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    MOSFET 618 Search Results

    MOSFET 618 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 618 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    alc 885

    Abstract: "RF MOSFETs" 1N5925A AN211A AN721 MRF173 VK200
    Text: Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz


    Original     		PDF MRF173/D MRF173 alc 885 "RF MOSFETs" 1N5925A AN211A AN721 MRF173 VK200

    FSR510

    Abstract: 19v 4.74A package marking 220-6L 19V DC 90w 90w flyback 12V ENERGY LIGHT CIRCUIT DIAGRAM simple 12v to 19v converter FAN6300 JESD22-A114 FSR510R09GZ
    Text: FSR510 Highly Integrated Synchronous Rectification Combination Controller for Quasi-Resonant PWM Controller Features Description ƒ Highly Integrated Synchronous Rectification SR Combination Controller, Combining MOSFET and SR Controller ƒ ƒ Built-In Ultra-Low RDS-ON MOSFET


    Original     		PDF FSR510 FSR510 19v 4.74A package marking 220-6L 19V DC 90w 90w flyback 12V ENERGY LIGHT CIRCUIT DIAGRAM simple 12v to 19v converter FAN6300 JESD22-A114 FSR510R09GZ

    FSR510

    Abstract: 19v 4.74A 90w flyback 19V DC 90w 12V ENERGY LIGHT CIRCUIT DIAGRAM LPC TPM package marking 220-6L simple 12v to 19v converter FAN6300 JESD22-A114
    Text: FSR510 Highly Integrated Synchronous Rectification Combination Controller for Quasi-Resonant PWM Controller Features Description ƒ Highly Integrated Synchronous Rectification SR Combination Controller, Combining MOSFET and SR Controller ƒ ƒ Built-In Ultra-Low RDS-ON MOSFET


    Original     		PDF FSR510 FSR510 19v 4.74A 90w flyback 19V DC 90w 12V ENERGY LIGHT CIRCUIT DIAGRAM LPC TPM package marking 220-6L simple 12v to 19v converter FAN6300 JESD22-A114

    AN749

    Abstract: mrf154 amplifier Fair-Rite bead MC1723 MRF154 1N4148 1N5362
    Text: Order this document by MRF154/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range.


    Original     		PDF MRF154/D MRF154 AN749 mrf154 amplifier Fair-Rite bead MC1723 MRF154 1N4148 1N5362

    QSC60xx

    Abstract: QUALCOMM QFN QFN22 NUS6189MNTWG qsc60 QUALCOMM Reference design Drive Base BJT QFN-22
    Text: NUS6189MN Low Profile Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining an overvoltage protection circuit OVP with a 30 V P−channel power MOSFET, a low VCE(SAT) transistor, and low


    Original     		PDF NUS6189MN NUS6189MN/D QSC60xx QUALCOMM QFN QFN22 NUS6189MNTWG qsc60 QUALCOMM Reference design Drive Base BJT QFN-22

    RCA 618

    Abstract: marking 618
    Text: FDN5618P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –1.25 A, –60 V. RDS ON = 0.200 Ω @ VGS = –10 V


    Original     		PDF FDN5618P RCA 618 marking 618

    hf class AB power amplifier mosfet

    Abstract: Triode 805 motorola diode 8296 1N5925A AN211A AN215A AN721 MRF136 J973
    Text: Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.


    Original     		PDF MRF136/D MRF136 hf class AB power amplifier mosfet Triode 805 motorola diode 8296 1N5925A AN211A AN215A AN721 MRF136 J973

    Mosfet J49

    Abstract: MRF171 MRF171A VK200 ADC 0824
    Text: Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF171A N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz


    Original     		PDF MRF171A/D MRF171A Mosfet J49 MRF171 MRF171A VK200 ADC 0824

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 PMV65XPE 20 V, P-channel Trench MOSFET 25 April 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMV65XPE O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 PMV65XPEA 20 V, P-channel Trench MOSFET 27 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMV65XPEA O-236AB) AEC-Q101

    MRF160

    Abstract: VK200
    Text: Order this document by MRF160/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF160 N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Guaranteed 28 Volt, 500 MHz Performance


    Original     		PDF MRF160/D MRF160 MRF160 VK200

    fdn5618p

    Abstract: No abstract text available
    Text: FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –1.25 A, –60 V. RDS ON = 0.170 Ω @ VGS = –10 V


    Original     		PDF FDN5618P fdn5618p

    FDN5618P

    Abstract: No abstract text available
    Text: FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –1.25 A, –60 V. RDS ON = 0.170 Ω @ VGS = –10 V


    Original     		PDF FDN5618P FDN5618P

    FDN5618P

    Abstract: No abstract text available
    Text: FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –1.25 A, –60 V. RDS ON = 0.170 Ω @ VGS = –10 V


    Original     		PDF FDN5618P FDN5618P

    2955E

    Abstract: TD 1409
    Text: MMFT2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time.


