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    MOSFET 800 V Search Results

    MOSFET 800 V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 800 V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    P4NK80Zfp

    Abstract: p4nk80z d4nk80z p4nk80 d4nk8 STP4NK80ZFP STD4NK80Z-1 STD4NK80Z STD4NK80ZT4 STP4NK80Z
    Text: STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-CHANNEL 800V - 3Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 • ■ ■ ■ ■ ■ VDSS RDS on 800 800 800 800 < 3.5 < 3.5


    Original     		STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 O-220/TO-220FP/DPAK/IPAK STP4NK80Z STD4NK80Z P4NK80Zfp p4nk80z d4nk80z p4nk80 d4nk8 STP4NK80ZFP STD4NK80Z-1 STD4NK80ZT4 PDF

    f11nm80

    Abstract: p11nm80 B11NM80 STP11NM80 W11NM80 f11n STB11NM80 STB11NM80T4 STF11NM80 STW11NM80
    Text: STP11NM80 - STB11NM80 STF11NM80 - STW11NM80 N-CHANNEL 800V - 0.35Ω - 11A TO-220/FP/D2PAK/TO-247 MDmesh Power MOSFET TARGET DATA TYPE STP11NM80 STF11NM80 STB11NM80 STW11NM80 VDSS RDS on Rds(on)*Qg 800 800 800 800 < 0.40 Ω < 0.40 Ω < 0.40 Ω < 0.40 Ω


    Original     		STP11NM80 STB11NM80 STF11NM80 STW11NM80 O-220/FP/D2PAK/TO-247 STP11NM80 STF11NM80 O-220 f11nm80 p11nm80 B11NM80 W11NM80 f11n STB11NM80 STB11NM80T4 STW11NM80 PDF

    p7nc80zf

    Abstract: p7nc80 P7NC80Zfp p7nc80z B2 Zener P7NC L9 Zener STB7NC80Z STB7NC80Z-1 STB7NC80ZT4
    Text: STP7NC80Z - STP7NC80ZFP STB7NC80Z - STB7NC80Z-1 N-CHANNEL 800V - 1.3Ω - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE STP7NC80Z STP7NC80ZFP STB7NC80Z STB7NC80Z-1 • ■ ■ ■ ■ VDSS RDS on 800 800 800 800 < < < < V V V V 1.5 Ω


    Original     		STP7NC80Z STP7NC80ZFP STB7NC80Z STB7NC80Z-1 O-220/FP/D2PAK/I2PAK STP7NC80Z STB7NC80Z O-220 p7nc80zf p7nc80 P7NC80Zfp p7nc80z B2 Zener P7NC L9 Zener STB7NC80Z-1 STB7NC80ZT4 PDF

    P7NK80

    Abstract: p7nk80zfp P7NK80Z p7nk80zf STP7NK80ZFP b7nk80z p7nk STP7NK80Z STB7NK80Z STB7NK80Z-1
    Text: STP7NK80Z - STP7NK80ZFP STB7NK80Z - STB7NK80Z-1 N-CHANNEL800V-1.5Ω - 5.2A TO-220/TO-220FP/I2PAK/D2PAK Zener-Protected SuperMESH Power MOSFET TYPE STP7NK80Z STP7NK80ZFP STB7NK80Z STB7NK80Z-1 • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 800 800 800 < 1.8 Ω


    Original     		STP7NK80Z STP7NK80ZFP STB7NK80Z STB7NK80Z-1 N-CHANNEL800V-1 O-220/TO-220FP/I2PAK/D2PAK STP7NK80Z STB7NK80Z P7NK80 p7nk80zfp P7NK80Z p7nk80zf STP7NK80ZFP b7nk80z p7nk STB7NK80Z-1 PDF

    f3nk80z

    Abstract: p3nk80z D3NK80Z f3nk80z DATA D3NK8 f3nk80 STD3NK80ZT4 STF3NK80Z STP3NK80Z STD3NK80Z
    Text: STP3NK80Z - STF3NK80Z STD3NK80Z - STD3NK80Z-1 N-CHANNEL 800V - 3.8Ω - 2.5A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STP3NK80Z STF3NK80Z STD3NK80Z STD3NK80Z-1 • ■ ■ ■ ■ ■ VDSS RDS on 800 800 800 800


    Original     		STP3NK80Z STF3NK80Z STD3NK80Z STD3NK80Z-1 O-220/TO-220FP/DPAK/IPAK STP3NK80Z STD3NK80Z f3nk80z p3nk80z D3NK80Z f3nk80z DATA D3NK8 f3nk80 STD3NK80ZT4 STF3NK80Z PDF

