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    MOSFET IRFP250 I Search Results

    MOSFET IRFP250 I Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET IRFP250 I Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TA9295

    Abstract: irfp250 applications IRFP250 TB334 transistor IRFP250
    Text: IRFP250 Data Sheet July 1999 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP250 • 33A, 200V • rDS ON = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds


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    PDF IRFP250 TB334 O-247 TA9295 irfp250 applications IRFP250 TB334 transistor IRFP250

    IRFP250

    Abstract: irfp250 applications
    Text: IRFP250 N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh II MOSFET TYPE IRFP250 • ■ ■ ■ ■ VDSS RDS on ID 200V < 0.085Ω 33 A TYPICAL RDS(on) = 0.073Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


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    PDF IRFP250 O-247 IRFP250 irfp250 applications

    IRFP250

    Abstract: irfp250 applications irfp250 mosfet NOR gate
    Text: IRFP250 N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh II MOSFET TYPE IRFP250 • ■ ■ ■ ■ VDSS RDS on ID 200V < 0.085Ω 33 A TYPICAL RDS(on) = 0.073Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


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    PDF IRFP250 O-247 IRFP250 irfp250 applications irfp250 mosfet NOR gate

    transistor IRFP250

    Abstract: No abstract text available
    Text: IRFP250 Data Sheet Title FP2 bt A, 0V, 85 m, 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


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    PDF IRFP250 TB334 transistor IRFP250

    irfp250 applications pulse transformer

    Abstract: irfp250 DRIVER irfp250 IRFP250 application irfp250 applications MOSFET IRFp250
    Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole


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    PDF IRFP250, SiHFP250 O-247 O-220 18-Jul-08 irfp250 applications pulse transformer irfp250 DRIVER irfp250 IRFP250 application irfp250 applications MOSFET IRFp250

    IRFP250 application

    Abstract: No abstract text available
    Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the


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    PDF IRFP250, SiHFP250 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFP250 application

    Untitled

    Abstract: No abstract text available
    Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the


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    PDF IRFP250, SiHFP250 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFP250

    Abstract: irfp250 applications IRFP250PBF
    Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole


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    PDF IRFP250, SiHFP250 O-247 O-220 IRFP250 irfp250 applications IRFP250PBF

    Irfp250 irfp460

    Abstract: FDH44N50 IRFP460 IRFP250N IRFP240 IRFP9150 HUF75639 N-channel MOSFET to-247 HUF75344G3 HUF75345G3
    Text: Discrete MOSFETs TO-247 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-247 N-Channel HUF75345G3 55 Single 0.007 - - - 125 75 325 HUFA75345G3 55 Single 0.007 - - - 125


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    PDF O-247 O-247 HUF75345G3 HUFA75345G3 HUF75344G3 HUFA75344G3 HUF75343G3 HUFA75343G3 HUF75339G3 HUFA75339G3 Irfp250 irfp460 FDH44N50 IRFP460 IRFP250N IRFP240 IRFP9150 HUF75639 N-channel MOSFET to-247 HUF75344G3 HUF75345G3

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


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    IEC571

    Abstract: RIA12 EN50155 336V IRFD110 application IRFP450 dc to dc converter from 110V to 24V RAILWAY FIXED EQUIPMENT 110VN IRFP450 Power Mosfet
    Text: Application Note Using Modular DC-DC Converters to Meet European Standards for Railway Applications In Europe, the performance of electrical and electronic equipment in railway applications is governed by two international standards. Electrical Requirements


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    PDF EN50155 IEC571) IEC571, EN50155, RIA12, IEC571 RIA12 EN50155 336V IRFD110 application IRFP450 dc to dc converter from 110V to 24V RAILWAY FIXED EQUIPMENT 110VN IRFP450 Power Mosfet

    IRGP50B60PDPBF

    Abstract: 035H 30ETH06 IRFP250 IRFPE30 210uH
    Text: PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies


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    PDF IRGP50B60PDPbF IRFPE30 O-247AC IRGP50B60PDPBF 035H 30ETH06 IRFP250 IRFPE30 210uH

    mosfet 10a 600v

    Abstract: td 1410 IRGP50B60PD 600V 25A Ultrafast Diode irfp250 DRIVER P channel 50A IGBT 30ETH06 IRFP250 50AIF
    Text: PD - 94624B IRGP50B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies


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    PDF 94624B IRGP50B60PD O-247AC mosfet 10a 600v td 1410 IRGP50B60PD 600V 25A Ultrafast Diode irfp250 DRIVER P channel 50A IGBT 30ETH06 IRFP250 50AIF

    irfp250 DRIVER

    Abstract: irgb20b60pd1 8ETH06 IRFP250 IRGB20B60PD
    Text: PD - 94613A IRGB20B60PD1 SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies Equivalent MOSFET Parameters  RCE on typ. = 158mΩ


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    PDF 4613A IRGB20B60PD1 O-220AB irfp250 DRIVER irgb20b60pd1 8ETH06 IRFP250 IRGB20B60PD

