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    MOSFET FK25SM Search Results

    MOSFET FK25SM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET FK25SM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    mosfet fs series

    Abstract: TO-3P
    Text: •NEW HIGH VOLTAGE POWER MOSFET FS SERIES CONTINUED IBUILT-IN HIGH SPEED DIODE POWER MOSFET FK SERIES Electrical characteristics (TYP.) Max. ratings Type No. V « {¥> iß w FK16UM-5 ★ FKI6VS-5 ★ FKI6KM -5 ★ FK16SM-5 ★ FK20UM-5 ★ FK20VS-5 ■


    OCR Scan     		O-220 O-220S O-220FN O-220 T0220S mosfet fs series TO-3P PDF

    MOSFET FK25SM

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FK25SM-5 HIGH-SPEED SWITCHING USE FK25SM-5 OUTLINE DRAWING Dimensions in mm w O '2 4 • VOSS . 250V • rDS ON (MAX) . 0 .1 6 Í 2


    OCR Scan     		FK25SM-5 150ns 571Q-\2 571Q1 571Q2 MOSFET FK25SM PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FK25SM-5 HIGH-SPEED SWITCHING USE FK25SM-5 O UTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 3.2 fc r 4.4 1.0 5.45 5.45 0.6 4 Q w r . .2 5 0 V


    OCR Scan     		FK25SM-5 150ns 57KH23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FK25SM-6 HIGH-SPEED SWITCHING USE FK25SM-6 OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 3.2 fc r 4.4 1.0 5.45 5.45 0.6 4 Q w ' V d s s . .3 0 0 V


    OCR Scan     		FK25SM-6 150ns 571Q1 PDF

    FK25SM-6

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET FK25SM-6 HIGH-SPEED SWITCHING USE FK25SM-6 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr ¡VDSS . 300V


    Original     		FK25SM-6 150ns FK25SM-6 PDF

    FK25SM-5

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET FK25SM-5 HIGH-SPEED SWITCHING USE FK25SM-5 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr ¡VDSS . 250V


    Original     		FK25SM-5 150ns FK25SM-5 PDF

    PIC robot

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FK25SM-6 HIGH-SPEED SWITCHING USE FK25SM-6 OUTLINE DRAWING Dimensions in mm 4.5. 15.9MAX. 1.5 r a ol ‘OjL O 3.2 m 5 .4 5 0.6 jGd fed bk GATE DRAIN »V d s s .3 0 0 V


    OCR Scan     		FK25SM-6 150ns PIC robot PDF

    Untitled

    Abstract: No abstract text available
    Text: m UBEX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 ShOTt Form Ddtd Selector Guide Discrete MOSFET - Medium Voltage (continued) FK Series MOSFETs (250 ~ 600V) Fast Recovery Diode (trr = 150nS) Maximum Ratings, Tc = 25°C


    OCR Scan     		150nS) FK16UM-5 FK16VS-5 FK16KM-5 FK16SM-5 FK20UM-5 FK20VS-5 FK20KM-5 FK20SM-5 FK25SM-5 PDF

    FK25SM-5

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    FK25SM-6

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF