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    MOSFET MARKING CODE B3 Search Results

    MOSFET MARKING CODE B3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET MARKING CODE B3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		PDF TSM4NB60 O-220 ITO-220 O-251 TSM4NB60 O-252

    DIODE D12

    Abstract: No abstract text available
    Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		PDF TSM4NB60 O-220 ITO-220 O-251 O-252 TSM4NB60 TSM4NB60CH TSM4NB60CP TSM4NB60CZ O-251 DIODE D12

    mosfet Marking Code b3

    Abstract: diode c12 marking c12
    Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		PDF TSM4NB60 O-220 ITO-220 O-251 O-252 TSM4NB60 TSM4NB60CH TSM4NB60CP TSM4NB60CZ O-251 mosfet Marking Code b3 diode c12 marking c12

    mosfet "marking code 44"

    Abstract: TSM2NB60CP
    Text: TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description TO-251 (IPAK) The TSM2NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		PDF TSM2NB60 O-220 ITO-220 O-251 O-252 TSM2NB60 TSM2NB60CH TSM2NB60CP TSM2NB60CZ O-251 mosfet "marking code 44"

    Untitled

    Abstract: No abstract text available
    Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		PDF TSM4NB60 O-220 ITO-220 O-251 O-252 TSM4NB60 TSM4NB60CH TSM4NB60CP TSM4NB60CZ O-251

    Untitled

    Abstract: No abstract text available
    Text: TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description TO-251 (IPAK) The TSM2NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		PDF TSM2NB60 O-220 ITO-220 O-251 TSM2NB60 O-252

    ITO-220

    Abstract: TSM4N60CH
    Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been


    Original     		PDF TSM4N60 O-220 ITO-220 O-251 O-252 TSM4N60 ITO-220 TSM4N60CH

    Untitled

    Abstract: No abstract text available
    Text: TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-252 DPAK TO-251 (IPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.4 @ VGS =10V 2.8 General Description The TSM6N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM6N50 ITO-220 O-252 O-251 TSM6N50 TSM6N50CI TSM6N50CP TSM6N50CH

    TSM6N50

    Abstract: No abstract text available
    Text: TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-252 DPAK TO-251 (IPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.4 @ VGS =10V 2.8 General Description The TSM6N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM6N50 ITO-220 O-252 O-251 TSM6N50 TSM6N50CI TSM6N50CP TSM6N50CH

    TSM2N60CP

    Abstract: MOSFET 600V 1A 2a 400v mosfet to-251 TSM2N60 TSM2N60CH
    Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original     		PDF TSM2N60 O-220 O-251 O-252 TSM2N60 TSM2N60CP MOSFET 600V 1A 2a 400v mosfet to-251 TSM2N60CH

    Untitled

    Abstract: No abstract text available
    Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original     		PDF TSM2N60 O-220 O-251 O-252 TSM2N60

    TSM2NB60

    Abstract: mosfet 600V 2A
    Text: Preliminary TSM2NB60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description The TSM2NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced


    Original     		PDF TSM2NB60 O-251 O-252 TSM2NB60CH 75pcs mosfet 600V 2A

    TSM4NB60CP

    Abstract: 600v 4A mosfet
    Text: Preliminary TSM4NB60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced


    Original     		PDF TSM4NB60 O-251 O-252 TSM4NB60CH 75pcs TSM4NB60CP 600v 4A mosfet

    marking diode f11

    Abstract: No abstract text available
    Text: TSM5ND50 500V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.5 @ VGS =10V 2.2 General Description The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS


    Original     		PDF TSM5ND50 O-251 O-252 TSM5ND50 marking diode f11

    RESISTOR NETWORK SMD 8 PIN array isolated 2512

    Abstract: 88em8011 MILMAX MACHINE marking code EA SMD MOSFET MOSFET marking smd NU Zener diode smd marking code nu prestera package marking semiconductor smd marking codes diode SMD MARKING CODE 606
    Text: Cover 88EM8011 Power Factor Correction Controller Datasheet Patents, Patents Pending Including US Pat. Nos. 7,266,001 and 7,292,013 Doc. No. MV-S104861-00, Rev. November 28, 2007 Marvell. Moving Forward Faster Document Classification: Proprietary 88EM8011


