MIC2042-1YM
Abstract: MIC2042 MIC2042-1BM MIC2042-1BTS MIC2042-2BM MIC2043 MIC2043-1BM MIC2043-2BM
Text: MIC2042/2043 Micrel MIC2042/2043 Single Channel, High Current, Low Voltage, Protected Power Distribution Switch General Description Features The MIC2042 and MIC2043 are high-side MOSFET switches optimized for general purpose power distribution applications
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MIC2042/2043
MIC2042
MIC2043
M0512-112603
MIC2042-1YM
MIC2042-1BM
MIC2042-1BTS
MIC2042-2BM
MIC2043-1BM
MIC2043-2BM
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Untitled
Abstract: No abstract text available
Text: MIC2042/2043 Micrel MIC2042/2043 Single Channel, High Current, Low Voltage, Protected Power Distribution Switch General Description Features The MIC2042 and MIC2043 are high-side MOSFET switches optimized for general purpose power distribution applications
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MIC2042/2043
MIC2042
MIC2043
M0512-112603
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M47F
Abstract: MIC2042 MIC2042-1BM MIC2042-1BTS MIC2042-2BM MIC2043 MIC2043-1BM MIC2043-2BM MIC2042-2 M0512-112603
Text: MIC2042/2043 Micrel MIC2042/2043 Single Channel, High Current, Low Voltage, Protected Power Distribution Switch General Description Features The MIC2042 and MIC2043 are high-side MOSFET switches optimized for general purpose power distribution applications
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MIC2042/2043
MIC2042
MIC2043
M0512-112603
M47F
MIC2042-1BM
MIC2042-1BTS
MIC2042-2BM
MIC2043-1BM
MIC2043-2BM
MIC2042-2
M0512-112603
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960-1215 MHz transistor 20W
Abstract: CAPACITOR 33PF electrolytic capacitor, .1uF 470uf, 35v electrolytic capacitor capacitor 470uf/63v 0912LD20 ADG419 capacitor 226 20V 47pf 55QT
Text: 0912LD20 20 Watts, 28 Volts Pulsed Avionics 960 to 1215 MHz LDMOS FET CASE OUTLINE 55QT Common Source GENERAL DESCRIPTION The 0912LD20 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 20Wpk of RF power from 960 to 1215 MHz.
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0912LD20
0912LD20
20Wpk
960-1215 MHz transistor 20W
CAPACITOR 33PF
electrolytic capacitor, .1uF
470uf, 35v electrolytic capacitor
capacitor 470uf/63v
ADG419
capacitor 226 20V
47pf
55QT
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UTM2054
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTM2054 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM2054 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in
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UTM2054
UTM2054
UTM2054L-AB3-R
UTM2054G-AB3-R
UTM2054L-AE3-R
UTM2054G-AE3-R
QW-R502-289
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electrolytic capacitor 470uF 63V
Abstract: electrolytic capacitor, .1uF electrolytic capacitor 470uf L494 chip capacitor c06
Text: 0912LD20 20 Watts, 28 Volts Pulsed Avionics 960 to 1215 MHz LDMOS FET CASE OUTLINE 55QT Common Source GENERAL DESCRIPTION The 0912LD20 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 20Wpk of RF power from 960 to 1215 MHz.
