POWER MOSFET
Abstract: power mosfet low vgs 2SK3270-01 mosfet amplifiers mosfet power amplifier mosfet low vgs 100 W POWER MOSFET
Text: 2SK3270-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features TO-220AB High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters
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2SK3270-01
O-220AB
-51MHz
POWER MOSFET
power mosfet low vgs
2SK3270-01
mosfet amplifiers
mosfet power amplifier
mosfet low vgs
100 W POWER MOSFET
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2sk3271
Abstract: MOSFET 20V 100A 2SK3271-01 100A Mosfet POWER MOSFET mosfet low vgs power mosfet low vgs 30V 50A mosfet N-Channel Silicon Power sd 3874
Text: 2SK3271-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof TO-3P Applications Switching regulators DC-DC converters
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2SK3271-01
2sk3271
MOSFET 20V 100A
2SK3271-01
100A Mosfet
POWER MOSFET
mosfet low vgs
power mosfet low vgs
30V 50A mosfet
N-Channel Silicon Power
sd 3874
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POWER MOSFET
Abstract: mosfet power amplifier 2SK3273-01MR mosfet low vgs
Text: 2SK3273-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features TO-220F High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters
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2SK3273-01MR
O-220F
POWER MOSFET
mosfet power amplifier
2SK3273-01MR
mosfet low vgs
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MCH3307
Abstract: SBS004 ENN8235 2171A
Text: CPH5838 Ordering number : ENN8235 CPH5838 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converters. Composite type with a P-Channel Sillicon MOSFET MCH3307 and a Schottky Barrier Diode (SBS004)
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CPH5838
ENN8235
MCH3307)
SBS004)
MCH3307
SBS004
ENN8235
2171A
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VEC2803
Abstract: No abstract text available
Text: VEC2803 Ordering number : ENN8202 VEC2803 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features DC/DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
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VEC2803
ENN8202
VEC2803
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Untitled
Abstract: No abstract text available
Text: CPH5822 Ordering number : ENN7702 CPH5822 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General Purpose Switching Device Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS010M)
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ENN7702
CPH5822
MCH3312)
SBS010M)
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Untitled
Abstract: No abstract text available
Text: Ordering num ber: EN 4893 _FX853 No.4893 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC/DC Converter Applications F eatu res • Composite type composed of a low ON-resistance N-channel MOSFET for ultrahigh-speed switching
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FX853
FX853
2SK1467
SB05-05P,
10//S,
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diode N1004
Abstract: CPH5822 MCH3312 N1004 SBS010M
Text: CPH5822 Ordering number : ENN7702A CPH5822 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS010M)
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CPH5822
ENN7702A
MCH3312)
SBS010M)
diode N1004
CPH5822
MCH3312
N1004
SBS010M
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CPH5839
Abstract: MCH3409 SBS005 MARKING X.R
Text: CPH5839 Ordering number : ENN8181 CPH5839 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converter applications. Composite type with a N-Channel Sillicon MOSFET MCH3409 and a schottky barrier diode (SBS005)
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CPH5839
ENN8181
MCH3409)
SBS005)
CPH5839
MCH3409
SBS005
MARKING X.R
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CPH5821
Abstract: MCH3312 SBS004 marking qx
Text: CPH5821 Ordering number : ENN7701 CPH5821 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS004)
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CPH5821
ENN7701
MCH3312)
SBS004)
CPH5821
MCH3312
SBS004
marking qx
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w503
Abstract: D2502 FW503 MCH3306 SBS004 Schottky Barrier 3A ENN7312
Text: Ordering number : ENN7312 FW503 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FW503 DC / DC Converter Applications Composite type with a low ON-resistance, ultrahighunit : mm speed switching, low voltage drive, P-channel 2210 MOSFET and a short reverse recovery time, low
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ENN7312
FW503
FW503
MCH3306
SBS004
FW503]
w503
D2502
Schottky Barrier 3A
ENN7312
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Untitled
Abstract: No abstract text available
Text: 2SK3518-01MR FUJI POWER MOSFET 2SK3518-01MR FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings Features 1 10 Applications o Zth ch-c [ C/W] 10 -1 Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 10
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2SK3518-01MR
O-220F
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a0670-1
Abstract: CPH5855
