Untitled
Abstract: No abstract text available
Text: R6076ENZ1 Nch 600V 76A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.042W ID 76A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R6076ENZ1
O-247
R1102A
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IRFSL9N60A
Abstract: No abstract text available
Text: PD - 91814A IRFSL9N60A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l This device is only for through hole application. l VDSS Rds(on) max ID 0.75Ω 9.2A 600V
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1814A
IRFSL9N60A
12-Mar-07
IRFSL9N60A
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IRFSL9N60A
Abstract: No abstract text available
Text: PD - 91814A IRFSL9N60A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l This device is only for through hole application. l VDSS Rds(on) max ID 0.75Ω 9.2A 600V
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1814A
IRFSL9N60A
IRFSL9N60A
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Untitled
Abstract: No abstract text available
Text: PD - 91814A IRFSL9N60A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l This device is only for through hole application. l VDSS Rds(on) max ID 0.75Ω 9.2A 600V
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1814A
IRFSL9N60A
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: APTC60AM83B1G Boost chopper: VDSS = 600V RDSon = 45m max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 7 Phase leg: VDSS = 600V RDSon = 83m max @ Tj = 25°C ID = 36A @ Tc = 25°C 6 CR2 8 Q3 2 1 4 Q2
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APTC60AM83B1G
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Untitled
Abstract: No abstract text available
Text: APTC60AM83B1G Boost chopper: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 7 Phase leg: VDSS = 600V RDSon = 83mΩ max @ Tj = 25°C ID = 36A @ Tc = 25°C 6 CR2 8 Q3 2 CR1 1 4
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APTC60AM83B1G
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Untitled
Abstract: No abstract text available
Text: R6076ENZ1 Nch 600V 76A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.042W ID 76A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R6076ENZ1
O-247
R1102A
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300V dc dc boost converter
Abstract: No abstract text available
Text: APTC60AM83B1G Boost chopper: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 7 Phase leg: VDSS = 600V RDSon = 83mΩ max @ Tj = 25°C ID = 36A @ Tc = 25°C 6 CR2 8 Q3 CR1 2 1 4
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APTC60AM83B1G
case150
300V dc dc boost converter
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ixfh50n60
Abstract: 50n60p IXFT50N60P3 IXFQ50N60P3 ixfh50n60p3 50N60P3 DS100310 N-channel MOSFET to-247 50a 50n60 N-channel MOSFET to-247 50a 600v
Text: Advance Technical Information IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Polar3TM HiperFETTM Power MOSFET VDSS ID25 = 600V = 50A Ω ≤ 145mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ) Symbol
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IXFT50N60P3
IXFQ50N60P3
IXFH50N60P3
O-268
O-247
50N60P3
ixfh50n60
50n60p
ixfh50n60p3
DS100310
N-channel MOSFET to-247 50a
50n60
N-channel MOSFET to-247 50a 600v
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IXFH50N60P3
Abstract: IXFQ50N60P3 50N60P3
Text: IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Polar3TM HiperFETTM Power MOSFET VDSS ID25 = 600V = 50A 160m RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings
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IXFT50N60P3
IXFQ50N60P3
IXFH50N60P3
O-268
50N60P3
IXFH50N60P3
IXFQ50N60P3
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sic mosfet
Abstract: Microsemi MOSFET 1200V
Text: APTMC120HRM40CT3G Phase Leg & Dual Common Emitter Power Module SiC MOSFET Q1, Q2 : VCES = 1200V ; RDSon = 40mΩ max @ Tj = 25°C Trench & Field Stop IGBT3 (Q3, Q4): VCES = 600V ; IC = 50A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies
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APTMC120HRM40CT3G
sic mosfet
Microsemi MOSFET 1200V
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Untitled
Abstract: No abstract text available
Text: APTMC120HRM40CT3G Phase Leg & Dual Common Emitter Power Module SiC MOSFET Q1, Q2 : VCES = 1200V ; RDSon = 34mΩ max @ Tj = 25°C Trench & Field Stop IGBT3 (Q3, Q4): VCES = 600V ; IC = 50A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies
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APTMC120HRM40CT3G
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transistors mj 1504
Abstract: Mosfet 600V, 20A diode schottky 600v infineon 20A 1,0V ISOTOP
Text: APT50N60JCCU2 ISOTOP Boost chopper VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 50A @ Tc = 25°C Super Junction MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch K
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APT50N60JCCU2
transistors mj 1504
Mosfet 600V, 20A
diode schottky 600v infineon
20A 1,0V ISOTOP
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Untitled
Abstract: No abstract text available
Text: APT50N60JCCU2 ISOTOP Boost chopper VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 50A @ Tc = 25°C Super Junction MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch K
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APT50N60JCCU2
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50b60pd
Abstract: 50B60PD1 50B60PD1E AUIRGP50B60 AUIRGP50B60PD1 p50b60pd1 50b60 AUIRGP50B60PD1E 200V AUTOMOTIVE MOSFET irfp250 DRIVER
Text: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET
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6306A
AUIRGP50B60PD1
AUIRGP50B60PD1E
50b60pd
50B60PD1
50B60PD1E
AUIRGP50B60
AUIRGP50B60PD1
p50b60pd1
50b60
AUIRGP50B60PD1E
200V AUTOMOTIVE MOSFET
irfp250 DRIVER
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APT0406
Abstract: APT0501 APT0502
Text: APTC60HM45SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTC60HM45SCTG
APT0406
APT0501
APT0502
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APT0406
Abstract: APT0502
Text: APTC60DHM45T1G VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Asymmetrical bridge Super Junction MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • • •
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APTC60DHM45T1G
APT0406
APT0502
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Untitled
Abstract: No abstract text available
Text: APTC60HM45SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTC60HM45SCTG
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Untitled
Abstract: No abstract text available
Text: APTC60AM83BC1G Boost chopper: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTC60AM83BC1G
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PDF
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Untitled
Abstract: No abstract text available
Text: APTC60DHM45T1G VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Asymmetrical bridge Super Junction MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • • •
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APTC60DHM45T1G
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Untitled
Abstract: No abstract text available
Text: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET
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6306A
AUIRGP50B60PD1
AUIRGP50B60PD1E
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Untitled
Abstract: No abstract text available
Text: APTC60AM83BC1G Boost chopper: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTC60AM83BC1G
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50B60PD1
Abstract: P50B60 p50b60pd1
Text: AUIRGP50B60PD1 AUIRGP50B60PD1-E AUTOMOTIVE GRADE WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET Parameters
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AUIRGP50B60PD1
AUIRGP50B60PD1-E
50B60PD1
P50B60
p50b60pd1
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PDF
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Untitled
Abstract: No abstract text available
Text: APTC60HM70SCTG VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Full – Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTC60HM70SCTG
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