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0912LD20
0912LD20
20Wpk
electrolytic capacitor 470uF 63V
electrolytic capacitor, .1uF
electrolytic capacitor 470uf
L494
chip capacitor c06
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FOD8384
Abstract: No abstract text available
Text: FOD8384 2.5 A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP 5-Pin Features Description • Reliable and High-Voltage Insulation with Greater The FOD8384 is a 2.5 A output current gate drive optocoupler capable of driving medium-power IGBT/
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FOD8384
FOD8384
com/dwg/M0/M05B
dwg/PKG-M05AB
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APM2605
Abstract: APM2605C STD-020C p-Channel sot-23-6
Text: APM2605C P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-4.5A, RDS ON =43mΩ(typ.) @ VGS=10V RDS(ON)=60mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOT-23-6 Lead Free Available (RoHS Compliant)
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APM2605C
-30V/-4
OT-23-6
APM2605
APM2605
No-219°
MIL-STD-883D-2003
883D-1005
JESD-22-B,
APM2605C
STD-020C
p-Channel sot-23-6
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APM2305A
Abstract: STD-020C APM2305
Text: APM2305A P-Channel Enhancement Mode MOSFET Pin Description Features • -16V/-3.5A, RDS ON =60mΩ (typ.) @ VGS=-4.5V RDS(ON)=70mΩ (typ.) @ VGS=-2.5V RDS(ON)=83mΩ (typ.) @ VGS=-1.8V • • • Super High Dense Cell Design Top View of SOT-23 Reliable and Rugged
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APM2305A
-16V/-3
OT-23
APM2305
APM2305A
STD-020C
APM2305
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Transistor J182
Abstract: No abstract text available
Text: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest
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1011LD110A
1011LD110A
110Wpk
1030MHz
250mA,
Transistor J182
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APM2305
Abstract: J-STD-020A marking CODE 001 sot23 code JM
Text: APM2305 P-Channel Enhancement Mode MOSFET Features • Pin Description D -16V/-3.5A , RDS ON =60mΩ(typ.) @ VGS=-4.5V 3 RDS(ON)=70mΩ(typ.) @ VGS=-2.5V RDS(ON)=83mΩ(typ.) @ VGS=-1.8V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged
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APM2305
-16V/-3
OT-23
OT-23
APM2305
J-STD-020A
marking CODE 001
sot23 code JM
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1030MHz-1090MHz
Abstract: capacitor 470uf/63v 1000uf 63V electrolytic capacitor description of capacitor 470uf 63v capacitor 1000uf 63v j182 1000uf capacitor 470uf 16V tantalum capacitor 1000uF electrolytic capacitors 47uf/63V
Text: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest
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1011LD110A
1011LD110A
110Wpk
1030MHz
20Network
250mA,
1030MHz-1090MHz
capacitor 470uf/63v
1000uf 63V electrolytic capacitor
description of capacitor 470uf 63v
capacitor 1000uf 63v
j182
1000uf capacitor
470uf 16V tantalum
capacitor 1000uF
electrolytic capacitors 47uf/63V
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FET J134
Abstract: JMC5801 1000uf 63V electrolytic capacitor capacitor 470uf/63v 63V 470uf J134 MOSFET description of capacitor 470uf 63v 1060 fet 470uf 63v c06 capacitor
Text: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest
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1011LD110B
1011LD110B
110Wpk
1030MHz
20Network
250mA,
FET J134
JMC5801
1000uf 63V electrolytic capacitor
capacitor 470uf/63v
63V 470uf
J134 MOSFET
description of capacitor 470uf 63v
1060 fet
470uf 63v
c06 capacitor
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Untitled
Abstract: No abstract text available
Text: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest
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1011LD110B
1011LD110B
110Wpk
1030MHz
250mA,
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APM2605
Abstract: APM2605C JESD-22 J-STD-020D MARKING A104 SOT AAAX
Text: APM2605C P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-4.5A, D D S RDS ON =43mΩ(typ.) @ VGS=10V RDS(ON)=60mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design D D G Top View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available
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APM2605C
-30V/-4
OT-23-6
APM2605
JESD-22,
APM2605
APM2605C
JESD-22
J-STD-020D
MARKING A104 SOT
AAAX
