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    MOSFET 700V 10A Search Results

    MOSFET 700V 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 700V 10A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N70K Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N70K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.


    Original     		PDF 10N70K 10N70K 10N70KL-TF1-T 10N70KG-TF1-T O-220F1 QW-R502-A69

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N70Z Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N70Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		PDF 10N70Z 10N70Z QW-R502-935

    8n70

    Abstract: PIN DIODE DRIVER CIRCUITS MOSFET 700V 10A 700v 4A mosfet 8N70L-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N70 Power MOSFET 8A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N70 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with minimum on-state resistance, superior switching performance and withstand


    Original     		PDF O-220 O-220F 8N70L-TA3-T 8N70G-TA3-T 8N70L-TF3-T 8N70G-TF3-T QW-R502-711 8n70 PIN DIODE DRIVER CIRCUITS MOSFET 700V 10A 700v 4A mosfet

    10N70

    Abstract: MOSFET 700V 10A 10N70L mosfet 350v 10A 700v 10A mosfet 10N70L-TF1-T 700V mosfet driver
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N70 Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		PDF 10N70 10N70 O-220F O-220F1 QW-R502-572 MOSFET 700V 10A 10N70L mosfet 350v 10A 700v 10A mosfet 10N70L-TF1-T 700V mosfet driver

    700v 4A mosfet

    Abstract: IDM32
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N70 Power MOSFET 8A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N70 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with minimum on-state resistance, superior switching performance and withstand


    Original     		PDF O-220 O-220F 8N70L-TA3-T 8N70G-TA3-T 8N70L-TF3-T 8N70G-TF3-T QW-R502-711 700v 4A mosfet IDM32

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N70-C Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N70-C is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		PDF 10N70-C 10N70-C 10N70L-TF3-Tat QW-R502-A80

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N70 Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		PDF 10N70 10N70 O-220F O-220F1 QW-R502-572

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N70 Preliminary Power MOSFET 8A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N70 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with minimum on-state resistance, superior switching performance and withstand


    Original     		PDF 112nC) 8N70L-TA3-T 8N70G-TA3-T 8N70L-TF1-T 8N70G-TF1-T 8N70L-TF3-T 8N70G-TF3-T QW-R502-711

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 10N70Z-Q Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N70Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		PDF 10N70Z-Q 10N70Z-Q 10N70ZL-TF1-T 10N70ZG-TF1-T QW-R502-B20

    Untitled

    Abstract: No abstract text available
    Text: 10N70 UNISONIC TECHNOLOGIES CO., LTD Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET 1  DESCRIPTION TO-220F The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		PDF 10N70 O-220F 10N70 O-220F1 QW-R502-572

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N70-Q Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET 1  DESCRIPTION TO-220F The UTC 10N70-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		PDF 10N70-Q O-220F 10N70-Q O-220F1 QW-R502-967.

    8n70

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N70 Preliminary Power MOSFET 8A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N70 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with minimum on-state resistance, superior switching performance and withstand


    Original     		PDF 8N70L-TA3-T 8N70G-TA3-T 8N70L-TF3-T 8N70G-TF3-T O-220 O-220F QW-R502-711, 8n70

    10N65

    Abstract: MOSFET 700V 10A MTN10N65FP mtn10n65
    Text: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN10N65FP Spec. No. : C725FP Issued Date : 2009.06.15 Revised Date : Page No. : 1/9 BVDSS : 700V @Tj=150℃ RDS ON : 0.75Ω ID : 10A Description The MTN10N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best


    Original     		PDF MTN10N65FP C725FP MTN10N65FP O-220FP UL94V-0 10N65 MOSFET 700V 10A mtn10n65

    diode b10

    Abstract: MOSFET 700V 10A TSM8N70 700v 4A mosfet 700v 10A mosfet MOSFET 700V 4A
    Text: TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 700 0.9 @ VGS =10V 4.6 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM8N70 ITO-220 TSM8N70 TSM8N70CI 50pcs diode b10 MOSFET 700V 10A 700v 4A mosfet 700v 10A mosfet MOSFET 700V 4A

    Untitled

    Abstract: No abstract text available
    Text: TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)( )(max) ID (A) 700 0.9 @ VGS =10V 8 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM8N70 ITO-220 TSM8N70 TSM8N70CI 50pcs

    N-Channel

    Abstract: MOSFET 700V 10A 700v 4A mosfet 700v 10A mosfet
    Text: TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω)(max) ID (A) 700 0.9 @ VGS =10V 8 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM8N70 ITO-220 TSM8N70 TSM8N70CI 50pcs N-Channel MOSFET 700V 10A 700v 4A mosfet 700v 10A mosfet

    Untitled

    Abstract: No abstract text available
    Text: AOT10T60P/AOB10T60P/AOTF10T60P 600V,10A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM


    Original     		PDF AOT10T60P/AOB10T60P/AOTF10T60P O-220 O-263 O-220F AOT10T60P AOB10T60P AOTF10T60P AOT10T60PL

    Untitled

    Abstract: No abstract text available
    Text: AOW10T60P/AOWF10T60P 600V,10A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM 40A RDS(ON),max


    Original     		PDF AOW10T60P/AOWF10T60P O-262F O-262 AOW10T60P AOWF10T60P

    SMK0870

    Abstract: marking code 8A SMK0870F SMK-0 smk087 32nC
    Text: SMK0870F Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=700V Min. • Low Crss : Crss=13.7pF(Typ.) • Low gate charge : Qg=32nc(Typ.) • Low RDS(on) :RDS(on)=0.9Ω(Max.) Ordering Information Type NO.


    Original     		PDF SMK0870F SMK0870F SMK0870 O-220F-3L KSD-T0O035-000 marking code 8A SMK-0 smk087 32nC

    p channel mosfet 10a 20v

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET j FS10SM-14A ! HIGH-SPEED SWITCHING USE FS10SM-14A • VOSS . 700V • ros O N (M A X ) . 1.3Q • Id . 10A


    OCR Scan     		PDF FS10SM-14A p channel mosfet 10a 20v

    PN channel MOSFET 10A

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OVS-14A HIGH-SPEED SWITCHING USE FS1 OVS-14A OUTLINE DRAWING I q J w e Q w r o- V d s s . 700V Id . 10A


    OCR Scan     		PDF FS1OVS-14A OVS-14A O-22QS 57KH23 PN channel MOSFET 10A

    n channel 700V

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS5SM-14A HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 3.2 hf 5.45 5.45 jbd i 0.6 bdl Qi V d s s . 700V rDS ON (MAX) . 2.6Í1


    OCR Scan     		PDF FS5SM-14A 71Q-123 n channel 700V

    FS10KM-14A

    Abstract: FS10KM14A 5A 700V MOSFET 700v 5A mosfet
    Text: MITSUBISHI Neh POWER MOSFET F S 1 0 K M - 1 4 A HIGH-SPEED SWITCHING USE FS10KM-14A OUTLINE DRAW ING Dimensions in mm 10 ±0.3 2.8 ±0.2 V d s s . 700V rDS ON (MAX) .1.3Í1


    OCR Scan     		PDF FS10KM-14A O-22QFN 571Q-123 FS10KM-14A FS10KM14A 5A 700V MOSFET 700v 5A mosfet

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS10UM-14A HIGH-SPEED SWITCHING USE FS10UM-14A OUTLINE DRAWING Dimensions in mm 4 .5 , . 1 .3 T < l! • VOSS . 700V • r o s O N (M A X ) I GATE DRAIN 3 SOURCE


    OCR Scan     		PDF FS10UM-14A O-220