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    MOSFET 900V 2A Search Results

    MOSFET 900V 2A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1775-E Renesas Electronics Corporation Nch Single Power Mosfet 900V 8A 1600Mohm To-3Pfm Visit Renesas Electronics Corporation
    2SK1808-E Renesas Electronics Corporation Nch Single Power Mosfet 900V 4A 4000Mohm To-220Fm Visit Renesas Electronics Corporation
    2SK1647L-E Renesas Electronics Corporation Nch Single Power Mosfet 900V 2A 7000Mohm LDPAK(L)/To-262 Visit Renesas Electronics Corporation
    2SK1340-E Renesas Electronics Corporation Nch Single Power Mosfet 900V 5A 4000Mohm To-3P Visit Renesas Electronics Corporation
    2SK1807-E Renesas Electronics Corporation Nch Single Power Mosfet 900V 4A 4000Mohm To-220Ab Visit Renesas Electronics Corporation

    MOSFET 900V 2A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N90Z Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N90Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a


    Original     		PDF 2N90Z 2N90Z O-220F QW-R502-848

    2N90

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N90 Preliminary Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a


    Original     		PDF O-220 O-220F O-252 QW-R502-478 2N90

    2n90

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N90 Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a


    Original     		PDF O-251 O-252 O-220 O-220F QW-R502-478 2n90

    2N90

    Abstract: 900v 2.2a
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N90 Preliminary Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a


    Original     		PDF O-252 O-251 O-220 QW-R502-478 2N90 900v 2.2a

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N90 Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state resistance and


    Original     		PDF QW-R502-478

    9n80

    Abstract: 9N90-T3P-T 9N90 9N90L-T3P-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET „ DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable


    Original     		PDF 9N90L 9N90G 9N90-T3P-T 9N90L-T3P-T QW-R502-217 9n80 9N90-T3P-T 9N90 9N90L-T3P-T

    9N90L-T3P-T

    Abstract: TO247 package dissipation 9N90
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET „ DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable


    Original     		PDF 9N90L-T47-T 9N90G-T47-T 9N90L-T3P-T 9N90G-T3P-T 9N90L-T47t QW-R502-217 9N90L-T3P-T TO247 package dissipation 9N90

    9n90

    Abstract: w 9n90 220f1 9N90L-T3P-T MOSFET 900V 2A TO-220F1 TO-220-F1
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET „ DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable


    Original     		PDF O-247 O-220F1 9N90L-T47-T 9N90G-t QW-R502-217 9n90 w 9n90 220f1 9N90L-T3P-T MOSFET 900V 2A TO-220F1 TO-220-F1

    AOTF4N90

    Abstract: No abstract text available
    Text: AOTF4N90 900V,4A N-Channel MOSFET General Description Product Summary The AOTF4N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along


    Original     		PDF AOTF4N90 AOTF4N90 AOTF4N90L O-220F

    Untitled

    Abstract: No abstract text available
    Text: AOTF4N90 900V,4A N-Channel MOSFET General Description Product Summary The AOTF4N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along


    Original     		PDF AOTF4N90 AOTF4N90 AOTF4N90L O-220F Drain-90

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET „ DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable


    Original     		PDF 9N90L-T47-T 9N90G-T47-T 9N90L-T3P-T 9N90G-T3P-T 9N90at QW-R502-217

    9N90

    Abstract: w 9n90 9N90L-T3P-T 9N90-T3P-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET „ DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		PDF 9N90L QW-R502-217 9N90 w 9n90 9N90L-T3P-T 9N90-T3P-T

    Untitled

    Abstract: No abstract text available
    Text: AOTF3N90 900V, 2.4A N-Channel MOSFET General Description Product Summary The AOTF3N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss


    Original     		PDF AOTF3N90 AOTF3N90 AOTF3N90L O-220F

    Untitled

    Abstract: No abstract text available
    Text: AOTF4N90 900V,4A N-Channel MOSFET General Description Product Summary The AOTF4N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along


    Original     		PDF AOTF4N90 AOTF4N90 AOTF4N90L O-220F Drain-Sou90

    3n90

    Abstract: 3N90L
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N90 Power MOSFET 3A, 900V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N90 provides excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF 3N90L-TA3-T 3N90G-TA3-T 3N90L-TF3-T 3N90G-TF3-T 3N90L-TQ2-T 3N90G-TQ2-T 3N90L-TQ2-R 3N90G-TQ2-R 3N90L-TM3-T 3N90G-TM3-T 3n90 3N90L

    Untitled

    Abstract: No abstract text available
    Text: AOTF3N90 900V, 2.4A N-Channel MOSFET General Description Product Summary The AOTF3N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss


    Original     		PDF AOTF3N90 AOTF3N90 AOTF3N90L O-220F

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N90-E Power MOSFET 3A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N90-E provides excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF 3N90-E 3N90-E 3N90L-TM3-T 3N90G-TM3-T 3N90L-TMS2-T 3N90G-TMS2-T 3N90L-TN3-R 3N90G-TN3-R O-251 O-251S2

    FS2KM18A

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS2KM-18A HIGH-SPEED SWITCHING USE FS2KM-18A + • VDSS . 900V • TDS ON (MAX) .7 .3 Q


    OCR Scan     		PDF FS2KM-18A FS2KM18A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS5KM-18A HIGH-SPEED SWITCHING USE FS5KM-18A ¡ »VDSS . 900V i • rDS ON (MAX) . 2 .8 0


    OCR Scan     		PDF FS5KM-18A 571D2

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS2UM-18A HIGH-SPEED SWITCHING USE FS2UM-18A m â / / / * V dss . 900V * r o s ON (MAX) . 7 .3 Q


    OCR Scan     		PDF FS2UM-18A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1VS-18A HIGH-SPEED SWITCHING USE FS1VS-18A * • V dss . 900V • ros ON (MAX) . 15.0Í2 • I D . 1A


    OCR Scan     		PDF FS1VS-18A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS2UM-18A HIGH-SPEED SWITCHING USE FS2UM-18A OUTLINE DRAWING Dimensions in mm 4.5 1.3 ILI U LU qw e O , q o- V d s s . 900V rDS ON (MAX) . 7.3Í1


    OCR Scan     		PDF FS2UM-18A O-220 57KH23

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET F S 5 V S - 1 8 A HIGH-SPEED SWITCHING USE FS5VS-18A OUTLINE DRAWING L q J w e Q w r o- V d s s . 900V I d . 5A


    OCR Scan     		PDF FS5VS-18A O-22QS 71Q-123

    SSS3N90A

    Abstract: SSS3N90
    Text: SSS3N90A Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 jA (Max. @ VDS = 900V Low R ds(on) : 4.679 (Typ.) - 900 V


    OCR Scan     		PDF SSS3N90A 7U4142 Q04DS3Ã SSS3N90A SSS3N90