9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET 6A, 800V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 6NM80 is an Super Junction MOSFET Structure . It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state
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6NM80
6NM80
6NM80L-Tat
QW-R209-070
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 6N40K-TA Power MOSFET 6A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N40K-TA is an N-Channel enhancement mode power MOSFET using UTC’s perfect planar stripe, DMOS technology to provide customers with superior switching
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6N40K-TA
6N40K-TA
QW-R205-052
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SSM3K333R
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary SSM3K333R Power MOSFET 6A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UTC SSM3K333R is an N-channel power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.
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SSM3K333R
SSM3K333R
OT-23
SSM3K333RL-AE3-R
SSM3K333RG-AE3-R
QW-R502-736
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6n40
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N40 Preliminary Power MOSFET 6A, 400V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 6N40 is an N-Channel enhancement mode power MOSFET using UTC’s perfect planar stripe, DMOS technology to provide customers with superior switching performance and
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O-252
O-220
O-220F
QW-R502-487
6n40
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N40 Preliminary Power MOSFET 6A, 400V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 6N40 is an N-Channel enhancement mode power MOSFET using UTC’s perfect planar stripe, DMOS technology to provide customers with superior switching performance and
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O-252
O-220
O-220F
QW-R502-487
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET 6A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6NM80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a
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6NM80
6NM80
QW-R209-070
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N65K-MT Power MOSFET 6A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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6N65K-MT
6N65K-MT
QW-R502-A95
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TC4420
Abstract: TC4429 TC4429COA "MOSFET Drivers" TC429 TC4420CAT TC4420COA TC4420CPA TC4420EOA TC4420EPA
Text: 6A HIGH-SPEED MOSFET DRIVERS TC4420 TC4420 TC4429 TC4429 6A HIGH-SPEED MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • The TC4420/4429 are 6A peak , single output MOSFET drivers. The TC4429 is an inverting driver (pin-compatible with the TC429), while the TC4420 is a non-inverting driver.
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TC4420
TC4429
TC4420/4429
TC4429
TC429)
TC4420
TC4429COA
"MOSFET Drivers"
TC429
TC4420CAT
TC4420COA
TC4420CPA
TC4420EOA
TC4420EPA
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTC606P-H Power MOSFET -6A, -12V, P-CHANNEL 1.8V TRENCH MOSFET DESCRIPTION The UTC UTC606P-H is a P-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance and high switching speed.
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UTC606P-H
UTC606P-H
OT-26
QW-R502-B34
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TC4420
Abstract: TC429 TC4420CAT TC4420COA TC4420CPA TC4420EOA TC4420EPA TC4420IJA TC4429
Text: 6A HIGH-SPEED MOSFET DRIVERS TC4420 TC4420 TC4429 TC4429 6A HIGH-SPEED MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • The TC4420/4429 are 6A peak , single output MOSFET drivers. The TC4429 is an inverting driver (pin-compatible with the TC429), while the TC4420 is a non-inverting driver.
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TC4420
TC4429
TC4420/4429
TC4429
TC429)
TC4420
TC429
TC4420CAT
TC4420COA
TC4420CPA
TC4420EOA
TC4420EPA
TC4420IJA
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"Solenoid Driver"
Abstract: MOSFET 6A MOSFET DRIVERS MIC44F18 DRIVERS high-speed power MOSFET MIC44F20 "MOSFET Drivers" MIC44F19 POWER MOSFET Rise Time
Text: Driving To New Frontiers. Micrel's Ultra High-Speed MOSFET Drivers 6A, 10ns Rise/Fall Times, Ultra High-Speed MOSFET Drivers THE MIC44F18, MIC44F19 and MIC44F20 are high-speed MOSFET drivers capable of sinking and sourcing 6A for driving capacitive loads. With delay times of less than 15ns and rise
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MIC44F18,
MIC44F19
MIC44F20
1000pf
com/ad/mic44f18
500ma
"Solenoid Driver"
MOSFET 6A
MOSFET DRIVERS
MIC44F18
DRIVERS high-speed power MOSFET
"MOSFET Drivers"
POWER MOSFET Rise Time
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6n50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N50 Preliminary Power MOSFET 6A, 500V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 6N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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O-220
O-220F
QW-R502-526
6n50
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF6N15Z Power MOSFET 6A, 150V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC UF6N15Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching
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UF6N15Z
UF6N15Z
OT-223
UF6N15ZL-AA3-R
UF6N15ZG-AA3-R
UF6N15L-AA3-R
QW-R502-759
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF6N15 Preliminary Power MOSFET 6A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF6N15 is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching
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UF6N15
UF6N15
UF6N15L-AA3-R
UF6N15G-AA3-R
OT-223
QW-R502-759
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4422 MOSFET
Abstract: 4425 mosfet mosfet 4468 4427 mosfet 4422 dual mosfet mosfet 4425 mosfet 4427 MOSFET DRIVER 4468 mosfet mosfet 751
Text: Section 7 MOSFET Drivers Section Contents MOSFET Driver Selection G u id e .5-2 MIC4416/4417 IttyBitty Low-Side MOSFET Driver. 7-5
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MIC4416/4417
MIC4420/4429
MIC4421/4422
MIC4423/4424/4425
MIC4426/4427/4428
MIC4451/4452
M1C5010
MIC5014-Family
4422 MOSFET
4425 mosfet
mosfet 4468
4427 mosfet
4422 dual mosfet
mosfet 4425
mosfet 4427
MOSFET DRIVER
4468 mosfet
mosfet 751
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4422 mosfet
Abstract: MOSFET 4420 Matching MOSFET Drivers to MOSFETs parallel mosfet 4469 mosfet use of zener diode 4420 mosfet mosfet 4468 4422 dual mosfet irf4501
Text: APPLICATION NOTE 30 MATCHING MOSFET DRIVERS TO MOSFETs MATCHING MOSFET DRIVERS TO MOSFETs AN-30 INTRODUCTION V TelCom offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/MOSFET to the application.