    Original     		PDF 88EM8011 MV-S104861-00, 88EM8011 MV-S104861-00 RESISTOR NETWORK SMD 8 PIN array isolated 2512 MILMAX MACHINE marking code EA SMD MOSFET MOSFET marking smd NU Zener diode smd marking code nu prestera package marking semiconductor smd marking codes diode SMD MARKING CODE 606

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 BUK7Y3R5-40E N-channel 40 V, 3.5 mΩ standard level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


    Original     		PDF BUK7Y3R5-40E LFPAK56

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 BUK9Y7R2-60E N-channel 60 V, 7.2 mΩ logic level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use


    Original     		PDF BUK9Y7R2-60E LFPAK56

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 BUK7Y7R2-60E N-channel 60 V, 7.2 mΩ standard level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


    Original     		PDF BUK7Y7R2-60E LFPAK56

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 BUK9Y14-80E N-channel 80 V,15 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use


    Original     		PDF BUK9Y14-80E LFPAK56

    72560

    Abstract: No abstract text available
    Text: LF PA K 56 BUK7Y25-60E N-channel 60 V, 25 mΩ standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


    Original     		PDF BUK7Y25-60E LFPAK56 72560

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon N Channel MOSFET Triode BF 999 For high-frequency stages up to 300 MHz, preferably in FM applications Type Marking Ordering Code tape and reel PinCtonfigu ation 1 2 3 Package1) BF 999 LB Q62702-F1132 G SOT-23 D S Maximum Ratings Parameter


    OCR Scan     		PDF Q62702-F1132 OT-23 T073H 400Mh fl235b05 PlS174fl fl235bGS

    transistor marking M06 GHZ

    Abstract: MSB014 dual gate mosfet in vhf amplifier SOT-143R sot143 code marking MS FET MARKING CODE sot143 Marking code MS M8B0J37 dual gate mosfet in uhf amplifier amplifier marking code D
    Text: Philips Sem iconductors b b S 3 T 2 M □ 0 7 4 2 ti b 3^*1 SI C3 Dual gate MOS-FETs _ NAPC/PHILIPS Product specification BF904; BF904R SEIHCOND b3E D FO R D E T A ILE D IN FO RM A TIO N SEE TH E LA TE S T ISSUE O F H AND BO O K SC06O R D A TA S H EET QUICK REFERENCE DATA


    OCR Scan     		PDF 0742tà BF904; BF904R SC06OR OT143 OT143R MSB014 M8B0J37 OT143) OT143R) transistor marking M06 GHZ MSB014 dual gate mosfet in vhf amplifier SOT-143R sot143 code marking MS FET MARKING CODE sot143 Marking code MS dual gate mosfet in uhf amplifier amplifier marking code D

    bf998 Mop

    Abstract: BF998 marking t54 PHILIPS MOSFET MARKING PHILIPS MOSFET mcb349 dual gate fet N-channel dual-gate MOS-FET for tv 75bEb DUAL GATE MOS-FET
    Text: b3E ]> Philips Semiconductors Data sheet status Preliminary specification date o f issue April 1991 FEATURES • Short channel transistor with high ratio lYfs 1/Cis • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor


    OCR Scan     		PDF 75bEb 6F998 OT143 bf998 Mop BF998 marking t54 PHILIPS MOSFET MARKING PHILIPS MOSFET mcb349 dual gate fet N-channel dual-gate MOS-FET for tv DUAL GATE MOS-FET

    BF991

    Abstract: 0R4S fet dual gate sot143 sot143 code marking MS sot143 Marking code MS
    Text: b3E » • b b 5 3 ^ 4 □□743DA T3G « S IC 3 NAPC/PHILIPS SEniCOND BF991 _ A_ FOR D E T A IL E D IN F O R M A T IO N SEE T H E LA TE S T ISSUE OF H A N D B O O K SC07 OR D A T A S H E E T SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 microminiature envelope w ith source and


    OCR Scan     		PDF BF991 OT143 OT143. BF991 0R4S fet dual gate sot143 sot143 code marking MS sot143 Marking code MS