TRANSISTOR SMD MARKING CODE QR
Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11
Text: DF N2 020 -6 PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium
|
Original
|
PDF
|
PMC85XP
DFN2020-6
OT1118)
TRANSISTOR SMD MARKING CODE QR
MOSFET TRANSISTOR SMD MARKING CODE NA
MOSFET TRANSISTOR SMD MARKING CODE 11
|
FDD8796
Abstract: FDU8796 247a SWITCHER
Text: LE A REE I DF M ENTATIO LE N MP FDD8796/FDU8796 N-Channel PowerTrench MOSFET 25V, 35A, 5.7mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
|
Original
|
PDF
|
FDD8796/FDU8796
FDD8796/FDU8796
FDD8796
FDU8796
247a SWITCHER
|
FDD8780
Abstract: FDD8780 equivalent FDU8780
Text: LE A REE I DF M ENTATIO LE N MP FDD8780/FDU8780 N-Channel PowerTrench MOSFET 25V, 35A, 8.5mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
|
Original
|
PDF
|
FDD8780/FDU8780
FDD8780/FDU8780
FDD8780
FDD8780 equivalent
FDU8780
|
fdd8780
Abstract: FDU8780
Text: LE A REE I DF M ENTATIO LE N MP FDD8780/FDU8780 N-Channel PowerTrench MOSFET 25V, 35A, 8.5mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
|
Original
|
PDF
|
FDD8780/FDU8780
fdd8780
FDU8780
|
Untitled
Abstract: No abstract text available
Text: IXKF 40N60SCD1 ID25 VDSS RDSon typ. trr CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode = = = = 38 A 600 V Ω 60 mΩ 70 ns in High Voltage ISOPLUS i4-PACTM Preliminary data 5 DS DF T 1 2 Features MOSFET T Symbol Conditions
|
Original
|
PDF
|
40N60SCD1
|
fdd8780
Abstract: No abstract text available
Text: REE I DF LE A M ENTATIO LE N MP FDD8780/FDU8780 N-Channel PowerTrench MOSFET 25V, 35A, 8.5mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
|
Original
|
PDF
|
FDD8780/FDU8780
FDD8780/FDU8780
fdd8780
|
Untitled
Abstract: No abstract text available
Text: REE I DF LE A M ENTATIO LE N MP FDD8770/FDU8770 N-Channel PowerTrench MOSFET 25V, 35A, 4.0mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
|
Original
|
PDF
|
FDD8770/FDU8770
|
Untitled
Abstract: No abstract text available
Text: REE I DF LE A M ENTATIO LE N MP FDD8796/FDU8796 N-Channel PowerTrench MOSFET 25V, 35A, 5.7mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
|
Original
|
PDF
|
FDD8796/FDU8796
FDD8796/FDU8796
|
FDD8770
Abstract: FDD8770 equivalent FDU8770
Text: LE A REE I DF M ENTATIO LE N MP FDD8770/FDU8770 N-Channel PowerTrench MOSFET 25V, 35A, 4.0mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
|
Original
|
PDF
|
FDD8770/FDU8770
FDD8770
FDD8770 equivalent
FDU8770
|
FDD8782
Abstract: FDU8782 TO-251 fairchild FDD8782/FDU8782
Text: LE A REE I DF M ENTATIO LE N MP FDD8782/FDU8782 N-Channel PowerTrench MOSFET 25V, 35A, 11mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
|
Original
|
PDF
|
FDD8782/FDU8782
FDD8782
FDU8782
TO-251 fairchild
FDD8782/FDU8782
|
Untitled
Abstract: No abstract text available
Text: IXKF 40N60SCD1 COOLMOS * Power MOSFET ID25 VDSS RDSon typ. trr with Series Schottky Diode and Ultra Fast Antiparallel Diode = = = = 38 A 600 V Ω 60 mΩ 70 ns in High Voltage ISOPLUS i4-PACTM Preliminary data 5 DS DF T 1 1 2 2 5 Features MOSFET T Symbol
|
Original
|
PDF
|
40N60SCD1
|
Untitled
Abstract: No abstract text available
