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    MOSFET APPLICATION NOTE FAIRCHILD Search Results

    MOSFET APPLICATION NOTE FAIRCHILD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET APPLICATION NOTE FAIRCHILD Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FQA9N90C equivalent

    Abstract: Rudy Severns "Safe Operating Area and Thermal Design" mospower applications handbook 2kw mosfet FQA11N90C Severns power mosfet 7515 siliconix mosfet discontinued AN-7514
    Text: March, 2004 Application Note 9034 Power MOSFET Avalanche Guideline Sungmo Young, Application Engineer Introduction The Power MOSFET is a very popular switching device used in switching power supplies and DC-DC converters. Their operation frequency is being continuously increased to reduce size


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    jfet cascode

    Abstract: mosfet equivalent AN-7502 mos cascode AN72 RFM15N15 high transconductance JFET Fairchild presentation
    Text: Power MOSFET Switching Waveforms: A New Insight Application Note [ /Title AN72 60 /Subject (Power MOSFET Switch ing Waveforms: A New Insight ) /Autho r () /Keywords (Intersil Corporation, semiconductor) /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines


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    AN885 - "Brushless DC Motor Fundamentals"

    Abstract: S 170 MOSFET TRANSISTOR AN898 600v 20a IGBT PIC stepper motor interfacing HEXFET Power MOSFET designer manual static characteristics of mosfet and igbt 2A mosfet igbt driver stage fuji igbt IGBT Modules Explanation of Technical Information DC MOTOR SPEED CONTROL USING IGBT
    Text: M AN898 Determining MOSFET Driver Needs for Motor Drive Applications Author: Jamie Dunn Microchip Technology Inc. INTRODUCTION Electronic motor control for various types of motors represents one of the main applications for MOSFET drivers today. This application note discusses some of


    Original     		AN898 DK-2750 D-85737 NL-5152 AN885 - "Brushless DC Motor Fundamentals" S 170 MOSFET TRANSISTOR AN898 600v 20a IGBT PIC stepper motor interfacing HEXFET Power MOSFET designer manual static characteristics of mosfet and igbt 2A mosfet igbt driver stage fuji igbt IGBT Modules Explanation of Technical Information DC MOTOR SPEED CONTROL USING IGBT PDF

    interleaved Boost PFC

    Abstract: RG44 FDA18N50 FDPF5N50FT FDPF12N50FT fdpf16n50t FDA16N50 FDB12N50 FQA16N50 FDD6N50
    Text: www.fairchildsemi.com AN-9066 UniFET — Optimized Switch for Discontinuous Current Mode Power Factor Correction Abstract This application note discusses merits of planar technology power MOSFET in discontinuous current mode power factor correction application. In most test conditions it is


    Original     		AN-9066 interleaved Boost PFC RG44 FDA18N50 FDPF5N50FT FDPF12N50FT fdpf16n50t FDA16N50 FDB12N50 FQA16N50 FDD6N50 PDF

    MOSFET NOTEBOOK

    Abstract: an667 APP667 FDS6680 IRF7801 MAX1636 Si4420 MOSFET Parameters
    Text: Maxim > App Notes > BATTERY MANAGEMENT Keywords: Power Efficiency in Next-Generation CPUs Tied to MOSFET Choice Jan 26, 2001 APPLICATION NOTE 667 Power Efficiency in Next-Generation CPUs Tied to MOSFET Choice The need for ultra-low on-resistance and low switching losses can make notebook MOSFET choice difficult.


    Original     		com/an667 AN667, APP667, Appnote667, MOSFET NOTEBOOK an667 APP667 FDS6680 IRF7801 MAX1636 Si4420 MOSFET Parameters PDF

    mosfet SPICE MODEL

    Abstract: self-heating subckt pspice high frequency mosfet A SPICE II subcircuit representation for power MOSFETs using empirical methods ronan difference between orcad pspice parallel mosfet MOSFET S1A FDP038AN08A0 PSPICE Orcad
    Text: Application Note 7533 October 2003 A Revised MOSFET Model With Dynamic Temperature Compensation Alain Laprade, Scott Pearson, Stan Benczkowski, Gary Dolny, Frank Wheatley Abstract An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macromodel implementation is the culmination of years of evolution in MOSFET


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    jfet cascode

    Abstract: mosfet equivalent cascode mosfet switching AN-7502 vertical JFET UHC MOS AN75 RFM15N15 7502 transistor AN752
    Text: Power MOSFET Switching Waveforms: A New Insight Application Note /Title AN75 2 Subect Power OSET witch ng aveorms: New nsi ht) Autho ) Keyords Interil orpoation, emionuctor) Cretor () DOCI FO dfark The examination of power MOSFET voltage and current waveforms during switching transitions reveals that the


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    ic ka3842b

    Abstract: KA5M0380R application note KA5M0365R application note power supply switching ka1m0565r pc817 Ringing Choke Converter smps transformer Design KA5L0380R. Application KA3842B KA1m0565r equivalent KA1L0380B
    Text: www.fairchildsemi.com Application Note AN4105 Design Considerations for Switched Mode Power Supplies Using A Fairchild Power Switch FPS in a Flyback Converter Introduction power MOSFET (SenseFET) and pulse width modulation (PWM) based control IC in one package. Moreover, they


