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    MOSFET MARKING CODE C0 Search Results

    MOSFET MARKING CODE C0 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET MARKING CODE C0 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking c08

    Abstract: CMLDM8002A CMLDM8002AJ MARKING CODE 24 TRANSISTOR
    Text: Central CMLDM8002A CMLDM8002AJ SURFACE MOUNT PICOminiTM DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MARKING CODE: CMLDM8002A: C08 CMLDM8002AJ: CJ8 TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8002A and CMLDM8002AJ are dual chip Enhancement-mode


    Original     		PDF CMLDM8002A CMLDM8002AJ OT-563 CMLDM8002A: CMLDM8002AJ: CMLDM8002A CMLDM8002AJ CMLDM8002AJ, 500mA marking c08 MARKING CODE 24 TRANSISTOR

    specifications of MOSFET

    Abstract: on semiconductor marking code sot MOSFET 2KV marking code sot563 C08 marking Small Signal MOSFETs all mosfet equivalent book p-channel mosfet P-channel MOSFET 50V, 10 A rds code l02
    Text: PRODUCT announcement Small Signal MOSFETs TLP Tiny Leadless Package SOT-563 SOT-883L TLM621H Single or Dual (Single) (Single) features • Single and Dual configurations Sample Devices • N-Channel and P-Channel devices available • Dual MOSFET with ESD protection (CMLDM7003)


    Original     		PDF OT-563 OT-883L TLM621H CMLDM7003) 280mA, OT-563 CMLDM7003 CMLDM8002A CMLDM7002A specifications of MOSFET on semiconductor marking code sot MOSFET 2KV marking code sot563 C08 marking Small Signal MOSFETs all mosfet equivalent book p-channel mosfet P-channel MOSFET 50V, 10 A rds code l02

    TSM4NB60CP

    Abstract: No abstract text available
    Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		PDF TSM4NB60 O-220 ITO-220 O-251 TSM4NB60 O-252 TSM4NB60CP

    Untitled

    Abstract: No abstract text available
    Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		PDF TSM4NB60 O-220 ITO-220 O-251 TSM4NB60 O-252

    mosfet marking code c0

    Abstract: TSM4NB65
    Text: TSM4NB65 650V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω)(max) ID (A) 650 3.37 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		PDF TSM4NB65 O-220 ITO-220 O-251 TSM4NB60 O-252 mosfet marking code c0 TSM4NB65

    Untitled

    Abstract: No abstract text available
    Text: TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 900 5.1 @ VGS =10V 1.25 General Description TO-251 (IPAK) The TSM3N90 TO-252 (DPAK) N-Channel Power MOSFET is produced by new advance planar process. This


    Original     		PDF TSM3N90 O-220 ITO-220 O-251 O-252

    TO-252 N-channel MOSFET

    Abstract: 600v 4A mosfet
    Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4N60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		PDF TSM4N60 O-220 ITO-220 O-251 O-252 TSM4N60 TO-252 N-channel MOSFET 600v 4A mosfet

    Untitled

    Abstract: No abstract text available
    Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		PDF TSM4NB60 O-220 ITO-220 O-251 TSM4NB60 O-252

    DIODE D12

    Abstract: No abstract text available
    Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		PDF TSM4NB60 O-220 ITO-220 O-251 O-252 TSM4NB60 TSM4NB60CH TSM4NB60CP TSM4NB60CZ O-251 DIODE D12

    mosfet Marking Code b3

    Abstract: diode c12 marking c12
    Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		PDF TSM4NB60 O-220 ITO-220 O-251 O-252 TSM4NB60 TSM4NB60CH TSM4NB60CP TSM4NB60CZ O-251 mosfet Marking Code b3 diode c12 marking c12

    DIODE F10

    Abstract: TSM4N60CZ TO-252 N-channel MOSFET
    Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been


    Original     		PDF TSM4N60 O-220 ITO-220 O-251 O-252 TSM4N60 DIODE F10 TSM4N60CZ TO-252 N-channel MOSFET

    mosfet "marking code 44"

