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    MOSFET 800V 50A Search Results

    MOSFET 800V 50A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 800V 50A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK3529-01

    Abstract: No abstract text available
    Text: Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY 2SK3529-01 800V/1.9Ω/7A 1) Package TO-220 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current


    Original     		PDF 2SK3529-01 00V/1 O-220 25unless Tch150 MT5F12594 2SK3529-01

    2SK3530

    Abstract: 2SK3530-01MR
    Text: Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY 2SK3530-01MR 800V/1.9Ω/7A 1) Package TO-220F 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current


    Original     		PDF 2SK3530-01MR 00V/1 O-220F 25unless Tch150 MT5F12296 2SK3530 2SK3530-01MR

    sic mosfet

    Abstract: Microsemi MOSFET 1200V
    Text: APTMC120HRM40CT3G Phase Leg & Dual Common Emitter Power Module SiC MOSFET Q1, Q2 : VCES = 1200V ; RDSon = 40mΩ max @ Tj = 25°C Trench & Field Stop IGBT3 (Q3, Q4): VCES = 600V ; IC = 50A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies


    Original     		PDF APTMC120HRM40CT3G sic mosfet Microsemi MOSFET 1200V

    3 phase pfc

    Abstract: CCS050M12CM2 Cree SiC MOSFET
    Text: CCS050M12CM2 VDS 1.2 kV 1.2kV, 50A Silicon Carbide Six-Pack Three Phase Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 25 mΩ EOFF (TJ = 150˚C) 0.6 mJ Package Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current


    Original     		PDF CCS050M12CM2 CCS050M12CM2 3 phase pfc Cree SiC MOSFET

    Untitled

    Abstract: No abstract text available
    Text: CCS050M12CM2 VDS 1.2 kV 1.2kV, 50A Silicon Carbide Six-Pack Three Phase Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 25 mΩ EOFF (TJ = 150˚C) 0.6 mJ Package Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current


    Original     		PDF CCS050M12CM2 CCS050M12CM2

    APTM120U20D

    Abstract: APTM120A20D
    Text: APTM120A20D Phase leg with Series diodes MOSFET Power Module VDSS = 1200V RDSon = 200mΩ max @ Tj = 25°C ID = 50A @ Tc = 25°C Application • Zero Current Switching resonant mode Features • • • • G1 VBUS 0/VBUS OUT Power MOS 7 MOSFETs - Low RDSon


    Original     		PDF APTM120A20D APTM120U20D APTM120A20D

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    Untitled

    Abstract: No abstract text available
    Text: APTM120A20SG Phase leg Series & parallel diodes MOSFET Power Module VBUS Q1 G1 OUT S1 Q2 G2 0/VBUS S2 G1 VBUS 0/VBUS OUT S1 S2 G2 VDSS = 1200V RDSon = 200mΩ typ @ Tj = 25°C ID = 50A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies


    Original     		PDF APTM120A20SG APTM120A20SG

    Untitled

    Abstract: No abstract text available
    Text: QJD1210011 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 Description: Powerex Silicon Carbide MOSFET


    Original     		PDF QJD1210011 Amperes/1200 QJD1210011

    Untitled

    Abstract: No abstract text available
    Text: QJD1210006 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP)


    Original     		PDF QJD1210006 Amperes/1200 QJD1210006

    Untitled

    Abstract: No abstract text available
    Text: QJD1210007 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP)


    Original     		PDF QJD1210007 Amperes/1200 QJD1210007

    Untitled

    Abstract: No abstract text available
    Text: QJD1210010 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 Description: Powerex Silicon Carbide MOSFET


    Original     		PDF QJD1210010 Amperes/1200 QJD1210010

    Untitled

    Abstract: No abstract text available
    Text: QJD1210011 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 Description: Powerex Silicon Carbide MOSFET


    Original     		PDF QJD1210011 Amperes/1200 QJD1210011

    Untitled

    Abstract: No abstract text available
    Text: QJD1210010 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 Description: Powerex Silicon Carbide MOSFET


    Original     		PDF QJD1210010 Amperes/1200 QJD1210010

    1000 watts ups circuit diagram with detail

    Abstract: high frequency induction welder
    Text: QJD1210011 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 10 11 12 X B M N E G DETAIL "B"


    Original     		PDF QJD1210011 Amperes/1200 QJD1210011 1000 watts ups circuit diagram with detail high frequency induction welder

    Untitled

    Abstract: No abstract text available
    Text: QJD1210011 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 10 11 12 X B M N E G DETAIL "B"


    Original     		PDF QJD1210011 Amperes/1200

    Untitled

    Abstract: No abstract text available
    Text: QJD1210011 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 Description: Powerex Silicon Carbide MOSFET


    Original     		PDF QJD1210011 Amperes/1200 QJD1210011

    Untitled

    Abstract: No abstract text available
    Text: QJD1210010 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 Description: Powerex Silicon Carbide MOSFET


    Original     		PDF QJD1210010 Amperes/1200 QJD1210010

    Untitled

    Abstract: No abstract text available
    Text: QJD1210010 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 Description: Powerex Silicon Carbide MOSFET


    Original     		PDF QJD1210010 Amperes/1200 QJD1210010

    QJD1210006

    Abstract: DIAGRAM OF 5000 volts power inverter
    Text: QJD1210006 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A D K K K F E2 G2 U E2 H C1 J G1 E1 C2E1 Z AB EB UU H U AA Q Q P G N S - NUTS (3 TYP) T - (4 TYP) W V


    Original     		PDF QJD1210006 Amperes/1200 simplif25 DIAGRAM OF 5000 volts power inverter

    c 103 mosfet

    Abstract: silicon carbide 1200-VOLT QJD1210006
    Text: QJD1210006 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP)


    Original     		PDF QJD1210006 Amperes/1200 c 103 mosfet silicon carbide 1200-VOLT

    Untitled

    Abstract: No abstract text available
    Text: Advanced SSF6N80A Power MOSFET FEATURES Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^DS on = 2 . 0 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V ■ Low RDS(ON) : 1.472 £1 (Typ.)


    OCR Scan     		PDF SSF6N80A

    ssh6n80a

    Abstract: SSH6N80AS SSH6N80
    Text: Advanced SSH6N80AS Power MOSFET FEATURES - 800 V ^ D S o n = 2.0 Q. BVDSS • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V ■ Low RDS(ON) : 1.472 £1 (Typ.) CD


    OCR Scan     		PDF SSH6N80AS ssh6n80a SSH6N80AS SSH6N80

    Untitled

    Abstract: No abstract text available
    Text: Advanced SSS6N80A Power MOSFET FEATURES - 800 V ^DS on = 2.0 Q. Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V ■ Low RDS(ON) : 1.472 £1 (Typ.)


    OCR Scan     		PDF SSS6N80A