Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KF50N06P TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KF50N06P
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D 92 M - 02 DIODE
Abstract: D 92 M - 03 DIODE KF60N06P c 92 M - 02 DIODE
Text: SEMICONDUCTOR KF60N06P TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KF60N06P
Fig13.
Fig14.
Fig15.
D 92 M - 02 DIODE
D 92 M - 03 DIODE
KF60N06P
c 92 M - 02 DIODE
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KF50N06
Abstract: KF50N06P 330mJ
Text: SEMICONDUCTOR KF50N06P TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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Original
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KF50N06P
Fig13.
Fig14.
Fig15.
KF50N06
KF50N06P
330mJ
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KF7N50
Abstract: KF7N50F KF7N50P 16nC
Text: SEMICONDUCTOR KF7N50P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N50P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KF7N50P/F
KF7N50P
above25
dI/dt100A/,
KF7N50
KF7N50F
KF7N50P
16nC
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KF9N50
Abstract: kf9n50p KF9N50F
Text: SEMICONDUCTOR KF9N50P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF9N50P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KF9N50P/F
KF9N50P
above25
dI/dt100A/,
KF9N50
kf9n50p
KF9N50F
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kf5n53
Abstract: No abstract text available
Text: SEMICONDUCTOR KF5N53F N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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KF5N53F
dI/dt100A/,
kf5n53
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transistor KF5n50fza
Abstract: mosfet KF5N50 KF5N50F KF5N50FS
Text: SEMICONDUCTOR KF5N50FZA/FSA N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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150ns
KF5N50FSA)
300ns
KF5N50FZA)
KF5N50FZA/FSA
dI/dt100A/,
transistor KF5n50fza
mosfet KF5N50
KF5N50F
KF5N50FS
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kf13n50
Abstract: 4413a KF13N50F
Text: SEMICONDUCTOR KF13N50P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF13N50P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KF13N50P/F
KF13N50P
IS13A,
dI/dt200A/
kf13n50
4413a
KF13N50F
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KF2N60L TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode
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KF2N60L
dI/dt100A/,
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kf5n53
Abstract: KF5N53FS TD 2012
Text: SEMICONDUCTOR KF5N53FS N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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150ns
KF5N53FS
dI/dt100A/,
kf5n53
KF5N53FS
TD 2012
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PDF
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KF6N60
Abstract: KF6N60F 16nC KF6N60P
Text: SEMICONDUCTOR KF6N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF6N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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Original
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KF6N60P/F
KF6N60P
above25
EAR300V,
dI/dt100A/,
KF6N60
KF6N60F
16nC
KF6N60P
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kf12n60
Abstract: KF12N60P kf12n60f IS12A
Text: SEMICONDUCTOR KF12N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF12N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KF12N60P/F
KF12N60P
IS12A,
dI/dt200A/,
kf12n60
KF12N60P
kf12n60f
IS12A
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KF6N60
Abstract: KF6N60I KF6N60D
Text: SEMICONDUCTOR KF6N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF6N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KF6N60D/I
KF6N60D
above25
dI/dt100A/,
KF6N60
KF6N60I
KF6N60D
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KF70N06
Abstract: KF70N06F
Text: SEMICONDUCTOR KF70N06P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF70N06P It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications FEATURES ・VDSS= 60V, ID= 70A KF70N06P
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KF70N06P/F
KF70N06P
KF70N06P)
KF70N06P
dI/dt200A/,
KF70N06
KF70N06F
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KF7N50
Abstract: KF7N50D KF7N50I
Text: SEMICONDUCTOR KF7N50D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N50D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KF7N50D/I
KF7N50D
above25
dI/dt100A/,
KF7N50
KF7N50D
KF7N50I
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KF2N60L TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description B A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode
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KF2N60L
dI/dt100A/,
KF2N60
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KF1N60
Abstract: KF1N60I
Text: SEMICONDUCTOR KF1N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF1N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode
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KF1N60D/I
KF1N60D
dI/dt100A/,
KF1N60
KF1N60I
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KF5N40
Abstract: No abstract text available
Text: SEMICONDUCTOR KF5N40D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N40D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Convertor and
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KF5N40D/I
KF5N40D
KF5N40
KF5N40
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KF3N60
Abstract: KF3N60I
Text: SEMICONDUCTOR KF3N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF3N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KF3N60D/I
KF3N60D
dI/dt100A/,
KF3N60
KF3N60I
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kf3n40
Abstract: KF3N40I KF3N40D fast reverse recovery time of LED
Text: SEMICONDUCTOR KF3N40D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF3N40D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and
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KF3N40D/I
KF3N40D
dI/dt200A/,
KF3N40
KF3N40I
KF3N40D
fast reverse recovery time of LED
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KF9N40D
Abstract: No abstract text available
Text: SEMICONDUCTOR KF9N40D TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Convertor and
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KF9N40D
KF9N40
KF9N40D
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KF1N60L TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description B A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode
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KF1N60L
100us
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KF1N60L TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description B A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode
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KF1N60L
100us
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Untitled
Abstract: No abstract text available
Text: u i r LTC1147-3.3 LTC1147-5/LTC1147L n TECHNOLOGY High Efficiency Step-Down Switching Regulator Controllers KflTUfKS D€SCRIPTIOf1 • Very High Efficiency: Over 95% Possible ■ Wide V|N Range: 3.5V* to 16V ■ Current Mode Operation for Excellent Line and Load
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OCR Scan
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LTC1147-3
LTC1147-5/LTC1147L
160jjA
S51fl4bfl
5C176
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