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    MOSFET 800V 10A Search Results

    MOSFET 800V 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 800V 10A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    mosfet 10a 800v

    Abstract: MOSFET 800V 10A SSH10N80A mosfet 10a 800v fs
    Text: N-CHANNEL POWER MOSFET SSH10N80A FEATURES BVDSS = 800V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 800V


    Original     		SSH10N80A mosfet 10a 800v MOSFET 800V 10A SSH10N80A mosfet 10a 800v fs PDF

    W18NK80Z

    Abstract: w18nk80 mosfet w18nk80z STW18NK80Z JESD97 w18nk 920 diode zener
    Text: STW18NK80Z N-channel 800V - 0.34Ω - 19A - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID pW STW18NK80Z 800V <0.38Ω 19A 350W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized


    Original     		STW18NK80Z O-247 W18NK80Z w18nk80 mosfet w18nk80z STW18NK80Z JESD97 w18nk 920 diode zener PDF

    W18NK80Z

    Abstract: w18nk80 mosfet w18nk80z w18nk STW18NK80Z JESD97
    Text: STW18NK80Z N-channel 800V - 0.34Ω - 19A - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID pW STW18NK80Z 800V <0.38Ω 19A 350W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized


    Original     		STW18NK80Z O-247 W18NK80Z w18nk80 mosfet w18nk80z w18nk STW18NK80Z JESD97 PDF

    Untitled

    Abstract: No abstract text available
    Text: R8010ANX Nch 800V 10A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 0.56W ID 10A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		R8010ANX O-220FM R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 90574 IRFAE50 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE50 BVDSS 800V RDS(on) 1.2Ω ID 7.1Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		IRFAE50 O-204AA/AE) PDF

    mosfet 10a 800v

    Abstract: IRFAE50 diode 71A
    Text: PD - 90574 IRFAE50 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE50 BVDSS 800V RDS(on) 1.2Ω ID 7.1Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		IRFAE50 O-204AA/AE) p252-7105 mosfet 10a 800v IRFAE50 diode 71A PDF

    mosfet 10a 800v

    Abstract: IRFAE30
    Text: PD - 90614 IRFAE30 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE30 BVDSS 800V RDS(on) 3.2Ω ID 3.1Α The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		IRFAE30 O-204AA/AE) parame252-7105 mosfet 10a 800v IRFAE30 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 90579 IRFAE40 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE40 BVDSS 800V RDS(on) 2.0Ω ID 4.8Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		IRFAE40 O-204AA/AE) PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 90614 IRFAE30 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE30 BVDSS 800V RDS(on) 3.2Ω ID 3.1Α The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		IRFAE30 O-204AA/AE) PDF

    mosfet 10a 800v

    Abstract: IRFAE40
    Text: PD - 90579 IRFAE40 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE40 BVDSS 800V RDS(on) 2.0Ω ID 4.8Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		IRFAE40 O-204AA/AE) mosfet 10a 800v IRFAE40 PDF

    MOSFET 800V 10A TO-3P

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		10N80 10N80 10N80L-T3P-T QW-R502-218 MOSFET 800V 10A TO-3P PDF

    MOSFET 800V 10A TO-3P

    Abstract: 10n80 mosfet 337
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		10N80 10N80 10N80L-T3P-T 10N80G-T3P-T 10N80L-TF1-T 10N80G-TF1ues QW-R502-218 MOSFET 800V 10A TO-3P mosfet 337 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		10N80 10N80 10N80L-T3P-T 10N80G-T3P-T 10N80L-TC3-T 10N8at QW-R502-218 PDF

    10N80L

    Abstract: 10n80 MOSFET 800V 10A TO-3P mosfet 10a 800v high power
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		10N80 10N80 10N80L-T3P-T 10N80G-T3P-T 10N80L-TC3-T 10N80G-TC3ues QW-R502-218 10N80L MOSFET 800V 10A TO-3P mosfet 10a 800v high power PDF

    mosfet 10a 800v

    Abstract: MOSFET 800V 10A TO-3P 10N80 MOSFET 800V 10A 10N80L mosfet 10a 800v high power
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		10N80 10N80 10N80L-T3P-T 10N80G-T3P-T 10N80L-TF1-T 10N80G-t QW-R502-218 mosfet 10a 800v MOSFET 800V 10A TO-3P MOSFET 800V 10A 10N80L mosfet 10a 800v high power PDF

    10N80

    Abstract: MOSFET 800V 10A 10n8 mosfet 800v diode 218
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		10N80 10N80 10N80L-T3P-T 10N80G-T3P-T QW-R502-218 MOSFET 800V 10A 10n8 mosfet 800v diode 218 PDF

    10n80

    Abstract: MOSFET 800V 10A MOSFET 800V 10A TO-3P 10n80 transistor 10N80L VDD400 mosfet 10a 800v
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		10N80 10N80 10N80L 10N80G 10N80-T3P-T QW-R502-218 MOSFET 800V 10A MOSFET 800V 10A TO-3P 10n80 transistor 10N80L VDD400 mosfet 10a 800v PDF

    10n80

    Abstract: MOSFET 800V 10A TO-3P MOSFET 800V 10A mosfet 10a 800v high power
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		10N80 10N80 10N80L-T3P-T 10N80G-T3P-T 10N80L-TF1-T 10N80G-TF1-Tt QW-R502-218 MOSFET 800V 10A TO-3P MOSFET 800V 10A mosfet 10a 800v high power PDF

    Untitled

    Abstract: No abstract text available
    Text: TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) 800 1.05 @ VGS =10V ID (A) 9.5 General Description The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS


    Original     		TSM10N80 O-220 ITO-220 TSM10N80 PDF

    FQA10N80C

    Abstract: No abstract text available
    Text: TM FQA10N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQA10N80C FQA10N80C PDF

    MOSFET 800V 10A

    Abstract: ssf10n80a Tc-25-t
    Text: SSF10N80A Advanced Power MOSFET FEATURES BVdss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS= 800V


    OCR Scan     		SSF10N80A MOSFET 800V 10A ssf10n80a Tc-25-t PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA IXFA IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P VDSS ID25 TO-220AB (IXFP) TO-3P (IXFQ) RDS(on) trr G G D S S G D (TAB) DS = 800V = 10A Ω ≤ 1.1Ω


    Original     		IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P O-220AB O-263 250ns O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: STU10NB80 N - CHANNEL 800V - 0.65ft - 10A - Max220 _PowerMESH MOSFET PRELIMINARY DATA TYPE S TU 10N B80 • . . . . V dss R dS oii Id 800 V < 0.8 Q. 10 A TYPICAL R D S (on) = 0.65 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    OCR Scan     		STU10NB80 Max220 Max220 P011R PDF

    STU10NB80

    Abstract: No abstract text available
    Text: STU10NB80 N - CHANNEL 800V - 0.65Ω - 10A - Max220 PowerMESH MOSFET PRELIMINARY DATA TYPE STU10NB80 • ■ ■ ■ ■ V DSS R DS on ID 800 V < 0.8 Ω 10 A TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		STU10NB80 Max220 STU10NB80 PDF