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    MOSFET BASED H BRIDGE Search Results

    MOSFET BASED H BRIDGE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET BASED H BRIDGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4082IBZ

    Abstract: HIP4082 HIP4082IP HIP4082IPZ without pwm hip4082 design HIP4080A HIP4081 HIP4081A HIP4082IB HIP4082IBZ
    Text: 80V, 1.25A Peak Current H-Bridge FET Driver Features The HIP4082 is a medium frequency, medium voltage H-Bridge N-Channel MOSFET driver IC, available in 16 lead plastic SOIC N and DIP packages. Specifically targeted for PWM motor control and UPS applications, bridge based designs are made simple and


    Original     		PDF HIP4082 95VDC 1000pF FN3676 4082IBZ HIP4082IP HIP4082IPZ without pwm hip4082 design HIP4080A HIP4081 HIP4081A HIP4082IB HIP4082IBZ

    AOD604

    Abstract: AOD604L MJ5025
    Text: AOD604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD604 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other


    Original     		PDF AOD604 AOD604 AOD604L O-252 MJ5025

    AOD604

    Abstract: complementary MOSFET TO252
    Text: AOD604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD604 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other


    Original     		PDF AOD604 AOD604L O-252 complementary MOSFET TO252

    aod606

    Abstract: AOD606L
    Text: AOD606 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other


    Original     		PDF AOD606 AOD606L O-252-4L

    Untitled

    Abstract: No abstract text available
    Text: AOD606 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other


    Original     		PDF AOD606 AOD606 O-252-4L

    Untitled

    Abstract: No abstract text available
    Text: AOD606 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other


    Original     		PDF AOD606 AOD606 O-252

    Untitled

    Abstract: No abstract text available
    Text: AOD606 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other


    Original     		PDF AOD606 AOD606 O-252-4L

    Untitled

    Abstract: No abstract text available
    Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN845 Matching System Dead Time to MOSFET Parameters in ZVS Circuits by Sanjay Havanur Medium- and high-voltage power MOSFETs are used in a variety of isolated converter topologies, such as half- or full-bridges


    Original     		PDF AN845 06-Oct-14

    AOD604

    Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
    Text: AOD604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD604 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other


    Original     		PDF AOD604 AOD604 O-252-5L N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A

    AOD606

    Abstract: aod606 datasheet
    Text: AOD606 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other


    Original     		PDF AOD606 AOD606 O-252-4L Symb06 aod606 datasheet

    AOD606

    Abstract: transistor 45 f 122 NAV70 AOD606L mj5025
    Text: AOD606 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other


    Original     		PDF AOD606 AOD606 AOD606L O-252-4L transistor 45 f 122 NAV70 mj5025

    Untitled

    Abstract: No abstract text available
    Text: AOD606 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other


    Original     		PDF AOD606 AOD606 O-252-4L

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. D Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE


    Original     		PDF SPM6M080-010D 125oC

    SPM6M080-010D

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6M080-010D SPM6M060-025D TECHNICAL DATA Datasheet 4118, Rev. F Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 V/ 80 AMP, 250V/60A THREE PHASE MOSFET BRIDGE Tj=25 C UNLESS OTHERWISE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE


    Original     		PDF SPM6M080-010D SPM6M060-025D 50V/60A SPM6M080-010D

    SPM6M080-010D-B

    Abstract: 210C DS34C87 SFH6186-4 SPM6M080-010D IN 4118 low side pwm drive optocoupler high side MOSFET G 15 Amp 100 volt mosfet BTEMP
    Text: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. D.2 Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE


    Original     		PDF SPM6M080-010D SPM6M080-010D-B 210C DS34C87 SFH6186-4 SPM6M080-010D IN 4118 low side pwm drive optocoupler high side MOSFET G 15 Amp 100 volt mosfet BTEMP

    IRS20955SPBF

    Abstract: No abstract text available
    Text: IRS20955 S PbF Data Sheet No. PD60303 IRS20955(S)PbF PROTECTED DIGITAL AUDIO DRIVER Features • • • • • • • • Product Summary Floating PWM input enables easy half-bridge implementation Programmable bidirectional over-current protection with self-reset function


    Original     		PDF IRS20955 PD60303 16-Lead IRS20955SPbF IRS20955STRPbF IRS20955SPBF

    IRS20955STRPBF

    Abstract: IRS20957 IRS20955S IRS20955 irs*20955s IRS20955SPBF 1N4002 AN-978 BAV21 VB-20
    Text: IRS20955 S PbF Not recommended for new design Please refer to IRS20957 Data Sheet No. PD60303 IRS20955(S)PbF PROTECTED DIGITAL AUDIO DRIVER Features • • • • • • • • Product Summary Floating PWM input enables easy half-bridge implementation


    Original     		PDF IRS20955 IRS20957 PD60303 16-Lead IRS20955SPbF IRS20955STRPbF SO-16 IRS20955STRPBF IRS20957 IRS20955S irs*20955s IRS20955SPBF 1N4002 AN-978 BAV21 VB-20

