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    MOSFET 9452 Search Results

    MOSFET 9452 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 9452 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf1010 applications

    Abstract: No abstract text available
    Text: PD-94526 IRF1503 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications ● ● 14V Automotive Electrical Systems 14V Electronic Power Steering D VDSS = 30V Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature


    Original     		PDF PD-94526 IRF1503 O-220AB. O-220AB IRF1010 O-220AB irf1010 applications

    Untitled

    Abstract: No abstract text available
    Text: PD - 94520 AUTOMOTIVE MOSFET IRF1302S IRF1302L Benefits ● ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


    Original     		PDF IRF1302S IRF1302L AN-994.

    PD-94526A

    Abstract: IRF1503
    Text: PD-94526A IRF1503 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications ● ● 14V Automotive Electrical Systems 14V Electronic Power Steering D VDSS = 30V Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature


    Original     		PDF PD-94526A IRF1503 O-220AB IRF1010 O-220AB PD-94526A IRF1503

    IRF1302L

    Abstract: IRF1302S
    Text: PD - 94520 AUTOMOTIVE MOSFET IRF1302S IRF1302L Benefits ● ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


    Original     		PDF IRF1302S IRF1302L AN-994. IRF1302L IRF1302S

    IRF1302L

    Abstract: IRF1302S
    Text: PD - 94520 AUTOMOTIVE MOSFET IRF1302S IRF1302L Benefits ● ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


    Original     		PDF IRF1302S IRF1302L AN-994. IRF1302L IRF1302S

    Untitled

    Abstract: No abstract text available
    Text: PD-94526A IRF1503 AUTOMOTIVE MOSFET Typical Applications ● ● HEXFET Power MOSFET 14V Automotive Electrical Systems 14V Electronic Power Steering D VDSS = 30V Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature


    Original     		PDF PD-94526A IRF1503 IRF1010 O-220AB

    IRF1503

    Abstract: irf150
    Text: PD-94526A IRF1503 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications ● ● 14V Automotive Electrical Systems 14V Electronic Power Steering D VDSS = 30V Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature


    Original     		PDF PD-94526A IRF1503 IRF1010 O-220AB IRF1503 irf150

    IRFI840G

    Abstract: IRFIB5N50L
    Text: PD - 94522A IRFIB5N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. ID 0.67Ω 500V Features and Benefits


    Original     		PDF 4522A IRFIB5N50L O-220 IRFI840G O-220AB IRFI840G IRFIB5N50L

    U38-15

    Abstract: IRLR3815 IRLU3815 MOSFET IRF 635
    Text: PD - 94527 IRLR3815 IRLU3815 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 14mΩ


    Original     		PDF IRLR3815 IRLU3815 AN-994. U38-15 IRLR3815 IRLU3815 MOSFET IRF 635

    IRFIB5N50L

    Abstract: No abstract text available
    Text: PD - 94522B IRFIB5N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. ID 0.67Ω 500V Features and Benefits


    Original     		PDF 94522B IRFIB5N50L O-220 12-Mar-07 IRFIB5N50L

    Untitled

    Abstract: No abstract text available
    Text: PD - 94522B IRFIB5N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. ID 0.67Ω 500V Features and Benefits


    Original     		PDF 94522B IRFIB5N50L O-220 08-Mar-07

    IRFIB5N50L

    Abstract: No abstract text available
    Text: PD - 94522B IRFIB5N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. ID 0.67Ω 500V Features and Benefits


    Original     		PDF 94522B IRFIB5N50L O-220 I840G O-220AB IRFIB5N50L

    B1370

    Abstract: b1370 e mosfet marking l R B1370
    Text: PD - 94522 SMPS MOSFET IRFIB5N50L HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive VDSS RDS(on) typ. 500V 0.67Ω Benefits Low Gate Charge Qg results in Simple Drive


    Original     		PDF IRFIB5N50L IRFI840G O-220 B1370 b1370 e mosfet marking l R B1370

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    irfr3518

    Abstract: AN1001 EIA-541 IRFU3518
    Text: PD - 94523 IRFR3518 IRFU3518 Applications l High frequency DC-DC converters HEXFET Power MOSFET VDSS RDS on max ID 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		PDF IRFR3518 IRFU3518 AN1001) AN-994. irfr3518 AN1001 EIA-541 IRFU3518

    Untitled

    Abstract: No abstract text available
    Text: PD - 94523 IRFR3518 IRFU3518 Applications l High frequency DC-DC converters HEXFET Power MOSFET VDSS RDS on max ID 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		PDF IRFR3518 IRFU3518 AN1001) AN-994.

    Untitled

    Abstract: No abstract text available
    Text: PD - 94524 Automotive Die IRLC2908 HEXFET Power MOSFET Die in Wafer Form l l l 100% Tested at Probe ‚ Available in Tape and Reel, Chip Pack, Sawn on Film and Gel Pack ƒ Ultra Low On-Resistance Key Electrical Characteristics D-Pak package Parameter V(BR)DSS


    Original     		PDF IRLC2908

    Untitled

    Abstract: No abstract text available
    Text: AP9452GG-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower gate charge D ▼ Capable of 2.5V gate drive ▼ Single Drive Requirement BVDSS 20V RDS ON 50mΩ ID G ▼ RoHS Compliant 4A S Description D


    Original     		PDF AP9452GG-HF OT-89

    9452 sot-89

    Abstract: mosfet 9452 gs 9452 9452 marking code CODE 9452 SOT-89 9452 mosfet AP9452GG-HF
    Text: AP9452GG-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower gate charge D ▼ Capable of 2.5V gate drive ▼ Single Drive Requirement BVDSS 20V RDS ON 50mΩ ID G ▼ RoHS Compliant 4A S Description D


    Original     		PDF AP9452GG-HF OT-89 9452 sot-89 mosfet 9452 gs 9452 9452 marking code CODE 9452 SOT-89 9452 mosfet AP9452GG-HF

    Untitled

    Abstract: No abstract text available
    Text: AP9452GG RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower gate charge BVDSS D 20V RDS ON Capable of 2.5V gate drive Single Drive Requirement 50m ID G 4A S Description D Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP9452GG OT-89

    Untitled

    Abstract: No abstract text available
    Text: AP9452GG-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower gate charge BVDSS D 20V RDS ON Capable of 2.5V gate drive Single Drive Requirement 50m ID G RoHS Compliant 4A S Description D Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP9452GG-HF OT-89

    mosfet 9452

    Abstract: 9452 sot-89 gs 9452 sot-89 MARKING CODE 4A sot-89 9452 9452 mosfet AP9452GG 4A SOT89
    Text: AP9452GG RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower gate charge D ▼ Capable of 2.5V gate drive ▼ Single Drive Requirement BVDSS 20V RDS ON 50mΩ ID G 4A S Description D Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP9452GG OT-89 mosfet 9452 9452 sot-89 gs 9452 sot-89 MARKING CODE 4A sot-89 9452 9452 mosfet AP9452GG 4A SOT89

    22N55

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFH 22 N55 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr = 550 V = 22 A = 0.27 W £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 550 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: □ 1XYS IXFH 22N55 ’reliminary Data HiPerFET“Power MOSFET N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low t„ Symbol Test Conditions V*D SS ^ = 25°C to 150°C 550 V VDGR ^ = 25°C to 150°C; RGS = 1 M£2 550 V V GS Continuous ±20 V vw GSM


    OCR Scan     		PDF 22N55