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    MOSFET HIGH AMPERE Search Results

    MOSFET HIGH AMPERE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET HIGH AMPERE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    E3P102

    Abstract: NTMSD3P102R2 SMD310 e3p1
    Text: NTMSD3P102R2 Product Preview FETKY P–Channel Enhancement–Mode Power MOSFET and Schottky Diode Dual SO–8 Package http://onsemi.com Features • High Efficiency Components in a Single SO–8 Package • High Density Power MOSFET with Low RDS on , MOSFET


    Original     		PDF NTMSD3P102R2 r14525 NTMSD3P102R2/D E3P102 NTMSD3P102R2 SMD310 e3p1

    E3P303

    Abstract: NTMSD3P303R2 SMD310 279-87
    Text: NTMSD3P303R2 Product Preview FETKY P–Channel Enhancement–Mode Power MOSFET and Schottky Diode Dual SO–8 Package http://onsemi.com Features • High Efficiency Components in a Single SO–8 Package • High Density Power MOSFET with Low RDS on , MOSFET


    Original     		PDF NTMSD3P303R2 r14525 NTMSD3P303R2/D E3P303 NTMSD3P303R2 SMD310 279-87

    NTMSD2P102LR2

    Abstract: SMD310
    Text: NTMSD2P102LR2 Product Preview FETKY Power MOSFET and Schottky Diode Dual SO–8 Package Features • High Efficiency Components in a Single SO–8 Package • High Density Power MOSFET with Low RDS on , http://onsemi.com Schottky Diode with Low VF MOSFET


    Original     		PDF NTMSD2P102LR2 r14525 NTMSD2P102LR2/D NTMSD2P102LR2 SMD310

    TL494

    Abstract: TC429
    Text: SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER TC429 TC429 SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC429 is a high-speed, single CMOS-level translator and driver. Designed specifically to drive highly capacitive power MOSFET gates, the TC429 features 2.5Ω output


    Original     		PDF TC429 75nsec 35nsec 2500pF TL494

    Untitled

    Abstract: No abstract text available
    Text: NTMSD2P102LR2 Product Preview FETKY Power MOSFET and Schottky Diode Dual SO–8 Package Features • High Efficiency Components in a Single SO–8 Package • High Density Power MOSFET with Low RDS on , http://onsemi.com Schottky Diode with Low VF MOSFET


    Original     		PDF NTMSD2P102LR2

    Untitled

    Abstract: No abstract text available
    Text: NTMSD3P303R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , • • • • http://onsemi.com MOSFET


    Original     		PDF NTMSD3P303R2 NTMSD3P303R2/D

    E3P303

    Abstract: NTMSD3P303R2 NTMSD3P303R2G
    Text: NTMSD3P303R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , • • • • http://onsemi.com MOSFET


    Original     		PDF NTMSD3P303R2 NTMSD3P303R2/D E3P303 NTMSD3P303R2 NTMSD3P303R2G

    high-speed power mosfet 2Mhz

    Abstract: TL494 tl494 mosfet SG1524 application note tl494 24v power switch tl494 tl494 application notes TC429CPA TC429 data sheet tl494
    Text: 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER TC429 TC429 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC429 is a high-speed, single CMOS-level translator and driver. Designed specifically to drive highly capacitive power MOSFET gates, the TC429 features 2.5Ω output


    Original     		PDF TC429 TC429 2500pF 25nsec. 60nsec. high-speed power mosfet 2Mhz TL494 tl494 mosfet SG1524 application note tl494 24v power switch tl494 tl494 application notes TC429CPA data sheet tl494

    how mosfet irf540 acts as a regulator

    Abstract: IRFP2504 MIC5012 wiring diagram for ge cr2943 PWM speed control of DC motor using IRF540 IRCZ44 IRF540 diode zener s4 MIC5011 MIC5013BM
    Text: MIC5013 Micrel, Inc. MIC5013 Protected High- or Low-Side MOSFET Driver General Description Features The MIC5013 is an 8-pin MOSFET driver with over-current shutdown and a fault flag. It is designed to drive the gate of an N-channel power MOSFET above the supply rail high-side


    Original     		PDF MIC5013 MIC5013 how mosfet irf540 acts as a regulator IRFP2504 MIC5012 wiring diagram for ge cr2943 PWM speed control of DC motor using IRF540 IRCZ44 IRF540 diode zener s4 MIC5011 MIC5013BM

    IRCZ44 "cross reference"

    Abstract: MIC5013BM KC1000-4T 4n35 optoisolator 12V 30A 4 pin Relay p 818 opto dual high side MOSFET driver with charge pump wiring diagram for ge cr2943 4N35 CONTROL CIRCUIT KC1000
    Text: MIC5013 Micrel MIC5013 Protected High- or Low-Side MOSFET Driver General Description Features The MIC5013 is an 8-pin MOSFET driver with over-current shutdown and a fault flag. It is designed to drive the gate of an N-channel power MOSFET above the supply rail high-side


    Original     		PDF MIC5013 MIC5013 IRCZ44 "cross reference" MIC5013BM KC1000-4T 4n35 optoisolator 12V 30A 4 pin Relay p 818 opto dual high side MOSFET driver with charge pump wiring diagram for ge cr2943 4N35 CONTROL CIRCUIT KC1000

