLM0574 mosfet 4812 4812 mosfet CMLM0584 schottky diode
Text: Product Brief CMLM0574 Multi Discrete Module 30V, 450mA, N-Channel MOSFET and 40V, 500mA Schottky diode SOT-563 Typical Electrical Characteristic: Description: MOSFET: The CENTRAL SEMICONDUCTOR CMLM0574 is a Multi Discrete Module consisting of a single N-Channel Enhancement Mode MOSFET
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CMLM0574
450mA,
500mA
OT-563
CMLM0574
OT-563
450mA
500mA
200mA,
350mV
PB CMLM0574
mosfet 4812
4812 mosfet
CMLM0584
schottky diode
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CMLM8205
Abstract: PB CMLM8205 mosfet 4812 marking 34 diode SCHOTTKY sot-563 MOSFET D1 P-Channel Enhancement MOSFET module 4812 mosfet "Schottky Diode" Schottky Diode power mosfet 500 A
Text: Product Brief CMLM8205 Multi Discrete Module 50V, 280mA, P-Channel MOSFET and 40V, 500mA Schottky Diode SOT-563 Typical Electrical Characteristic: Description: MOSFET: The CENTRAL SEMICONDUCTOR CMLM8205 is a Multi Discrete Module consisting of a single P-Channel Enhancement Mode MOSFET
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CMLM8205
280mA,
500mA
OT-563
CMLM8205
OT-563
100mA
21x9x9
27x9x17
20x18x5
PB CMLM8205
mosfet 4812
marking 34 diode SCHOTTKY
sot-563 MOSFET D1
P-Channel Enhancement MOSFET module
4812 mosfet
"Schottky Diode"
Schottky Diode
power mosfet 500 A
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Untitled
Abstract: No abstract text available
Text: SiC MOSFET-based Power Modules Utilizing Split Output Topology for Superior Dynamic Behavior Michael Frisch, Vincotech GmbH, Biberger Str. 93, 82008 Unterhaching Germany 1. Abstract The body diode reverse recovery charge of a SiC MOSFET is lower than that of an Si MOSFET,
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FCA50CC50
Abstract: IG2U
Text: MOSFET MODULE FCA50CC50 UL;E76102 （M） FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.（2 devices are serial connected with a fast recovery diode （trr≦100ns）reverse connected across each MOSFET.） The mounting base of the
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FCA50CC50
E76102
FCA50CC50
trr100nsreverse
30max
31max
VDSS500V
50msec-10sec
00A/s
IG2U
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FCA50CC50
Abstract: IG2U
Text: MOSFET MODULE FCA50CC50 UL;E76102 （M） FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.（2 devices are serial connected with a fast recovery diode （trr≦100ns）reverse connected across each MOSFET.） The mounting base of the
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FCA50CC50
E76102
FCA50CC50
trr100nsreverse
30max
31max
50sec-10sec
50msec-10sec
00A/s
IG2U
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FCA75CC50
Abstract: No abstract text available
Text: MOSFET MODULE FCA75CC50 UL;E76102 （M） FCA75CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current. （2 devices are serial connected with a fast recovery diode （trr≦100ns）reverse connected across each MOSFET.） The mounting base of the
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FCA75CC50
E76102
FCA75CC50
trr100nsreverse
30max
31max
VDSS500V
50msec-10sec
1msec-50msec
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FCA50CC50
Abstract: RL4R FBA50CA45 FBA50CA50 FBA75CA45 FBA75CA50 FCA75CC50 SF100 107506
Text: MOSFET MODULE FCA50CC50 UL;E76102 （M） FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.（2 devices are serial connected with a fast recovery diode （trr≦100ns）reverse connected across each MOSFET.） The mounting base of the
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FCA50CC50
E76102
FCA50CC50
trr100nsreverse
30max
31max
50msec10sec
50sec50msec
RL4R
FBA50CA45
FBA50CA50
FBA75CA45
FBA75CA50
FCA75CC50
SF100
107506
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inverters circuit diagram igbt
Abstract: MOSFET FOR 50HZ SWITCHING APPLICATIONS power inverters circuit diagram
Text: PSDM-6 Driver Modules www.schurter.com/pg86 DC/DC Converter for IGBT- or MOSFET Driver Modules 600V IGBT/MOSFET Driver modules with integrated DC/DC converter PSDM-6O Data transfer via transformer PSDM-6T (Data transfer via optocoupler) Description – Driver module for safe driving of IGBT or MOSFET power
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com/pg86
PSDM-0DN1-5040
inverters circuit diagram igbt
MOSFET FOR 50HZ SWITCHING APPLICATIONS
power inverters circuit diagram
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4422 mosfet
Abstract: MOSFET 4420 Matching MOSFET Drivers to MOSFETs parallel mosfet 4469 mosfet use of zener diode 4420 mosfet mosfet 4468 4422 dual mosfet irf4501
Text: APPLICATION NOTE 30 MATCHING MOSFET DRIVERS TO MOSFETs MATCHING MOSFET DRIVERS TO MOSFETs AN-30 INTRODUCTION V TelCom offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/MOSFET to the application.
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AN-30
TC4424
4422 mosfet
MOSFET 4420
Matching MOSFET Drivers to MOSFETs
parallel mosfet
4469 mosfet
use of zener diode
4420 mosfet
mosfet 4468
4422 dual mosfet
irf4501
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Untitled
Abstract: No abstract text available
Text: NCP5338 Integrated Driver and MOSFET The NCP5338 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5338
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NCP5338
NCP5338
NCP5338/D
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HG62G
Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
Text: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2
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PF0025
PF0026
NMT900,
PF0027
PF0030
PF0031
NMT900
PF0032
PF0040
PF0042
HG62G
HG71G154
hg62g051
HG62G019
HG71G063
HG71G
HG71G030
HG62g014
HG51B
HG62G035
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MOSFET Modules
Abstract: 2MI100F-025 "MOSFET Modules" 2MI50S-050 2M150F-050 2MI100F-050 2MI50F-050 M210 2MI100F
Text: COLLMER SEMICONDUCTOR INC 34E I> 2 2 3 â 7 cia GG01553 T ' 3 ^ BICOL - i 5 FUJI MOSFET M odules 250V 500V MOSFET Module advantages: • Increase carrier frequencies • Improve control accuracy MOSFET Modules are used on: • Switch-mode power supplies SMPS
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20kHz)
120VAC
240VAC
20kHz
25-35kg
MOSFET Modules
2MI100F-025
"MOSFET Modules"
2MI50S-050
2M150F-050
2MI100F-050
2MI50F-050
M210
2MI100F
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