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    MOSFET 800V 16A Search Results

    MOSFET 800V 16A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 800V 16A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NTE2387

    Abstract: No abstract text available
    Text: NTE2387 MOSFET N–Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Drain–Gate Voltage RGS = 20kΩ , VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V


    Original     		NTE2387 NTE2387 PDF

    p7nk80zfp

    Abstract: P7NK80 p7nk80z STP7NK80ZFP STP7NK80Z STB7NK80Z STB7NK80Z-1 STB7NK80ZT4 p7nk80zf
    Text: STP7NK80Z - STP7NK80ZFP STB7NK80Z - STB7NK80Z-1 N-channel 800V - 1.5Ω - 5.2A - TO-220/TO-220FP/D2PAK/I2PAK Zener-protected SuperMESH Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STP7NK80Z 800V < 1.8Ω 5.2A STP7NK80ZFP 800V < 1.8Ω 5.2A


    Original     		STP7NK80Z STP7NK80ZFP STB7NK80Z STB7NK80Z-1 O-220/TO-220FP/D2PAK/I2PAK STP7NK80Z STB7NK80Z O-220FP p7nk80zfp P7NK80 p7nk80z STP7NK80ZFP STB7NK80Z-1 STB7NK80ZT4 p7nk80zf PDF

    B7NK80Z

    Abstract: No abstract text available
    Text: STB7NK80Z, STB7NK80Z-1 STP7NK80ZFP, STP7NK80Z N-channel 800 V, 1.5 Ω, 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK Zener-protected SuperMESH Power MOSFET Features VDSS @Tjmax Type RDS(on) ID STP7NK80Z 800V < 1.8Ω 5.2A STP7NK80ZFP 800V < 1.8Ω 5.2A STB7NK80Z


    Original     		STB7NK80Z, STB7NK80Z-1 STP7NK80ZFP, STP7NK80Z O-220 O-220FP STP7NK80ZFP STB7NK80Z B7NK80Z PDF

    P7NK80

    Abstract: p7nk80zf P7NK80ZFP p7nk STP7NK80ZFP P7NK80Z b7nk80z b7nk80 8979 STB7NK80Z-1
    Text: STB7NK80Z, STB7NK80Z-1 STP7NK80ZFP, STP7NK80Z N-channel 800 V, 1.5 Ω, 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK Zener-protected SuperMESH Power MOSFET Features VDSS @Tjmax Type RDS(on) ID STP7NK80Z 800V < 1.8Ω 5.2A STP7NK80ZFP 800V < 1.8Ω 5.2A STB7NK80Z


    Original     		STB7NK80Z, STB7NK80Z-1 STP7NK80ZFP, STP7NK80Z O-220 O-220FP STP7NK80ZFP STB7NK80Z P7NK80 p7nk80zf P7NK80ZFP p7nk STP7NK80ZFP P7NK80Z b7nk80z b7nk80 8979 STB7NK80Z-1 PDF

    32N80Q3

    Abstract: No abstract text available
    Text: Advance Technical Information IXFR32N80Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 800V 24A Ω 300mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions


    Original     		IXFR32N80Q3 300ns ISOPLUS247 E153432 32N80Q3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFR32N80Q3 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 800V 24A Ω 300mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated ISOPLUS247 E153432 Symbol


    Original     		IXFR32N80Q3 300ns ISOPLUS247 E153432 32N80Q3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFR32N80Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated = = ≤ ≤ 800V 24A Ω 300mΩ 300ns ISOPLUS247 E153432 Symbol


    Original     		IXFR32N80Q3 300ns ISOPLUS247 E153432 32N80Q3 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS2UM-16A HIGH-SPEED SWITCHING USE FS2UM-16A • Voss .800V • rDS ON (MAX) .6.0Q • Id . 2A


    OCR Scan     		FS2UM-16A PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS5VS-16A HIGH-SPEED SWITCHING USE FS5VS-16A OUTLINE DRAWING Dimensions in mm • V dss . 800V • rDS ON (MAX) . 2.3Q


    OCR Scan     		FS5VS-16A O-220S PDF

    FS5UM-16A

    Abstract: 71Q1
    Text: MITSUBISHI Neh POWER MOSFET FS5UM-16A HIGH-SPEED SWITCHING USE FS5UM-16A OUTLINE DRAWING Dimensions in mm V d s s .800V rDS ON (MAX) . 2.3Í1


    OCR Scan     		FS5UM-16A O-220 71Q-123 FS5UM-16A 71Q1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS5UM-16A HIGH-SPEED SWITCHING USE FS5UM-16A • VOSS . 800V • TDS ON (MAX) . 2 .3 ÎÎ • I D . 5A