    IRS20955

    Abstract: IRS20957 IRS20955S mofet amplifier circuit diagram 1N4002 AN-978 BAV21 VB-20 13001 sd to 220 TRANSISTOR equivalent transistor 13001 TO 92
    Text: IRS20955 S PbF Not recommended for new design Please refer to IRS20957 Data Sheet No. PD60303 IRS20955(S)PbF PROTECTED DIGITAL AUDIO DRIVER Features • • • • • • • • Product Summary Floating PWM input enables easy half-bridge implementation


    Original     		PDF IRS20955 IRS20957 PD60303 16-Lead IRS20955SPbF IRS20955STRPbF SO-16 IRS20957 IRS20955S mofet amplifier circuit diagram 1N4002 AN-978 BAV21 VB-20 13001 sd to 220 TRANSISTOR equivalent transistor 13001 TO 92

    IRS20955PBF

    Abstract: IRS20955 IRS20955S irs*20955s IRS20955SPBF 1N4002 AN-978 BAV21 MS-012AC VB-20
    Text: PRELIMINARY Data Sheet No. PD60303 IRS20955 S PbF PROTECTED DIGITAL AUDIO DRIVER Features • · · · · · · · Product Summary Floating PWM input enables easy half-bridge implementation Programmable bidirectional over-current protection with self-reset function


    Original     		PDF PD60303 IRS20955 16-Lead IRS20955PbF IRS20955SPbF IRS20955STRPbF IRS20955PBF IRS20955S irs*20955s IRS20955SPBF 1N4002 AN-978 BAV21 MS-012AC VB-20

    IRS20955S

    Abstract: IRS20955 transistor 13001 TO 92 transistor x 13001 IRS20955SPBF 13001 sd to 220 TRANSISTOR equivalent 1N4002 AN-978 BAV21 MS-012AC
    Text: Data Sheet No. PD60303 IRS20955 S PbF PROTECTED DIGITAL AUDIO DRIVER Features • • • • • • • • Product Summary Floating PWM input enables easy half-bridge implementation Programmable bidirectional over-current protection with self-reset function


    Original     		PDF PD60303 IRS20955 IRS20955S transistor 13001 TO 92 transistor x 13001 IRS20955SPBF 13001 sd to 220 TRANSISTOR equivalent 1N4002 AN-978 BAV21 MS-012AC

    SPM6M080-010D

    Abstract: SPM6M060-025D 010D
    Text: SENSITRON SEMICONDUCTOR SPM6M080-010D SPM6M060-025D TECHNICAL DATA Datasheet 4118, Rev. E Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 V/ 80 AMP, 250V/60A THREE PHASE MOSFET BRIDGE Tj=25 C UNLESS OTHERWISE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE


    Original     		PDF SPM6M080-010D SPM6M060-025D 50V/60A SPM6M080-010D SPM6M060-025D 010D

    IRS20955

    Abstract: PD60303 IRS20955S IRS20955STRPBF 1N4002 AN-978 BAV21 MS-012AC VB-20 transistor 13001 TO 92
    Text: IRS20955 S PbF Data Sheet No. PD60303 IRS20955(S)PbF PROTECTED DIGITAL AUDIO DRIVER Features • • • • • • • • Product Summary Floating PWM input enables easy half-bridge implementation Programmable bidirectional over-current protection with self-reset function


    Original     		PDF IRS20955 PD60303 16-Lead IRS20955SPbF IRS20955STRPbF SO-16 PD60303 IRS20955S IRS20955STRPBF 1N4002 AN-978 BAV21 MS-012AC VB-20 transistor 13001 TO 92

    HIP4086

    Abstract: HIP4086AB
    Text: fC l H A R R HIP4086 IS S E M I C O N D U C T O R 80V, 0.5A Three Phase Driver January 1998 Description Features • The HIP4086 is a Three Phase Bridge N-Channel MOSFET driver IC. The HIP4086 is specifically targeted for PWM motor control. It makes bridge based designs simple and


    OCR Scan     		PDF HIP4086 HIP4086 HIP4081, HIP4081 HIP4082. HIP4086AB

    1M4148

    Abstract: 1N41448 1M4148 diode BC327 circuit example 12-0-12 1A transformer Transistor BC327 Q1 12-0-12 transformer design 12-0-12 transformer used 12v dc supply BC337 circuit example HCF4093
    Text: /T T SGS-THOMSON * 7# . [ f f lD S S & IC T M S O g i TECHNICAL NOTE NOVEL PROTECTION AND GATE DRIVES FOR MOSFETs USED IN BRIDGE-LEG CONFIGURATIONS INTRODUCTION The bridge-leg is an important building block for many applications such as drives and switch-mode


    OCR Scan     		PDF 00V/DIV 1M4148 1N41448 1M4148 diode BC327 circuit example 12-0-12 1A transformer Transistor BC327 Q1 12-0-12 transformer design 12-0-12 transformer used 12v dc supply BC337 circuit example HCF4093