    Original     		AN4105 ic ka3842b KA5M0380R application note KA5M0365R application note power supply switching ka1m0565r pc817 Ringing Choke Converter smps transformer Design KA5L0380R. Application KA3842B KA1m0565r equivalent KA1L0380B PDF

    NTC 10D-9

    Abstract: FAN7527 "EI CORE" 10D-9 fan7527 application note transistor 41 74t VARISTOR 7k 471 ntc rt1 varistor 10k 471 10D-9 varistor
    Text: www.fairchildsemi.com Application Note AN4107 Design of Power Factor Correction Using FAN7527 1. Introduction power factor is obtained. The FAN7527 is an active power factor correction PFC controller for boost PFC application which operates in the critical conduction mode. It turns on MOSFET when the


    Original     		AN4107 FAN7527 FAN7527 NTC 10D-9 "EI CORE" 10D-9 fan7527 application note transistor 41 74t VARISTOR 7k 471 ntc rt1 varistor 10k 471 10D-9 varistor PDF

    Dell Latitude csx

    Abstract: pspice model list transistor pspice self-heating model list transistor PCIM 177 ronan eLED ORCAD PSPICE BOOK FDP038AN06A0 FDP038AN08A0 AN-7510
    Text: Application Note 7534 July 2004 A New PSPICE Electro-Thermal Subcircuit For Power MOSFETs Alain Laprade, Scott Pearson, Stan Benczkowski, Gary Dolny, Frank Wheatley Abstract An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This


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    Tektronix 2712

    Abstract: 0805C104KAT2A
    Text: Application Note 1817 November 2012 13.56 MHz, Class-D Half Bridge, RF Generator with DRF1400 Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com INTRODUCTION The DRF1400 is a MOSFET Half Bridge HB Hybrid Device which has been optimized for efficiency and reduced


    Original     		DRF1400 DRF1400 LMR400 DRF1300 Tektronix 2712 0805C104KAT2A PDF

    SO8 package fairchild

    Abstract: No abstract text available
    Text: October 2001 Application Note 7526 Single Channel MicroFET 3x2 Power MOSFET Recommended Land Pattern and Thermal Performance Roman Gurevich , Scott Pearson , Ray Poremba Introduction Fairchild ’s new MicroFET™ 3x2 package with exposed drain pad provides a true surface-mount alternative that


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    SO8 package fairchild

    Abstract: 021L2
    Text: February 2002 Application Note 7526 Single Channel MicroFET 3x2 Power MOSFET Recommended Land Pattern and Thermal Performance Roman Gurevich , Scott Pearson , Ray Poremba Introduction Fairchild ’s new MicroFET™ 3x2 package with exposed drain pad provides a true surface-mount alternative that


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    ETH1-230L

    Abstract: Z9 DIODE CAT-5 Sdi IC 230L AN1574 RJ45 socket zener 1.5V LM5072 LM5073 5569381
    Text: National Semiconductor Application Note 1875 Grant Smith July 2, 2008 Introduction input controlled mosfet bridge which yields a typical worse case loss of 0.44%. For a more detailed description of the various features and customizations afforded, please refer to


    Original     		AN-1574. LM5073HE IEEE802 37VDC. AN-1875 ETH1-230L Z9 DIODE CAT-5 Sdi IC 230L AN1574 RJ45 socket zener 1.5V LM5072 LM5073 5569381 PDF

    AN-6003

    Abstract: MOSFET 3F FDB6676 FDD6644 adaptive deadtime driver
    Text: www.fairchildsemi.com Application Note 6003 Synchronous buck MOSFET loss calculations made easy High-Side Losses: Abstract The synchronous buck circuit is in widespread use to provide “point of use” high current, low voltage power for CPU’s, chipsets, peripherals etc.


    Original     		FDD6644 FDB6676 AN-6003 MOSFET 3F adaptive deadtime driver PDF

    smps power circuit using ka3842

    Abstract: bobbin EER-3542 220V ferrite core transformer sec ka7912 EER3542D ic ka3842b ka3842 application circuits 2 mosfet forward converter cookbook 220v 300w ac regulator circuit KA3842B Schematic
    Text: Application Note 9015 July, 2000 A180W, 100KHz Forward Converter Using QFET by I.S. Yang Introduction The inherent performance advantage of power MOSFETs makes their use very attractive in switched mode power supplies. The fundamental advantage of the power MOSFET is the


    Original     		A180W, 100KHz 100KHz, smps power circuit using ka3842 bobbin EER-3542 220V ferrite core transformer sec ka7912 EER3542D ic ka3842b ka3842 application circuits 2 mosfet forward converter cookbook 220v 300w ac regulator circuit KA3842B Schematic PDF

    varistor 472 SUS

    Abstract: rpf22n10 Fairchild UL file MOS transistor UHC MOS AN75 AN-7514 C150 IAS150 RFP22N10 uis test
    Text: Single Pulse Unclamped Inductive Switching: A Rating System Application Note Failure Mechanisms Early Power MOSFET devices, not designed to be rugged, failed when the parasitic bipolar transistor indigenous to the vertical DMOS process turned on. Figure 1 shows a cross


