DL2M100N5
Abstract: dawin
Text: D W DAWIN Electronics TM DL2M100N5 May. 2009 500V DUAL N-Channel MOSFET Description Equivalent Circuit and Package DAWIN’S Dual power MOSFET devices are designed for switching applications of high voltage and current. You have to connect external fast recovery diode reverse connected across each MOSFET
|
Original
|
DL2M100N5
250nC
DL2M100N5
dawin
|
PDF
|
MOSFET Drivers pin compatible with
Abstract: No abstract text available
Text: SM74101 SM74101 Tiny 7A MOSFET Gate Driver Literature Number: SNOSBA2 SM74101 Tiny 7A MOSFET Gate Driver General Description Features The SM74101 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package SOT23 equivalent footprint , with improved power dissipation required for high
|
Original
|
SM74101
SM74101
MOSFET Drivers pin compatible with
|
PDF
|
DL2M50N5
Abstract: mosfet 500V 50A Mosfet 100V 50A
Text: D W DAWIN Electronics TM DL2M50N5 May. 2009 500V DUAL N-Channel MOSFET Description Equivalent Circuit and Package DAWIN’S Dual power MOSFET devices are designed for switching applications of high voltage and current. You have to connect external fast recovery diode reverse connected across each MOSFET
|
Original
|
DL2M50N5
150nC
DL2M50N5
mosfet 500V 50A
Mosfet 100V 50A
|
PDF
|
QS6M4
Abstract: No abstract text available
Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 Dimensions Unit : mm Structure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (6) 0.85 0.7 (4) 1.6 2.8 Features 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package.
|
Original
|
|
PDF
|
LM5112MY
Abstract: LM5112
Text: LM5112 LM5112 Tiny 7A MOSFET Gate Driver Literature Number: SNVS234B LM5112 Tiny 7A MOSFET Gate Driver General Description Features The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package SOT23 equivalent footprint or an 8-Lead exposed-pad MSOP package, with
|
Original
|
LM5112
LM5112
SNVS234B
LM5112MY
|
PDF
|
equivalent 2sk2837 mosfet
Abstract: No abstract text available
Text: Power MOSFET Heat Sink Design Power MOSFET in Detail 6. Heat Sink Design 6.1 Maximum Allowable Power Dissipation and Radiation Equivalent Circuits When the circuit has been designed for fully adequate thermal stability, the maximum allowable power dissipation PDmax for power MOSFETs can be determined based on the power MOSFET’s
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU ○Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one
|
Original
|
SSM6E03TU
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one
|
Original
|
SSM6E03TU
|
PDF
|
MTC3N100E
Abstract: SHD218414 SHD218414A SHD218414B
Text: SHD218414 SHD218414A SHD218414B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 780, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 1000 Volt, 3.0 Ohm, 3A MOSFET • Electrically Isolated, Hermetically Sealed • Electrically Equivalent to MTC3N100E
|
Original
|
SHD218414
SHD218414A
SHD218414B
MTC3N100E
MTC3N100E
SHD218414
SHD218414A
SHD218414B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Power MOSFET Electrical Characteristics Power MOSFET in Detail 4. Electrical Characteristics 4.1 Terminology The following is an explanation of main items used to evaluate power MOSFET performance. 1 |Yfs|: forward transfer admittance |Yfs| = ΔID/ΔVGS
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD218414 SHD218414A SHD218414B TECHNICAL DATA DATA SHEET 780, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 1000 Volt, 3.0 Ohm, 3A MOSFET Electrically Isolated, Hermetically Sealed Electrically Equivalent to MTC3N100E MAXIMUM RATINGS
|
Original
|
SHD218414
SHD218414A
SHD218414B
MTC3N100E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD218414 SHD218414A SHD218414B TECHNICAL DATA DATA SHEET 780, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 1000 Volt, 3.0 Ohm, 3A MOSFET Electrically Isolated, Hermetically Sealed Electrically Equivalent to MTC3N100E MAXIMUM RATINGS
|
Original
|
SHD218414
SHD218414A
SHD218414B
MTC3N100E
|
PDF
|
FMV24N25
Abstract: MOSFET 20V 240A fmv24n25g
Text: http://www.fujisemi.com FMV24N25G FUJI POWER MOSFET Super FAP-G series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Equivalent circuit schematic
|
Original
|
FMV24N25G
O-220F
FMV24N25
MOSFET 20V 240A
fmv24n25g
|
PDF
|
UGATE
Abstract: RT9624AZQW
Text: RT9624A Single Phase Synchronous Rectified Buck MOSFET Driver General Description Features The RT9624A is a high frequency, synchronous rectified, single phase MOSFET driver designed for normal MOSFET driving applications and high performance CPU VR driving
|
Original
|
RT9624A
RT9624A
DS9624A-06
UGATE
RT9624AZQW
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: RT9624C Single Phase Synchronous Rectified Buck MOSFET Driver General Description Features The RT9624C is a high frequency, synchronous rectified, single phase MOSFET driver designed for normal MOSFET driving applications and high performance CPU VR driving
|
Original
|
RT9624C
RT9624C
500kHz.
