b9nk60zd
Abstract: p9nk60z N-Channel mosfet 600v 7A P9NK60ZD zener diode 3.0 b2 p9nk MOSFET IGSS 100A zener 600v zener diode 15v st 220 f1
Text: STB9NK60ZD STF9NK60ZD - STP9NK60ZD N-channel 600V - 0.85Ω - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMesh Power MOSFET General features Type VDSS RDS on ID Pw STB9NK60ZD 600V <0.95Ω 7A 125W STF9NK60ZD 600V <0.95Ω 7A 30W STP9NK60ZD 600V <0.95Ω 7A 125W
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STB9NK60ZD
STF9NK60ZD
STP9NK60ZD
D2PAK/TO-220FP/TO-220
STF9NK60ZD
O-220FP
O-220
b9nk60zd
p9nk60z
N-Channel mosfet 600v 7A
P9NK60ZD
zener diode 3.0 b2
p9nk
MOSFET IGSS 100A
zener 600v
zener diode 15v
st 220 f1
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p9nk60zfdfp
Abstract: p9nk60zfd p9nk60z STB9NK60ZFD STB9NK60ZFDT4 STP9NK60ZFD STP9NK60ZFDFP p9nk60
Text: STP9NK60ZFD - STP9NK60ZFDFP STB9NK60ZFD N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET TARGET DATA TYPE VDSS RDS on ID Pw STP9NK60ZFD STP9NK60ZFDFP STB9NK60ZFD 600 V 600 V 600 V < 0.95 Ω < 0.95 Ω < 0.95 Ω 7A 7A 7A
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STP9NK60ZFD
STP9NK60ZFDFP
STB9NK60ZFD
O-220/TO-220FP/D2PAK
STP9NK60ZFD
p9nk60zfdfp
p9nk60zfd
p9nk60z
STB9NK60ZFD
STB9NK60ZFDT4
STP9NK60ZFDFP
p9nk60
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P8NM60N
Abstract: F8NM60N STD8NM60 STP8NM60N
Text: STD8NM60N - STD8NM60N-1 STF8NM60N - STP8NM60N N-channel 600V - 0.56Ω - 7A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 2 1 3 STD8NM60N 650V <0.65Ω 7A STD8NM60N-1 650V <0.65Ω 7A STF8NM60N
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STD8NM60N
STD8NM60N-1
STF8NM60N
STP8NM60N
O-220
O-220FP
STP8NM60N
P8NM60N
F8NM60N
STD8NM60
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching
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7N60A
7N60A
VQW-R502-111
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching
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7N60A
7N60A
VQW-R502-111
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7A600V
Abstract: DB-186 195mH
Text: TAK CHEONG N-Channel Power MOSFET 7A, 600V, 1.2Ω 1 = Gate 2 = Drain 3 = Source GENERAL DESCRIPTION The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced
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O-220AB
DB-100
7A600V
DB-186
195mH
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Untitled
Abstract: No abstract text available
Text: TAK CHEONG N-Channel Power MOSFET 7A, 600V, 1.2Ω GENERAL DESCRIPTION The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state
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O-220FP
DB-100
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mosfet 600V 7A N-CHANNEL
Abstract: DB-199 DB199
Text: TAK CHEONG N-Channel Power MOSFET 7A, 600V, 1.2Ω 1 = Gate 2 = Drain 3 = Source 1 GENERAL DESCRIPTION 2 The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced
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O-220FP
DB-100
mosfet 600V 7A N-CHANNEL
DB-199
DB199
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STP8NC60
Abstract: STP8NC60FP
Text: STP8NC60 STP8NC60FP N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP PowerMesh II MOSFET TYPE STP8NC60 STP8NC60FP • ■ ■ ■ ■ VDSS RDS on ID 600 V 600 V < 1.0 Ω < 1.0 Ω 7A 7A TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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STP8NC60
STP8NC60FP
O-220/TO-220FP
O-220
O-220FP
STP8NC60
STP8NC60FP
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STP8NC60
Abstract: STP8NC60FP
Text: STP8NC60 STP8NC60FP N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP PowerMesh II MOSFET TYPE STP8NC60 STP8NC60FP • ■ ■ ■ ■ VDSS RDS on ID 600 V 600 V < 1.0 Ω < 1.0 Ω 7A 7A TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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STP8NC60
STP8NC60FP
O-220/TO-220FP
STP8NC60
STP8NC60FP
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STP8NC60
Abstract: STP8NC60FP S1060
Text: STP8NC60 STP8NC60FP N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP PowerMesh II MOSFET TYPE STP8NC60 STP8NC60FP • ■ ■ ■ ■ VDSS RDS on ID 600 V 600 V < 1.0 Ω < 1.0 Ω 7A 7A TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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STP8NC60
