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    MOSFET A11 Search Results

    MOSFET A11 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET A11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J239

    Abstract: motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor
    Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET


    Original     		PDF MRF9002R2/D MRF9002R2 J239 motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor

    motorola rf Power Transistor

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET


    Original     		PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D motorola rf Power Transistor

    2a11612

    Abstract: 2S200
    Text: CPH5870 Ordering number : ENA1161 SANYO Semiconductors DATA SHEET CPH5870 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package


    Original     		PDF CPH5870 ENA1161 A1161-5/5 2a11612 2S200

    sc1142

    Abstract: sanyo a75 amplifier IR7811 a106 diode SC1142CSW surface mount A106 diode B85 diode A107 capacitor B91 02 diode A116 diode
    Text: HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER December 16, 1999 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1405B is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through from VIN to GND in the main switching and synchronous MOSFET’s. Each driver is capable of driving


    Original     		PDF SC1405B SC1405B 3000pF IR7811 FDB7030 TSSOP-14 ECN99-773 sc1142 sanyo a75 amplifier a106 diode SC1142CSW surface mount A106 diode B85 diode A107 capacitor B91 02 diode A116 diode

    J133 mosfet transistor

    Abstract: mosfet j133 J104 MOSFET j122 mosfet mosfet j122 9601 mosfet J122 transistor transistor z5 TRANSISTOR J15
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make


    Original     		PDF MRF9002R2 MRF9002R2 J133 mosfet transistor mosfet j133 J104 MOSFET j122 mosfet mosfet j122 9601 mosfet J122 transistor transistor z5 TRANSISTOR J15

    sc1142

    Abstract: a106 diode B118 Mos-fet a106 capacitor surface mount A106 diode B85 diode sanyo a75 amplifier MOSFET A13 IR7811 PIN112
    Text: HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER March 14, 2000 SC1405B TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1405B is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through from VIN to GND in the main switching and synchronous MOSFET’s. Each driver is capable of driving


    Original     		PDF SC1405B SC1405B 3000pF IR7811 FDB7030 TSSOP-14 ECN00-924 sc1142 a106 diode B118 Mos-fet a106 capacitor surface mount A106 diode B85 diode sanyo a75 amplifier MOSFET A13 IR7811 PIN112

    PHILIPS MOSFET MARKING

    Abstract: passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF1107 Silicon N-channel single gate MOSFET Preliminary specification File under Discrete Semiconductors, SC07 1998 Apr 07 Philips Semiconductors Preliminary specification Silicon N-channel single gate MOSFET


    Original     		PDF M3D088 BF1107 SCA59 115102/00/01/pp8 PHILIPS MOSFET MARKING passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107

    A1170

    Abstract: ta 7045 EMH2402 2A11702 A117-04
    Text: EMH2408 Ordering number : ENA1170 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EMH2408 General-Purpose Switching Device Applications Features • • • The EMH2402 incorporates an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,


    Original     		PDF EMH2408 ENA1170 EMH2402 PW10s, A1170-4/4 A1170 ta 7045 2A11702 A117-04

    Untitled

    Abstract: No abstract text available
    Text: EMH2408 Ordering number : ENA1170A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EMH2408 General-Purpose Switching Device Applications Features • • • The EMH2408 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,


    Original     		PDF EMH2408 ENA1170A EMH2408 A1170-7/7

    A1170

    Abstract: A117-04 2A11702 A11701
    Text: EMH2408 Ordering number : ENA1170A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EMH2408 General-Purpose Switching Device Applications Features • • • The EMH2408 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,


    Original     		PDF ENA1170A EMH2408 EMH2408 PW10s, 900mm2 A1170-7/7 A1170 A117-04 2A11702 A11701

    mosfet K 2865

    Abstract: BF1107 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF1107 N-channel single gate MOSFET Product specification Supersedes data of 1998 Apr 07 File under Discrete Semiconductors, SC07 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOSFET


    Original     		PDF M3D088 BF1107 BF1107 SCA60 115102/00/02/pp8 mosfet K 2865 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING

    2A11702

    Abstract: No abstract text available
    Text: EMH2408 Ordering number : ENA1170 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EMH2408 General-Purpose Switching Device Applications Features • • • The EMH2402 incorporates an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,


    Original     		PDF ENA1170 EMH2408 EMH2402 PW10s, 900mm20 A1170-4/4 2A11702

    sc1142

    Abstract: IR7811 SC1142CSW surface mount A106 diode SC1142-1205 diode b81 a113 FET SANYO 1000uF 16V CA B20 bridge rectifier B40 B2 RECTIFIER
    Text: HIGH SPEED SYNCHRONOUS POWER MOSFET DRIVER PRELIMINARY - December 7, 1999 SC1205 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SC1205 is a cost effective Dual MOSFET Driver designed for switching High and Low side Power


    Original     		PDF SC1205 SC1205 3000pF MS-012AA ECN99-742 sc1142 IR7811 SC1142CSW surface mount A106 diode SC1142-1205 diode b81 a113 FET SANYO 1000uF 16V CA B20 bridge rectifier B40 B2 RECTIFIER

