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    MOSFET AMP Search Results

    MOSFET AMP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET AMP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: tSENSITRON SPM6M050-010D SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1161, REV. PRELIMINARY Three-Phase MOSFET BRIDGE, 100 VOLT, 50 AMP ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED MOSFET Characteristics CHARACTERISTIC SYMBOL


    Original     		PDF SPM6M050-010D

    SPM6M050-010D

    Abstract: No abstract text available
    Text: SPM6M050-010D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1161, REV. PRELIMINARY A Three-Phase MOSFET BRIDGE, 100 VOLT, 50 AMP ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED MOSFET Characteristics CHARACTERISTIC SYMBOL


    Original     		PDF SPM6M050-010D SPM6M050-010D

    fet_11111.0

    Abstract: No abstract text available
    Text: Category: MOSFET CIRCUIT IDEAS FOR DESIGNERS Amplify and Shift EPAD Schematic no. fet_11111.0 MOSFET Output with an Operational Amplifier Description This circuit shows an EPAD MOSFET and resistor network with an output that can scaled to any desired voltage VO. By careful selection of the EPAD MOSFET and resistor values as well as resistor


    Original     		PDF

    ADVANCED LINEAR DEVICES

    Abstract: design ideas ALD1108E ALD110908 ALD1712 ALD1721 ALD1722 ALD1726 ideas circuit ideas
    Text: Category: MOSFET CIRCUIT IDEAS FOR DESIGNERS Schematic no. fet_11111.0 Amplify and Shift EPAD  MOSFET Output with an Operational Amplifier Description This circuit shows an EPAD MOSFET and resistor network with an output that can scaled to any desired voltage VO. By careful selection of the EPAD MOSFET and resistor values as well as resistor


    Original     		PDF ALD1108E, ALD110908, ALD1712, ALD1721, ALD1722, ALD1726 ADVANCED LINEAR DEVICES design ideas ALD1108E ALD110908 ALD1712 ALD1721 ALD1722 ALD1726 ideas circuit ideas

    2P50EG

    Abstract: 2P50 2p50e AN569 MTP2P50E MTP2P50EG mosfet transistor 400 volts.100 amperes
    Text: MTP2P50E Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed


    Original     		PDF MTP2P50E O-220 MTP2P50E/D 2P50EG 2P50 2p50e AN569 MTP2P50E MTP2P50EG mosfet transistor 400 volts.100 amperes

    Untitled

    Abstract: No abstract text available
    Text: MTP2P50E Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed


    Original     		PDF MTP2P50E MTP2P50E/D

    2 sd 586

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6M070-020D TECHNICAL DATA Datasheet 4171, Rev. - Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 200 VOLT, 70 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE


    Original     		PDF SPM6M070-020D /-20V 125oC 2 sd 586

    optical mosfet

    Abstract: SPM6M070-020D
    Text: SENSITRON SEMICONDUCTOR SPM6M070-020D TECHNICAL DATA Datasheet 4171, Rev. - Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 200 VOLT, 70 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE


    Original     		PDF SPM6M070-020D /-20V optical mosfet SPM6M070-020D

    mosfet transistor 400 volts.100 amperes

    Abstract: No abstract text available
    Text: MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed


    Original     		PDF MTB2P50E MTB2P50E/D mosfet transistor 400 volts.100 amperes

    Amp. mosfet 1000 watt

    Abstract: AN569 MTB2P50E MTB2P50ET4 mosfet transistor 400 volts.100 amperes
    Text: MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed


    Original     		PDF MTB2P50E MTB2P50E/D Amp. mosfet 1000 watt AN569 MTB2P50E MTB2P50ET4 mosfet transistor 400 volts.100 amperes

    t2p50e

    Abstract: p50eg AN569 MTB2P50E MTB2P50ET4 MTB2P50ET4G mosfet transistor 400 volts.100 amperes ww h 845 1 r
    Text: MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed


    Original     		PDF MTB2P50E MTB2P50E/D t2p50e p50eg AN569 MTB2P50E MTB2P50ET4 MTB2P50ET4G mosfet transistor 400 volts.100 amperes ww h 845 1 r

    AN569

    Abstract: MTP1N50E mtp1n
    Text: MTP1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, the MOSFET is designed to


    Original     		PDF MTP1N50E r14525 MTP1N50E/D AN569 MTP1N50E mtp1n

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. D Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE


    Original     		PDF SPM6M080-010D 125oC

    adc 0808 internal circuit diagram

    Abstract: TB-547 AN569 MTW6N100E MTW6N100
    Text: MTW6N100E Preferred Device Power MOSFET 6 Amps, 1000 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is


    Original     		PDF MTW6N100E r14525 MTW6N100E/D adc 0808 internal circuit diagram TB-547 AN569 MTW6N100E MTW6N100

    AN569

    Abstract: MTW10N100E
    Text: MTW10N100E Preferred Device Power MOSFET 10 Amps, 1000 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is


    Original     		PDF MTW10N100E O-247 r14525 MTW10N100E/D AN569 MTW10N100E

    12N70

    Abstract: UTC12N70
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12 Amps, 700 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N70 12N70 12N70L QW-R502-220 UTC12N70

    ut40n03

    Abstract: UT-40 a1693
    Text: UNISONIC TECHNOLOGIES CO., LTD UT40N03 Power MOSFET 40 Amps, 30 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UT40N03 power MOSFET provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness


    Original     		PDF UT40N03 UT40N03 UT40N03L-TN3-R UT40N03G-TN3-R UT40N03L-TM3-T UT40N03G-TM3-T O-252 O-251 QW-R502-160 UT-40 a1693

    MTY25N60E

    Abstract: AN569 TL 188 TRANSISTOR PIN DIAGRAM
    Text: MTY25N60E Preferred Device Power MOSFET 25 Amps, 600 Volts N−Channel TO−264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is


    Original     		PDF MTY25N60E O-264 r14525 MTY25N60E/D MTY25N60E AN569 TL 188 TRANSISTOR PIN DIAGRAM

    12n60a

    Abstract: 12N60 12N60L 12n60 dc 12n60b 12A 650V MOSFET 12N-60a power mosfet 200A 12N60L-x-TF3-T 12N60G
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 12N60 12N60L 12N60G QW-R502-170 12n60a 12N60L 12n60 dc 12n60b 12A 650V MOSFET 12N-60a power mosfet 200A 12N60L-x-TF3-T 12N60G

    AN569

    Abstract: MTW7N80E
    Text: MTW7N80E Preferred Device Power MOSFET 7 Amps, 800 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is


    Original     		PDF MTW7N80E r14525 MTW7N80E/D AN569 MTW7N80E

    adc 0808 internal circuit diagram

    Abstract: No abstract text available
    Text: MTW6N100E Preferred Device Power MOSFET 6 Amps, 1000 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is


    Original     		PDF MTW6N100E O-247 MTW6N100E/D adc 0808 internal circuit diagram

    t2p50e

    Abstract: No abstract text available
    Text: MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed


    Original     		PDF MTB2P50E MTB2P50E/D t2p50e

    AN569

    Abstract: MTW20N50E
    Text: MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is


    Original     		PDF MTW20N50E r14525 MTW20N50E/D AN569 MTW20N50E

    4096 IC 14 pins

    Abstract: No abstract text available
    Text: SPM6M060-010D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4096, Rev A Three-Phase MOSFET Bridge, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 60 AMP, THREE PHASE MOSFET BRIDGE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED


    Original     		PDF SPM6M060-010D /-20V 125oC 4096 IC 14 pins