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    MOSFET LIB Search Results

    MOSFET LIB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET LIB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET


    Original     		PDF MRF9045MR1 RDMRF9045MR1

    motorola sps transistor

    Abstract: MRF21010
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line MRF21010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET DEVICE CHARACTERISTICS From Device Data Sheet


    Original     		PDF MRF21010 RDMRF21010NCDMA motorola sps transistor MRF21010

    HIP4080 amplifier circuit diagram class D

    Abstract: class d amplifier schematic hip4080 jfet normally off to220 mosfet L 3055 HIP4080 ITL5-1 dual jfet transistor array AN9404 oscilloscope schematic EAS 200 Switching Power supply with HIP4080A
    Text: No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an


    Original     		PDF AN9539 HIP2060, HIP2060 HIP4080 amplifier circuit diagram class D class d amplifier schematic hip4080 jfet normally off to220 mosfet L 3055 HIP4080 ITL5-1 dual jfet transistor array AN9404 oscilloscope schematic EAS 200 Switching Power supply with HIP4080A

    class d amplifier schematic hip4080

    Abstract: HIP4080 amplifier circuit diagram class D AN9404 AN9539 mosfet L 3055 1350P AN9405 0-60V HIP2060 MO-169AB
    Text: TM No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an


    Original     		PDF AN9539 HIP2060, HIP2060 class d amplifier schematic hip4080 HIP4080 amplifier circuit diagram class D AN9404 AN9539 mosfet L 3055 1350P AN9405 0-60V MO-169AB

    Inverter IRF1404

    Abstract: IRF1404 FET IRF1404 static characteristics of mosfet amp mosfet schematic circuit MOSFET dynamic parameters 3 phase mosfet drive schematic AN1040 bach AN-1040
    Text: Application Note AN-1040 System Simulation Using Power MOSFET QuasiDynamic Model Table of Contents Page Objective: To examine the Quasi-Dynamic model of power MOSFET and its effects on device thermal response . 1


    Original     		PDF AN-1040 Assure2000 Inverter IRF1404 IRF1404 FET IRF1404 static characteristics of mosfet amp mosfet schematic circuit MOSFET dynamic parameters 3 phase mosfet drive schematic AN1040 bach AN-1040

    class d amplifier schematic hip4080

    Abstract: hip4080 h-bridge gate drive schematics circuit HIP4080 amplifier circuit diagram class D oscilloscope schematic EAS 200 lem la 50p mosfet p 3055 RM1S HIP2060 mosfet L 3055 high power fet audio amplifier schematic
    Text: Harris Semiconductor No. AN9539 Harris Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an


    Original     		PDF AN9539 HIP2060, HIP2060 1-800-4-HARRIS class d amplifier schematic hip4080 hip4080 h-bridge gate drive schematics circuit HIP4080 amplifier circuit diagram class D oscilloscope schematic EAS 200 lem la 50p mosfet p 3055 RM1S mosfet L 3055 high power fet audio amplifier schematic

    G60N

    Abstract: Thermistor pspice mosfet mark code G4 ic 8870 ORCAD PSPICE BOOK AN1256 IRFZ34 MBR340 TC1410N 100n00
    Text: AN1256 Microchip’s Power MOSFET Driver Simulation Models Author: Cliff Ellison Microchip Technology Inc. Ron Wunderlich (Innovative Ideas and Design) INTRODUCTION The simulation models for Microchip’s power MOSFET drivers aid in the design and analysis of various circuits


    Original     		PDF AN1256 TC1410N DS01256A-page G60N Thermistor pspice mosfet mark code G4 ic 8870 ORCAD PSPICE BOOK AN1256 IRFZ34 MBR340 100n00

    IR3551

    Abstract: IR3550 DIODE SMD 44w 3551M GPU board diagram 210nH Waveform Clipping With Schottky "synchronous diode" SMD 1206 R1-10k MOSFET current sense amplifier
    Text: 50A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 94.5% at 1.2V  Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode  Input voltage VIN operating range up to 15V  Output voltage range from 0.25V up to 3.3V


    Original     		PDF IR3550 IR3553 IR3551 IR3551 3551M DIODE SMD 44w 3551M GPU board diagram 210nH Waveform Clipping With Schottky "synchronous diode" SMD 1206 R1-10k MOSFET current sense amplifier

    IR3550

    Abstract: No abstract text available
    Text: 60A Integrated PowIRstage FEATURES IR3550 DESCRIPTION • Peak efficiency up to 95% at 1.2V  Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode  Input voltage VIN operating range up to 15V  Output voltage range from 0.25V up to 3.3V


    Original     		PDF IR3550 IR3550 3550M

    DIODE SMD 44w

    Abstract: No abstract text available
    Text: 50A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 94.5% at 1.2V  Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode  Input voltage VIN operating range up to 15V  Output voltage range from 0.25V up to 3.3V


