TEA1507P
Abstract: TOP225Y MC44603P smd DAL TDA4605-3 stm cl 140 UC3842B 75155N 12v 60w smps MAX713CPE
Text: eratum.qxd 26/2/04 2:49 pm Page 1 Semiconductors - Power Supply & Control Switching Regulators Fixed Negative & Positive Type Manuf Package IOUT SW VOUT VIN (A)Max (V)Typ (V)Min-Max S/down SMT Features LT1300CN8 LT DIP8 0•62 3·3/5 1·8-8 N LM2597HVN-3·3
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LT1300CN8
LM2597HVN-3
LM2675N-3
LT1507CS8-3
LM2575T-3
O220-5
L4973V3
DIP18
REG710NA3
OT23-6
TEA1507P
TOP225Y
MC44603P
smd DAL
TDA4605-3
stm cl 140
UC3842B
75155N
12v 60w smps
MAX713CPE
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UFN841
Abstract: UFN041 mosfet ir 840 features Hjc 22
Text: UNITRODE CORP 9347963 T2 UNITRODE DeT| T347Tb3 D01D7ÔÜ & CORP 92D 10780 D f~ *? - 3 POWER MOSFET TRANSISTORS [“ 500 Volt, 0.85 Ohm N-Channel FEATURES » Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown
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T347Tb3
D01D7Ô
UFN842
UFN843
UFN841
UFN041
mosfet ir 840 features
Hjc 22
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mosfet ir 840 features
Abstract: mosfet ir 840 AD6C011 MOSFET 800V 10A
Text: AD6C011 1 Form A 800V / 35Ω MOSFET Output Solid State Relay Description Features • The AD6C011 is a bi-directional, single-pole, single-throw, normally open multipurpose solid-state relay. The relay consists of an IR LED optically coupled to a Photo Diode
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AD6C011
AD6C011
100mA
2500VRMS)
AD6C011/S/TR
mosfet ir 840 features
mosfet ir 840
MOSFET 800V 10A
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Untitled
Abstract: No abstract text available
Text: AD6C011 1 Form A 800V / 35 MOSFET Output Solid State Relay Description Features • The AD6C011 is a bi-directional, single-pole, single-throw, normally open multipurpose solid-state relay. The relay consists of an IR LED optically coupled to a Photo Diode
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AD6C011
AD6C011
100mA
2500VRMS)
AD6C011/S/TR
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Untitled
Abstract: No abstract text available
Text: PD - 96401 AUTOMOTIVE GRADE AUIRFS3206 AUIRFSL3206 Features l l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
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AUIRFS3206
AUIRFSL3206
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Untitled
Abstract: No abstract text available
Text: PD - 96401A AUTOMOTIVE GRADE AUIRFS3206 AUIRFSL3206 Features l l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
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6401A
AUIRFS3206
AUIRFSL3206
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SL3206
Abstract: mosfet ir 840 AUIRFS3206TRR
Text: PD - 96401A AUTOMOTIVE GRADE AUIRFS3206 AUIRFSL3206 Features l l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
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6401A
AUIRFS3206
AUIRFSL3206
SL3206
mosfet ir 840
AUIRFS3206TRR
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AUFP2907
Abstract: No abstract text available
Text: PD -97692 AUTOMOTIVE GRADE AUIRFP2907 HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allow ed up to Tjmax
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AUIRFP2907
AUFP2907
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AUFP2907
Abstract: No abstract text available
Text: PD -97692A AUTOMOTIVE GRADE AUIRFP2907 HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allow ed up to Tjmax
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-97692A
AUIRFP2907
AUFP2907
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AUFP2907
Abstract: AUIRFP2907
Text: PD -97692A AUTOMOTIVE GRADE AUIRFP2907 HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allow ed up to Tjmax
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-97692A
AUIRFP2907
AUFP2907
AUIRFP2907
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Untitled
Abstract: No abstract text available
Text: CPC1978J i4-PAC Power Relay Blocking Voltage Load Current On-resistance RθJC CPC1978J 800 2.5 2.3 0.35 Units VP Arms Ω °C/W Features • • • • • • • • • • • Compact i4-PAC Power Package Low Thermal Resistance Heat Sink Option Handle Load Currents Up to 2.5Arms free air
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CPC1978J
CPC1978J
CPC1978J,
2500Vrms
DS-CPC1978J-R03
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MIPF2520
Abstract: MIPF2520D MAX8581 rating of mosfet for 3 phase 1 hp
Text: 19-0593; Rev 0; 11/06 KIT ATION EVALU E L B AVAILA 2.5MHz/1.5MHz Step-Down Converters with 60mΩ Bypass in TDFN for CDMA PA Power Features The MAX8581/MAX8582 high-frequency step-down converters are optimized for dynamically powering the power amplifier PA in CDMA handsets. They integrate a highefficiency PWM step-down converter for medium- and
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MAX8581/MAX8582
MAX8581/
MAX8582
MAX8581/MAX8582
MIPF2520
MIPF2520D