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AN-30
TC4424
4422 mosfet
MOSFET 4420
Matching MOSFET Drivers to MOSFETs
parallel mosfet
4469 mosfet
use of zener diode
4420 mosfet
mosfet 4468
4422 dual mosfet
irf4501
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high-speed power mosfet 2Mhz
Abstract: TL494 tl494 mosfet SG1524 application note tl494 24v power switch tl494 tl494 application notes TC429CPA TC429 data sheet tl494
Text: 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER TC429 TC429 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC429 is a high-speed, single CMOS-level translator and driver. Designed specifically to drive highly capacitive power MOSFET gates, the TC429 features 2.5Ω output
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TC429
TC429
2500pF
25nsec.
60nsec.
high-speed power mosfet 2Mhz
TL494
tl494 mosfet
SG1524 application note
tl494 24v
power switch tl494
tl494 application notes
TC429CPA
data sheet tl494
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4420CPA
Abstract: IC TC 4420 4420 mosfet soic 4420COA C 5344
Text: T Semiconductor, Inc. TC4420 TC4429 6A HIGH-SPEED MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • The TC4420/4429 are 6A peak , single output MOSFET drivers. The TC4429 is an inverting driver (pin-compatible
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TC4420
TC4429
25nsec
000pF
55nsec
TC4420
4420CPA
IC TC 4420
4420 mosfet soic
4420COA
C 5344
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IRF450 application
Abstract: Matching MOSFET Drivers to MOSFETs IRF450A mosfet IRF450 TC4420 die TC4420-29 TC4431 application matching mosfet TC170 TC426
Text: AN30 Matching MOSFET Drivers to MOSFETs INTRODUCTION V+ Microchip offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/ MOSFET to the application. MOSFET DIE SIZES TC4424 Input Unlike bipolar transistors in which die size is primarily a function of
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TC4424
DS00799A
IRF450 application
Matching MOSFET Drivers to MOSFETs
IRF450A
mosfet IRF450
TC4420 die
TC4420-29
TC4431 application
matching mosfet
TC170
TC426
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AN799 Matching MOSFET Drivers to MOSFETs
Abstract: an799 an799 microchip IRF450A TC4424 motor driver Matching MOSFET Drivers to MOSFETs TC4431 application TC4420 die MOSFET TEST SIMPLE Procedures TC4424
Text: AN799 Matching MOSFET Drivers to MOSFETs INTRODUCTION V+ Microchip offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/ MOSFET to the application. TC4424 MOSFET DIE SIZES Unlike bipolar transistors in which die size is primarily a function of
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AN799
TC4424
D-81739
DS00799A*
DS00799A-page
AN799 Matching MOSFET Drivers to MOSFETs
an799
an799 microchip
IRF450A
TC4424 motor driver
Matching MOSFET Drivers to MOSFETs
TC4431 application
TC4420 die
MOSFET TEST SIMPLE Procedures
TC4424
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Untitled
Abstract: No abstract text available
Text: MIC4420/4429/429 6A-Peak Low-Side MOSFET Driver ' ' ' - — - Bipolar/CMOS/DMOS Process General Description Features MIC4420, MIC4429 and MIC429 MOSFET drivers are tough, efficient, and easy to use. The MIC4429 and MIC429
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OCR Scan
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MIC4420/4429/429
MIC4420,
MIC4429
MIC429
MIC429
MIC4420
500mA
44-Pin
10-Pin
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Untitled
Abstract: No abstract text available
Text: FDD6N25 N-Channel UniFETTM MOSFET 200 V, 4.4 A, 1.1 Ω Features Description • RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 2.2 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDD6N25
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Untitled
Abstract: No abstract text available
Text: FDU6N25 N-Channel UniFETTM MOSFET 250 V, 4.4 A, 1.1 Ω Features Description • RDS on = 0.9 Ω (Typ.) @ VGS = 10 V, ID = 2.2 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDU6N25
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