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD UTM2054 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON The UTM2054 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in
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UTM2054
UTM2054
UTM205at
QW-R502-289
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ST7FAUDIO
Abstract: st7faudioar9 VN1160 st26025a ST26025 CAR ALTERNATOR REGULATOR testing guide L9777B st VN1160 vnh5180 L9777
Text: Automotive-grade semiconductor devices Selection guide July 2008 Analog Power MEMS Memories Microcontrollers www.st.com/automotive Moving towards a zero-defect capability STMicroelectronics applies an automotive-grade policy designed to deliver products which meet the
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SGAUTAPPL0608
ST7FAUDIO
st7faudioar9
VN1160
st26025a
ST26025
CAR ALTERNATOR REGULATOR testing guide
L9777B
st VN1160
vnh5180
L9777
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RT8205Lzqw
Abstract: RT8205MGQW rt8205 RT8205LGQW rt8205l rt8205lz RT8205MZQW TRANSISTOR marking code M05 DS8205 RT8205LZQW2
Text: RT8205L/M High Efficiency, Main Power Supply Controller for Notebook Computer General Description Features The RT8205L/M is a dual step-down, switch mode power supply controller generating logic-supply voltages in battery powered systems. It includes two Pulse-Width
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RT8205L/M
RT8205L/M
100mA
RT8205M)
DS8205L/M-05
RT8205Lzqw
RT8205MGQW
rt8205
RT8205LGQW
rt8205l
rt8205lz
RT8205MZQW
TRANSISTOR marking code M05
DS8205
RT8205LZQW2
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M05-fET
Abstract: No abstract text available
Text: IRFW/I710A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ B BVDss “ 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 uA M ax. @ VDS = 400V
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IRFW/I710A
M05-fET
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M05-fET
Abstract: power mosfet j 162 D943
Text: IRFP440A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 pA M ax. @ ■ B V dss ~ 500 V ^D S(on) =
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IRFP440A
ERFP440A
M05-fET
power mosfet j 162
D943
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Untitled
Abstract: No abstract text available
Text: SFH9240 Advanced Power M05FET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = -200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA Max. @ VDS= -200V
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M05FET
-200V
SFH9240
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DIODE A46
Abstract: No abstract text available
Text: PRODUCT ^Siltron CATÂLÛ' N-CHANNEL ENHANCEMENT M05 FET 1000V, 4.0A, 3.5Q SDF4N100 JAA SDF4N100 JAB FEATURES • RUGGED PACKAGE • H I - R E L CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS • LOW IR LOSSES • LOW THERMAL RESISTANCE
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SDF4N100
di/dt-100A/
DIODE A46
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ALQQ
Abstract: mosfet M05
Text: Æutran JM 8^4 3 H ,_ product 'i?T L X ^ S 1-3 4 3 5 ^ » FAX : F 4 0 7 * 8 6 3 - S94G N-CHANNEL ENHANCEMENT M05 FET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo It.(1) VDSS Dra in-Gate Vo 1tage VDGR (Rg s -1-OMo ) (1) Gate-Source Voltage
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IF-10A
i/dt-100A/
ALQQ
mosfet M05
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scr gate driver ic
Abstract: ic 555 timer gate drive scr scr driver ic for rectifier 3 phase T106-26 IR2151 DT 94-3 ic 555 timer gate drive mosfet electronic ballast with 555 ic igbt driver with 555 timer RC snubber mosfet design ELECTRONIC BALLAST 4 LAMP SCHEMATIC npn
Text: s s D esig n T ips D T 94-9 IX T K K N A T IO N A I. K l.C t J lU .R CORI*. A IT I.1 C A T 1 0N S K \ ;. 233 K A N S A S Vi'. I I. S K U N D O . C A 911245 I VI . <310>322-333l 1 A \ <.U 11 322-3332 MAXIMIZING THE LATCH IMMUNITY OF THE IR2151 & IR2152 IN BALLAST APPLICATIONS
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UHMJ22-333I
JIWJ22-3JJ2
IR2151
IR2152
IR2151
scr gate driver ic
ic 555 timer gate drive scr
scr driver ic for rectifier 3 phase
T106-26
IR2151 DT 94-3
ic 555 timer gate drive mosfet
electronic ballast with 555 ic
igbt driver with 555 timer
RC snubber mosfet design
ELECTRONIC BALLAST 4 LAMP SCHEMATIC npn
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