STP8NC60FP
O-220/TO-220FP
O-220
O-220FP
STP8NC60
STP8NC60FP
S1060
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SVD7N60F
Abstract: TO-220F-3L
Text: SVD7N60T/SVD7N60F 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’ s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored
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SVD7N60T/SVD7N60F
SVD7N60T
O-220-3L
50Unit/Totes:
O-220F-3L
SVD7N60F
TO-220F-3L
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AOT7N60
Abstract: mosfet 600V 7A N-CHANNEL AOT12N60 AOTF12N60 AOTF7N60
Text: AOT7N60/AOTF7N60 600V, 7A N-Channel MOSFET General Description Features The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT7N60/AOTF7N60
AOT7N60
AOTF7N60
O-220
O-220F
AOTF7N60
AOT7N60
mosfet 600V 7A N-CHANNEL
AOT12N60
AOTF12N60
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AOTF7N60L
Abstract: AOTF7N60 AOT7N60
Text: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT7N60/AOTF7N60
AOT7N60
AOTF7N60
AOT7N60L
AOTF7N60L
O-220
O-220F
AOTF7N60L
AOT7N60
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Untitled
Abstract: No abstract text available
Text: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT7N60/AOTF7N60
AOT7N60
AOTF7N60
AOT7N60L
AOTF7N60L
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mosfet 600V 7A N-CHANNEL
Abstract: AOT4N60 AOT7N60 AOTF7N60
Text: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT7N60/AOTF7N60
AOT7N60
AOTF7N60
O-220
O-220F
mosfet 600V 7A N-CHANNEL
AOT4N60
AOT7N60
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Untitled
Abstract: No abstract text available
Text: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT7N60/AOTF7N60
AOT7N60
AOTF7N60
AOT7N60L
AOTF7N60L
O-220
O-220F
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Untitled
Abstract: No abstract text available
Text: AOD7N60/AOI7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOD7N60 & AOI7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOD7N60/AOI7N60
AOD7N60
AOI7N60
19ABA
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Untitled
Abstract: No abstract text available
Text: AOD7N60/AOI7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOD7N60 & AOI7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOD7N60/AOI7N60
AOD7N60
AOI7N60
O251A
AOI7N60
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Untitled
Abstract: No abstract text available
Text: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT7N60/AOTF7N60
AOT7N60
AOTF7N60
O-220
O-220F
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F9NK60ZD
Abstract: P9NK60 P9NK60ZD STP9NK60ZD STF9NK60ZD p9nk60z B9NK60Z 150 W HID ballast DIAGRAM STB9NK60ZD
Text: STP9NK60ZD - STF9NK60ZD STB9NK60ZD N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET TYPE STP9NK60ZD STF9NK60ZD STB9NK60ZD • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V 600 V 600 V < 0.95 Ω < 0.95 Ω < 0.95 Ω 7A
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STP9NK60ZD
STF9NK60ZD
STB9NK60ZD
O-220/TO-220FP/D2PAK
O-220
O-220FP
F9NK60ZD
P9NK60
P9NK60ZD
p9nk60z
B9NK60Z
150 W HID ballast DIAGRAM
STB9NK60ZD
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p7n60
Abstract: F7N60 m2828 n60p ga 132
Text: PJP7N60 / PJF7N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 7A , 600V, RDS ON =1.2Ω@VGS=10V, ID=3.5A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJP7N60
PJF7N60
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
p7n60
F7N60
m2828
n60p
ga 132
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N-Channel mosfet 600v 7A
Abstract: mosfet 600V 7A N-CHANNEL BLV7N60
Text: BLV7N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 1.0Ω Ω • Simple Drive Requirements ID 7A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
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BLV7N60
N-Channel mosfet 600v 7A
mosfet 600V 7A N-CHANNEL
BLV7N60
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Untitled
Abstract: No abstract text available
Text: BLV7N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 1.0Ω Ω • Simple Drive Requirements ID 7A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
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BLV7N60
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