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    MOSFET IR 840 FEATURES Search Results

    MOSFET IR 840 FEATURES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET IR 840 FEATURES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TEA1507P

    Abstract: TOP225Y MC44603P smd DAL TDA4605-3 stm cl 140 UC3842B 75155N 12v 60w smps MAX713CPE
    Text: eratum.qxd 26/2/04 2:49 pm Page 1 Semiconductors - Power Supply & Control Switching Regulators Fixed Negative & Positive Type Manuf Package IOUT SW VOUT VIN (A)Max (V)Typ (V)Min-Max S/down SMT Features LT1300CN8 LT DIP8 0•62 3·3/5 1·8-8 N LM2597HVN-3·3


    Original     		PDF LT1300CN8 LM2597HVN-3 LM2675N-3 LT1507CS8-3 LM2575T-3 O220-5 L4973V3 DIP18 REG710NA3 OT23-6 TEA1507P TOP225Y MC44603P smd DAL TDA4605-3 stm cl 140 UC3842B 75155N 12v 60w smps MAX713CPE

    mosfet ir 840 features

    Abstract: mosfet ir 840 AD6C011 MOSFET 800V 10A
    Text: AD6C011 1 Form A 800V / 35Ω MOSFET Output Solid State Relay Description Features •      The AD6C011 is a bi-directional, single-pole, single-throw, normally open multipurpose solid-state relay. The relay consists of an IR LED optically coupled to a Photo Diode


    Original     		PDF AD6C011 AD6C011 100mA 2500VRMS) AD6C011/S/TR mosfet ir 840 features mosfet ir 840 MOSFET 800V 10A

    Untitled

    Abstract: No abstract text available
    Text: AD6C011 1 Form A 800V / 35 MOSFET Output Solid State Relay Description Features •      The AD6C011 is a bi-directional, single-pole, single-throw, normally open multipurpose solid-state relay. The relay consists of an IR LED optically coupled to a Photo Diode


    Original     		PDF AD6C011 AD6C011 100mA 2500VRMS) AD6C011/S/TR

    Untitled

    Abstract: No abstract text available
    Text: PD - 96401 AUTOMOTIVE GRADE AUIRFS3206 AUIRFSL3206 Features l l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


    Original     		PDF AUIRFS3206 AUIRFSL3206

    Untitled

    Abstract: No abstract text available
    Text: PD - 96401A AUTOMOTIVE GRADE AUIRFS3206 AUIRFSL3206 Features l l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


    Original     		PDF 6401A AUIRFS3206 AUIRFSL3206

    SL3206

    Abstract: mosfet ir 840 AUIRFS3206TRR
    Text: PD - 96401A AUTOMOTIVE GRADE AUIRFS3206 AUIRFSL3206 Features l l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


    Original     		PDF 6401A AUIRFS3206 AUIRFSL3206 SL3206 mosfet ir 840 AUIRFS3206TRR

    AUFP2907

    Abstract: No abstract text available
    Text: PD -97692 AUTOMOTIVE GRADE AUIRFP2907 HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allow ed up to Tjmax


    Original     		PDF AUIRFP2907 AUFP2907

    AUFP2907

    Abstract: No abstract text available
    Text: PD -97692A AUTOMOTIVE GRADE AUIRFP2907 HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allow ed up to Tjmax


    Original     		PDF -97692A AUIRFP2907 AUFP2907

    AUFP2907

    Abstract: AUIRFP2907
    Text: PD -97692A AUTOMOTIVE GRADE AUIRFP2907 HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allow ed up to Tjmax


    Original     		PDF -97692A AUIRFP2907 AUFP2907 AUIRFP2907

    Untitled

    Abstract: No abstract text available
    Text: CPC1978J i4-PAC Power Relay Blocking Voltage Load Current On-resistance RθJC CPC1978J 800 2.5 2.3 0.35 Units VP Arms Ω °C/W Features • • • • • • • • • • • Compact i4-PAC Power Package Low Thermal Resistance Heat Sink Option Handle Load Currents Up to 2.5Arms free air


    Original     		PDF CPC1978J CPC1978J CPC1978J, 2500Vrms DS-CPC1978J-R03

    MIPF2520

    Abstract: MIPF2520D MAX8581 rating of mosfet for 3 phase 1 hp
    Text: 19-0593; Rev 0; 11/06 KIT ATION EVALU E L B AVAILA 2.5MHz/1.5MHz Step-Down Converters with 60mΩ Bypass in TDFN for CDMA PA Power Features The MAX8581/MAX8582 high-frequency step-down converters are optimized for dynamically powering the power amplifier PA in CDMA handsets. They integrate a highefficiency PWM step-down converter for medium- and


    Original     		PDF MAX8581/MAX8582 MAX8581/ MAX8582 MAX8581/MAX8582 MIPF2520 MIPF2520D MAX8581 rating of mosfet for 3 phase 1 hp

    MIPF2520D

    Abstract: MDT2520-CR MAX8581 rating of mosfet for 3 phase 1 hp D2812C LP03310
    Text: 19-0593; Rev 1; 1/07 KIT ATION EVALU LE B A IL A AV 2.5MHz/1.5MHz Step-Down Converters with 60mΩ Bypass in TDFN for CDMA PA Power Features The MAX8581/MAX8582 high-frequency step-down converters are optimized for dynamically powering the power amplifier PA in CDMA handsets. They integrate a highefficiency PWM step-down converter for medium- and