    Abstract: TSM2NB60CP
    Text: TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description TO-251 (IPAK) The TSM2NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		PDF TSM2NB60 O-220 ITO-220 O-251 O-252 TSM2NB60 TSM2NB60CH TSM2NB60CP TSM2NB60CZ O-251 mosfet "marking code 44"

    Untitled

    Abstract: No abstract text available
    Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		PDF TSM4NB60 O-220 ITO-220 O-251 O-252 TSM4NB60 TSM4NB60CH TSM4NB60CP TSM4NB60CZ O-251

    Untitled

    Abstract: No abstract text available
    Text: TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description TO-251 (IPAK) The TSM2NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		PDF TSM2NB60 O-220 ITO-220 O-251 TSM2NB60 O-252

    ITO-220

    Abstract: TSM4N60CH
    Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been


    Original     		PDF TSM4N60 O-220 ITO-220 O-251 O-252 TSM4N60 ITO-220 TSM4N60CH

    Untitled

    Abstract: No abstract text available
    Text: TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 500 V RDS(on) (max) 1.4 Ω Qg 25 nC TO-252 (DPAK) Features Block Diagram ● Low RDS(ON) 1.4Ω (Max.)


    Original     		PDF TSM6N50 ITO-220 O-251 O-252 TSM6N50CI 50pcs TSM6N50CP TSM6N50CH

    B11 marking code

    Abstract: 1A 700V MOSFET mosfet 700V 2A
    Text: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM2N70 O-220 O-251 O-252 TSM2N70 B11 marking code 1A 700V MOSFET mosfet 700V 2A

    TSM60N900CP

    Abstract: No abstract text available
    Text: TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology


    Original     		PDF TSM60N900 ITO-220 O-251 O-252 TSM60N900CI 50pcs TSM60N900CH 75pcs TSM60N900CP

    Untitled

    Abstract: No abstract text available
    Text: TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology


    Original     		PDF TSM60N900 ITO-220 O-251 O-252 TSM60N900CI 50pcs TSM60N900CH 75pcs

    Untitled

    Abstract: No abstract text available
    Text: TSM70N900 700V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology


    Original     		PDF TSM70N900 ITO-220 O-251 O-252 TSM70N900CI 50pcs TSM70N900CH 75pcs

    Untitled

    Abstract: No abstract text available
    Text: TSM70N600 700V, 8A, 0.6Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.6 Ω Qg 12.6 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology


    Original     		PDF TSM70N600 ITO-220 O-251 O-252 TSM70N600CI 50pcs TSM70N600CH 75pcs

    TSM60N600CP

    Abstract: No abstract text available
    Text: TSM60N600 600V, 8A, 0.6Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.6 Ω Qg 13 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology


    Original     		PDF TSM60N600 ITO-220 O-251 O-252 TSM60N600CI 50pcs TSM60N600CH 75pcs TSM60N600CP

    marking YD

    Abstract: BF999
    Text: Silicon N-Channel MOSFET Triode BF 999 For high-frequency stages up to 300 MHz, preferably in FM applications Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm tape BF 999 LB Q 62702-F38 Q62702-F1132 M axim um ratings Symbol


    OCR Scan     		PDF 62702-F38 Q62702-F1132 marking YD BF999

    K2094

    Abstract: marking 82T 0014b34 2SK2094 2SK2094F5
    Text: 2SK2094F5 Silicon N-channel MOSFET Features Dimensions Units : mm • available in C P T F5 package • p ackage marking: K2094-A-Q, w here ★ is hFE code and □ is lot num ber • low on-resistance 2SK2094 (C PT F5) • fast switching speed • w ide S O A (S a fe O perating A rea)


    OCR Scan     		PDF 2SK2094F5 K2094 2SK2094 0G14ti3b 0014b37 marking 82T 0014b34 2SK2094 2SK2094F5