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    MOSFET IDM 200 Search Results

    MOSFET IDM 200 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET IDM 200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6901

    Abstract: No abstract text available
    Text: N-CHANNEL LOGIC LEVEL POWER MOSFET 2N6901 • N-Channel Logic Level • Logic Level Power MOSFET Transistor In A Hermetic TO-39 Metal Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VDS VGS VDG ID ID IDM


    Original     		PDF 2N6901 O-205AF) 2N6901

    Untitled

    Abstract: No abstract text available
    Text: IXTX 24N100 Power MOSFET VDSS ID25 Single MOSFET Die RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR PLUS 247TM (IXTX) 1000 1000 V V ±20 ±30 V V G


    Original     		PDF 24N100 247TM IXFK24N100/IXFX24N100 405B2

    ixfk24n100

    Abstract: No abstract text available
    Text: IXTX 24N100 Power MOSFET VDSS ID25 Single MOSFET Die = 1000 V = 24 A = 0.40 Ω RDS on trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR PLUS 247TM


    Original     		PDF 24N100 247TM IXFK24N100/IXFX24N100 405B2 ixfk24n100

    MD 202

    Abstract: IXFX55N50 IXFK55N50 SOT-227B Outline IXFN55N50 55N50 "SOT-227 B" dimensions PLUS247 55n5
    Text: IXFK 55N50 IXFX 55N50 IXFN 55N50 HiPerFETTM Power MOSFET VDSS ID25 RDS on t rr Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C 500 500 V V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C


    Original     		PDF 55N50 PLUS247 O-264 IXFX55N50 IXFN55N50 125OC IXFK55N50/IXFX55N50 MD 202 IXFX55N50 IXFK55N50 SOT-227B Outline IXFN55N50 55N50 "SOT-227 B" dimensions 55n5

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFK 55N50 IXFX 55N50 IXFN 55N50 VDSS ID25 RDS on t rr Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C 500 500 V V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C


    Original     		PDF 55N50 PLUS247 O-264 IXFX55N50 IXFN55N50 125OC IXFK55N50/IXFX55N50

    Untitled

    Abstract: No abstract text available
    Text: AOT10T60P/AOB10T60P/AOTF10T60P 600V,10A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM


    Original     		PDF AOT10T60P/AOB10T60P/AOTF10T60P O-220 O-263 O-220F AOT10T60P AOB10T60P AOTF10T60P AOT10T60PL

    PSMG60

    Abstract: No abstract text available
    Text: ECO-PACTM 2 MOSFET Module PSMG 60/08 G S Preliminary Data Sheet VDSS = ID25 = RDS on = ≤ trr D 800 V 60 A 0.12 Ω 250 ns MOSFET (data related to single chip) Symbol Test Conditions Maximum Ratings VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt TJ = 25 °C to 150 °C


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL POWER MOSFET 2N6851 • Hermetic TO39 Metal Package • Dynamic dv/dt Rating • Simple Drive Requirements • Screening Options Available ABSOLUTE MAXIMUM RATINGS Tcase = 25°C unless otherwise stated VDS VGS ID ID IDM(1) PD Drain – Source Voltage


    Original     		PDF 2N6851 -200V 200mW/Â O-205AD)

    Untitled

    Abstract: No abstract text available
    Text: AOT20C60/AOB20C60/AOTF20C60 600V,20A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM 145A


    Original     		PDF AOT20C60/AOB20C60/AOTF20C60 O-220 O-263 O-220F AOT20C60 AOTF20C60 AOB20C60 AOT20C60L AOB20C60Late

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL POWER MOSFET 2N6851 • Hermetic TO39 Metal Package • Dynamic dv/dt Rating • Simple Drive Requirements • Screening Options Available ABSOLUTE MAXIMUM RATINGS Tcase = 25°C unless otherwise stated VDS VGS ID ID IDM(1) PD Drain – Source Voltage


    Original     		PDF 2N6851 -200V 200mW/Â O-205AD)

    Untitled

    Abstract: No abstract text available
    Text: BS107P Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)120m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC)


    Original     		PDF BS107P

    Untitled

    Abstract: No abstract text available
    Text: ZVNL120AM1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)180m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC)


    Original     		PDF ZVNL120AM1

    Untitled

    Abstract: No abstract text available
    Text: ZVN2220B Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)1.85 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)


    Original     		PDF ZVN2220B

    Untitled

    Abstract: No abstract text available
    Text: BS107PT Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)120m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC)


    Original     		PDF BS107PT

    Untitled

    Abstract: No abstract text available
    Text: ZVP2120AM1 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)120m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC)


    Original     		PDF ZVP2120AM1

    Untitled

    Abstract: No abstract text available
    Text: RN3030R Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)15 V(BR)GSS (V) I(D) Max. (A) I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC)


    Original     		PDF RN3030R

    Untitled

    Abstract: No abstract text available
    Text: IXTL21P20 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)21 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)175 Minimum Operating Temp (øC)


    Original     		PDF IXTL21P20

    Untitled

    Abstract: No abstract text available
    Text: 2SK241 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)20.0 V(BR)GSS (V) I(D) Max. (A)30.0m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC)


    Original     		PDF 2SK241

    Untitled

    Abstract: No abstract text available
    Text: RN1020 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)25 V(BR)GSS (V) I(D) Max. (A) I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC)


    Original     		PDF RN1020

    Untitled

    Abstract: No abstract text available
    Text: RN3030 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)15 V(BR)GSS (V) I(D) Max. (A) I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC)


    Original     		PDF RN3030

    Untitled

    Abstract: No abstract text available
    Text: SDFN9240 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)11 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)


    Original     		PDF SDFN9240

    Untitled

    Abstract: No abstract text available
    Text: ZVP2120L Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)300m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)


    Original     		PDF ZVP2120L

    Untitled

    Abstract: No abstract text available
    Text: AOB12T60P/AOTF12T60P 600V,12A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM 48A RDS(ON),max


    Original     		PDF AOB12T60P/AOTF12T60P O-263 O-220F AOB12T60P AOTF12T60P AOB12T60PL AOTF12T60PL O-263

    Untitled

    Abstract: No abstract text available
    Text: AOTF12T50P 500V,12A N-Channel MOSFET General Description Product Summary • Latest Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 600V IDM 48A RDS(ON),max


    Original     		PDF AOTF12T50P O-220F O-220F