DS9624C-00
|
PDF
|
L6741
Abstract: JESD97 L6741TR
Text: L6741 High current MOSFET driver Features • Dual MOSFET driver for synchronous rectified converters ■ High driving current for fast external MOSFET switching ■ High frequency operation ■ Integrated bootstrap diode ■ Adaptive dead-time management
|
Original
|
L6741
L6741
JESD97
L6741TR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD225409 TECHNICAL DATA DATA SHEET 871, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: -100 Volt, 0.21 Ohm, -13A MOSFET Hermetic Metal Package Fast Switching Electrically Equivalent to IRFY9140 Series MAXIMUM RATINGS
|
Original
|
SHD225409
IRFY9140
SHD225409
O-254
|
PDF
|
IXTM20N60
Abstract: SHD239607 mosfet 300V 10A type
Text: SHD239607 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 600 Volt, 0.35 Ohm MOSFET • Isolated and Hermetically Sealed • Surface Mount Package • Electrically equivalent to IXTM20N60 MAXIMUM RATINGS
|
Original
|
SHD239607
IXTM20N60
IXTM20N60
SHD239607
mosfet 300V 10A type
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RT9625A Dual-Channel Synchronous Rectified MOSFET Driver General Description Features The RT9625A is a high frequency, synchronous rectified, two phase MOSFET driver designed for normal MOSFET driving applications and high performance CPU VR driving capabilities.
|
Original
|
RT9625A
RT9625A
500kHz.
DS9625A-03
|
PDF
|
Untitled
Abstract: No abstract text available
Text: L6741 High current MOSFET driver Features • Dual MOSFET driver for synchronous rectified converters ■ High driving current for fast external MOSFET switching ■ High frequency operation ■ Integrated bootstrap diode ■ Adaptive dead-time management
|
Original
|
L6741
L6741
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RT9625B Dual-Channel Synchronous Rectified MOSFET Driver General Description Features The RT9625B is a high frequency, synchronous rectified, two phase MOSFET driver designed for normal MOSFET driving applications and high performance CPU VR driving capabilities.
|
Original
|
RT9625B
RT9625B
500kHz.
DS9625B-03
|
PDF
|
Diode 1754
Abstract: No abstract text available
Text: RT9624D Single Phase Synchronous Rectified Buck MOSFET Driver General Description Features The RT9624D is a high frequency, synchronous rectified, single phase MOSFET driver designed for normal MOSFET driving applications and high performance CPU VR driving
|
Original
|
RT9624D
RT9624D
500kHz.
DS9624D-00
Diode 1754
|
PDF
|
RT9625
Abstract: No abstract text available
Text: RT9625A Dual-Channel Synchronous Rectified MOSFET Driver General Description Features The RT9625A is a high frequency, synchronous rectified, two phase MOSFET driver designed for normal MOSFET driving applications and high performance CPU VR driving capabilities.
|
Original
|
RT9625A
RT9625A
500kHz.
DS9625A-02
RT9625
|
PDF
|
Untitled
Abstract: No abstract text available
Text: [ /Title RFF70 N06 /Subject (25A, 60V, 0.025 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, N-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998
|
Original
|
RFF70N06
RFF70N06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
|
PDF
|