    Original     		AN-7514 varistor 472 SUS rpf22n10 Fairchild UL file MOS transistor UHC MOS AN75 AN-7514 C150 IAS150 RFP22N10 uis test PDF

    AN1032

    Abstract: application note 1032 AN-1032
    Text: Application Note 1032 July, 1999 Performance Restrictions Associated with 3.5 Watts SO-8 Power MOSFETs Alan Li, Sr. Applications Engineer In applications requiring high current and small footprint electronic switches, a Power MOSFET packaged in an SO-8 is usually the


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    POWER MOSFET APPLICATION NOTE

    Abstract: vertical JFET AN-7506 IRF130 jfet cascode AN75 Fairchild Power MOSFET resistance control for semiconductor subcircuit diode c23 jfet spice model
    Text: Spicing-Up Spice II Software For Power MOSFET Modeling Application Note /Title AN75 6 Subect Spicng-Up pice I Softare or ower OSET odelng) Autho ) Keyords Interil orpoation, emionuctor, Cretor () DOC NFO dfark The SPICE II simulation software package is familiar to most


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    2N7000 series protection

    Abstract: power mosfet IRC Isotek 1N4148V HUF76145S3S IRF3703 IRF6603 SUMMIT application note 28 STB80NF03L-04 STV160NF03L
    Text: SUMMIT Application Note 20 MICROELECTRONICS, Inc. SMT4004 QUAD TRACKING POWER SUPPLY MANAGER ADVANCED CURRENT SENSING SCHEMES AND POWER MOSFET SELECTION USING KELVIN SENSE CONNECTIONS FOR ACCURATE CURRENT MEASUREMENT Recommended sense resistor vendor: IRC — International Resistive Co., Inc. http://www.irctt.com/ . A list of


    Original     		SMT4004 2N7000 series protection power mosfet IRC Isotek 1N4148V HUF76145S3S IRF3703 IRF6603 SUMMIT application note 28 STB80NF03L-04 STV160NF03L PDF

    RCD snubber

    Abstract: RCD snubber mosfet design snubber circuit for mosfet AN-4147 AN4147 flyback switching snubber design flyback snubber flyback snubber design flyback rcd snubber circuit
    Text: www.fairchildsemi.com Application Note AN4147 Design Guidelines for RCD Snubber of Flyback Abstract When the MOSFET turns off, a high voltage spike occurs on the drain pin because of a resonance between the leakage inductor Llk of the main transformer and the output


    Original     		AN4147 AN30000010 RCD snubber RCD snubber mosfet design snubber circuit for mosfet AN-4147 AN4147 flyback switching snubber design flyback snubber flyback snubber design flyback rcd snubber circuit PDF

    AN757

    Abstract: SP600 g1l transistor mosfet discrete totem pole drive CIRCUIT AN75 AN-7507 P601 SP601 h5 t6 diode
    Text: SP600 and SP601 an HVIC MOSFET/IGT Driver for Half-Bridge Topologies Application Note April 1997 AN-7507 Author: Dean F. Henderson /Title AN75 7 Subect SP600 nd P601 n VIC OSET/I T river or alfridge opolgie ) Autho ) Keyords Interil orpoation, emionuctor,


    Original     		SP600 SP601 AN-7507 SP600 500VDC 230VAC AN757 g1l transistor mosfet discrete totem pole drive CIRCUIT AN75 AN-7507 P601 h5 t6 diode PDF

    AN9525

    Abstract: IRFI4212 rectifier honda bridge rectifier 2A CHOOSING MOSFETS mueta AN-003 Mosfet selection SI7852 STB16NF06 AN-9525
    Text: Application Note AN-002 Power MOSfet selection guidelines for class-D power amplifiers with ultra-low distortion. Selection of MOSfets using these guidelines can help the design of highly efficient full bridge class-D power amplifiers. This is achieved by carefully considering certain


    Original     		AN-002 AN-003) 4261GA AN-9525 AN-1070 AN-1071 AN9525 IRFI4212 rectifier honda bridge rectifier 2A CHOOSING MOSFETS mueta AN-003 Mosfet selection SI7852 STB16NF06 AN-9525 PDF

    varistor 472 SUS

    Abstract: RFP22N10 rpf22n10 AN-7514 AN9321 C150 IAS150 Fairchild UL file MOS transistor transient overvoltages in 220V 355a transistor
    Text: Single Pulse Unclamped Inductive Switching: A Rating System Application Note orpoion, minctor, ngle lse ncla ped duce witch g: A ating sm Failure Mechanisms Early Power MOSFET devices, not designed to be rugged, failed when the parasitic bipolar transistor indigenous to the


    Original     		AN-7514 AN9321) varistor 472 SUS RFP22N10 rpf22n10 AN-7514 AN9321 C150 IAS150 Fairchild UL file MOS transistor transient overvoltages in 220V 355a transistor PDF