    Original     		PDF IR3550 IR3553 IR3551 IR3551 3551M DIODE SMD 44w

    MOSFET current sense amplifier

    Abstract: IR3550
    Text: 50A Integrated PowIRstage FEATURES IR3551 DESCRIPTION • Peak efficiency up to 94.5% at 1.2V  Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode  Input voltage VIN operating range up to 15V  Output voltage range from 0.25V up to 3.3V


    Original     		PDF IR3551 IR3551 3551M MOSFET current sense amplifier IR3550

    mosfet SMD 6 PIN IC FOR PWM

    Abstract: 210nH IR3553MTRPBF ir3550 IR3553
    Text: IR3553 40A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 93.2% at 1.2V  Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode  Input voltage VIN operating range up to 15V  Output voltage range from 0.25V up to 3.3V


    Original     		PDF IR3550 IR3551 IR3553 IR3553 3553M mosfet SMD 6 PIN IC FOR PWM 210nH IR3553MTRPBF

    Untitled

    Abstract: No abstract text available
    Text: IR3553 40A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 93.2% at 1.2V  Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode  Input voltage VIN operating range up to 15V  Output voltage range from 0.25V up to 3.3V


    Original     		PDF IR3553 IR3553 3553M

    IR3550M

    Abstract: IR3550 IR3550MTRPBF IR3550M#PBF IR3551
    Text: 60A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 95% at 1.2V  Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode  Input voltage VIN operating range up to 15V  Output voltage range from 0.25V up to 3.3V


    Original     		PDF IR3551 IR3553 IR3550 IR3550 3550M IR3550M IR3550MTRPBF IR3550M#PBF

    3558M

    Abstract: No abstract text available
    Text: 45A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 94.0% at 1.2V  Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode  Input voltage VIN operating range of 4.5V to 15V  Separate LVCC and HVCC from 4.5V to 13.2V to


    Original     		PDF IR3551 IR3558 IR3558 3558M 3558M

    Untitled

    Abstract: No abstract text available
    Text: IR3553 40A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 93.2% at 1.2V  Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode  Input voltage VIN operating range up to 15V  Output voltage range from 0.25V up to (VCC - 2.5V)


    Original     		PDF IR3550 IR3551 IR3553 IR3553 3553M

    Dell Latitude csx

    Abstract: pspice model list transistor pspice self-heating model list transistor PCIM 177 ronan eLED ORCAD PSPICE BOOK FDP038AN06A0 FDP038AN08A0 AN-7510
    Text: Application Note 7534 July 2004 A New PSPICE Electro-Thermal Subcircuit For Power MOSFETs Alain Laprade, Scott Pearson, Stan Benczkowski, Gary Dolny, Frank Wheatley Abstract An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This


    Original     		PDF

    ir3575

    Abstract: No abstract text available
    Text: IR3575 60A Exposed Top Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 95% at 1.2V • Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode • Input voltage VIN operating range up to 15V • Output voltage range from 0.25V to Vcc-2.5V, or to


    Original     		PDF IR3575 IR3575 3575M

    Spice Model for TMOS Power MOSFETs

    Abstract: scr spice model n mosfet depletion pspice model parameters transistor SMD making code 3f MOTOROLA smd SCR 707n AN1043 1E12 ABM11 BUZ103S
    Text: A Hierarchical Cross-Platform Physics Based MOSFET Model for SPICE and SABER By Jon Mark Hancock Siemens Microelectronics ABSTRACT A physics based MOSFET subcircuit model has been developed and implemented for SABER and several SPICE platforms, including PSPICE, IS-SPICE, and S-SPICE. The model is hierarchical in


    Original     		PDF

    SiF912EDZ

    Abstract: s2mc
    Text: SiF912EDZ Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.019 @ VGS = 4.5 V 10.7 0.0195 @ VGS = 4.0 V 10.5 0.022 @ VGS = 3.1 V 9.9 0.027 @ VGS = 2.5 V 9.0 D TrenchFETr Power MOSFET: 2.5-V Rated


    Original     		PDF SiF912EDZ SiF912EDZ-T1--E3 S-50131--Rev. 24-Jan-05 s2mc

    S-50131-Rev

    Abstract: 50131 SiF912EDZ
    Text: SiF912EDZ Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.019 @ VGS = 4.5 V 10.7 0.0195 @ VGS = 4.0 V 10.5 0.022 @ VGS = 3.1 V 9.9 0.027 @ VGS = 2.5 V 9.0 D TrenchFETr Power MOSFET: 2.5-V Rated


    Original     		PDF SiF912EDZ SiF912EDZ-T1--E3 08-Apr-05 S-50131-Rev 50131

    Untitled

    Abstract: No abstract text available
    Text: OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package


    OCR Scan     		PDF OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 300/jsec,

    Untitled

    Abstract: No abstract text available
    Text: April 1998 F/\IRCHII_ID M ICDNDUCTO R ^ FDS4410 Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional


    OCR Scan     		PDF FDS4410 FDS4410

    F7406

    Abstract: No abstract text available
    Text: PD - 9.1247C International IG R Rectifier IR F7406 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • P-Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching V dss = -30V


    OCR Scan     		PDF 1247C F7406 0D2flfl77 F7406