IRFC3810B
Abstract: IRFC3810
Text: PD - 95826B IRFC3810B D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film G Key Electrical Characteristics TO-274 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description
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95826B
IRFC3810B
O-274
100nA
IRFC3810B
IRFC3810
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD ULB4132 Preliminary Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The ULB4132 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in
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ULB4132
ULB4132
ULB4132L-TA3-T
ULB4132G-TA3-T
O-220
QW-R502-678
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 100N02 Preliminary Power MOSFET 100A, 15V N-CHANNEL POWER TRENCH MOSFET DESCRIPTION The UTC 100N02 is an N-channel it uses UTC’s advanced technology to minimum on-state resistance, low switching speed. The UTC 100N02 is generally
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100N02
100N02
100N20L-TM3-T
100N20G-TM3-T
100N20L-TN3-T
100N20G-TN3-T
100N20L-TN3-R
100N20G-TN3-R
QW-R502-860
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MOSFET 50V 100A
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100N05 Power MOSFET 100A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100N05 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance and superior switching
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UTT100N05
UTT100N05
O-220
UTT100N05L-TA3-T
UTT100N05G-TA3-T
QW-R502-688
MOSFET 50V 100A
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ssf7508
Abstract: Mosfet
Text: SSF7508 75V N-Channel MOSFET Main Product Characteristics VDSS 75V RDS on 6mΩ (typ.) ID 100A TO-220 Schematic Diagram Assignment Features and Benefits Marking and Pin Advanced MOSFET process technology Special designed for PWM, load switching and
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SSF7508
O-220
pow08
ssf7508
Mosfet
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Mosfet
Abstract: SSF1010
Text: SSF1010 100V N-Channel MOSFET Main Product Characteristics VDSS 100V RDS on 9.5mohm(typ.) ID 100A TO-220 Features and Benefits Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and
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SSF1010
O-220
Mosfet
SSF1010
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT100N03-Q Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UT100N03-Q uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a
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UT100N03-Q
O-220
UT100N03-Q
O-263
UT100N03L-TA3-T
UT100N03G-TA3-T
UT100N03L-TQ2-T
UT100N03G-TQ2-T
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT100N03 100A, 30V N-CHANNEL POWER MOSFET Power MOSFET 1 1 TO-251 TO-220 DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load
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UT100N03
O-251
O-220
UT100N03
O-263
O-252
UT100N03L-TA3-T
UT100N03G-TA3-T
UT100N03L-TM3-T
UT100N03G-TM3-T
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100P03 Power MOSFET 100A, 30V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high
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UTT100P03
UTT100P03
UTT100P03L-TA3-T
UTT100P03G-TA3-T
QW-R502-697
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT100N03-Q Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03-Q uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load
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UT100N03-Q
UT100N03-Q
UT100N03L-Q-TA3-T
UT100N03G-Q-TA3-T
UT100N03L-Q-TQ2-R
UT100N03G-Q-TQ2-R
UT100N03L-Q-TQ2-T
UT100N03G-Q-TQ2-T
O-220
O-263
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ut100n03
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load
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UT100N03
UT100N03
UT100N03L-TA3-T
UT100N03G-TA3-T
UT100N03L-TQ2-R
UT100N03G-TQ2-R
UT100N03L-TQ2-T
UT100N03G-TQ2-T
O-220
O-263
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT100N03-Q Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03-Q uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load
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UT100N03-Q
UT100N03-Q
UT100N03L-TA3-T
UT100N03G-TA3-T
UT100N03L-TQ2-R
UT100N03G-TQ2-R
UT100N03L-TQ2-T
UT100N03G-TQ2-T
O-220
O-263
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT100N03-Q Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03-Q uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load
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UT100N03-Q
UT100N03-Q
