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    MOSFET 600V 600A CIRCUIT Search Results

    MOSFET 600V 600A CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 600V 600A CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    N mosfet 250v 600A

    Abstract: No abstract text available
    Text: Ihr Spezialist für Mess- und Prüfgeräte Programmable DC Electronic Load MODEL 63200 SERIES Key Features • Power Rating : 2600W, 5200W, 6500W, 10000W, 10400W, 14500W, 15600W ■ Voltage range : 0 ~ 80V/0 ~ 600V/0 ~ 1000V ■ Current range : Up to 1000A


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    0000W, 0400W, 4500W, 5600W 00V/0 20kHz 63200-E-201408-1000 N mosfet 250v 600A PDF

    P-Channel mosfet 400v to220

    Abstract: IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V
    Text: APEC '99 Trench-Gate Technology for The Next Generation of MOS Power Devices IEEE, APEC Conference 1999 Eric R. Motto Sr. Application Engineer Powerex Inc. Youngwood PA USA APEC '99 Introduction 1. The Trench Gate Structure, Development History and Advantages


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    CM600HA-5F CM450HA-5F CM350DU-5F CM200TU-5F CT60AM-18B P-Channel mosfet 400v to220 IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V PDF

    d41a3

    Abstract: D41A3100
    Text: Pro d i u e G t c u d www.celduc-relais.com celduc MADE IN FRANCE relais 1964-2014 YEARS REED RELAYS AND SWITCHES SOLID STATE RELAYS MAGNETIC SENSORS Dear customers, dear readers, At celduc® we are very proud to be celebrating our 50th anniversary in 2014!


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    GUIDUK2014 d41a3 D41A3100 PDF

    MOSFET circuit welding INVERTER

    Abstract: MOSFET welding INVERTER MOSFET welding INVERTER 200A 600V igbt dc to dc buck converter 600V 30A igbt dc to dc buck converter 200v dc motor igbt dc to ac inverter by scr induction heating 600V igbt dc to dc boost converter SCR Inverter
    Text: TM Global Power-Semiconductor Solution Provider A Quick Reference Guide IGBTs ● MOSFET MODULES ● IPMs ● DIP-IPMs ● ACCESSORIES ● DISCRETE THYRISTORS ● DISCRETE RECTIFIERS ● THYRISTOR AND DIODE MODULES ● FAST RECOVERY AND THREE-PHASE DIODE MODULES


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    PDF

    relais reed celduc

    Abstract: No abstract text available
    Text: Pro d i u e G t c u d www.celduc-relais.com celduc MADE IN FRANCE relais 1964-2014 YEARS REED RELAYS AND SWITCHES SOLID STATE RELAYS MAGNETIC SENSORS Dear customers, dear readers, At celduc® we are very proud to be celebrating our 50th anniversary in 2014!


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    GUIDUK2014 relais reed celduc PDF

    103A

    Abstract: c 103 mosfet
    Text: APTM120UM95F-AlN Single Switch MOSFET Power Module SK S D DK G S D Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance


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    APTM120UM95F-AlN APTM120UM95F 103A c 103 mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: APTM120UM70F-AlN Single switch MOSFET Power Module SK S D DK G S D SK Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance


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    APTM120UM70F-AlN APTM120UM70F PDF

    GTO thyristor 1200V 50A

    Abstract: scr driving circuit for dc motor MOSFET circuit welding INVERTER SCR Gate Drive 200v dc motor MOSFET welding INVERTER MOSFET welding INVERTER 200A igbt for HIGH POWER induction heating 600V igbt dc to dc buck converter SWITCHING WELDING BY MOSFET igbt circuit for induction melting
    Text: POWEREX 2009:Layout 1 12/31/08 9:18 AM Page 2 Power Semiconductor Solutions 2009 Quick Reference Guide ● IGBTs ● MOSFET MODULES ● IPMs ● ● DIPIPM ● ● ● ACCESSORIES ● DISCRETE THYRISTORS ● DISCRETE RECTIFIERS ● THYRISTOR AND DIODE MODULES


