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    MOSFET DATA BOOK Search Results

    MOSFET DATA BOOK Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET DATA BOOK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet K 2865

    Abstract: BF1107 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF1107 N-channel single gate MOSFET Product specification Supersedes data of 1998 Apr 07 File under Discrete Semiconductors, SC07 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOSFET


    Original     		PDF M3D088 BF1107 BF1107 SCA60 115102/00/02/pp8 mosfet K 2865 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING

    Mosfet J49

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF171A N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz MOSFET BROADBAND


    Original     		PDF MRF171A Mosfet J49

    uPA2352

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2352 Dual N-CHANNEL MOSFET DESCRIPTION OUTLINE DRAWING Unit: mm The μPA2352 is a Dual N-channel MOSFET designed for LithiumIon battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection


    Original     		PDF PA2352 PA2352 uPA2352

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2352T1P DUAL Nch MOSFET DESCRIPTION OUTLINE DRAWING Unit: mm The μ PA2352T1P is a Dual N-channel MOSFET designed for Lithium-Ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection


    Original     		PDF PA2352T1P PA2352T1P

    2mosfet Nch

    Abstract: nec li ion G17995EJ1V0DS
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2350 DUAL Nch MOSFET FOR SWITCHING DESCRIPTION OUTLINE DRAWING Unit: mm The μPA2350 is a Dual N-channel MOSFET designed for Li-ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection


    Original     		PDF PA2350 PA2350 2mosfet Nch nec li ion G17995EJ1V0DS

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2351 DUAL Nch MOSFET FOR SWITCHING DESCRIPTION OUTLINE DRAWING Unit: mm The μPA2351 is a Dual N-channel MOSFET designed for Li-ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection


    Original     		PDF PA2351 PA2351

    Mosfet J49

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz MOSFET BROADBAND RF POWER FET


    Original     		PDF MRF171A/D MRF171A MRF171A Mosfet J49

    G1974

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2351T1P DUAL Nch MOSFET FOR SWITCHING OUTLINE DRAWING Unit: mm DESCRIPTION The μ PA2351T1P is a Dual N-channel MOSFET designed for Lithium-Ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection


    Original     		PDF PA2351T1P PA2351T1P G1974

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2350T1P DUAL Nch MOSFET FOR SWITCHING DESCRIPTION OUTLINE DRAWING Unit: mm The μ PA2350T1P is a Dual N-channel MOSFET designed for Lithium-Ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection


    Original     		PDF PA2350T1P PA2350T1P

    PA2352B

    Abstract: aag2
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2352B DUAL N-CHANNEL MOSFET OUTLINE DRAWING Unit: mm DESCRIPTION The μ PA2352B is a Dual N-channel MOSFET designed for Lithium-Ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection


    Original     		PDF PA2352B PA2352B aag2

    PA2354

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2354 DUAL N-CHANNEL MOSFET OUTLINE DRAWING Unit: mm DESCRIPTION The μ PA2354 is a Dual N-channel MOSFET designed for Lithium-Ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection


    Original     		PDF PA2354 PA2354

    PA2350B

    Abstract: G19313EJ1V0DS
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2350B DUAL N-CHANNEL MOSFET FOR SWITCHING OUTLINE DRAWING Unit: mm DESCRIPTION The μ PA2350B is a Dual N-channel MOSFET designed for Lithium-Ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection


    Original     		PDF PA2350B PA2350B G19313EJ1V0DS

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2353 DUAL N-CHANNEL MOSFET FOR SWITCHING OUTLINE DRAWING Unit: mm DESCRIPTION The μ PA2353 is a Dual N-channel MOSFET designed for Lithium-Ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection


    Original     		PDF PA2353 PA2353

    D1781

    Abstract: 2SK1588 TC-2352A
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1588 N-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1588 is an N-channel vertical type MOSFET which 4.5 ±0.1 can be driven by 2.5 V power supply. As the MOSFET is driven by low voltage and does not


    Original     		PDF 2SK1588 2SK1588 D1781 TC-2352A

    d1780

    Abstract: 2SK1657 TC236
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1657 N-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1657 is an N-channel vertical type MOSFET which 2.8 ±0.2 0.4 +0.1 –0.05 can be driven by 2.5 V power supply. As the MOSFET is low Gate Leakage Current, it is suitable for


    Original     		PDF 2SK1657 2SK1657 SC-59 d1780 TC236

    sd 431 transistor

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4058 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4058 is N-channel MOSFET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4058-S15-AY


    Original     		PDF 2SK4058 2SK4058 2SK4058-S15-AY O-251 O-252 2SK4058-ZK-E1-AY 2SK4058-ZK-E2-AY O-251) sd 431 transistor

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4057 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4057-S15-AY


    Original     		PDF 2SK4057 2SK4057 2SK4057-S15-AY 2SK4057-ZK-E1-AY 2SK4057-ZK-E2-AY O-251 O-252

    905-170

    Abstract: MRF3010 VK200 VK20019-4B
    Text: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,


    Original     		PDF MRF3010/D MRF3010 905-170 MRF3010 VK200 VK20019-4B

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,


    Original     		PDF MRF3010/D MRF3010 MRF3010 MRF3010/D

    MOSFET BOOK

    Abstract: book mosfet
    Text: 1233-7091 Septem ber 1997 Advanced Power MOSFET High Voltagei 700~~900\ ' 1998 DATA BOOK ELECTRONICS


    OCR Scan     		PDF

    C549B

    Abstract: C556A POWER MOSFET DATA BOOK GFB50N03 GUR460 List of rectifier MOSFET BC337 1N414* zener MOSFET BOOK k mbrf10
    Text: ALPHANUMERICAL LIST OF ALL GENERAL SEMICONDUCTOR TYPES Note: Listed below are General Semiconductor’s part numbers, along with the Data Book in which they appear. For MOSFET page references, see the MOSFET Device Index on pages 5 in this book. 1 5KA6.8 thru 1.5KA43A .Zener/TVS


    OCR Scan     		PDF 5KA43A 5KE440CA 1N746 1N759 1N957 UF4001 UF4007 UF5400 UF5408 UG06A C549B C556A POWER MOSFET DATA BOOK GFB50N03 GUR460 List of rectifier MOSFET BC337 1N414* zener MOSFET BOOK k mbrf10

    j718

    Abstract: VK200/10-3B
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field E ffect Transistor N-Channel Enhancement-Mode Lateral MOSFET l o w , 1.6 GHz, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,


    OCR Scan     		PDF MRF3010 DL110/D) MRF3010 VK200 j718 VK200/10-3B

    IRFZ44N

    Abstract: FP60N bs108 mosfet fp75n FP50N
    Text: MOSFET DEVICE INDEX Note: For a complete listing of General Semiconductor part numbers, refer to the Master Data Book Index on pages 6-11. 2N7000 . 220


    OCR Scan     		PDF 2N7000 2N7002 BS108 BS170 BS250 BS850 FP70N FP75N IRFZ44N IRFZ44NS IRFZ44N FP60N bs108 mosfet FP50N

    MOSFET BOOK

    Abstract: No abstract text available
    Text: ft 1232-7091 Septem ber 1997 Advanced Power MOSFET^ Medium Voltage 200 ~ 600 V 1998 DATA BOOK E L E C T R O N IC S


    OCR Scan     		PDF