UT100N03L-TA3-T
UT100N03G-TA3-T
UT100N03L-TQ2-R
UT100N03G-TQ2-R
UT100N03L-TQ2-T
UT100N03G-TQ2-T
O-220
O-263
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UT100N03
Abstract: UT100N03L-TQ2-T power mosfet 100A
Text: UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load
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UT100N03
O-220
UT100N03
O-251
O-263
UT100N03L-TA3-T
UT100N03G-TA3-T
UT100N03L-TM3-T
UT100N03G-TM3-T
UT100N03L-TQ2-R
UT100N03L-TQ2-T
power mosfet 100A
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irf5n5210sc
Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)
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4246A
IRHG567110
MO-036AB)
IRHG563110
MO-036AB
O-254AA
22JGQ045SCV
irf5n5210sc
IRHNA57064SCS
IRHM597260
irf5n5210
irhna597160scs
irhf7110scs
IRHG57110
IRHNA57264SESCS
35CLQ045SCS
12CLQ150SCS
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2192 ATP304 P-Channel Power MOSFET -60V, -100A, 6.5mΩ, ATPAK http://onsemi.com Features • On-resistance RDS on 1=5.0mΩ(typ.) • Input Capacitance Ciss=13000pF(typ.) • 4.5V drive • Halogen Free compliance Specifications Absolute Maximum Ratings at Ta = 25°C
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ENA2192
ATP304
-100A,
13000pF
PW10s,
L100H,
A2192-6/6
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2192 ATP304 P-Channel Power MOSFET -60V, -100A, 6.5m , ATPAK ht t p://onse m i.c om Features • On-resistance RDS on 1=5.0m (typ.) • Input Capacitance Ciss=13000pF(typ.) • 4.5V drive • Halogen Free compliance Specifications Absolute Maximum Ratings at Ta = 25°C
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ENA2192
ATP304
-100A,
13000pF
A2192-6/6
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ7252KDW N Channel + P Channel Power MOSFET SOT-363 DESCRIPTION This N Channel + P Channel MOSFET has been designed using advanced power trench process to optimize the RDS ON .
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OT-363
CJ7252KDW
OT-363
2N7002K
CJ502K
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Untitled
Abstract: No abstract text available
Text: FDA8440 N-Channel PowerTrench MOSFET tm 40V, 100A, 2.1mΩ Features Application • RDS on = 1.46mΩ (Typ.)@ VGS = 10V, ID = 80A • Automotive Engine Control • Qg(tot) = 345nC (Typ.)@ VGS = 10V • Powertrain Management • Low Miller Charge • Motors, Solenoids
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FDA8440
345nC
155oC)
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Untitled
Abstract: No abstract text available
Text: 10-FZ06NBA110FP-M306L28 target datasheet flowBoost0 600V/110A PS* Features flow0 12mm housing ● *PS: 2x 110A parallel switch 100A IGBT and 99mΩ MOSFET ● high speed IGBT with C6 MOSFET and SiC buck diodes ● high efficiency dual booster ● ultra fast switching frequency
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10-FZ06NBA110FP-M306L28
00V/110A
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CAS100H12
Abstract: CREE 1200V Z-Rec CAS100H12AM1 Cree SiC MOSFET silicon carbide MOSFET "CURRENT source"
Text: CAS100H12AM1 VDS 1200 V 1200V, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode ID TC= 100˚C 100 A RDS(on) Features • • • • • • Package Ultra Low Loss High Ruggedness High-Frequency Operation Zero Reverse Recovery Current from Diode
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CAS100H12AM1
VDS1200
CAS100H12AM1,
CAS100H12
CREE 1200V Z-Rec
CAS100H12AM1
Cree SiC MOSFET
silicon carbide
MOSFET "CURRENT source"
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E80276
Abstract: FM200TU-3A
Text: MITSUBISHI <MOSFET MODULE> FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-3A ● ID rms . 100A ● VDSS . 150V ● Insulated
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FM200TU-3A
E80276
E80271
E80276
FM200TU-3A
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"MOSFET Module"
Abstract: E80276 FM200TU-07A
Text: MITSUBISHI <MOSFET MODULE> FM200TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-07A ● ID rms . 100A ● VDSS . 75V ● Insulated
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FM200TU-07A
E80276
E80271
"MOSFET Module"
E80276
FM200TU-07A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET I FS100VSJ-03 HIGH-SPEED SWITCHING USE - » FS1OOVSJ-03 * * • 4V DRIVE • VDSS . 30V • rDS ON (MAX) .4 . 7 m ii • Id . 100A
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OCR Scan
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FS100VSJ-03
FS1OOVSJ-03
100ns
571CH23
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