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    mosfet 600V 60A

    Abstract: APT60N90JC3
    Text: 900V 60A APT60N90JC3 COOLMOS S S Super Junction MOSFET Power Semiconductors D G • Ultra Low RDS ON S • Low Miller Capacitance • Ultra Low Gate Charge, Qg OT 22 7 "UL Recognized" file # E145592 ISOTOP • Avalanche Energy Rated D • Extreme dv/dt Rated


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    APT60N90JC3 E145592 Conti143) mosfet 600V 60A APT60N90JC3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 900V 36A APT36N90BC3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET TO -24 7 D3 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extremedv/dt Rated • Dual die (parallel)


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    APT36N90BC3G* APT36N90BC3G APT30DF60 O-247Â PDF

    dt600A

    Abstract: No abstract text available
    Text: 900V 36A APT36N90BC3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET TO -24 7 D3 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated • Dual die (parallel)


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    APT36N90BC3G* APT30DF60 O-247® dt600A PDF

    mosfet 600V 60A

    Abstract: No abstract text available
    Text: 900V 60A APT60N90JC3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS S S Super Junction MOSFET Power Semiconductors D G • Ultra Low RDS ON S • Low Miller Capacitance • Ultra Low Gate Charge, Qg OT 22 7 "UL Recognized" file # E145592 ISOTOP


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    APT60N90JC3G* E145592 mosfet 600V 60A PDF

    diode 748 36A

    Abstract: APT36N90BC3G apt30df60
    Text: 900V 36A APT36N90BC3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Super Junction MOSFET Power Semiconductors TO -24 7 D3 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated


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    APT36N90BC3G* APT36N90BC3G diode 748 36A APT36N90BC3G apt30df60 PDF

    Untitled

    Abstract: No abstract text available
    Text: 900V 36A APT36N90BC3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Super Junction MOSFET Power Semiconductors TO -24 7 D3 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated


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    APT36N90BC3G* APT30DF60 O-247® PDF

    APT94N60L2C3G

    Abstract: No abstract text available
    Text: 600V 94A APT94N60L2C3 APT94N60L2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET • Ultra Low RDS ON TO-264 • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Dual die (parallel)


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    APT94N60L2C3 APT94N60L2C3G* O-264 75DQ60 APT30DF60 APT94N60L2C3G PDF

    AN-7528

    Abstract: 50us60s TA49468 mosfet 600V 50A 25A10 an7528
    Text: tm FFH50US60S Features 50A, 600V, Stealth Diode • Stealth Recovery, Trr = 113 ns @ IF = 50 A The FFH50US60S is a Stealth™ diode optimized for low loss performance in output rectification. The Stealth™ family exhibits low reverse recovery current (IRM(REC), low VF and soft


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    FFH50US60S FFH50US60S AN-7528 50us60s TA49468 mosfet 600V 50A 25A10 an7528 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT106N60B2C6 600V 106A 0.035 COOLMOS Super Junction MOSFET Power Semiconductors • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extremedv/dt Rated • Dual die (parallel) G • Popular T-MAX Package


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    APT106N60B2C6 O-247 PDF

    apt60dq60

    Abstract: APT106N60B2C6
    Text: APT106N60B2C6 600V 106A 0.035Ω COOLMOS Super Junction MOSFET Power Semiconductors • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated • Dual die (parallel) G • Popular T-MAX Package


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    APT106N60B2C6 O-247 apt60dq60 APT106N60B2C6 PDF