Text: IXKF 40N60SCD1 ID25 VDSS RDSon typ. trr CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode = = = = 38 A 600 V Ω 60 mΩ 70 ns in High Voltage ISOPLUS i4-PACTM Preliminary data 5 DS DF T 1 1 2 2 5 Features MOSFET T Symbol Conditions
|
Original
|
PDF
|
40N60SCD1
|
MOSFET TRANSISTOR SMD MARKING CODE 11
Abstract: P-CHANNEL MOSFET
Text: 020 -6 PMC85XP DF N2 30 V P-channel MOSFET with pre-biased NPN transistor Rev. 1 — 24 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium
|
Original
|
PDF
|
PMC85XP
DFN2020-6
OT1118)
MOSFET TRANSISTOR SMD MARKING CODE 11
P-CHANNEL MOSFET
|
ultra low power mosfet fast switching
Abstract: MOSFET and parallel Schottky diode 40N60SCD1 E72873
Text: IXKF 40N60SCD1 CoolMOS 1 Power MOSFET ID25 VDSS RDSon typ. trr with Series Schottky Diode and Ultra Fast Antiparallel Diode = = = = 38 A 600 V Ω 60 mΩ 70 ns in High Voltage ISOPLUS i4-PAC™ Preliminary data 5 DS DF 1 T 2 1 5 E72873 2 Features MOSFET T
|
Original
|
PDF
|
40N60SCD1
E72873
20080526a
ultra low power mosfet fast switching
MOSFET and parallel Schottky diode
40N60SCD1
E72873
|
|
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PDF
|
PMXB65UPE
DFN1010D-3
OT1215)
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PDF
|
PMXB56EN
DFN1010D-3
OT1215)
|
Untitled
Abstract: No abstract text available
Text: DF N1 10B -6 PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 7 October 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic
|
Original
|
PDF
|
PMCXB900UE
DFN1010B-6
OT1216)
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 13 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PDF
|
PMXB65ENE
DFN1010D-3
OT1215)
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 27 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PDF
|
PMXB40UNE
DFN1010D-3
OT1215)
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PDF
|
PMXB40UNE
DFN1010D-3
OT1215)
|
Untitled
Abstract: No abstract text available
Text: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
|
Original
|
PDF
|
PMPB40SNA
DFN2020MD-6
OT1220)
AEC-Q101
|
J846
Abstract: 20 ampere MOSFET 900Volts JS46
Text: 7294621 POWEREX INC 98D "ifi dF 0271S D ~ | 72=141,21 G D a a V l S b | J846 Powerex, Inc., Hiilis Street, Youngwood, Pennsylvania 15697 412 925-7272 Tentative Single EXMOS MOSFET 3 Amperes/900 Volts Description O U T L IN E O R A M N O Powerex Single EXMOS™ MOSFET
|
OCR Scan
|
PDF
|
0271S
Amperes/900
O-220F
J846
20 ampere MOSFET
900Volts
JS46
|
Untitled
Abstract: No abstract text available
Text: JÜ0MERSÍ 7294621 § POWEREX "iß INC dF | aGoa?fl7 ^ ; T-39-13 JS010504 Tentative Single EXMOS MOSFET Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 40 Amperes/50 Volts Dimension A Inches .787 Millimeters 20 B .614 15.6 C .214 ± .0 0 8
|
OCR Scan
|
PDF
|
T-39-13
JS010504
Amperes/50
JS010504
|
SEMCO
Abstract: arco capacitors 422 arco capacitors DU1215S arco TRIMMER capacitor
Text: _ S 6 4 2 2 0 S M/A-COM P H I M/A-COM P H I I NC_ INC ÛS dF 05D 0 0 4 2 2 O T - ; ? - ^ | 5b42205 GQGDMaa fl N-CHANNEL RF POWER MOSFET DU1215S ^ M / A -C O M PHI, INC. FEATURES • UNIQUE NEW MOSFET STRUCTURE ■ LOWER CAPACITANCES FOR BROADBAND OPERATION
|
OCR Scan
|
PDF
|
s64220s
DU1215S
0-j15
Sb45EDS
SEMCO
arco capacitors 422
arco capacitors
DU1215S
arco TRIMMER capacitor
|