Text: CPH5855 Ordering number : ENA0670 CPH5855 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • DC / DC converters. Features • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package
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CPH5855
ENA0670
A0670-6/6
a0670-1
CPH5855
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MCH3406
Abstract: SBS010M CPH5831
Text: CPH5831 Ordering number : ENN8220 CPH5831 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converters. Composite type with a N-Channel Silicon MOSFET MCH3406 and a Schottky Barrier Diode (SBS010M) contained
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CPH5831
ENN8220
MCH3406)
SBS010M)
MCH3406
SBS010M
CPH5831
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9012m
Abstract: 10BQ040 IRF7811W
Text: PD-94031A IRF7811W HEXFET Power MOSFET for DC-DC Converters • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented
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PD-94031A
IRF7811W
IRF7811W
9012m
10BQ040
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circuit diagram of very long range remote control
Abstract: IC 567 8pin hk relay 12v 5 pin MD-5031 2314 mosfet amp 4546 marking 221 sop8 MD5031T
Text: CAT.No.TU 174 mMD5031T. DC-DC Converter Power IC Control IC and Power MOSFET incorporated in SOP8 Package MD5031T is a non-isolated, step down DC to DC converter power IC incorporating a main switch MOSFET and control circuit on a single chip. Using surface mount SOP8
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MMD5031T
MD5031T
F6270-8000
circuit diagram of very long range remote control
IC 567 8pin
hk relay 12v 5 pin
MD-5031
2314 mosfet
amp 4546
marking 221 sop8
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4514v
Abstract: circuit diagram of very long range remote control amp 4546 marking 221 sop8 ic 4514 applications A 4514V A 4514v 8 pin
Text: CAT.No.TU 173-1 UMD5021T DC-DC Converter Power IC Control IC and Power MOSFET incorporated in SOP8 Package MD5021T is a non-isolated, step down DC to DC converter power IC incorporating a main switch MOSFET and control circuit on a single chip. Using surface mount SOP8
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MMD5021T
MD5021T
4514v
circuit diagram of very long range remote control
amp 4546
marking 221 sop8
ic 4514 applications
A 4514V
A 4514v 8 pin
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IRF7822
Abstract: I*7822 ST 9427 10BQ040
Text: PD - 94279 IRF7822 HEXFET Power MOSFET for DC-DC Converters • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented
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IRF7822
IRF7822
I*7822
ST 9427
10BQ040
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10BQ040
Abstract: IRF7811W 9012m
Text: PD-94031 IRF7811W HEXFET Power MOSFET for DC-DC Converters • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented
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PD-94031
IRF7811W
IRF7811W
10BQ040
9012m
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10BQ040
Abstract: EIA-541 IRF7828 MS-012AA
Text: PD - 94602 IRF7828 HEXFET Power MOSFET for DC-DC Converters • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented
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IRF7828
IRF7828
EIA-481
EIA-541.
10BQ040
EIA-541
MS-012AA
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inverters circuit diagram igbt
Abstract: MOSFET FOR 50HZ SWITCHING APPLICATIONS power inverters circuit diagram
Text: PSDM-6 Driver Modules www.schurter.com/pg86 DC/DC Converter for IGBT- or MOSFET Driver Modules 600V IGBT/MOSFET Driver modules with integrated DC/DC converter PSDM-6O Data transfer via transformer PSDM-6T (Data transfer via optocoupler) Description – Driver module for safe driving of IGBT or MOSFET power
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com/pg86
PSDM-0DN1-5040
inverters circuit diagram igbt
MOSFET FOR 50HZ SWITCHING APPLICATIONS
power inverters circuit diagram
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AN1897
Abstract: APP1897 MAX1742 MAX8655 mathcad SEPIC mathcad buck INDUCTOR DESIGN app abstract laptop mosfet SCHEMATIC
Text: Maxim > App Notes > Power-supply circuits Prototyping and PC-board layout Keywords: DC-DC, power supply, DC-DC converter, MOSFET, MOSFET gate capacitance, load and line regulation capacitance, total gate charge, PWM, PFM, DC resistance, DCR, load regulation
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AAX8655
MAX8686
com/an1897
AN1897,
APP1897,
Appnote1897,
AN1897
APP1897
MAX1742
MAX8655
mathcad SEPIC
mathcad buck INDUCTOR DESIGN
app abstract
laptop mosfet SCHEMATIC
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Untitled
Abstract: No abstract text available
Text: VEC2813 Ordering number : ENA0384 VEC2813 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package
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VEC2813
ENA0384
A0384-6/6
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VEC2811
Abstract: 82871
Text: VEC2811 Ordering number : ENN8287 VEC2811 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC/DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
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VEC2811
ENN8287
VEC2811
82871
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