    IRFP250

    Abstract: IRF250 MOSFET IRF250 IRF250 power MOSFET irfp250 mosfet IRF250 MOSFET
    Text: IRFP250/251/252/253 IRF250/251/252/253 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • L o w e r R d s ON Im p ro ve d in d u c tiv e ru g g e d n e s s F ast s w itc h in g tim e s R u g g e d p o ly s ilic o n g a te c e ll s tru c tu re L o w e r in p u t c a p a c ita n c e


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    PDF IRFP250/251/252/253 IRF250/251/252/253 IRFP250/IRF250 IRFP251 /IRF251 IRFP252/IRF252 IRFP253/IRF253 IRFP250 IRF250 MOSFET IRF250 IRF250 power MOSFET irfp250 mosfet IRF250 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRFP250/251 FEATURES • Lower R ds on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


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    PDF IRFP250/251 IRFP250 IRFP251

    irfp250

    Abstract: 443D irfp250 mosfet
    Text: PD-9.443D International S Rectifier IRFP250 HEXFET Power M OSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V ^DS on = 0 -0 8 5 Q


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    PDF IRFP250 O-247 T0-220 O-218 irfp250 443D irfp250 mosfet

    irf250 dc motor

    Abstract: IRF250 ic data
    Text: 4686226 I X Y S CORP 03 4t.0L.22Li □ 0 D 0 2 D f l ¡j □ □IXYS TECHNICAL DATA SHEET August 1988 DATA S H E E T NO. 1002A IRFC250 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V BR DSS • • . . 200V 0.085a


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    PDF IRFC250: 2N6766 2N6765 IRF250/IRFP250 IRF251/IRFP251 IRF252/IRFP252 1RF253/IRFP253 IRF254/IRFP254 IRFC250 irf250 dc motor IRF250 ic data

    Irfp450

    Abstract: No abstract text available
    Text: [ ' - 7964142 SAM SUN G S EM IC O N D UCTOR INC D eT | 7 ^ 4 1 4 2 9 8D 0 5 2 2 4 □□□5524 3 | D T ~ 3 i -1 3 N-CHANNEL POWER MOSFETS IRFP450/451/452/453 FEATURES Low RDS on at high voltage Improved inductive ruggedness Excellent high voltage stability


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    PDF IRFP450/451/452/453 IRFP250 IRFP251 IRFP252 IRFP253 IRFP450 IRFP451 OOGS43S Irfp450

    IRFP450

    Abstract: IRFP452 irfp450 samsung IRFP451 IRFP453 IRFP250 IRFP251 IRFP252 IRFP253 tr irfp450
    Text: [ 7964142 ÏF lT T tm M a INC SAMSUNG S E M I C ONDUCTOR 00[]52HLt 3 98 D 0 5 2 2 4 I D T ~ 3 ñ -13 N-CHANNEL POWER MOSFETS IRFP450/451/452/453 FEATURES Low RDS on at high voltage Improved inductive ruggedness Excellent high voltage stability Fast switching times


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    PDF cib414S IRFP450/451Z452/453 IRFP250 IRFP251 IRFP252 IRFP253 IRFP450 IRFP451 IRFP452 IRFP453 irfp450 samsung tr irfp450

    IRF1401

    Abstract: IRF4311 IRF1501 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221
    Text: C T ’ SiR conix in c o r p o r a te d Industry Standard Commercial MOSFETs Part Number V BR^DSS Id (A rDS(ON) (A) Package Part Number V(BR^[)SS Id (A) rDS(ON) (A) Package IRF1301 100 14 0.18 TO-2G4 IRF432’ 500 4.0 2.0 T0-204 IRF1311 60 14 0.18 T0-204


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    PDF IRF1301 IRF1311 IRF1321 IRF1331 IRF1401 1RF1411 IRF1421 IRF1431 IRF1501 IRF1511 IRF4311 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221

    wiring diagram for ge cr2943

    Abstract: 5BPB56HAA100 B37 zener diode wiring diagram for ge cr2943na102a ge cr2943
    Text: MIC5011 MIC5011 Minimum Parts High- or Low-Side MOSFET Driver General Description Features The MIC5011 is the “minimum parts count” member of the Micrel MIC501X driver family. These ICs are designed to drive the gate of an N-channel power MOSFET above the


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    PDF MIC5011 MIC5011 MIC501X MIL-STD-883 DD2512 wiring diagram for ge cr2943 5BPB56HAA100 B37 zener diode wiring diagram for ge cr2943na102a ge cr2943

    Untitled

    Abstract: No abstract text available
    Text: General Description Features The MIC5011 is the “minimum parts count” member of the Micrel MIC501X predriver family. These ICs are designed to drive the gate of an N-channel power MOSFET above the supply rail in high-side power switch applications. The 8-pin


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    PDF MIC5011 MIC501X MIL-STD-883

    wiring diagram for ge cr2943na102a

    Abstract: wiring diagram for ge cr2943
    Text: MIC5011 Minimum Parts High- or Low-Side MOSFET Driver General Description Features The MIC5011 is the “minimum parts count” member of the Micrel MIC501X driver family. These ICs are designed to drive the gate of an N-channel power MOSFET above the supply rail in high-side power switch applications. The 8-pin


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    PDF MIC5011 MIC5011 MIC501X MIL-STD-883 wiring diagram for ge cr2943na102a wiring diagram for ge cr2943