    Untitled

    Abstract: No abstract text available
    Text: FQA7N80C_F109 N-Channel QFET MOSFET 800 V, 7 A, 1.9 Ω Features Description • 7.0 A, 800 V, RDS on = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar


    Original     		FQA7N80C PDF

    Untitled

    Abstract: No abstract text available
    Text: FQP7N80C / FQPF7N80C N-Channel QFET MOSFET 800 V, 6.6 A, 1.9 Ω Description Features • 6.6 A, 800 V, RDS on = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.3 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar


    Original     		FQP7N80C FQPF7N80C O-220Mâ PDF

    Untitled

    Abstract: No abstract text available
    Text: FQA10N80C_F109 N-Channel QFET MOSFET 800 V, 10 A, 1.1 Ω Features Description • 10 A, 800 V, RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe


    Original     		FQA10N80C PDF

    Untitled

    Abstract: No abstract text available
    Text: FQP6N80C / FQPF6N80C N-Channel QFET MOSFET 800 V, 5.5 A, 2.5 Ω Description Features • 5.5 A, 800 V, RDS on = 2.5 Ω (Max.) @ VGS = 10 V, ID = 2.75 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar


    Original     		FQP6N80C FQPF6N80C O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET MOSFET 800 V, 8.0 A, 1.55 Ω Description Features • 8.0 A, 800 V, RDS on = 1.55 Ω (Max.) @ VGS = 10 V, ID = 4.0 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar


    Original     		FQP8N80C FQPF8N80C FQPF8N80CYDTU PDF

    CMAC

    Abstract: No abstract text available
    Text: PRELIMINARY SPECIFICATION CM2002-800 Product Description High Linearity MOSFET Quad Mixer For GSM800 and Cellular BTS The CM2002-800 is a high linearity, passive MOSFET Quad Mixer Features for GSM800 and Cellular Base Station Receivers, exhibiting high •


    Original     		CM2002-800 CM2002-800 GSM800 CMAC PDF

    18NM80

    Abstract: W18NM80 STW18NM80 STB18NM80 STP18NM80 15421 stf18nm80
    Text: STB18NM80, STF18NM80 STP18NM80, STW18NM80 N-channel 800 V, 0.25 Ω, 17 A, MDmesh Power MOSFET D2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @Tjmax RDS(on) max ID STB18NM80 800 V < 0.295 Ω 17 A STF18NM80 800 V < 0.295 Ω 17 A STP18NM80 800 V < 0.295 Ω


    Original     		STB18NM80, STF18NM80 STP18NM80, STW18NM80 O-220FP, O-220, O-247 STB18NM80 STP18NM80 18NM80 W18NM80 STW18NM80 STB18NM80 STP18NM80 15421 stf18nm80 PDF

    F7NM80

    Abstract: D7NM8 D7NM80 P7NM80 STD7NM80 TO-251 footprint STD7NM80-1 STP7NM80 STF7NM80
    Text: STD7NM80, STD7NM80-1 STF7NM80, STP7NM80 N-channel 800 V, 0.95 Ω, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh Power MOSFET Features Type VDSS RDS on ID STD7NM80 800 V < 1.05 Ω 6.5 A STD7NM80-1 800 V < 1.05 Ω 6.5 A STF7NM80 800 V < 1.05 Ω 6.5 A STP7NM80


    Original     		STD7NM80, STD7NM80-1 STF7NM80, STP7NM80 O-220, O-220FP, STD7NM80 STF7NM80 F7NM80 D7NM8 D7NM80 P7NM80 STD7NM80 TO-251 footprint STD7NM80-1 STP7NM80 STF7NM80 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQP2N80 N-Channel QFET MOSFET 800 V, 2.4 A, 6.3 Ω Description Features • 2.4 A, 800 V, RDS on = 6.3 Ω (Max.) @ VGS = 10 V, ID = 1.2 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced


    Original     		FQP2N80 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQB9N50C N-Channel QFET MOSFET 500 V, 9 A, 800 mΩ Features Description • 9 A, 500 V, RDS on = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced


    Original     		FQB9N50C PDF

    P8NK80ZFP

    Abstract: w8nk80z P8NK80 p8nk80z p8nk p8nk8 L9 Zener STW8NK80Z STP8NK80Z STP8NK80ZFP
    Text: STP8NK80Z - STP8NK80ZFP STW8NK80Z N-CHANNEL 800V - 1.3Ω - 6.2A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP8NK80Z STP8NK80ZFP STW8NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V 800 V 800 V < 1.5 Ω < 1.5 Ω < 1.5 Ω


