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    MOSFET 9435 Search Results

    MOSFET 9435 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 9435 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AN1001

    Abstract: 94358 IRFS38N20D IRF1010 IRF530S IRFB38N20D IRFSL38N20D 94358a
    Text: PD - 94358A IRFB38N20D IRFS38N20D IRFSL38N20D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See


    Original     		4358A IRFB38N20D IRFS38N20D IRFSL38N20D AN1001) O-220AB O-262 AN1001 94358 IRFS38N20D IRF1010 IRF530S IRFB38N20D IRFSL38N20D 94358a PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94358A IRFB38N20D IRFS38N20D IRFSL38N20D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See


    Original     		4358A IRFB38N20D IRFS38N20D IRFSL38N20D AN1001) O-220AB O-262 PDF

    AN1001

    Abstract: IRF1010 IRF530S IRFB38N20D IRFS38N20D IRFSL38N20D
    Text: PD - 94358 IRFB38N20D IRFS38N20D IRFSL38N20D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See


    Original     		IRFB38N20D IRFS38N20D IRFSL38N20D AN1001) O-220AB O-262 O-220AB AN1001 IRF1010 IRF530S IRFB38N20D IRFS38N20D IRFSL38N20D PDF

    IRFB52N15D

    Abstract: AN1001 IRF1010 IRF530S IRFS52N15D IRFSL52N15D
    Text: PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See


    Original     		4357A IRFB52N15D IRFS52N15D IRFSL52N15D AN1001) O-220AB O-262 IRFB52N15D AN1001 IRF1010 IRF530S IRFS52N15D IRFSL52N15D PDF

    AN1001

    Abstract: IRF1010 IRF530S IRFB52N15D IRFS52N15D IRFSL52N15D ir 119 e
    Text: PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See


    Original     		4357A IRFB52N15D IRFS52N15D IRFSL52N15D AN1001) O-220AB O-262 AN1001 IRF1010 IRF530S IRFB52N15D IRFS52N15D IRFSL52N15D ir 119 e PDF

    94358a

    Abstract: 94358 IRFS38N20D AN1001 IRF1010 IRF530S IRFB38N20D IRFSL38N20D
    Text: PD - 94358A IRFB38N20D IRFS38N20D IRFSL38N20D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See


    Original     		4358A IRFB38N20D IRFS38N20D IRFSL38N20D AN1001) O-220AB O-262 94358a 94358 IRFS38N20D AN1001 IRF1010 IRF530S IRFB38N20D IRFSL38N20D PDF

    AN1001

    Abstract: IRF1010 IRF530S IRFB52N15D IRFS52N15D IRFSL52N15D
    Text: PD - 94357 IRFB52N15D IRFS52N15D IRFSL52N15D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See


    Original     		IRFB52N15D IRFS52N15D IRFSL52N15D AN1001) O-220AB O-262 O-220AB AN1001 IRF1010 IRF530S IRFB52N15D IRFS52N15D IRFSL52N15D PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94359 IRF6217 SMPS MOSFET HEXFET Power MOSFET Applications Reset Switch for Active Clamp Reset DC to DC converters VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See


    Original     		IRF6217 AN1001) -150V IA-48 PDF

    IRF6217

    Abstract: AN1001
    Text: PD - 94359 IRF6217 SMPS MOSFET HEXFET Power MOSFET Applications Reset Switch for Active Clamp Reset DC to DC converters VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See


    Original     		IRF6217 AN1001) -150V IA-48 IRF6217 AN1001 PDF

    IRF igbt gate driver

    Abstract: MOSFET IRF 630 SMD-247 st smd diode marking code ET MOSFET IRF 630 Datasheet MOSFET IRF 570 MOSFET IRF 603
    Text: PD - 94351 IRFP17N50LS SMPS MOSFET HEXFET Power MOSFET Applications l l l l Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching ZVS and High Frequency Circuit PWM Inverters l VDSS RDS(on) typ. Trr ID 500V 0.28Ω 170ns


    Original     		IRFP17N50LS 170ns SMD-247 O-247AC. SMD-247 P450S IRFP450S IRF igbt gate driver MOSFET IRF 630 st smd diode marking code ET MOSFET IRF 630 Datasheet MOSFET IRF 570 MOSFET IRF 603 PDF

    IRFR420A

    Abstract: IRFR120 IRFU120 IRFU420A pn junction diode
    Text: PD - 94355 IRFR420A IRFU420A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching HEXFET Power MOSFET l VDSS RDS(on) max ID 3.0Ω 3.3A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement


    Original     		IRFR420A IRFU420A 12-Mar-07 IRFR420A IRFR120 IRFU120 IRFU420A pn junction diode PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94356A IRFR430A IRFU430A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching HEXFET Power MOSFET l VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement


