FDW9926NZ
Abstract: C3245
Text: FDW9926NZ Common Drain N-Channel 2.5V specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power
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FDW9926NZ
FDW9926NZ
C3245
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9926n
Abstract: FDW9926NZ
Text: FDW9926NZ Common Drain N-Channel 2.5V specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power
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FDW9926NZ
9926n
FDW9926NZ
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9926N
Abstract: 9926 mosfet VGS-12V AF9926N
Text: AF9926N N-Channel Enhancement Mode Power MOSFET Features General Description - Capable of 2.5V Gate Drive - Low On-resistance - Low Drive Current - Surface Mount Package The advanced power MOSFET provides the designer with the best combination of fast switching,
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AF9926N
9926N
015x45
9926 mosfet
VGS-12V
AF9926N
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9926N
Abstract: 9926 SO-8 9926 mosfet AF9926N mosfet 9926 MOSFET SO-8 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Text: AF9926N N-Channel Enhancement Mode Power MOSFET Features General Description - Capable of 2.5V Gate Drive - Low On-resistance - Low Drive Current - Surface Mount Package The advanced power MOSFET provides the designer with the best combination of fast switching,
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AF9926N
9926N
9926 SO-8
9926 mosfet
AF9926N
mosfet 9926
MOSFET SO-8
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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9926a
Abstract: FDW9926A Dual N-Channel 2.5V
Text: FDW9926A Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW9926A
9926a
FDW9926A
Dual N-Channel 2.5V
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Untitled
Abstract: No abstract text available
Text: FDW9926A Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW9926A
FDW9926A
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9926A
Abstract: FDW9926A
Text: FDW9926A Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW9926A
9926A
FDW9926A
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9926A
Abstract: FDW9926A
Text: FDW9926A Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW9926A
FDW9926A
9926A
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9926A
Abstract: FDW9926A
Text: FDW9926A Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW9926A
9926A
FDW9926A
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Untitled
Abstract: No abstract text available
Text: MOSFET SMD Type Dual N-Channel MOSFET SI9926DY • Features TSSOP-8 ● RDS on ≤ 0.032 Ω @ VGS = 4.5 V Unit: mm ● RDS(on) ≤ 0.045 Ω @ VGS = 2.5 V. D1 D2 S1 S2 S1 S2 G1 G2 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2
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SI9926DY
9926D
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9926b
Abstract: No abstract text available
Text: MOSFET SMD Type Dual N-Channel MOSFET SI9926BDY • Features SOP-8 ● RDS on = 0.027 Ω @ VGS = 4.5 V ● RDS(on) = 0.036 Ω @ VGS = 2.5 V. D1 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 D2 G2 G1 S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol
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SI9926BDY
9926B
9926b
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9926 mosfet
Abstract: F 9926 MOSFET FHK9926 sot 26 Dual N-Channel MOSFET mosfet 9926
Text: 雙 N 增強型場效應管 Dual N-Channel Enhancement-Mode MOSFET Dual N-Channel Enhancement-Mode MOSFET 雙 N 增強型場效應管 FHK9926 DESCRIPTION & FEATURES 概述及特點 SOT-26 Super High dense cell design for extremely low RDS ON . 超高密集單元設計可獲得極低導通電阻
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FHK9926
OT-26
9926 mosfet
F 9926 MOSFET
FHK9926
sot 26 Dual N-Channel MOSFET
mosfet 9926
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0805 footprint
Abstract: AN-1356 GRM216R61E105KA12B LM2743 TSSOP14 9926b DIODE footprint
Text: National Semiconductor Application Note 1356 Ricardo Capetillo October 2005 Introduction due to the lower forward drop than the low side MOSFET body diode conducting during the anti-shoot through period. Select a Schottky diode that maintains a forward drop
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LM2743
CSP-9-111S2)
CSP-9-111S2.