    APL3542A

    Abstract: No abstract text available
    Text: APL3542A High-Side Power Distribution Controller General Description Features • APL3542A is a high-side power distribution controller for an external N-channel MOSFET, allow for +12V, +19V or High-Side Driver for an External N-Channel MOSFET • • •


    Original     		PDF APL3542A APL3542A JESD-22, MIL-STD-883-3015 100mA

    J133 mosfet transistor

    Abstract: transistor j239 motorola MOSFET 935 ON SEMICONDUCTOR J122 985 transistor A113 MRF9002R2 RO4350 mosfet j133 MOTOROLA TRANSISTOR 935
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL


    Original     		PDF MRF9002R2/D MRF9002R2 J133 mosfet transistor transistor j239 motorola MOSFET 935 ON SEMICONDUCTOR J122 985 transistor A113 MRF9002R2 RO4350 mosfet j133 MOTOROLA TRANSISTOR 935

    HT0440LG

    Abstract: HT0440 ht0440lg-g 27BSC
    Text: HT0440 Dual, High Voltage, Isolated MOSFET Driver Features General Description ► ► ► ► ► The Supertex HT0440 is a dual, high voltage, isolated MOSFET driver utilizing Supertex’s proprietary HVCMOS technology. It is designed to drive discrete MOSFETs


    Original     		PDF HT0440 HT0440 600pF 27BSC DSFP-HT0440 A111006 HT0440LG ht0440lg-g 27BSC

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1170A EMH2408 N-Channel Power MOSFET http://onsemi.com 20V, 4A, 45mΩ, Dual EMH8 Features • • • The EMH2408 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting


    Original     		PDF ENA1170A EMH2408 EMH2408 PW10s, 900mm2 A1170-7/7

    MRF6P21190H

    Abstract: AN1955 JESD22 MRF6P21190HR6 A114 A115
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF6P21190HR6/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6P21190HR6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6P21190HR6/D MRF6P21190HR6 MRF6P21190H/D MRF6P21190H AN1955 JESD22 MRF6P21190HR6 A114 A115

    APL3540

    Abstract: Power Distribution Controller
    Text: APL3540 High-Side Power Distribution Controller General Description Features • APL3540 is a high-side power distribution controller for an external N-channel MOSFET, allow for +12V and +19V High-Side Driver for an External N-Channel MOSFET • • • •


    Original     		PDF APL3540 APL3540 JESD-22, MIL-STD-883-3015 100mA Power Distribution Controller

    MRF9030N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9030NBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts


    Original     		PDF MRF9030N MRF9030NBR1 MRF9030N

    MD1821

    Abstract: mark vh MO-220 TC6320 Piezoelectric ultrasound Transducer
    Text: Supertex inc. MD1821 High Speed, Four Channel MOSFET Driver with Inverting Outputs Features ► ► ► ► ► ► ► ► ► ► ► ► Inverting MOSFET driver 6.0ns rise and fall time 2.0A peak output source/sink current 1.8 to 5.0V input CMOS compatible


    Original     		PDF MD1821 DSFP-MD1821 A110110 MD1821 mark vh MO-220 TC6320 Piezoelectric ultrasound Transducer

    MD1822

    Abstract: MD1822K6-G MO-220 TC6320 PAY MARKING MOSFET A11011
    Text: Supertex inc. MD1822 High Speed Four Channel MOSFET Driver with Two Inverting and Two Non-Inverting Outputs Features ► ► ► ► ► ► ► ► ► ► ► ► Mixed inversion MOSFET driver 6.0ns rise and fall time 2.0A peak output source/sink current


    Original     		PDF MD1822 DSFP-MD1822 A110110 MD1822 MD1822K6-G MO-220 TC6320 PAY MARKING MOSFET A11011

    APL3518A

    Abstract: APL3518B APL3518C APL3519A APL3519B APL3519C
    Text: APL3518/9 USB Power-Distribution Switches General Description Features • • • • • • • • The APL3518/9 series of power switches are designed for USB applications. The 62mΩ N-channel MOSFET 62mΩ High Side MOSFET Wide Supply Voltage Range: 2.7V to 5.5V


    Original     		PDF APL3518/9 APL3518/9 JESD-22, MIL-STD-883-3015 100mA APL3518A APL3518B APL3518C APL3519A APL3519B APL3519C

    APL3520A

    Abstract: APL3520B APL3520C APL3520D Power Switch
    Text: APL3520A/B/C/D USB Dual Power-Distribution Switches Features General Description • 70mΩ High Side MOSFET • Continuous Current The APL3520 series of power switches are designed for USB applications. The 70mΩ N-channel MOSFET power switch satisfies the voltage drop requirements of USB


    Original     		PDF APL3520A/B/C/D APL3520 -APL3520A/B: -APL3520C/D: cuSD-22, JESD-22, MIL-STD-883-3015 100mA APL3520A APL3520B APL3520C APL3520D Power Switch