    Original     		PDF MMFT2955E 2955E TD 1409

    MRF151G hf amplifier

    Abstract: MRF151G MRF151G Voltage min-max ferrite 1 phase transformer 0.14 ratio 120 watt G10 zener diode mrf151g 300 TOROIDS Design Considerations AN211A rf amplifier circuit mrf151g
    Text: Order this document by MRF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF151G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    Original     		PDF MRF151G/D MRF151G MRF151G hf amplifier MRF151G MRF151G Voltage min-max ferrite 1 phase transformer 0.14 ratio 120 watt G10 zener diode mrf151g 300 TOROIDS Design Considerations AN211A rf amplifier circuit mrf151g

    ZVN4306A TO-5

    Abstract: ZTX618 power supply IRF830 APPLICATION mosfet driver with npn transistor high gain PNP POWER TRANSISTOR SOT23 npn high voltage transistor 500v sot23 zvn4306 AN18 irf830 datasheet pnp 500v
    Text: Application Note 18 Issue 1 March 1996 Power MOSFET Gate Driver Circuits using High Current Super-β Transistors 6A Pulse Rated SOT23 Transistors for High Frequency MOSFET Interfacing Neil Chadderton The pow er M OS F ET is c omm only presented and regarded as a voltage


    Original     		PDF 100mA/div. 50ns/div. x15mm FMMT618/718 700mW. 500mA/div. 100ns/div. ZVN4306A TO-5 ZTX618 power supply IRF830 APPLICATION mosfet driver with npn transistor high gain PNP POWER TRANSISTOR SOT23 npn high voltage transistor 500v sot23 zvn4306 AN18 irf830 datasheet pnp 500v

    Untitled

    Abstract: No abstract text available
    Text: RCD050N20 Data Sheet 10V Drive Nch MOSFET RCD050N20  Structure Silicon N-channel MOSFET  Dimensions Unit : mm CPT3 6.5 5.1 2.3 0.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple.


    Original     		PDF RCD050N20 SC-63) OT-428> R1120A

    mrf166w application note

    Abstract: MRF166W
    Text: Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics


    Original     		PDF MRF166W/D MRF166W mrf166w application note MRF166W

    "RF MOSFETs"

    Abstract: AN211A motorola diode 8296 AN721 1N5925A MRF173CQ VK200
    Text: Order this document by MRF173CQ/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF173CQ N–Channel Enhancement Mode MOSFET Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of


    Original     		PDF MRF173CQ/D MRF173CQ "RF MOSFETs" AN211A motorola diode 8296 AN721 1N5925A MRF173CQ VK200

    planar transformer theory

    Abstract: TH D560 AN721 18006-1-Q1 AN215A mosfet HF amplifier motorola diode 8296 1N4740 319B AN211A
    Text: Order this document by MRF136Y/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF136Y N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.


    Original     		PDF MRF136Y/D MRF136Y planar transformer theory TH D560 AN721 18006-1-Q1 AN215A mosfet HF amplifier motorola diode 8296 1N4740 319B AN211A

    MRF141G

    Abstract: u 172 954 zener AN211A
    Text: Order this document by MRF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    Original     		PDF MRF141G/D MRF141G MRF141G u 172 954 zener AN211A

    d3n06

    Abstract: MMDF3N06HDR2
    Text: MMDF3N06HD Preferred Device Advance Information Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature low RDS on and true logic level performance. Dual MOSFET devices are designed for use in low voltage, high speed switching applications where power


    Original     		PDF MMDF3N06HD r14525 MMDF3N06HD/D d3n06 MMDF3N06HDR2

    c617 DIODE

    Abstract: No abstract text available
    Text: PD - 9.1258C International I R Rectifier IRLML2803 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • N-Channel MOSFET • SOT-23 Footprint • Low Profile <1.1 mm • Available in Tape and Reel • Fast Switching V dss =


    OCR Scan     		PDF OT-23 1258C IRLML2803 c617 DIODE