DW01
Abstract: No abstract text available
Text: REV. 2.3 DW01+-DS-23_EN Datasheet DW01+ One Cell Lithium-ion/Polymer Battery Protection IC NOV. 2006 DW01+ Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742
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-DS-23
700REF
DW01
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Untitled
Abstract: No abstract text available
Text: FS326E+G-DS-10_EN Datasheet JAN 2007 F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 1.0 FS326E+G Fo One Cell Lithium-ion/Polymer Battery Protection IC FS326E+G Fo F P r R ro SC ef pe ’ er rti en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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FS326E
G-DS-10
700REF
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Untitled
Abstract: No abstract text available
Text: DW01A-DS-11_EN JUN 2010 FO Fo P R r R ro TU ef pe NE er rti ’ en es ce O nl y REV. 1.1 Datasheet DW01A One Cell Lithium-ion/Polymer Battery Protection IC DW01A FO Fo P R r R ro TU ef pe NE er rti ’ en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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DW01A-DS-11
DW01A
700REF
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Untitled
Abstract: No abstract text available
Text: STY60NM60 N-CHANNEL 600V - 0.050Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE STY60NM60 VDSS RDS on ID 600V < 0.055Ω 60 A TYPICAL RDS(on) = 0.050Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE
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STY60NM60
Max247
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Untitled
Abstract: No abstract text available
Text: JUL 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.1 FS325-DS-11_EN Datasheet FS325 One Cell Lithium-ion/Polymer Battery Protection IC FS325 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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FS325-DS-11
FS325
OT-23-5
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60T03
Abstract: 60t03g 60T0 60T03GI AP60T03GI
Text: AP60T03GI RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching BVDSS 30V RDS ON 12mΩ ID 45A G S Description Advanced Power MOSFETs from APEC provide the designer with
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AP60T03GI
O-220CFM
O-220CFM
60T03GI
60T03
60t03g
60T0
60T03GI
AP60T03GI
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Untitled
Abstract: No abstract text available
Text: DATE Jan.-18-'02 CHECKED Jan.-18-'02 CHECKED Jan.-18-'02 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without
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2SK3610-01
MS5F5121
H04-004-05
H04-004-03
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Untitled
Abstract: No abstract text available
Text: bq24150 bq24151 www.ti.com SLUS824A – JUNE 2008 – REVISED JANUARY 2010 Fully Integrated Switch-Mode One-Cell Li-Ion Charger with Full USB Compliance and USB-OTG Support Check for Samples: bq24150, bq24151 FEATURES 1 • • 2 • • • • • • •
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bq24150
bq24151
SLUS824A
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bcm62
Abstract: No abstract text available
Text: TPS61170 SLVS789C – NOVEMBER 2007 – REVISED APRIL 2011 www.ti.com 1.2A High Voltage Boost Converter in 2x2mm2 QFN Package Check for Samples: TPS61170 FEATURES 1 • • • • • • • • • • DESCRIPTION 3-V to 18-V Input Voltage Range High Output Voltage: Up to 38 V
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TPS61170
SLVS789C
TPS61170
bcm62
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A 4506 igbt
Abstract: HCNW4506 4506 mosfet 4506 mosfet inverter E55361 HCPL-0466 HCPL-4506 HCPL-5300 HCPL-5301 HCPL-J456
Text: Intelligent Power Module and Gate Drive Interface Optocouplers HCPL-4506 HCPL-J456 HCPL-0466 HCNW4506 Technical Data Features • Performance Specified for Common IPM Applications over Industrial Temperature Range: -40°C to 100°C • Fast Maximum Propagation
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HCPL-4506
HCPL-J456
HCPL-0466
HCNW4506
HCPL-4506/0466/J456
HCPL-4506
HCPL-0466
-VIORM-150
A 4506 igbt
HCNW4506
4506 mosfet
4506 mosfet inverter
E55361
HCPL-5300
HCPL-5301
HCPL-J456
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Advance Information Document Number: MC06XSD200 Rev. 1.0, 7/2013 Dual 6.0 mOhm High Side Switch 06XSD200 The 06XSD200 device is part of a 36 V dual high side switch product family with integrated control and a high number of protective and
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MC06XSD200
06XSD200
06XSD200
16-bit
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Abstract: No abstract text available
Text: Freescale Semiconductor Advance Information Document Number: MM912_634D1 Rev. 9.0, 12/2012 Integrated S12 Based Relay Driver with LIN MM912_634 48-PIN LQFP, 7.0 mm x 7.0 mm AE SUFFIX: Exposed Pad Option AP SUFFIX: Non Exposed Pad Option The MM912G634 48 kB and MM912H634 (64 kB) are
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634D1
48-PIN
MM912G634
MM912H634
HCS12
16-Bit
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Untitled
Abstract: No abstract text available
Text: MC9S12ZVH-Family Reference Manual HCS12 Microcontrollers MC9S12ZVHRMV1 Rev. 1.00 09/2013 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information
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MC9S12ZVH-Family
HCS12
MC9S12ZVHRMV1
S12ZCPU
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