MAX8581
rating of mosfet for 3 phase 1 hp
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MIPF2520D
Abstract: MDT2520-CR MAX8581 rating of mosfet for 3 phase 1 hp D2812C LP03310
Text: 19-0593; Rev 1; 1/07 KIT ATION EVALU LE B A IL A AV 2.5MHz/1.5MHz Step-Down Converters with 60mΩ Bypass in TDFN for CDMA PA Power Features The MAX8581/MAX8582 high-frequency step-down converters are optimized for dynamically powering the power amplifier PA in CDMA handsets. They integrate a highefficiency PWM step-down converter for medium- and
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MAX8581/MAX8582
MAX8581/
MAX8582
T1433-2
MIPF2520D
MDT2520-CR
MAX8581
rating of mosfet for 3 phase 1 hp
D2812C
LP03310
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PDF
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Untitled
Abstract: No abstract text available
Text: 19-0593; Rev 1; 1/07 KIT ATION EVALU LE B A IL A AV 2.5MHz/1.5MHz Step-Down Converters with 60mΩ Bypass in TDFN for CDMA PA Power Features The MAX8581/MAX8582 high-frequency step-down converters are optimized for dynamically powering the power amplifier PA in CDMA handsets. They integrate a highefficiency PWM step-down converter for medium- and
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MAX8581/MAX8582
MAX8581/
MAX8582
T1433-2
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IRFB4229PbF
Abstract: IRFB4229
Text: PD - 97078 IRFB4229PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
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IRFB4229PbF
O-220AB
IRFB4229PbF
IRFB4229
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IRFP4229
Abstract: No abstract text available
Text: PD - 97079A IRFP4229PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
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7079A
IRFP4229PbF
O-247AC
IRFP4229
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CPC1978
Abstract: CPC1978J
Text: CPC1978 i4-PAC Power Relay Parameter Blocking Voltage Load Current, TA=25ºC With 5°C/W Heat Sink No Heat Sink On-resistance RθJC Rating 800 Units VP 1.85 0.75 2.3 0.35 Arms Ω °C/W Features • • • • • • • • • Compact i4-PAC™ Power Package
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CPC1978
85Arms
2500Vrms
DS-CPC1978-R05
CPC1978
CPC1978J
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mosfet 40a 200v
Abstract: SSH40N20 SSH40N15
Text: N-CHANNEL POWER MOSFETS SSH40N20/15 FEATURES • L o w e r R d s o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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SSH40N20/15
SSH40N20
SSH40N15
mosfet 40a 200v
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L175C
Abstract: irfs4229 IRFS4229PBF
Text: PD - 97080A IRFS4229PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
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7080A
IRFS4229PbF
L175C
irfs4229
IRFS4229PBF
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irfs4229
Abstract: No abstract text available
Text: PD - 97080B IRFS4229PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
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97080B
IRFS4229PbF
irfs4229
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 97080B IRFS4229PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
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97080B
IRFS4229PbF
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PDF
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MIPF2520D
Abstract: No abstract text available
Text: 19-0593; Rev 1; 1/07 KIT ATION EVALU LE B A IL A AV 2.5MHz/1.5MHz Step-Down Converters with 60mΩ Bypass in TDFN for CDMA PA Power Features The MAX8581/MAX8582 high-frequency step-down converters are optimized for dynamically powering the power amplifier PA in CDMA handsets. They integrate a highefficiency PWM step-down converter for medium- and
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MAX8581/MAX8582
MAX8581/
MAX8582
21-0137I
T1033
MAX8582ETB+
MAX8582ETB
MIPF2520D
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E3P303
Abstract: MARKING 842 SCHOTTKY 842 so8 soic-8 marking
Text: NTMSD3P303R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , http://onsemi.com Schottky Diode with Low VF
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NTMSD3P303R2
PortabTMSD3P303R2
0E-02
0E-01
0E-05
0E-04
0E-03
E3P303
MARKING 842 SCHOTTKY
842 so8 soic-8 marking
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mosfet ir 840 features
Abstract: mosfet ir 840 IRFP2907 IRFP2907 Application Notes
Text: PD -93906A IRFP2907 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications ● ● D Integrated Starter Alternator 42 Volts Automotive Electrical Systems VDSS = 75V RDS on = 4.5mΩ Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance
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-93906A
IRFP2907
notice9/00
mosfet ir 840 features
mosfet ir 840
IRFP2907
IRFP2907 Application Notes
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