Mosfet
Abstract: SSF2N60F mosfet 600V 100A
Text: SSF2N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.6ohm(typ.) ID 2A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and
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SSF2N60F
O220F
p600V
Mosfet
SSF2N60F
mosfet 600V 100A
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Mosfet
Abstract: SSF2N60D1
Text: SSF2N60D1 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.9Ω (typ.) ID 2A TO-252 Schematic Diagram Assignment Features and Benefits Marking and Pin Advanced MOSFET process technology Special designed for PWM, load switching and
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SSF2N60D1
O-252
O-252ï
Mosfet
SSF2N60D1
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L2N600
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS ON , Vgs@10V, Ids@1A = 3.8Ω We declare that the material of product compliance with RoHS requirements. 1/5 LESHAN RADIO COMPANY, LTD. L2N600 Electrical Characteristics Parameter
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L2N600
L2N600
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS ON , Vgs@10V, Ids@1A = 3.8Ω We declare that the material of product compliance with RoHS requirements. 1/5 LESHAN RADIO COMPANY, LTD. L2N60 Electrical Characteristics Parameter
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L2N60
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Untitled
Abstract: No abstract text available
Text: KSMD1N60C / KSMU1N60C 600V N-Channel MOSFET TO-251 TO-252 Features • • • • • • 1A, 600V, RDS on = 11.5Ω @VGS = 10 V Low gate charge ( typical 4.8nC) Low Crss ( typical 3.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description
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KSMD1N60C
KSMU1N60C
O-251
O-252
correc20
30TYP
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p2n60
Abstract: f2n60 pjp2n60 n60p mosfet 600v 10a to-220ab diode marking GA PJF2N60 2A600VRDS
Text: PJP2N60 / PJF2N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A , 600V, RDS ON =4.6Ω@VGS=10V, ID=1A TO-220AB ITO-220AB • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current
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PJP2N60
PJF2N60
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
p2n60
f2n60
n60p
mosfet 600v 10a to-220ab
diode marking GA
PJF2N60
2A600VRDS
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M81721
Abstract: M81721FP DGA2
Text: MITSUBISHI SEMICONDUCTORS <HVIC> M81721FP 600V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81721FP is high voltage Power MOSFET and IGBT gate driver for half bridge applications. PIN CONFIGURATION TOP VIEW 24 1 NC FEATURES ¡Floating supply voltage up to 600V
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M81721FP
M81721FP
24-Lead
24P2Q-A
SSOP24-P-300-0
M81721
DGA2
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M81721
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTORS <HVIC> M81721FP 600V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81721FP is high voltage Power MOSFET and IGBT gate driver for half bridge applications. PIN CONFIGURATION TOP VIEW 24 1 NC FEATURES ¡Floating supply voltage up to 600V
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M81721FP
M81721FP
24-Lead
24P2Q-A
SSOP24-P-300-0
M81721
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60-KW Power MOSFET 1A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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1N60-KW
1N60-KW
QW-R205-054
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fqt1n60
Abstract: FQT1N60C 1A 300V mosfet
Text: N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQT1N60C
FQT1N60C
OT-223
fqt1n60
1A 300V mosfet
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Untitled
Abstract: No abstract text available
Text: BLV1N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 8Ω Ω • Simple Drive Requirements ID 1A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
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BLV1N60
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N-Channel mosfet 600v 1a
Abstract: BLV1N60 1A 300V mosfet N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Text: BLV1N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 8Ω Ω • Simple Drive Requirements ID 1A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
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BLV1N60
N-Channel mosfet 600v 1a
BLV1N60
1A 300V mosfet
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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1A 300V mosfet
Abstract: BLV1N60 N-Channel mosfet 600v 1a
Text: BLV1N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 8Ω Ω • Simple Drive Requirements ID 1A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
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BLV1N60
1A 300V mosfet
BLV1N60
N-Channel mosfet 600v 1a
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Untitled
Abstract: No abstract text available
Text: BLV1N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 8Ω Ω • Simple Drive Requirements ID 1A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
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BLV1N60
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Mosfet
Abstract: SSF2N60
Text: SSF2N60 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.6ohm(typ.) ID 2A TO-220 Schematic Diagram Assignment Features and Benefits Marking and Pin Advanced Process Technology Special designed for PWM, load switching and general purpose applications
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SSF2N60
O-220
withstanSSF2N60
Mosfet
SSF2N60
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance
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QW-R502-053
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Untitled
Abstract: No abstract text available
Text: SDU/D01N60A Green Product S a mHop Microelectronics C orp. Preliminary 600V N-Channel Planar MOSFET FEATURES PRODUCT SUMMARY V DSS 600V Low Crss typical 2pF . R DS(ON) (m Ω) Max ID 1.1A Fast Switching. 100% Avalanche Rated. 9.3 @ VGS=10V,ID=0.55A G G D
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SDU/D01N60A
O-252
O-252
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power mosfet 600v
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60P Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged
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1N60P
1N60P
QW-R502-634
power mosfet 600v
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N60L Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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2N60L
2N60L
QW-R502-472
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utc 2n60l
Abstract: UTC2N60L mosfet D 472
Text: UNISONIC TECHNOLOGIES CO., LTD 2N60L Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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2N60L
2N60L
QW-R502-472
utc 2n60l
UTC2N60L
mosfet D 472
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche
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1N60Z
1N60Z
QW-R502-724
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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QW-R502-053
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche
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1N60Z
1N60Z
QW-R502-724
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N60L Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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2N60L
2N60L
QW-R502-472
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