    SVDF8N60F

    Abstract: 8N60
    Text: 8N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 8 AMPERES Description: The WEITRON 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		PDF O-220 01-Apr-2011 O-220 O-220F O-220F 47MAX 75MAX SVDF8N60F 8N60

    e3p1

    Abstract: MOSFET 1052 NTMSD3P102R2 NTMSD3P102R2G NTMSD3P102R2SG
    Text: NTMSD3P102R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , Schottky Diode with Low VF • Independent Pin−Outs for MOSFET and Schottky Die


    Original     		PDF NTMSD3P102R2 NTMD3P102R2/D e3p1 MOSFET 1052 NTMSD3P102R2 NTMSD3P102R2G NTMSD3P102R2SG

    push switch 6 leg

    Abstract: relay 24v 50mA 4N35 CONTROL CIRCUIT MIC5013BM ircz4 IRF540 application MOSFET IRF540 IRCZ44 IRF540 MIC5010
    Text: MIC5013 Micrel MIC5013 Protected High- or Low-Side MOSFET Driver Final Information General Description Features The MIC5013 is an 8-pin MOSFET driver with over-current shutdown and a fault flag. It is designed to drive the gate of an N-channel power MOSFET above the supply rail high-side


    Original     		PDF MIC5013 MIC5013 push switch 6 leg relay 24v 50mA 4N35 CONTROL CIRCUIT MIC5013BM ircz4 IRF540 application MOSFET IRF540 IRCZ44 IRF540 MIC5010

    IRCZ44 "cross reference"

    Abstract: wiring diagram for ge cr2943 12v 10A dc motor mosfet driver PWM dc speed control of DC motor using IRF540 CR2943 IRCZ44 HP opto-isolator Zener Diodes 24v 10w IRFP044 MIC5010
    Text: MIC5013 Micrel MIC5013 Protected High- or Low-Side MOSFET Driver Final Information General Description Features The MIC5013 is an 8-pin MOSFET driver with over-current shutdown and a fault flag. It is designed to drive the gate of an N-channel power MOSFET above the supply rail high-side


    Original     		PDF MIC5013 MIC5013 IRCZ44 "cross reference" wiring diagram for ge cr2943 12v 10A dc motor mosfet driver PWM dc speed control of DC motor using IRF540 CR2943 IRCZ44 HP opto-isolator Zener Diodes 24v 10w IRFP044 MIC5010

    Untitled

    Abstract: No abstract text available
    Text: MTP2P50E Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed


    Original     		PDF MTP2P50E MTP2P50E/D

    MTP12P10G

    Abstract: p-channel to-220 MTP12 MTP12P10
    Text: MTP12P10 Preferred Device Power MOSFET 12 Amps, 100 Volts P−Channel TO−220 This Power MOSFET is designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. 12 AMPERES, 100 VOLTS


    Original     		PDF MTP12P10 O-220 MTP12P10/D MTP12P10G p-channel to-220 MTP12 MTP12P10

    mosfet transistor 400 volts.100 amperes

    Abstract: No abstract text available
    Text: MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed


    Original     		PDF MTB2P50E MTB2P50E/D mosfet transistor 400 volts.100 amperes

    Amp. mosfet 1000 watt

    Abstract: AN569 MTB2P50E MTB2P50ET4 mosfet transistor 400 volts.100 amperes
    Text: MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed


    Original     		PDF MTB2P50E MTB2P50E/D Amp. mosfet 1000 watt AN569 MTB2P50E MTB2P50ET4 mosfet transistor 400 volts.100 amperes

    t2p50e

    Abstract: p50eg AN569 MTB2P50E MTB2P50ET4 MTB2P50ET4G mosfet transistor 400 volts.100 amperes ww h 845 1 r
    Text: MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed


    Original     		PDF MTB2P50E MTB2P50E/D t2p50e p50eg AN569 MTB2P50E MTB2P50ET4 MTB2P50ET4G mosfet transistor 400 volts.100 amperes ww h 845 1 r

    t2p50e

    Abstract: No abstract text available
    Text: MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed


    Original     		PDF MTB2P50E MTB2P50E/D t2p50e

    t1n50e

    Abstract: 1N50E T1-N50E 7-14-C MTD1N50E1 AN569 MTD1N50E MTD1N50ET4 SMD310
    Text: MTD1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N−Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition this advanced high voltage


    Original     		PDF MTD1N50E r14525 MTD1N50E/D t1n50e 1N50E T1-N50E 7-14-C MTD1N50E1 AN569 MTD1N50E MTD1N50ET4 SMD310

    2N40E

    Abstract: 2N40* Central AN569 MTD2N40E MTD2N40ET4 SMD310
    Text: MTD2N40E Preferred Device Power MOSFET 2 Amps, 400 Volts N–Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced high voltage


    Original     		PDF MTD2N40E r14525 MTD2N40E/D 2N40E 2N40* Central AN569 MTD2N40E MTD2N40ET4 SMD310

    2N40E

    Abstract: t2n40e
    Text: MTD2N40E Preferred Device Power MOSFET 2 Amps, 400 Volts N−Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition this advanced high voltage


    Original     		PDF MTD2N40E MTD2N40E/D 2N40E t2n40e

    AN569

    Abstract: MTP1N50E mtp1n
    Text: MTP1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, the MOSFET is designed to


    Original     		PDF MTP1N50E r14525 MTP1N50E/D AN569 MTP1N50E mtp1n