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    MOSFET IR 2304 Search Results

    MOSFET IR 2304 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET IR 2304 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    din IEC 68

    Abstract: 150a gto GTO 100A IXYS 40N60A D-68623 DWEP 17-12 DWEP DWlP 2580B L 7CG
    Text: Contents Page Symbols and Definitions Nomenclature General Information Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types S-Series, SCSOA Capability, Fast Types


    Original     		PDF

    tr 13001

    Abstract: No abstract text available
    Text: July 15, 2010 Automotive Grade AUIRS2302S TR HALF-BRIDGE DRIVER Features •               Product Summary Floating channel designed for bootstrap operation VOFFSET Fully operational to +600V Tolerant to negative transient voltage – dV/dt immune VOUT


    Original     		PDF AUIRS2302S 120mA 250mA 720ns 250ns 540ns tr 13001

    Untitled

    Abstract: No abstract text available
    Text: July 15, 2010 Automotive Grade AUIRS2302S TR HALF-BRIDGE DRIVER Features •               Product Summary Floating channel designed for bootstrap operation VOFFSET Fully operational to +600V Tolerant to negative transient voltage – dV/dt immune VOUT


    Original     		PDF AUIRS2302S 540ns

    FMS2304

    Abstract: SMD mosfet MARKING code TJ
    Text: Formosa MS SMD MOSFET FMS2304 List List. 1 Package outline. 2 Features. 2


    Original     		PDF FMS2304 MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC METHOD-1031 FMS2304 SMD mosfet MARKING code TJ

    IR2308

    Abstract: DT97-3 Marking code 2106 540ns IR2308S MS-012AA
    Text: Data Sheet No. PD60209 revC IR2308 S & (PbF) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PDF PD60209 IR2308 540ns IR2308S 210er IR2308 IR2308S R2308 DT97-3 Marking code 2106 MS-012AA

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD60209 revC IR2308 S & (PbF) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PDF PD60209 IR2308 540ns IR2308S IR2308 IR2308S R2308

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Data Sheet No.PD60266 IRS2308 S PbF HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PDF PD60266 IRS2308 540ns IRS2308S MS-012AA) IRS2308PbF IRS2308SPbF

    PD60246

    Abstract: No abstract text available
    Text: Data Sheet No. PD60246 PR EL I MI N A R Y IRS2106 4 (S) & (PbF) HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • Packages Fully operational to +600V Tolerant to negative transient voltage


    Original     		PDF PD60246 IRS2106 IRS2106) 14-Lead IRS2106S PD60246

    MOSFET 2302

    Abstract: PD60260 marking MDt
    Text: Data Sheet No. PD60260 PRELIMINARY IRS2108 4 (S) PbF Features HALF-BRIDGE DRIVER • Floating channel designed for bootstrap operation Fully operational to +600V Packages Tolerant to negative transient voltage dV/dt immune 14-Lead SOIC 8-Lead SOIC • Gate drive supply range from 10 to 20V


    Original     		PDF PD60260 IRS2108 14-Lead IRS21084S IRS2108S IRS21084 IRS2108 540ns IRS21084) MOSFET 2302 PD60260 marking MDt

    PD65005

    Abstract: IR2108
    Text: Data Sheet No. PD65005 IR2108 4 C HALF-BRIDGE DRIVER DIE IN WAFER FORM Features • 100 % Tested at Probe! • Available in Chip Pack, Unsawn Wafer, Sawn on Film " • Floating channel designed for bootstrap operation • • Fully operational to +600V Tolerant to negative transient voltage


    Original     		PDF PD65005 IR2108 540ns IR21084) PD65005

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet No. PD60200 IR2304 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • • • VOFFSET IO+/- min VOUT Delay Matching Internal deadtime ton/off (typ.) to +600V. Tolerant to negative transient voltage


    Original     		PDF PD60200 IR2304 100ns A/130 5M-1994. MS-012AA. MS-012AA)

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD60200 IR2304 S HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • • • VOFFSET IO+/- (min) VOUT Delay Matching Internal deadtime ton/off (typ.) to +600V. Tolerant to negative transient voltage


    Original     		PDF PD60200 IR2304 100ns A/130 5M-1994. MS-012AA. MS-012AA)

