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    MOSFET 700V 2A Search Results

    MOSFET 700V 2A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 700V 2A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HY2N70T / HY2N70FT 700V / 2A N-Channel Enhancement Mode MOSFET 700V, RDS ON =6.5W@VGS=10V, ID=1A Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current


    Original     		PDF HY2N70T HY2N70FT O-220AB ITO-220AB 2002/95/EC O-220AB ITO-220AB MIL-STD-750 HY2N70T 2N70T

    4N70F

    Abstract: No abstract text available
    Text: HY4N70T / HY4N70FT 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS ON =2.8W@VGS=10V, ID=2A Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current


    Original     		PDF HY4N70T HY4N70FT O-220AB ITO-220AB 2002/95/EC O-220AB ITO-220AB MIL-STD-750 HY4N70T 4N70T 4N70F

    Untitled

    Abstract: No abstract text available
    Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY2N70D / HY2N70M 700V / 2A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=6.5W@VGS=10V, ID=1A


    Original     		PDF HY2N70D HY2N70M O-252 O-251 2002/95/EC O-252 O-251 250mA 125oC -55oC

    Untitled

    Abstract: No abstract text available
    Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY4N70D / HY4N70M 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=2.8W@VGS=10V, ID=2A


    Original     		PDF HY4N70D HY4N70M O-252 O-251 2002/95/EC O-252 O-251 250mA 125oC -55oC

    2N70M

    Abstract: No abstract text available
    Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY2N70D / HY2N70M 700V / 2A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=6.5W@VGS=10V, ID=1A


    Original     		PDF HY2N70D HY2N70M O-252 O-251 2002/95/EC O-252 O-251 250mA 125oC -55oC 2N70M

    Untitled

    Abstract: No abstract text available
    Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY4N70D / HY4N70M 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=2.8W@VGS=10V, ID=2A


    Original     		PDF HY4N70D HY4N70M O-252 O-251 2002/95/EC O-252 O-251 250mA 125oC -55oC

    U2N70

    Abstract: No abstract text available
    Text: PJF2N70 / PJU2N70 700V N-Channel Enhancement Mode MOSFET ITO-220AB/TO-251 FEATURES ITO-220AB • 700V, RDS ON =5.5Ω@VGS=10V, ID=2A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS


    Original     		PDF PJF2N70 PJU2N70 ITO-220AB/TO-251 ITO-220AB 2002/95/EC O-251 O-220AB O-251 MIL-STD-750 PJF2N70 U2N70

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N70ZL Power MOSFET 2A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N70ZL is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.


    Original     		PDF 2N70ZL 2N70ZL QW-R502-765

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N70Z Power MOSFET 2A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N70Z is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.


    Original     		PDF 2N70Z 2N70Z QW-R502-766

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N70K-MT Power MOSFET 2A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N70K-MT is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche


    Original     		PDF 2N70K-MT 2N70K-MT 2N70Kat QW-R205-008

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N70-CB Power MOSFET 2A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N70-CB is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This


    Original     		PDF 2N70-CB 2N70-CB 2N70L-Tat QW-R209-072

    Untitled

    Abstract: No abstract text available
    Text: AOD2N60A/AOI2N60A/AOU2N60A 600V,2A N-Channel MOSFET General Description Product Summary • Advanced High Voltage MOSFET technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V ID (at VGS=10V)


    Original     		PDF AOD2N60A/AOI2N60A/AOU2N60A O-251 O251A AOD2N60A AOU2N60A AOI2N60A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-C Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged


    Original     		PDF 4N70-C 4N70-C 4N70L-TFat QW-R502-A89

    SVD2N70

    Abstract: No abstract text available
    Text: SVD2N70M/SVD2N70F 2A, 700V N-Channel MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored


    Original     		PDF SVD2N70M/SVD2N70F O-251-3L 30TYP O-220F-3L SVD2N70

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7NM70 Preliminary Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7NM70 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		PDF 7NM70 7NM70 QW-R205-047

    POWER MOSFET 4600

    Abstract: 1A 700V MOSFET
    Text: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM2N70 O-220 O-251 O-252 TSM2N70 POWER MOSFET 4600 1A 700V MOSFET

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET I j FS2UM-14A ! HIGH-SPEED SWITCHING USE FS2UM-14A • VDSS . -700V • rDS ON (MAX) . 9.75Í2 • I D . 2A


    OCR Scan     		PDF FS2UM-14A -700V

    FS5KM-14A

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS5KM-14A HIGH-SPEED SWITCHING USE FS5KM-14A OUTLINE DRAWING Dimensions in mm 10 ± 0 . 3 • VDSS . 700V .2.6Q


    OCR Scan     		PDF FS5KM-14A O-220FN FS5KM-14A

    1A 700V MOSFET

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS2KM-14A HIGH-SPEED SWITCHING USE FS2KM-14A • Voss OUTLINE DRAWING . Dimensions in mm 700V • rDS ON (MAX) . 9 .7 5 Q


    OCR Scan     		PDF FS2KM-14A O-220FN 1A 700V MOSFET

    FS5KM14A

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS5KM-14A HIGH-SPEED SWITCHING USE FS5KM-14A OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 V d s s . 700V rDS ON (MAX) . 2.6Í1


    OCR Scan     		PDF FS5KM-14A O-220FN 57KH23 FS5KM14A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS2UM-14A HIGH-SPEED SWITCHING USE FS2UM-14A OUTLINE DRAWING Dimensions in mm 4.5 1.3 LU U LU qwe 0 ' q w e r q O- ' V dss . . 700V . 9.75Í1


    OCR Scan     		PDF FS2UM-14A O-220

    n channel 700V

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS5SM-14A HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 3.2 hf 5.45 5.45 jbd i 0.6 bdl Qi V d s s . 700V rDS ON (MAX) . 2.6Í1


    OCR Scan     		PDF FS5SM-14A 71Q-123 n channel 700V

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS2KM-14A HIGH-SPEED SWITCHING USE FS2KM-14A OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2 .8 ± 0 . 2 V d s s . 700V rDS ON (MAX) . 9.75Í1


    OCR Scan     		PDF FS2KM-14A O-220FN

    FS2VS-14A mosfet

    Abstract: FS2VS-14A
    Text: MITSUBISHI Neh POWER MOSFET FS2VS-14A HIGH-SPEED SWITCHING USE FS2VS-14A OUTLINE DRAWING L q Dimensions in mm J w e •V o +i CD O w r ' V dss . . 700V ' rDS ON (MAX) .9.75Q ' I d . .2A oi q w e


    OCR Scan     		PDF FS2VS-14A O-22QS FS2VS-14A mosfet