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    MOSFET 900V 2A Search Results

    MOSFET 900V 2A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 900V 2A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FS2KM18A

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS2KM-18A HIGH-SPEED SWITCHING USE FS2KM-18A + • VDSS . 900V • TDS ON (MAX) .7 .3 Q


    OCR Scan     		FS2KM-18A FS2KM18A PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS5KM-18A HIGH-SPEED SWITCHING USE FS5KM-18A ¡ »VDSS . 900V i • rDS ON (MAX) . 2 .8 0


    OCR Scan     		FS5KM-18A 571D2 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N90Z Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N90Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a


    Original     		2N90Z 2N90Z O-220F QW-R502-848 PDF

    2N90

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N90 Preliminary Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a


    Original     		O-220 O-220F O-252 QW-R502-478 2N90 PDF

    2n90

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N90 Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a


    Original     		O-251 O-252 O-220 O-220F QW-R502-478 2n90 PDF

    2N90

    Abstract: 900v 2.2a
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N90 Preliminary Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a


    Original     		O-252 O-251 O-220 QW-R502-478 2N90 900v 2.2a PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS2UM-18A HIGH-SPEED SWITCHING USE FS2UM-18A m â / / / * V dss . 900V * r o s ON (MAX) . 7 .3 Q


    OCR Scan     		FS2UM-18A PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1VS-18A HIGH-SPEED SWITCHING USE FS1VS-18A * • V dss . 900V • ros ON (MAX) . 15.0Í2 • I D . 1A


    OCR Scan     		FS1VS-18A PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N90 Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state resistance and


    Original     		QW-R502-478 PDF

    9n80

    Abstract: 9N90-T3P-T 9N90 9N90L-T3P-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET „ DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable


    Original     		9N90L 9N90G 9N90-T3P-T 9N90L-T3P-T QW-R502-217 9n80 9N90-T3P-T 9N90 9N90L-T3P-T PDF

    9N90L-T3P-T

    Abstract: TO247 package dissipation 9N90
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET „ DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable


    Original     		9N90L-T47-T 9N90G-T47-T 9N90L-T3P-T 9N90G-T3P-T 9N90L-T47t QW-R502-217 9N90L-T3P-T TO247 package dissipation 9N90 PDF

    9n90

    Abstract: w 9n90 220f1 9N90L-T3P-T MOSFET 900V 2A TO-220F1 TO-220-F1
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET „ DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable


    Original     		O-247 O-220F1 9N90L-T47-T 9N90G-t QW-R502-217 9n90 w 9n90 220f1 9N90L-T3P-T MOSFET 900V 2A TO-220F1 TO-220-F1 PDF

    AOTF4N90

    Abstract: No abstract text available
    Text: AOTF4N90 900V,4A N-Channel MOSFET General Description Product Summary The AOTF4N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along


    Original     		AOTF4N90 AOTF4N90 AOTF4N90L O-220F PDF

    Untitled

    Abstract: No abstract text available
    Text: AOTF4N90 900V,4A N-Channel MOSFET General Description Product Summary The AOTF4N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along


    Original     		AOTF4N90 AOTF4N90 AOTF4N90L O-220F Drain-90 PDF

    9N90

    Abstract: w 9n90 9N90L-T3P-T 9N90-T3P-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET „ DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		9N90L QW-R502-217 9N90 w 9n90 9N90L-T3P-T 9N90-T3P-T PDF

    Untitled

    Abstract: No abstract text available
    Text: AOTF3N90 900V, 2.4A N-Channel MOSFET General Description Product Summary The AOTF3N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss


    Original     		AOTF3N90 AOTF3N90 AOTF3N90L O-220F PDF

    Untitled

    Abstract: No abstract text available
    Text: AOTF4N90 900V,4A N-Channel MOSFET General Description Product Summary The AOTF4N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along


    Original     		AOTF4N90 AOTF4N90 AOTF4N90L O-220F Drain-Sou90 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N90 Power MOSFET 3A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N90 provides excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


    Original     		3N90L-TA3-T 3N90G-TA3-T 3N90L-TC3-T 3N90G-TC3-T 3N90L-TF3-T 3N90G-TF3-T 3N90L-TF1-T 3N90G-TF1-T 3N90L-TF2-T 3N90G-TF2-T PDF

    3n90

    Abstract: 3N90L
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N90 Power MOSFET 3A, 900V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N90 provides excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


    Original     		3N90L-TA3-T 3N90G-TA3-T 3N90L-TF3-T 3N90G-TF3-T 3N90L-TQ2-T 3N90G-TQ2-T 3N90L-TQ2-R 3N90G-TQ2-R 3N90L-TM3-T 3N90G-TM3-T 3n90 3N90L PDF

    Untitled

    Abstract: No abstract text available
    Text: AOTF3N90 900V, 2.4A N-Channel MOSFET General Description Product Summary The AOTF3N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss


    Original     		AOTF3N90 AOTF3N90 AOTF3N90L O-220F PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N90-E Power MOSFET 3A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N90-E provides excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


    Original     		3N90-E 3N90-E 3N90L-TM3-T 3N90G-TM3-T 3N90L-TMS2-T 3N90G-TMS2-T 3N90L-TN3-R 3N90G-TN3-R O-251 O-251S2 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS2UM-18A HIGH-SPEED SWITCHING USE FS2UM-18A OUTLINE DRAWING Dimensions in mm 4.5 1.3 ILI U LU qw e O , q o- V d s s . 900V rDS ON (MAX) . 7.3Í1


    OCR Scan     		FS2UM-18A O-220 57KH23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET F S 5 V S - 1 8 A HIGH-SPEED SWITCHING USE FS5VS-18A OUTLINE DRAWING L q J w e Q w r o- V d s s . 900V I d . 5A


    OCR Scan     		FS5VS-18A O-22QS 71Q-123 PDF

    SSS3N90A

    Abstract: SSS3N90
    Text: SSS3N90A Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 jA (Max. @ VDS = 900V Low R ds(on) : 4.679 (Typ.) - 900 V


    OCR Scan     		SSS3N90A 7U4142 Q04DS3Ã SSS3N90A SSS3N90 PDF