    IR2304

    Abstract: MS-012AA PD60200-A
    Text: Data Sheet No. PD60200-A IR2304 S HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • • • VOFFSET IO+/- (min) VOUT Delay Matching Internal deadtime ton/off (typ.) to +600V. Tolerant to negative transient voltage


    Original     		PDF PD60200-A IR2304 100ns A/130 5M-1994. MS-012AA. MS-012AA) MS-012AA PD60200-A

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD60200 revB IR2304 S & (PbF) HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • • • • to +600V. Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PDF PD60200 IR2304 100ns A/130 MS-012AA) IR2304 IR2304S

    280MT

    Abstract: IR2308 IR2308S MS-012AA DT97-3 tip dt97 DSASW0024824 540N
    Text: Data Sheet No60209 IR2308 S HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PDF No60209 IR2308 540ns 5M-1994. MS-012AA. MS-012AA) 280MT IR2308S MS-012AA DT97-3 tip dt97 DSASW0024824 540N

    DT97-3

    Abstract: IR2308 540N
    Text: Data Sheet No. PD60209_B IR2308 S HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PDF PD60209 IR2308 540ns 5M-1994. MS-012AA. MS-012AA) DT97-3 540N

    mosfet te 2304

    Abstract: PD60200 MOSFET IR 2304 IR2304S IR2304 IR2304SPBF T 2109 MS-012AA
    Text: Data Sheet No. PD60200 revB IR2304 S & (PbF) HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • • • • to +600V. Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PDF PD60200 IR2304 100ns A/130 MS-012AA) IR2304 IR2304S mosfet te 2304 MOSFET IR 2304 IR2304S IR2304SPBF T 2109 MS-012AA

    Untitled

    Abstract: No abstract text available
    Text: 70-W612A3C600SH-M600F target datasheet flowMNPC 4w 1200V/600A Features flowMNPC 4w housing ● High Efficient Advanced Paralleled NPC Topology ● Asymmetrical Inductance with Interface for Optional Regeneration of Switching Losses ● High Power Screw Interface


    Original     		PDF 70-W612A3C600SH-M600F 200V/600A

    IR2106 APPLICATION NOTE

    Abstract: IR2106S
    Text: Data Sheet No. PD60162-R IR2106 4 (S) HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Packages Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PDF PD60162-R IR2106 IR2106) IR21064 IR2106 MS-012AA) IR2106 APPLICATION NOTE IR2106S

    IR2108

    Abstract: IR21084 IR21084S IR2108S MS-012AA MS-012AB
    Text: Data Sheet No. PD60161-O IR2108 4 (S) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PDF PD60161-O IR2108 540ns IR21084) 14-Lead MS-012AA) MS-001AC) IR21084 IR21084S IR2108S MS-012AA MS-012AB

    IR2106 APPLICATION NOTE

    Abstract: IR2301
    Text: Data Sheet No. PD60201 IR2106 4 /IR2301(S) HIGH AND LOW SIDE DRIVER Features Packages • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V (IR2106(4)


    Original     		PDF PD60201 IR2106 /IR2301 IR2301) IR2106/IR2301) IR21064 IR2106 APPLICATION NOTE IR2301

    IR2108

    Abstract: IR21084 IR21084S IR2108S MS-012AA MS-012AB
    Text: Data Sheet No. PD60161-O IR2108 4 (S) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels


    Original     		PDF PD60161-O IR2108 540ns IR21084) IR2108S 14-LeaSIONS MS-012AA. MS-012AA) 14-Lead IR21084 IR21084S IR2108S MS-012AA MS-012AB

    IR2109 application note

    Abstract: halfbridge design ir2109 IR21094 application note mosfet te 2304
    Text: Data Sheet No. PD60163-Q IR2109 4 HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V(IR2109(4)


    Original     		PDF PD60163-Q IR2109 IR21094 IR2109 540ns IR21094) MS-012AB) IR2109 application note halfbridge design ir2109 IR21094 application note mosfet te 2304

    IR2109 application note

    Abstract: IR21094 application note IR2109 application halfbridge design ir2109 IR2302
    Text: Data Sheet No. PD60202 IR2109 4 /IR2302 (S) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • • • Packages 14 Lead SOIC Fully operational to +600V IR21094(S) Tolerant to negative transient voltage


    Original     		PDF PD60202 IR2109 /IR2302 IR21094 /IR2302 IR2302) IR2109/IR2302 IR2109 application note IR21094 application note IR2109 application halfbridge design ir2109 IR2302