AN-1356
0805 footprint
AN-1356
GRM216R61E105KA12B
TSSOP14
9926b
DIODE footprint
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJ9926 N-Channel Enhancement-Mode MOSFET SOP8 FEATURE z z Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance z High Power and Current handing capability
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CJ9926
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9926 mosfet
Abstract: OZ 9926 9926 BATTERY Si9926DY 9926 SO-8 F 9926 MOSFET
Text: Si9926DY Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage
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Si9926DY
9926 mosfet
OZ 9926
9926 BATTERY
9926 SO-8
F 9926 MOSFET
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ9926 N-Channel Enhancement-Mode MOSFET SOT-23 FEATURE z Advanced trench process technology z High Density Cell Design for Ultra Low On-Resistance z High Power and Current handing capability
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OT-23
CJ9926
OT-23
150otherwise
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP9926GEO-HF-3 Dual N-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs Supports 2.5V Gate Drive D1 Low On-resistance G1 D2 BV DSS 20V R DS ON G2 28mΩ ID RoHS-compliant, halogen-free S1 4.6A S2
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AP9926GEO-HF-3
AP9926
9926GEO
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9926gm
Abstract: AP9926GM
Text: AP9926GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 BVDSS 20V RDS ON 30mΩ D2 ▼ Capable of 2.5V gate drive D1 D1 ▼ Surface mount package ID G2 SO-8 S1 G1 6A S2 Description D2
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AP9926GM
9926GM
9926gm
AP9926GM
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9926A
Abstract: APM9926A
Text: APM9926A Dual N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/6A , RDS ON =28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely S1 1 8 D D 1 8 D G1 2 7 D S1 2 7 S2 S2 3 6 D S1 3 6 S2 G2 4
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APM9926A
9926A
APM9926A
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9926a
Abstract: APM9926A 8A330 G1 5C 22 330
Text: APM9926A Dual N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/6A , RDS ON =28mΩ(typ.) @ VGS=4.5V RDS(ON)=34mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely S1 1 8 D D1 1 8 G1 2 7 D S1 2 7 S2 S2 3 6 D S1 3 6 S2 G2 4
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APM9926A
9926a
APM9926A
8A330
G1 5C 22 330
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2n3904 application
Abstract: overcharge protection circuit nimh overcharge protection circuit nimh 10 cell 9926 mosfet 9 VOLT HIGH POWER BATTERY 9926 transistor 9926 BATTERY AIC1801 2N3904 bth 100
Text: AN98-BM01EN May 1998 Battery Charging Protection Design Using AIC1801 Jacob Wu Abstract In recent years, the Li-ion battery is getting more and more popular in applications of rechargeable power systems. For cellular phones, one-cell Li-ion battery power system is most widely used. Although
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AN98-BM01EN
AIC1801
AIC1801
2n3904 application
overcharge protection circuit nimh
overcharge protection circuit nimh 10 cell
9926 mosfet
9 VOLT HIGH POWER BATTERY
9926 transistor
9926 BATTERY
2N3904
bth 100
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9926b
Abstract: 6TPD470 LM2746 AN-1385 GRM216R61E105KA12B TSSOP14
Text: National Semiconductor Application Note 1385 Thatcher Klumpp May 2005 Introduction Additional Footprints This application note describes the LM2746 printed circuit board PCB design and provides an example typical application circuit. The demo board allows component design
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LM2746
CSP-9-111S2)
CSP-9-111S2.
AN-1385
9926b
6TPD470
AN-1385
GRM216R61E105KA12B
TSSOP14
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9926b
Abstract: AN-1379 GRM216R61E105KA12B TSSOP14
Text: National Semiconductor Application Note 1379 Maurice Eaglin April 2006 Introduction Additional Footprints This application notes describes the LM2745/8 printed circuit board PCB design and provides an example typical application circuit. The demo board allows component design
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LM2745/8
CSP-9-111S2)
CSP-9-111S2.
AN-1379
9926b
AN-1379
GRM216R61E105KA12B
TSSOP14
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9926b
Abstract: AN-1449 GRM216R61E105KA12B LM2747 TSSOP14 Capacitor MLCC 1210 10uF 25V AN1449 C12and 9926BDY
Text: National Semiconductor Application Note 1449 Maurice Eaglin April 2006 Introduction Additional Footprints This application notes describes the LM2747 printed circuit board PCB design and provides an example typical application circuit. The demo board allows component design
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LM2747
CSP-9-111S2)
CSP-9-111S2.
AN-1449
9926b
AN-1449
GRM216R61E105KA12B
TSSOP14
Capacitor MLCC 1210 10uF 25V
AN1449
C12and
9926BDY
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