    OCR Scan     		FS5UM-16A PDF

    T7111

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS3VS-16A HIGH-SPEED SWITCHING USE FS3VS-16A OUTLINE DRAWING I q J w e Q w r V d s s . 800V I d . 3A


    OCR Scan     		FS3VS-16A O-22QS 571Q-123 T7111 PDF

    MOSFET IGSS 100nA VDS 20V

    Abstract: FS1KM-16A
    Text: MITSUBISHI Neh POWER MOSFET FS1KM-16A HIGH-SPEED SWITCHING USE I FS1KM-16A OUTLINE DRAWING Dimensions in mm • V d s s . 800V • TDS ON (MAX) . 12 .3Í2


    OCR Scan     		FS1KM-16A O-220FN 571CH23 MOSFET IGSS 100nA VDS 20V FS1KM-16A PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS3KM-16A HIGH-SPEED SWITCHING USE FS3KM-16A OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 • V ds s . 800V • TDS ON (M AX) . 3.3Q


    OCR Scan     		FS3KM-16A O-220FN PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS5KM-16A HIGH-SPEED SWITCHING USE FS5KM-16A OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 • vdss 2 8 ± 0 .2 . 800V • rDS ON (MAX) . 2.3Í2


    OCR Scan     		FS5KM-16A O-220FN 571Q2 PDF

    FS5KM16A

    Abstract: mosfet 10a 800v FS5KM-16A MOSFET 800V 16A
    Text: MITSUBISHI Neh POWER MOSFET FS5KM-16A HIGH-SPEED SWITCHING USE FS5KM-16A OUTLINE DRAWING Dimensions in mm 10 ± 0 . 3 2.8 ± 0 . 2 V d s s . 800V rDS ON (MAX) . 2.3Í1


    OCR Scan     		FS5KM-16A O-22QFN FS5KM16A mosfet 10a 800v FS5KM-16A MOSFET 800V 16A PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1KM-16A HIGH-SPEED SWITCHING USE FS1KM-16A OUTLINE DRAW ING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 V d s s . 800V rDS ON (MAX) . 12 .3 Í1


    OCR Scan     		FS1KM-16A O-220FN PDF

    TO-220FN Switching power supply

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS2KM-16A HIGH-SPEED SWITCHING USE FS2KM-16A OUTLINE DRAWING Dimensions in mm 2.8 ± 0.2 10 ± 0 3 w v y • V dss . 800V • TDS ON (MAX) . 6 .0 0


    OCR Scan     		FS2KM-16A O-220FN TO-220FN Switching power supply PDF

    HCO2

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET ! FS7KM-16A I i HIGH-SPEED SWITCHING USE FS7KM-16A OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 # J 2.8 ± 0 .2 # • V dss . 800V • rDS ON (MAX) .1 .6 4 0


    OCR Scan     		FS7KM-16A FS7KM-16A O-220FN HCO2 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS3SM-16A HIGH-SPEED SWITCHING USE FS3SM-16A OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 trT 4.4 1.0 5.45 5.45 0.6 4 Q w r q w e r q V d s s . 800V


    OCR Scan     		FS3SM-16A 57KH23 PDF

    te 330

    Abstract: LGS G 24 OV R mosfet 16a 800v
    Text: MITSUBISHI Neh POWER MOSFET FS3UM-16A HIGH-SPEED SWITCHING USE FS3UM-16A OUTLINE DRAWING Dimensions in mm 4.5 1.3 V / O 2 < X gate 2- DRAIN 3' SOURCE i: DRAIN • V dss . 800V • ro s ON (MAX) . 3 .3 Í Í


    OCR Scan     		FS3UM-16A O-220 te 330 LGS G 24 OV R mosfet 16a 800v PDF

    FS10SM16A

    Abstract: FS10SM-16A fs10sm16 MOSFET 800V 10A TO-3P
    Text: MITSUBISHI Neh POWER MOSFET FS10SM-16A HIGH-SPEED SWITCHING USE FS10SM-16A OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 <t>3.2 uX kr • r 4.4 1.0 5.45 5.45 0.6 ] bd^ Q w r q w e r V d s s . 800V


    OCR Scan     		FS10SM-16A 57KH23 FS10SM16A FS10SM-16A fs10sm16 MOSFET 800V 10A TO-3P PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS5SM-16A HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4 .5 0.6 • V d s s . 800V X GATE 2 D R A IN 3 SOURCE i D R A IN • TDS ON (MAX) . 2.3Í2


    OCR Scan     		FS5SM-16A PDF

    mosfet 800v 15a

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS3KM-16A HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 s l s l 1.1 ± 0.2 0.75 ± 0 .1 5 q GATE w DRAIN e SOURCE V d s s .800V


    OCR Scan     		FS3KM-16A O-220FN mosfet 800v 15a PDF