    Original     		PDF MAX8581/MAX8582 MAX8581/ MAX8582 T1433-2 MIPF2520D MDT2520-CR MAX8581 rating of mosfet for 3 phase 1 hp D2812C LP03310

    Untitled

    Abstract: No abstract text available
    Text: 19-0593; Rev 1; 1/07 KIT ATION EVALU LE B A IL A AV 2.5MHz/1.5MHz Step-Down Converters with 60mΩ Bypass in TDFN for CDMA PA Power Features The MAX8581/MAX8582 high-frequency step-down converters are optimized for dynamically powering the power amplifier PA in CDMA handsets. They integrate a highefficiency PWM step-down converter for medium- and


    Original     		PDF MAX8581/MAX8582 MAX8581/ MAX8582 T1433-2

    D2812C

    Abstract: No abstract text available
    Text: 19-0593; Rev 1; 1/07 KIT ATION EVALU LE B A IL A AV 2.5MHz/1.5MHz Step-Down Converters with 60mΩ Bypass in TDFN for CDMA PA Power Features The MAX8581/MAX8582 high-frequency step-down converters are optimized for dynamically powering the power amplifier PA in CDMA handsets. They integrate a highefficiency PWM step-down converter for medium- and


    Original     		PDF MAX8581/MAX8582 MAX8581/ MAX8582 21-0137I T1033 MAX8581ETB+ MAX8581ETB D2812C

    IRFP4229

    Abstract: No abstract text available
    Text: PD - 97079A IRFP4229PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications


    Original     		PDF 7079A IRFP4229PbF O-247AC IRFP4229

    CPC1978

    Abstract: CPC1978J
    Text: CPC1978 i4-PAC Power Relay Parameter Blocking Voltage Load Current, TA=25ºC With 5°C/W Heat Sink No Heat Sink On-resistance RθJC Rating 800 Units VP 1.85 0.75 2.3 0.35 Arms Ω °C/W Features • • • • • • • • • Compact i4-PAC™ Power Package


    Original     		PDF CPC1978 85Arms 2500Vrms DS-CPC1978-R05 CPC1978 CPC1978J

    L175C

    Abstract: irfs4229 IRFS4229PBF
    Text: PD - 97080A IRFS4229PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications


    Original     		PDF 7080A IRFS4229PbF L175C irfs4229 IRFS4229PBF

    irfs4229

    Abstract: No abstract text available
    Text: PD - 97080B IRFS4229PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications


    Original     		PDF 97080B IRFS4229PbF irfs4229

    Untitled

    Abstract: No abstract text available
    Text: PD - 97080B IRFS4229PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications


    Original     		PDF 97080B IRFS4229PbF

    MIPF2520D

    Abstract: No abstract text available
    Text: 19-0593; Rev 1; 1/07 KIT ATION EVALU LE B A IL A AV 2.5MHz/1.5MHz Step-Down Converters with 60mΩ Bypass in TDFN for CDMA PA Power Features The MAX8581/MAX8582 high-frequency step-down converters are optimized for dynamically powering the power amplifier PA in CDMA handsets. They integrate a highefficiency PWM step-down converter for medium- and


    Original     		PDF MAX8581/MAX8582 MAX8581/ MAX8582 21-0137I T1033 MAX8582ETB+ MAX8582ETB MIPF2520D

    E3P303

    Abstract: MARKING 842 SCHOTTKY 842 so8 soic-8 marking
    Text: NTMSD3P303R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , http://onsemi.com Schottky Diode with Low VF


    Original     		PDF NTMSD3P303R2 PortabTMSD3P303R2 0E-02 0E-01 0E-05 0E-04 0E-03 E3P303 MARKING 842 SCHOTTKY 842 so8 soic-8 marking

    mosfet ir 840 features

    Abstract: mosfet ir 840 IRFP2907 IRFP2907 Application Notes
    Text: PD -93906A IRFP2907 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications ● ● D Integrated Starter Alternator 42 Volts Automotive Electrical Systems VDSS = 75V RDS on = 4.5mΩ Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance


    Original     		PDF -93906A IRFP2907 notice9/00 mosfet ir 840 features mosfet ir 840 IRFP2907 IRFP2907 Application Notes

    UFN841

    Abstract: UFN041 mosfet ir 840 features Hjc 22
    Text: UNITRODE CORP 9347963 T2 UNITRODE DeT| T347Tb3 D01D7ÔÜ & CORP 92D 10780 D f~ *? - 3 POWER MOSFET TRANSISTORS [“ 500 Volt, 0.85 Ohm N-Channel FEATURES » Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown


    OCR Scan     		PDF T347Tb3 D01D7Ô UFN842 UFN843 UFN841 UFN041 mosfet ir 840 features Hjc 22

    mosfet 40a 200v

    Abstract: SSH40N20 SSH40N15
    Text: N-CHANNEL POWER MOSFETS SSH40N20/15 FEATURES • L o w e r R d s o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF SSH40N20/15 SSH40N20 SSH40N15 mosfet 40a 200v