    Original     		STP8NK80Z STP8NK80ZFP STW8NK80Z O-220/TO-220FP/TO-247 STP8NK80Z O-220 O-220FP O-247 P8NK80ZFP w8nk80z P8NK80 p8nk80z p8nk p8nk8 L9 Zener STW8NK80Z STP8NK80ZFP PDF

    p10nk80zfp

    Abstract: P10NK80 p10nk80z w10nk80z p10nk80zfp equivalent w10nk80 mosfet P10NK80Z STW10NK80Z STP10NK80ZFP p10nk
    Text: STP10NK80Z - STP10NK80ZFP STW10NK80Z N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP10NK80Z STP10NK80ZFP STW10NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V 800 V 800 V < 0.90 Ω < 0.90 Ω < 0.90 Ω


    Original     		STP10NK80Z STP10NK80ZFP STW10NK80Z O-220/TO-220FP/TO-247 STP10NK80Z O-220 O-220FP O-247 p10nk80zfp P10NK80 p10nk80z w10nk80z p10nk80zfp equivalent w10nk80 mosfet P10NK80Z STW10NK80Z STP10NK80ZFP p10nk PDF

    F3NK80Z

    Abstract: 9565 p3nk80z D3NK8 D3NK80Z STD3NK80Z STD3NK80Z-1 STD3NK80ZT4 STF3NK80Z STP3NK80Z
    Text: STD3NK80Z, STD3NK80Z-1 STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 Ω, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH Power MOSFET Features VDSS @Tjmax Type RDS(on) ID STP3NK80Z 800 V < 4.5 Ω 2.5 A STF3NK80Z 800 V < 4.5 Ω 2.5 A STD3NK80Z


    Original     		STD3NK80Z, STD3NK80Z-1 STF3NK80Z, STP3NK80Z O-220, O-220FP, STF3NK80Z STD3NK80Z F3NK80Z 9565 p3nk80z D3NK8 D3NK80Z STD3NK80Z STD3NK80Z-1 STD3NK80ZT4 STF3NK80Z STP3NK80Z PDF

    6N80

    Abstract: 6N80A JM24A JM-24 N80A JM-24A
    Text: VDSS Standard Power MOSFET IXTH/IXTM 6 N80 800 V IXTH/IXTM 6 N80A 800 V ID25 6A 6A RDS on 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 800 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 800 V VGS


    Original     		O-204 O-247 O-247 6N80A O-204AA 6N80 6N80A JM24A JM-24 N80A JM-24A PDF

    Untitled

    Abstract: No abstract text available
    Text: FQP3N80C / FQPF3N80C N-Channel QFET MOSFET 800 V, 3.0 A, 4.8 mΩ Features Description • 3.0 A, 800 V, RDS on = 4.8 Ω (Max.) @ VGS = 10 V, ID = 1.5 A This N-Channel enhancement mode power MOSFET is • Low Gate Charge (Typ. 13 nC) planar stripe and DMOS technology. This advanced


    Original     		FQP3N80C FQPF3N80C PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4124 High Linearity Quad MOSFET Mixer for GSM 800 & Cellular BTS Product Description The PE4124 is a high linearity, passive Quad MOSFET Mixer for GSM 800 & Cellular Base Station Receivers and exhibits high dynamic range performance over a broad LO drive range


    Original     		PE4124 PE4124 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4125 High Linearity Quad MOSFET Mixer for GSM 800 & Cellular BTS Product Description The PE4125 is a high linearity, passive Quad MOSFET Mixer for GSM 800 & Cellular Base Station Receivers and exhibits high dynamic range performance over a broad LO drive range


    Original     		PE4125 PE4125 PDF

    Untitled

    Abstract: No abstract text available
    Text: STP8NK80Z - STP8NK80ZFP STW8NK80Z N-channel 800V - 1.3Ω - 6.2A - TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on ID STP8NK80Z 800 V < 1.5 Ω 6.2 A STP8NK80ZFP 800 V < 1.5 Ω 6.2 A STW8NK80Z 800 V < 1.5 Ω 6.2 A


    Original     		STP8NK80Z STP8NK80ZFP STW8NK80Z O-220 /TO-220FP/TO-247 STP8NK80Z O-220FP O-220 PDF

    AN569

    Abstract: MTW7N80E
    Text: MTW7N80E Preferred Device Power MOSFET 7 Amps, 800 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is


    Original     		MTW7N80E O-247 r14525 MTW7N80E/D AN569 MTW7N80E PDF