    TLP250 MOSFET DRIVER application note

    Abstract: TLP250 MOSFET DRIVER calculation of IGBT snubber 74hc06 tlp250 equivalent TLP250 igbt driver applications TLP250 application note difference between IGBT and MOSFET IN inverter SCR 207A scr driver ic for rectifier 3 phase
    Text: CONTENTS POWER DEVICES and IGBT 2 Variation of NIEC’s IGBT Modules 4 Ratings and Characteristics 6 Power Loss and Thermal Design 10 Gate Drive 20 High Side Drive 24 3-Phase Bridge Inverter 26 Short circuit and Over-voltage Protection 30 Snubber 33 Parallel Operation


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    00A/600V 00A/1200V TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER calculation of IGBT snubber 74hc06 tlp250 equivalent TLP250 igbt driver applications TLP250 application note difference between IGBT and MOSFET IN inverter SCR 207A scr driver ic for rectifier 3 phase PDF

    IRGDDN600K06

    Abstract: 30V 600A igbt 600A 500v igbt mosfet 600V 600A circuit INT-A-PAK Package int-a-pak OF IGBT 600A 600V 10 600a - 030 DOUBLE INT-A-PAK Package
    Text: Provisional Data Sheet PD-9.1197 Í^ R e c tifi^ gggjHecmier IRGDDN600K06 ir g r d n 600K06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail"


    OCR Scan
    IRGDDN600K06 IRGRDN600K06 C-1016 MA55455 30V 600A igbt 600A 500v igbt mosfet 600V 600A circuit INT-A-PAK Package int-a-pak OF IGBT 600A 600V 10 600a - 030 DOUBLE INT-A-PAK Package PDF

    DOUBLE INT-A-PAK Package

    Abstract: No abstract text available
    Text: Provisional Data Sheet PD-9.1176 International ^Rectifier IRG DDN600M06 IRG RDN600M06 “SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A .Rugged Design •Simple gate-drive • Switching-Loss Rating includes all “tail"


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    DDN600M06 RDN600M06 Outline13 C-456 DOUBLE INT-A-PAK Package PDF

    IRGDDN600K06

    Abstract: mosfet 600V 600A circuit power mosfet 600v 600A lm 2604 vqe 208 e
    Text: International Provisional Data Sheet PD-9.1197 IRGDDN600K06 1RGRDN600K06 ^R ectifier "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail* losses


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    IRGDDN600K06 1RGRDN600K06 C-1016 mosfet 600V 600A circuit power mosfet 600v 600A lm 2604 vqe 208 e PDF

    semikron snubber

    Abstract: snubber resistance of IGBT semikron IGBT snubber power mosfet 600v 600A IGBT 1200A SKIIPPACK Power MOSFET 150 A mosfet 600V 600A circuit snubber igbt
    Text: SEMIKRPN innovation+ service U tf&i Now SEMIKRON introduces SKiiP SKiiP , a new compact technology for integrated intelligent power. SKiiPPACK® IGBT product range from 600 to 1700V from 150 to 800A sixpack 600V from 150 to 300A sixpack 1200/1700V from 400 to 1200A halfbridge 1200/1700V


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    1200/1700V semikron snubber snubber resistance of IGBT semikron IGBT snubber power mosfet 600v 600A IGBT 1200A SKIIPPACK Power MOSFET 150 A mosfet 600V 600A circuit snubber igbt PDF

    pwm INVERTER welder

    Abstract: arc welder inverter 600V N MOSFET T0-220 flyback arc welder full bridge arc welder Pelly high current IGBT based buck converter HF IGBT welder mosfet SIL-PAD to-247
    Text: D T 94-2 CHOOSING BETWEEN MULTIPLE DISCRETES AND HIGH CURRENT MODULES By Brian R. Introduction Many circuits using HEXFETs or IGBTs operate at current in the range o f tens to hundreds o f amps. IR’s packages that cover


    OCR Scan
    O-247AC O-220AB TQ-220AB, O-247AC, T0-220 O-247 pwm INVERTER welder arc welder inverter 600V N MOSFET T0-220 flyback arc welder full bridge arc welder Pelly high current IGBT based buck converter HF IGBT welder mosfet SIL-PAD to-247 PDF