    Original     		4356A IRFR430A IRFU430A 08-Mar-07 PDF

    9435

    Abstract: No abstract text available
    Text: PD - 94355 IRFR420A IRFU420A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching HEXFET Power MOSFET l VDSS RDS(on) max ID 3.0Ω 3.3A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement


    Original     		IRFR420A IRFU420A 08-Mar-07 9435 PDF

    94356

    Abstract: IRFR120 IRFR430A IRFU120 IRFU430A
    Text: PD - 94356 IRFR430A IRFU430A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching HEXFET Power MOSFET l VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement


    Original     		IRFR430A IRFU430A 94356 IRFR120 IRFR430A IRFU120 IRFU430A PDF

    IRFR420A

    Abstract: IRFR120 IRFU120 IRFU420A
    Text: PD - 94355 IRFR420A IRFU420A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching HEXFET Power MOSFET l VDSS RDS(on) max ID 3.0Ω 3.3A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement


    Original     		IRFR420A IRFU420A IRFR420A IRFR120 IRFU120 IRFU420A PDF

    94356

    Abstract: No abstract text available
    Text: PD - 94356A IRFR430A IRFU430A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching HEXFET Power MOSFET l VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement


    Original     		4356A IRFR430A IRFU430A 94356 PDF

    IRF Power MOSFET code marking

    Abstract: EIA-541 IRFR430A IRFU430A R120 IRF MOSFET 10A P 94356 IRF 250V 100A IRF 50A IRF GATE LOGIC
    Text: PD - 94356B IRFR430A IRFU430A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l HEXFET Power MOSFET VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement


    Original     		94356B IRFR430A IRFU430A EIA-481 EIA-541. EIA-481. IRF Power MOSFET code marking EIA-541 IRFR430A IRFU430A R120 IRF MOSFET 10A P 94356 IRF 250V 100A IRF 50A IRF GATE LOGIC PDF

    9435 fairchild

    Abstract: 9435 mosfet mosfet 9435 Si9435DY 9435 so8
    Text: Si9435DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain


    Original     		Si9435DY 9435 fairchild 9435 mosfet mosfet 9435 9435 so8 PDF

    8 pin ic 9435

    Abstract: 9435, ic 9435 fairchild 9435 so8 ic 9435 marking 9435 9435 GM st 9435, ic ST 9435 MOSFET code 9435
    Text: Si9435DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain


    Original     		Si9435DY 8 pin ic 9435 9435, ic 9435 fairchild 9435 so8 ic 9435 marking 9435 9435 GM st 9435, ic ST 9435 MOSFET code 9435 PDF

    9435BDYSC

    Abstract: 9435B MTP9435 MTP9435BDYQ8 9435BDY 9435 9435bd
    Text: CYStech Electronics Corp. Spec. No. : C386Q8 Issued Date : 2007.06.08 Revised Date : Page No. : 1/6 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP9435BDYQ8 Description The MTP9435BDYQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best


    Original     		C386Q8 MTP9435BDYQ8 MTP9435BDYQ8 UL94V-0 9435BDYSC 9435B MTP9435 9435BDY 9435 9435bd PDF

    9435a

    Abstract: FDS9435A data 9435a mosfet p 9435a
    Text: FDS9435A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive


    Original     		FDS9435A FDS9435A 9435a FDS9435A data 9435a mosfet p 9435a PDF

    9435 so8

    Abstract: MOSFET code 9435 9435 mosfet 9435p 9435 so package
    Text: AF9435P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low Gate Charge - Fast Switching Speed The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and


    Original     		AF9435P 9435P 9435 so8 MOSFET code 9435 9435 mosfet 9435 so package PDF

    9435 sop-8

    Abstract: 9435 tr 9435 B9435 9435 mosfet 9435 sop 8 mosfet 9435 to mosfet 9435 MTP9435 MOSFET code 9435
    Text: CYStech Electronics Corp. Spec. No. : C400Q8 Issued Date : 2006.03.31 Revised Date : Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP9435Q8 Description The MTP9435Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost


    Original     		C400Q8 MTP9435Q8 MTP9435Q8 UL94V-0 9435 sop-8 9435 tr 9435 B9435 9435 mosfet 9435 sop 8 mosfet 9435 to mosfet 9435 MTP9435 MOSFET code 9435 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET IC SMD Type P-Channel Enhancement Mode MOSFET SI9435DY • Features ● 5.3 A, -30 V. RDS ON = 50 mΩ @ VGS = -10 V RDS(ON) = 80 mΩ @ VGS = -4.5 V ● Low gate charge ● Fast switching speed ● High performance trench technology for extremely low RDS(ON)


    Original     		SI9435DY PDF